Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Load Capacitance | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS65WV25616DBLL-55CTLA3-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 44-TSOP II | 55ns | 4Mb 256K x 16 | Volatile | 2.3V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25V8035FM1Q | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | MXSMIO™ | Active | 3 (168 Hours) | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~125°C | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI | 100μs, 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "6116LA45TDB") |
6116LA45TDB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 24-CDIP (0.300, 7.62mm) | Through Hole | -55°C~125°C TA | SRAM - Asynchronous | IDT6116 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71V30L25TFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 8Kb 1K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V432S5PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2013 | yes | Discontinued | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.63V | 3.135V | 1 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 128kB | RAM, SDR, SRAM | 15b | 32KX32 | Synchronous | 32b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230AB-100+ | Maxim Integrated | 23.5740 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2002 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 5V | 39.12mm | ROHS3 Compliant | Lead Free | Tin | No | 28 | 28-DIP Module (0.600, 15.24mm) | Unknown | 256 kb | 100GHz | 9.4mm | 18.8mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 85mA | 8473.30.11.40 | 1 | e3 | DUAL | 5V | DS1230AB | 28 | 2.54mm | SRAMs | 5V | 5pF | 256Kb 32K x 8 | Non-Volatile | 4.75V~5.25V | 32KX8 | 8b | 0.0006A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62157DV30L-55BVXET | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | MoBL® | Obsolete | 3 (168 Hours) | 125°C | -40°C | ROHS3 Compliant | 48 | 48-VFBGA | Parallel | 3.6V | 2.2V | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | CY62157 | 48-VFBGA (6x8) | 55ns | 8Mb 512K x 16 | Volatile | 2.2V~3.6V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
N02L6181AB27I | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2008 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | RoHS Compliant | 48-LFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.34mm | 8542.32.00.41 | 1 | BOTTOM | 1.8V | N02L6181A | 48 | YES | 0.75mm | R-PBGA-B48 | 1.65V | Not Qualified | 1.8/2V | 2.2V | 3-STATE | 2Mb 128K x 16 | Volatile | 0.017mA | 1.65V~2.2V | 128KX16 | 16 | 2097152 bit | 0.000005A | 70 ns | COMMON | 1.2V | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S166PFG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 100-TQFP (14x14) | 3.5ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42VM32100D-6BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 1.7V | 1.95V | 5.5ns | 32Mb 1M x 32 | Volatile | 1.7V~1.95V | 1MX32 | 32 | 33554432 bit | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2045W-100# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Obsolete | 5 (48 Hours) | 256 | EAR99 | 3.3V | 27mm | ROHS3 Compliant | Lead Free | No | 256 | 256-BGA | 1 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 8.72mm | 8542.32.00.41 | 1 | BOTTOM | 3.3V | DS2045 | 256 | YES | 1.27mm | 3V | SRAMs | 3.6V | 1Mb 128K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 128KX8 | 8 | 8b | 0.005A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA46-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | 8 | 1000K ERASE/WRITE CYCLE; 200 YEAR DATA RETENTION | 8-SOIC (0.154, 3.90mm Width) | Serial | 1 kb | 1.25mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 3mA | e3 | DUAL | 260 | 3V | 40 | 93AA46 | 8 | YES | 1.27mm | Not Qualified | 5.5V | 2 μs | 1Kb 128 x 8 64 x 16 | Non-Volatile | 1.8V~5.5V | 64X16 | 2MHz | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025S55PF | Renesas Electronics America Inc. | 27.0094 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7025 | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4010MA-85 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 37.72mm | ROHS3 Compliant | Contains Lead | Tin | No | 28 | 28-DIP Module (0.61, 15.49mm) | 64 kb | 85GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 8542.32.00.41 | 1 | 50mA | DUAL | 5V | BQ4010 | 2.54mm | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 4.75V~5.5V | 8KX8 | 8 | 8b | 0.004A | 85 ns | 8b | NVSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG8220AA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Vendor Undefined | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M16S-6BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2014 | Obsolete | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 8mm | RoHS Compliant | Lead Free | 54 | AUTO/SELF REFRESH | 54-TFBGA | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 100mA | 1.2mm | 1 | BOTTOM | 3.3V | YES | 0.8mm | 3V | 3.6V | 5.4ns | 256Mb 16M x 16 | Volatile | 13b | 3V~3.6V | 16MX16 | 16 | 16b | 166MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7008L15J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2010 | no | Active | 1 (Unlimited) | 84 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 5.5V | 4.5V | 512 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | YES | SRAMs | 5V | 3-STATE | 15 ns | 64kB | RAM, SDR, SRAM | 32b | 64KX8 | 0.005A | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
