Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Endurance | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71421LA25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2005 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | YES | SRAMs | 5V | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | 0.17mA | 0.0015A | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24T128-WZ | ROHM Semiconductor | 1.7896 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 1 (Unlimited) | 8 | 9.27mm | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 5.33mm | 1 | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | NO | 2.54mm | R-PDIP-T8 | 1.6V | 5.5V | 128Kb 16K x 8 | Non-Volatile | 1.6V~5.5V | 16KX8 | 8 | 131072 bit | SERIAL | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W632GG6NB11I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 96-VFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 933MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C2565KV18-450BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | 1.1A | BOTTOM | 1.8V | CY7C2565 | 165 | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 1 ms | 72Mb 2M x 36 | Volatile | 19b | 1.7V~1.9V | 36 | Synchronous | 450MHz | 0.34A | 36b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71256SA20YGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 5V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 5.5V | 4.5V | 256 kb | 7.6mm | 2.67mm | CMOS | 3.556mm | 1 | 145mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 28 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 20 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | 32KX8 | Asynchronous | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT47H128M4SH-25E:H TR") |
MT47H128M4SH-25E:H TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 60-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 400ps | 512Mb 128M x 4 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V256S12YG | Renesas Electronics America Inc. | 1.1410 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V256 | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70825S35PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SARAM | IDT70825 | 80-TQFP (14x14) | 35ns | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | RAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V06L25PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V06 | 64-TQFP (14x14) | 25ns | 128Kb 16K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT52L256M64D2FT-107 WT:B | Micron Technology Inc. | 28.5147 |
Min: 1 Mult: 1 |
0.00000000 | Box | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67603S133BGGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 9 Mb | 133MHz | 2.15mm | 22mm | 2.15mm | CMOS | 280mA | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | INDUSTRIAL | YES | SRAMs | 3-STATE | 4.2 ns | 133MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | 0.07A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416S15YI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 85°C | -40°C | 28.575mm | Non-RoHS Compliant | 44 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 44 | INDUSTRIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.17mA | 256KX16 | 16 | 4194304 bit | 0.02A | 15 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F64G08CBAABWP-12Z:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46H64M32LFMA-6 IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2011 | Obsolete | 3 (168 Hours) | 168 | EAR99 | 1 | 12mm | ROHS3 Compliant | AUTO/SELF REFRESH | 168-WFBGA | 12mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 0.7mm | 8542.32.00.36 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT46H64M32 | 168 | YES | 0.5mm | S-PBGA-B168 | 1.7V | Not Qualified | 1.8V | 1.95V | 3-STATE | 5ns | 2Gb 64M x 32 | Volatile | 0.14mA | 1.7V~1.95V | 64MX32 | 32 | 2147483648 bit | 166MHz | 0.01A | COMMON | 8192 | DRAM | Parallel | 15ns | 24816 | 24816 | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MT28F800B3WP-9 B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2002 | Obsolete | 2 (1 Year) | 48 | EAR99 | 18.4mm | ROHS3 Compliant | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 3.3V | 30 | MT28F800B3 | 48 | YES | 0.5mm | R-PDSO-G48 | 3V | Not Qualified | 3.3V | 3.6V | 8Mb 1M x 8 512K x 16 | Non-Volatile | 0.025mA | 3V~3.6V | 512KX16 | 16 | 8388608 bit | 0.000005A | 90 ns | 8 | 100000 Write/Erase Cycles | 3V | NO | NO | YES | 1217 | FLASH | Parallel | 90ns | 16K8K96K128K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||
|
LE25S161PCTXG | ON Semiconductor | 2.1480 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | Tape & Reel (TR) | 2009 | yes | Active | 2 (1 Year) | 8 | 4mm | ROHS3 Compliant | 8-UDFN Exposed Pad | 3mm | Surface Mount | -40°C~90°C TA | CMOS | SYNCHRONOUS | 0.6mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-N8 | 1.65V | 1.95V | 16Mb 2M x 8 | Non-Volatile | 1.65V~1.95V | 2MX8 | 8 | 16777216 bit | SERIAL | 70MHz | 1.8V | FLASH | SPI | 700μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
