Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Max Power Dissipation | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AT49BV320DT-70TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV320 | 70ns | 32Mb 2M x 16 | Non-Volatile | 2.65V~3.6V | FLASH | Parallel | 120μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S80PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | QUAD | GULL WING | 240 | 2.5V | 30 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.27mA | 512KX36 | 36 | 18874368 bit | 95MHz | 0.06A | 8 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53E768M32D4DT-046 AIT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 200-VFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 24Gb 768M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MTFC8GACAENS-AAT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | e•MMC™ | Active | 3 (168 Hours) | ROHS3 Compliant | 153-TFBGA | Surface Mount | -40°C~105°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "CG7779AAT") |
CG7779AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Vendor Undefined | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7519S166BF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 9 Mb | 166MHz | 1.4mm | 15mm | 1.4mm | CMOS | 790mA | 1 | 790mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 20 ns | 1.1MB | RAM, SDR, SRAM | 18b | Synchronous | 0.015A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424YS10PH8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 70°C | 0°C | Non-RoHS Compliant | TSOP | Parallel | RAM, SRAM - Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16128C-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 84-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | 450ps | 2Gb 128M x 16 | Volatile | 1.7V~1.9V | 333MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C66-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Through Hole | Tube | 2000 | no | Active | Not Applicable | 8 | 5V | ROHS3 Compliant | Lead Free | Tin | No | 8 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-DIP (0.300, 7.62mm) | 2-Wire, Serial | 4 kb | Through Hole | -40°C~125°C TA | CMOS | 1 | 4mA | e0 | DUAL | 5V | 93C66 | 8 | 2.54mm | 5V | 3-STATE | 6 ms | 4Kb 512 x 8 256 x 16 | Non-Volatile | 4.5V~5.5V | 8 | 2MHz | 0.0001A | 16 | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 1ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
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U6264BS2C07LLG1TR | Alliance Memory, Inc. | 0.8679 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2011 | yes | Discontinued | 3 (168 Hours) | 28 | ROHS3 Compliant | 28 | 28-SOIC (0.330, 8.38mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 4.5V | 5.5V | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 70 ns | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY2545C033 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MR25H10CDF | Everspin Technologies Inc. | 6.2668 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tray | 2013 | Active | 3 (168 Hours) | 8 | EAR99 | 6mm | ROHS3 Compliant | Lead Free | No | 8 | 8-VDFN Exposed Pad | SPI, Serial | 1 Mb | Surface Mount | -40°C~85°C TA | MRAM (Magnetoresistive RAM) | 0.9mm | 1 | 27mA | DUAL | 3V | 8 | 1.27mm | 2.7V | 3/3.3V | 3.6V | 600mW | 10 ns | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | 8 | 8b | 40MHz | 0.000115A | 8b | RAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV002AN-70TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV002 | 70ns | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT49H32M9FM-33:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2002 | Active | 3 (168 Hours) | ROHS3 Compliant | 144-TFBGA | Surface Mount | 0°C~95°C TC | 20ns | 288Mb 32M x 9 | Volatile | 1.7V~1.9V | 300MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C513B-12TCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 1993 | yes | Active | 3 (168 Hours) | 44 | 5V | 18.415mm | ROHS3 Compliant | Lead Free | 44-TSOP (0.400, 10.16mm Width) | 512 kb | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.2mm | 1 | 83MHz | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 44 | YES | 0.8mm | R-PDSO-G44 | 512Kb 32K x 16 | Volatile | 4.5V~5.5V | 32KX16 | 16 | 12 ns | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C128M16D3LA-12BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 96-VFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CP5884AF | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7142SA100P | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7142 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT28C010-20TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT28C010 | 200ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RM25C512C-LMAI-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2013 | Mavriq™ | yes | Not For New Designs | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | SPI, Serial | 2mm | Surface Mount | -40°C~85°C TA | CBRAM | SYNCHRONOUS | 0.6mm | 1 | DUAL | 3.3V | YES | 0.5mm | R-PDSO-N8 | 1.65V | 3.6V | 512kb 128B Page Size | Non-Volatile | 1.65V~3.6V | 512KX1 | 1 | 524288 bit | 20MHz | SPI | CBRAM® | SPI | 100μs, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70V7319S166DDI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 4 (72 Hours) | 144 | 3A991.B.2.A | 85°C | -40°C | 2 | 20mm | Non-RoHS Compliant | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | not_compliant | 166MHz | 20mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 20 | 144 | INDUSTRIAL | YES | 0.5mm | S-PQFP-G144 | 3.15V | SRAMs | Not Qualified | 2.5/3.33.3V | 3.45V | 3-STATE | RAM, SRAM | 0.83mA | 256KX18 | 18 | 4718592 bit | 0.04A | 12 ns | COMMON | 3.15V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48H16M32L2B5-10 IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2003 | yes | Discontinued | 2 (1 Year) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-VFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1.4mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT48H16M32 | 90 | YES | 0.8mm | R-PBGA-B90 | 1.7V | Not Qualified | 1.9V | 7.5ns | 512Mb 16M x 32 | Volatile | 1.7V~1.9V | 16MX32 | 32 | 536870912 bit | 100MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53E256M16D1DS-046 AIT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA100BQI | Renesas Electronics America Inc. | 23.5332 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3556 | 165-CABGA (13x15) | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W631GU6KB12I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2016 | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | 96 | YES | 0.8mm | R-PBGA-B96 | 1.283V | Not Qualified | 1.35V | 1.45V | 3-STATE | 20ns | 1Gb 64M x 16 | Volatile | 0.4mA | 1.283V~1.45V | 64MX16 | 16 | 1073741824 bit | 800MHz | 0.014A | COMMON | 8192 | DRAM | Parallel | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NYG1S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | Active | 67 | 85°C | -40°C | 1.8V | 8mm | RoHS Compliant | No | 67 | Parallel | 2 Gb | 6.5mm | CMOS | 1mm | 1 | BOTTOM | BALL | 1.8V | 67 | INDUSTRIAL | YES | 0.8mm | 1.7V | 1.95V | EEPROM, NAND | 256MX8 | 8 | 2kB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT25TL512BBA8ESF-0AAT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 536870912 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116LA35SO | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Rail/Tube | 2008 | 1 (Unlimited) | 24 | EAR99 | 70°C | 0°C | 5V | 1 | Non-RoHS Compliant | 24 | SOIC | Parallel | 5.5V | not_compliant | 4.5V | 16 kb | CMOS | 2.65mm | 1 | 95mA | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 225 | 5V | 30 | 24 | COMMERCIAL | SRAMs | Not Qualified | 5V | 3-STATE | 35 ns | RAM, SRAM - Asynchronous | 11b | 2KX8 | 8 | Asynchronous | 0.00002A | 8b | YES | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F1G16ABBDAHC-IT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Tape & Reel (TR) | 2013 | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | 63-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | MT29F1G16 | 1Gb 64M x 16 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C3256A-12TCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2001 | Active | 3 (168 Hours) | 70°C | 0°C | 3.3V | 1 | ROHS3 Compliant | No | 28 | 28-TSSOP (0.465, 11.80mm Width) | Parallel | 3.6V | 3V | 256 kb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 83MHz | 28-TSOP I | 12ns | 256Kb 32K x 8 | Volatile | 15b | 3V~3.6V | SRAM | Parallel | 12ns |
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IDT71T75702S80PFGI Integrated Device Technology (IDT)
2.5V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
MT53E768M32D4DT-046 AIT:E Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
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70V7519S166BF8 Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 9 Mb kb 15mm mm 790mA mA 36b b
Price: 0.0000
RFQ -
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93C66-E/P Microchip Technology
5V V Through Hole 8 Pin Memory IC 93C66 4 kb kb 4mA mA
Price: 0.0000
RFQ -
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MR25H10CDF Everspin Technologies Inc.
3/3.3V V Surface Mount 8 Pin Memory IC 1 Mb kb 6mm mm 27mA mA 8b b
Price: 6.2668
RFQ -
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IDT70V7319S166DDI Integrated Device Technology (IDT)
2.5/3.33.3V V 144 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
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MT25TL512BBA8ESF-0AAT Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 10.3mm mm
Price: 0.0000
RFQ -
IDT6116LA35SO Integrated Device Technology (IDT)
5V V Surface Mount 24 Pin Memory IC 16 kb kb 95mA mA 8b b
Price: 0.0000
RFQ -
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