Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS4C256M8D3-15BCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2014 | Obsolete | 3 (168 Hours) | 90°C | 0°C | RoHS Compliant | 78-TFBGA | Parallel | 800MHz | Surface Mount | 0°C~90°C TC | SDRAM - DDR3 | 78-FBGA (8x10.5) | 20ns | 2Gb 256M x 8 | Volatile | 1.425V~1.575V | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AS4C256M8D3LB-12BCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 78 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-VFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | R-PBGA-B78 | 1.283V | 1.45V | 20ns | 2Gb 256M x 8 | Volatile | 1.283V~1.45V | 256MX8 | 8 | 2147483648 bit | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "71V016SA15BFI") |
71V016SA15BFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2007 | no | Active | 3 (168 Hours) | 48 | 85°C | -40°C | 3.3V | 1 | 7mm | RoHS Compliant | Contains Lead | No | 48 | Parallel | 3.6V | 3.15V | 1 Mb | 7mm | 1.4mm | CMOS | 1 | 130mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321S55PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71V321 | 64-TQFP (14x14) | 55ns | 16Kb 2K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C2M32SA-6TIN | Alliance Memory, Inc. | 4.0142 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2013 | yes | Active | 3 (168 Hours) | 86 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | Lead Free | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G86 | 3V | 3.6V | 5.5ns | 64Mb 2M x 32 | Volatile | 3V~3.6V | 2MX32 | 32 | 67108864 bit | 166MHz | DRAM | Parallel | 2ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C8M16S-6TCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2012 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | Lead Free | No | 54 | CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH | 54-TSOP (0.400, 10.16mm Width) | 128 Mb | Surface Mount | 0°C~70°C TA | SDRAM | 1.2mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 3.3V | 40 | 54 | YES | 0.8mm | 3V | 3.6V | 3-STATE | 5ns | 128Mb 8M x 16 | Volatile | 12b | 0.14mA | 3V~3.6V | 8MX16 | 16 | 16b | 166MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 2ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT7164S35TPG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | 28-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | SRAM - Asynchronous | IDT7164 | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3576S133PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 133MHz | 14mm | 1.4mm | CMOS | 1 | 250mA | e3 | Matte Tin (Sn) - annealed | QUAD | FLAT | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 4.2 ns | 133MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.03A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M93S46-WMN6 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | 750μA | e0 | DUAL | 5V | M93S46 | 8 | YES | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 3-STATE | 2 μs | 1Kb 64 x 16 | Non-Volatile | 2.5V~5.5V | 64X16 | 16 | 1024 bit | 2MHz | 0.000005A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7025L70GB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2012 | no | Active | 1 (Unlimited) | 84 | 125°C | -55°C | 5V | 2 | 27.94mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | Parallel | 128 kb | 27.94mm | 3.68mm | CMOS | 1 | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 5V | 84 | MILITARY | NO | 3-STATE | MIL-PRF-38535 | RAM, SRAM | 26b | 8KX16 | 0.004A | 70 ns | YES | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709089L9PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 40MHz | 1.4mm | 14mm | 1.4mm | 657.000198mg | CMOS | 350mA | 1 | 350mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 9 ns | 64kB | RAM, SDR, SRAM | 32b | 64KX8 | Synchronous | 0.005A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C64M16D3-12BAN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2014 | Automotive, AEC-Q100 | yes | Discontinued | 3 (168 Hours) | 96 | EAR99 | 1.5V | 1 | 13mm | ROHS3 Compliant | 96 | AUTO/SELF REFRESH | 96-FBGA | 1 Gb | Surface Mount | -40°C~105°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | 1.425V | 1.575V | 20ns | 1Gb 64M x 16 | Volatile | 13b | 1.425V~1.575V | 64MX16 | 16 | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709379L9PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2001 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 576 kb | 40MHz | 14mm | 1.4mm | 400mA | 9 ns | 72kB | RAM, SDR, SRAM | 30b | Synchronous | 18b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9199L7PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1.1 Mb | 45.45MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 18 ns | 128kB | RAM, SDR, SRAM | 34b | Synchronous | 9b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W256GL7AZS6E | Micron Technology Inc. | 3.3813 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | 2015 | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 256 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 10mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W256 | 64 | YES | 1mm | 3/3.3V | 2.7V | AEC-Q100 | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | 16MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | 0.00007ms | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 70ns | 128K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424S12YI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 36 | 3A991.B.2.A | 85°C | -40°C | 23.495mm | Non-RoHS Compliant | 36 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 36 | INDUSTRIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.17mA | 512KX8 | 8 | 4194304 bit | 0.02A | 12 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116SA25SO8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 1 (Unlimited) | 24 | EAR99 | 70°C | 0°C | 1 | 15.4mm | Non-RoHS Compliant | SOIC | Parallel | not_compliant | 7.5mm | CMOS | 2.65mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 225 | 5V | 30 | 24 | COMMERCIAL | YES | 1.27mm | R-PDSO-G24 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.12mA | 2KX8 | 8 | 16384 bit | 0.002A | 25 ns | YES | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F008B3VG-9 T TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2002 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 40-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NOR | MT28F008B3 | 8Mb 1M x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4010YMA-85 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 37.72mm | ROHS3 Compliant | Contains Lead | Tin | No | 28 | 28-DIP Module (0.61, 15.49mm) | 64 kb | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 8542.32.00.41 | 1 | 50mA | DUAL | 5V | BQ4010 | 2.54mm | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.004A | 85 ns | 8b | NVSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024L17J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 260mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 17 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025S25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 265mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BRCB016GWL-3E2 | ROHM Semiconductor | 2.7309 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Cut Tape (CT) | 2013 | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | 5 | 5-UFBGA, CSPBGA | 2-Wire, I2C, Serial | 16 kb | 1.1mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | 0.4mm | 1.7V | Not Qualified | 1.8/3.3V | 3.6V | 16Kb 2K x 8 | Non-Volatile | 0.002mA | 1.7V~3.6V | 2KX8 | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | I2C | 1010MMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42VM32160D-75BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90 | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 6ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 32b | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V38L20PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V38 | 100-TQFP | 20ns | 1.125Mb 64K x 18 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT28FW512ABA1HPC-0AAT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Bulk | Automotive, AEC-Q100 | Active | 64 | 13mm | RoHS Compliant | 64-LBGA | 11mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B64 | 2.7V | 3.6V | 105ns | 512Mb 32M x 16 | Non-Volatile | 1.7V~3.6V | 32MX16 | 16 | 536870912 bit | 3V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC46A-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | Through Hole | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | No | 8 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 8-DIP (0.300, 7.62mm) | I2C, Serial | No SVHC | 1 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | Matte Tin (Sn) | DUAL | 3V | 93LC46A | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 250 ns | 1Kb 128 x 8 | Non-Volatile | 2.5V~5.5V | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT25QL02GCBA8E12-0SIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2013 | Obsolete | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | Copper, Silver, Tin | 24 | MEMORY WIDTH CAN ALSO ORGANISED AS X1 | 24-TBGA | SPI, Serial | 2 Gb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | 1mm | Not Qualified | 3/3.3V | 2.7V | 6 ns | 2Gb 256M x 8 | Non-Volatile | 0.06mA | 2.7V~3.6V | 512MX4 | 4 | 133MHz | 0.00005A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | SPI | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3577S75BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 165-CABGA (13x15) | 7.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 117MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C128M16D3LA-12BCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 96 | 1 | 13mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 96-VFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2502P-E48+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 3.94mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | 6-LSOJ (0.148, 3.76mm Width) | Serial | Unknown | 1.5mm | Surface Mount | -40°C~85°C TA | EPROM - OTP | 5μA | 8542.32.00.71 | 1 | e3 | DUAL | 260 | 30 | DS2502 | 6 | 1.27mm | 2.8V | Other Memory ICs | 3/5V | 6V | 1Kb 128 x 8 | Non-Volatile | 0.000005mA | 2.8V~6V | 1KX1 | 1 | 1024 bit | 0.000005A | COMMON | EPROM | 1-Wire® |
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