Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "MT29F32G08ABEABM73A3WC1") |
MT29F32G08ABEABM73A3WC1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2016 | Obsolete | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | Parallel | 32 Gb | 0°C~70°C TA | 3.3V | FLASH - NAND | 3.3V | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27BV010-90TC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27BV010 | 90ns | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16640A-15GBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | 1.5V | ROHS3 Compliant | 96 | 96-TFBGA | 1 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 290mA | 190mA | 20ns | 1Gb 64M x 16 | Volatile | 16b | 1.425V~1.575V | 16b | 667MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C31026B-20TCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 1996 | yes | Active | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.2mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 3.3V | 40 | 44 | YES | 0.8mm | R-PDSO-G44 | 3V | 3.6V | 1Mb 64K x 16 | Volatile | 3V~3.6V | 64KX16 | 16 | 1048576 bit | 20 ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39VF802C-70-4C-MAQE | Microchip Technology | 12.1565 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tray | 2011 | SST39 MPF™ | Active | 3 (168 Hours) | 48 | 3A991.B.1.A | 3.3V | 6mm | ROHS3 Compliant | Lead Free | No | 48 | TOP BOOT BLOCK | 48-WFBGA | No SVHC | 8 Mb | 5MHz | 530μm | 4mm | Surface Mount | 0°C~70°C TA | CMOS | 8542.32.00.51 | 1 | 18mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 40 | SST39VF802C | 48 | 0.5mm | 2.7V | 3.6V | 70ns | 8Mb 512K x 16 | Non-Volatile | 19b | 2.7V~3.6V | 512KX16 | Asynchronous | 16b | 0.00002A | 16b | 2.7V | YES | YES | YES | 256 | YES | YES | FLASH | Parallel | 10μs | 2K | TOP | |||||||||||||||||||||||||||||||||||||||||||||
|
MT53D512M64D4BP-046 WT:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q32FVZEJQ TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | SpiFlash® | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~105°C TA | FLASH - NOR | 32Mb 4M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O, QPI | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W29N04GWBIBA | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | 2016 | yes | Active | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | 63 | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | 1.7V | 1.95V | 4Gb 512M x 8 | Non-Volatile | 1.7V~1.95V | 256MX16 | 16 | 4294967296 bit | 1.8V | FLASH | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25128T1-10TC-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 14-TSSOP (0.173, 4.40mm Width) | Surface Mount | 0°C~70°C TA | AT25128 | 128Kb 16K x 8 | Non-Volatile | 2.7V~5.5V | 3MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DL081-MHN-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | Active | 1 (Unlimited) | 8 | 1.8V | 6mm | ROHS3 Compliant | Gold | 8 | 8-UDFN Exposed Pad | SPI, Serial | 8 Mb | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 0.6mm | 1 | e4 | DUAL | 260 | 1.8V | NOT SPECIFIED | 8 | 1.27mm | 1.65V | Not Qualified | 1.95V | 5 ns | 8Mb 256Bytes x 4096 pages | Non-Volatile | 20b | 0.022mA | 1.65V~1.95V | 1 | 8b | 100MHz | 0.000014A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | SPI | FLASH | SPI | 8μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24CM01-SSHM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 3 (168 Hours) | 8 | 4.925mm | ROHS3 Compliant | Lead Free | Gold | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C | 1 Mb | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 3mA | e4 | DUAL | 260 | 5V | 40 | AT24CM01 | 1.27mm | 1.7V | Not Qualified | 5.5V | 85°C | 550ns | 1Mb 128K x 8 | Non-Volatile | 1.7V~5.5V | 8 | SERIAL | 1MHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62147EV30LL-45ZSXA | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | MoBL® | Obsolete | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | unknown | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 1 | NOT SPECIFIED | DUAL | 3V | 44 | YES | 0.8mm | R-PDSO-G44 | 2.2V | COMMERCIAL | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D4DASB-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA256UIDT-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 3 Weeks | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | e3 | DUAL | 260 | 2.5V | 40 | 24AA256UID | YES | 1.27mm | 1.7V | Not Qualified | 5.5V | 900ns | TS 16949 | 256Kb 32K x 8 | Non-Volatile | 0.003mA | 1.7V~5.5V | 8 | 262144 bit | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1225AD-85 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 3 (168 Hours) | 28 | 38.865mm | Non-RoHS Compliant | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | 15.24mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.54mm | 1 | e0 | TIN LEAD | DUAL | 245 | 5V | NOT SPECIFIED | 28 | NO | 2.54mm | R-PDMA-P28 | 4.5V | COMMERCIAL | 5.5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 85 ns | NVSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC64FT-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Gold | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 64 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | 40 | 24LC64F | 8 | 0.65mm | Not Qualified | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V32M8TG-75 IT:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM - DDR | MT46V32M8 | 66-TSOP | 750ps | 256Mb 32M x 8 | Volatile | 2.3V~2.7V | 133MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EDB4416BBBH-1DIT-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 134 | EAR99 | 1 | 11.5mm | ROHS3 Compliant | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | 134-WFBGA | 10mm | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.75mm | 1 | BOTTOM | 1.2V | YES | 0.65mm | R-PBGA-B134 | 1.14V | 1.3V | 4Gb 256M x 16 | Volatile | 1.14V~1.95V | 256MX16 | 16 | 4294967296 bit | 533MHz | SINGLE BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7143SA90J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 24mm | 3.63mm | 280mA | 68 | 90 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G76F-3BGTE2 | ROHM Semiconductor | 0.8662 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | 8Kb 512 x 16 | Non-Volatile | 1.7V~5.5V | 3MHz | 3-WIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA45J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 45 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LQ80CSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58BYG1S3HBAI4 | Kioxia America, Inc. | 3.6632 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Benand™ | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 1.8V | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 2Gb 256M x 8 | Non-Volatile | 1.7V~1.95V | 256MX8 | 8 | 2147483648 bit | PARALLEL | 1.8V | FLASH | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1220AB-100+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 33.02mm | ROHS3 Compliant | Lead Free | 24 | 24-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.668mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1220A | 24 | NO | 2.54mm | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 16Kb 2K x 8 | Non-Volatile | 0.075mA | 4.75V~5.25V | 2KX8 | 8 | 16384 bit | 0.01A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S100BGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 119-PBGA (14x22) | 5ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
6116LA20SOGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 85°C | -40°C | 5V | 1 | 15.4mm | RoHS Compliant | Lead Free | No | 24 | SOIC | Parallel | 5.5V | 4.5V | 16 kb | 7.6mm | 2.34mm | CMOS | 1 | 95mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 5V | 30 | 24 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 20 ns | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 0.00003A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70125L25JG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70125 | 52-PLCC (19.13x19.13) | 25ns | 18Kb 2K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24A02FJ-WME2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 3.9mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1.775mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 8 | SERIAL | 400kHz | 0.000002A | 40 | 100000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14E256LA-SZ45XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2009 | yes | Active | 3 (168 Hours) | 32 | EAR99 | 5V | 20.726mm | ROHS3 Compliant | Lead Free | Gold, Tin | No | 32 | 32-SOIC (0.295, 7.50mm Width) | No SVHC | 256 kb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 2.54mm | 1 | 52mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 30 | CY14*256 | 32 | 1.27mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 8b | 0.005A | 45 ns | 8b | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43TR82560C-15HBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 78 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 78-TFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.5V | 10 | YES | 0.8mm | R-PBGA-B78 | 1.425V | 1.575V | 20ns | 2Gb 256M x 8 | Volatile | 1.425V~1.575V | 256MX8 | 8 | 2147483648 bit | 667MHz | DRAM | Parallel | 15ns |
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