S99PL032J0029 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC08BHT-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 8 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC08BH | 8 | 0.65mm | Not Qualified | 900ns | 8Kb 256 x 8 x 4 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||
 |
LE25U40CMCQ00-AH | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 2.5V | ROHS3 Compliant | No | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 4 Mb | Surface Mount | -40°C~85°C TA | 4Mb 512K x 8 | Non-Volatile | 19b | 2.3V~3.6V | 8b | 40MHz | 256B | FLASH | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709349L7PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 5.5V | 4.5V | 72 kb | 45.45MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 400mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 7.5 ns | 9kB | RAM, SDR, SRAM | 12b | 4KX18 | Synchronous | 0.003A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||
 |
AS4C32M16D3-12BCN | Alliance Memory, Inc. | 4.3830 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2017 | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-VFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.425V | 1.575V | 20ns | 512Mb 32M x 16 | Volatile | 1.425V~1.575V | 32MX16 | 16 | 536870912 bit | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7132LA35PDG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2010 | yes | Active | 1 (Unlimited) | 48 | EAR99 | 70°C | 0°C | 5V | 2 | 61.7mm | RoHS Compliant | Lead Free | No | 48 | PDIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 3.8mm | CMOS | 1 | 120mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 48 | COMMERCIAL | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1270Y-70IND# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 36 | 3A991.B.2.A | 5V | 53.213mm | ROHS3 Compliant | Contains Lead | Tin | No | 36 | 5 YEAR DATA RETENTION | 36-DIP Module (0.600, 15.24mm) | 16 Mb | 70GHz | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 10.922mm | 8473.30.11.40 | 1 | DUAL | 5V | DS1270Y | 36 | 2.54mm | 16Mb 2M x 8 | Non-Volatile | 4.5V~5.5V | 2MX8 | 8 | 8b | 70 ns | NVSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST49LF080A-33-4C-WHE | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tray | 2010 | SST49 | yes | Active | 3 (168 Hours) | 32 | 3A991.B.1.A | 3.3V | 12.5mm | ROHS3 Compliant | Lead Free | Tin | No | 32 | 32-TFSOP (0.488, 12.40mm Width) | Parallel, SPI, Serial | No SVHC | 8 Mb | 1.05mm | 8.1mm | Surface Mount | 0°C~85°C TA | CMOS | 12mA | 1 | 12mA | e3 | DUAL | 260 | 3.3V | 40 | SST49LF080A | 32 | YES | 0.5mm | 3V | 3.6V | 120ns | 8Mb 1M x 8 | Non-Volatile | 11b | 3V~3.6V | 1MX8 | Asynchronous | 8b | 33MHz | 8b | 3V | FLASH | Parallel | 20μs | ||||||||||||||||||||||||||||||||||||||||||
 |
AT28C010-12JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1996 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | EEPROM | AT28C010 | 32-PLCC (13.97x11.43) | 120ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25LP032D-JKLE | ISSI, Integrated Silicon Solution Inc | 2.0405 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | yes | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | 5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.3V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 2.3V~3.6V | 4MX8 | 8 | 33554432 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL032N11WEI039 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2015 | GL-N | Obsolete | 3 (168 Hours) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 2M x 16 | Non-Volatile | 1.65V~3.6V | FLASH | Parallel | 110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3559S85PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.225mA | 256KX18 | 18 | 4718592 bit | 90MHz | 0.04A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDT71V3577YS80PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel |
-
-
-
-
-
71V432S5PFG Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 1 Mb kb 20mm mm 200mA mA 32b b
Price: 0.0000
RFQ -
DS1230AB-100+ Maxim Integrated
5V V Through Hole 28 Pin Memory IC DS1230AB 256 kb kb 39.12mm mm
Price: 23.5740
RFQ -
CY62157DV30L-55BVXET Cypress Semiconductor Corp
MoBL® Memory IC MoBL® Series CY62157
Price: 0.0000
RFQ -
-
-
-
-
-
-
BQ4010MA-85 Texas Instruments
5V V Through Hole Memory IC BQ4010 64 kb kb 37.72mm mm 50mA mA 8b b
Price: 0.0000
RFQ -
-
-
7008L15J8 Integrated Device Technology (IDT)
5V V 84 Pin Memory IC 512 kb kb 29.21mm mm
Price: 0.0000
RFQ -
-
24LC08BHT-E/ST Microchip Technology
Surface Mount 8 Pin Memory IC 24LC08BH 8 kb kb 4.4mm mm 3mA mA
Price: 0.0000
RFQ -
-
709349L7PF Integrated Device Technology (IDT)
5V V Surface Mount 100 Pin Memory IC 72 kb kb 14mm mm 400mA mA 18b b
Price: 0.0000
RFQ -
-
7132LA35PDG Integrated Device Technology (IDT)
Through Hole 48 Pin Memory IC 16 kb kb 61.7mm mm 120mA mA 8b b
Price: 0.0000
RFQ -
DS1270Y-70IND# Maxim Integrated
Through Hole 36 Pin Memory IC DS1270Y 16 Mb kb 53.213mm mm
Price: 0.0000
RFQ -
SST49LF080A-33-4C-WHE Microchip Technology
SST49 32 Pin Memory IC SST49 Series SST49LF080A 8 Mb kb 12.5mm mm 12mA mA 8b b
Price: 0.0000
RFQ -
-
-
-
IDT71V3559S85PF Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
Need Help?