99326-E0496-B | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70T631S12DDI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 144-LQFP Exposed Pad | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70T631 | 144-TQFP (20x20) | 12ns | 4.5Mb 256K x 18 | Volatile | 2.4V~2.6V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F4G08ABADAH4-ITX:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 3 Weeks | Tray | 2013 | Last Time Buy | 3 (168 Hours) | 63 | 3.3V | ROHS3 Compliant | 63 | 63-VFBGA | unknown | 1 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | MT29F4G08 | YES | 0.8mm | Not Qualified | 4Gb 512M x 8 | Non-Volatile | 0.035mA | 2.7V~3.6V | 512MX8 | 8 | 0.0001A | 25 ns | 8b | NO | NO | YES | 4K | 2Kwords | YES | FLASH | Parallel | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1WV6416RSD-5SI#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Cut Tape (CT) | yes | Discontinued | 1 (Unlimited) | 52 | 3V | 1 | ROHS3 Compliant | 52 | 52-TFSOP (0.350, 8.89mm Width) | 64 Mb | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | DUAL | 52 | YES | 0.4mm | Not Qualified | 3-STATE | 64Mb 8M x 8 4M x 16 | Volatile | 0.06mA | 2.7V~3.6V | 16 | 0.000024A | 55 ns | 8 | COMMON | 2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT29C512-20JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | FLASH | AT29C512 | 32-PLCC (13.97x11.43) | 200ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M64D4LM-18 WT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2016 | Obsolete | 3 (168 Hours) | 216 | 1 | 12mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 216-VFBGA | 12mm | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | MT42L256M64 | YES | 0.4mm | S-PBGA-B216 | 1.7V | 1.95V | 16Gb 256M x 64 | Volatile | 1.14V~1.3V | 256MX64 | 64 | 17179869184 bit | 533MHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V261L25PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2001 | no | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 3.6V | 3V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.5mm | SRAMs | 3-STATE | 25 ns | 32kB | RAM, SDR, SRAM | 28b | 0.185mA | 16KX16 | 0.003A | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL128SDSNFI000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | FL-S | yes | Active | 3 (168 Hours) | 8 | 8mm | ROHS3 Compliant | ALSO CONFIGURABLE AS 128M X 1 | 8-WDFN Exposed Pad | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 32MX4 | 4 | 134217728 bit | SERIAL | 80MHz | 2 | 500ms | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116LA35TPGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 24 | EAR99 | 85°C | -40°C | 31.75mm | RoHS Compliant | DIP | Parallel | 7.62mm | CMOS | 4.191mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | THROUGH-HOLE | 260 | 5V | 30 | 24 | INDUSTRIAL | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.095mA | 2KX8 | 8 | 16384 bit | 0.00002A | 35 ns | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LP0408DSB-5SI#B1 | Renesas Electronics America | 12.2863 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tray | 2012 | yes | Active | 3 (168 Hours) | 32 | 3A991.B.2.A | ROHS3 Compliant | 32-SOIC (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 32 | YES | R-PDSO-G32 | 4.5V | 5.5V | 4Mb 512K x 8 | Volatile | 4.5V~5.5V | 512KX8 | 8 | 4194304 bit | 55 ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M64D4RQ-053 WT ES:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 556-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71016S12Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2010 | no | 3 (168 Hours) | 44 | SMD/SMT | 3A991.B.2.B | 70°C | 0°C | 1 | 28.575mm | RoHS Compliant | 44 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 44 | COMMERCIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | 20 ns | 128kB | RAM, SRAM, SRAM - Asynchronous | 0.21mA | 64KX16 | 16 | 1048576 bit | 0.01A | YES | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
W25Q64FWBYIG TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | 2016 | SpiFlash® | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | 16-UFBGA, WLCSP | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64Mb 8M x 8 | Non-Volatile | 1.65V~1.95V | 104MHz | FLASH | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71321SA55TF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 10mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | LQFP | Parallel | 5.5V | 4.5V | 16 kb | 10mm | 1.4mm | CMOS | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.015A | 8b | COMMON |
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71421LA25J8 Integrated Device Technology (IDT)
5V V 52 Pin Memory IC 16 kb kb 19mm mm
Price: 0.0000
RFQ -
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CY7C2565KV18-450BZI Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C2565 72 Mb kb 15mm mm 1.1A mA 36b b
Price: 0.0000
RFQ -
71256SA20YGI Integrated Device Technology (IDT)
5V V Surface Mount 28 Pin Memory IC 256 kb kb 17.9mm mm 145mA mA 8b b
Price: 0.0000
RFQ -
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71V67603S133BGGI Integrated Device Technology (IDT)
119 Pin Memory IC 9 Mb kb 14mm mm
Price: 0.0000
RFQ -
IDT71V416S15YI Integrated Device Technology (IDT)
3.3V V 44 Pin Memory IC 28.575mm mm
Price: 0.0000
RFQ -
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