Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MT47H64M8CF-25E:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1 | 10mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H64M8 | YES | 0.8mm | R-PBGA-B60 | 1.7V | 1.9V | 400ps | 512Mb 64M x 8 | Volatile | 1.7V~1.9V | 64MX8 | 8 | 536870912 bit | 400MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71016S15Y8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71016 | 44-SOJ | 15ns | 1Mb 64K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100F-6TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 50 | EAR99 | 3.3V | 1 | 20.95mm | RoHS Compliant | No | 50 | AUTO/SELF REFRESH | 50-TSOP (0.400, 10.16mm Width) | 16 Mb | Surface Mount | -40°C~85°C TA | SDRAM | 1.2mm | 8542.32.00.02 | 1 | 110mA | e3 | MATTE TIN | DUAL | 260 | 3.3V | 40 | 50 | 0.8mm | 3V | 3.6V | 3-STATE | 5.5ns | 16Mb 1M x 16 | Volatile | 12b | 3V~3.6V | 1MX16 | 16 | 16b | 166MHz | 0.002A | COMMON | 2048 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||
 |
EDB1316BDBH-1DAUT-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Bulk | Active | 3 (168 Hours) | ROHS3 Compliant | 134-VFBGA | Surface Mount | -40°C~125°C TC | SDRAM - Mobile LPDDR2 | 134-VFBGA (10x11.5) | 1Gb 64M x 16 | Volatile | 1.14V~1.95V | 533MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SAGBHVA10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2016 | FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 24-TBGA | Parallel, SPI, Serial | 512 Mb | Surface Mount | -40°C~105°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 75mA | BOTTOM | 3V | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 8 ns | 512Mb 64M x 8 | Non-Volatile | 32b | 2.7V~3.6V | 64MX8 | 8 | Asynchronous | 133MHz | 0.0003A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V124SA10Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 32 | 3A991.B.2.B | 70°C | 0°C | 20.955mm | Non-RoHS Compliant | 32 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 32 | COMMERCIAL | YES | 1.27mm | 3.15V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.145mA | 128KX8 | 8 | 1048576 bit | 0.01A | 10 ns | COMMON | 3.15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D512M64D4NY-046 XT ES:D") |
MT53D512M64D4NY-046 XT ES:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | 1 (Unlimited) | -30°C~105°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 2133MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS46R16320E-6TLA2 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 66 | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | -40°C~105°C TA | SDRAM - DDR | 166MHz | 700ps | 512Mb 32M x 16 | Volatile | 13b | 2.3V~2.7V | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F2G08ABAGAWP-AAT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Bulk | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B256M32D1Z91MWC1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761SA200BGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 119-PBGA (14x22) | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F512G08EBHAFB17A3WC1-R | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | 3 (168 Hours) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C | FLASH - NAND (TLC) | 512Gb 64G x 8 | Non-Volatile | FLASH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MTFC8GLGDM-AIT Z TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | e•MMC™ | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 153-TFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 1.65V~3.6V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL512S11GHI023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | 56 | 9mm | ROHS3 Compliant | 56-VFBGA | 7mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 0.8mm | R-PBGA-B56 | 2.7V | 3.6V | 110ns | 512Mb 32M x 16 | Non-Volatile | 2.7V~3.6V | 32MX16 | 16 | 536870912 bit | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46TR16128CL-15HBLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.35V | 10 | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 667MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V64M4P-6T:K | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2009 | yes | Obsolete | 3 (168 Hours) | 66 | EAR99 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.24 | 1 | 175mA | 333MHz | e3 | MATTE TIN | DUAL | 260 | 2.5V | 30 | MT46V64M4 | 66 | 0.65mm | 2.3V | 2.7V | 3-STATE | 700ps | 256Mb 64M x 4 | Volatile | 15b | 2.3V~2.7V | 64MX4 | 4 | 4b | 167MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||
 |
24AA04-I/MC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Surface Mount | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-VFDFN Exposed Pad | I2C, Serial | 4 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | 1mm | 1 | 3mA | e3 | DUAL | 260 | 40 | 24AA04 | 8 | 0.5mm | 1.7V | 900ns | 4Kb 256 x 8 x 2 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXMR | NO | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||
|
CG7787AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M28W320HSU70ZA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 64 | 64-VFBGA | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NOR | M28W320 | 64-TFBGA (10.5x6.39) | 70ns | 32Mb 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1474V25-200BGI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tray | 2004 | NoBL™ | no | Active | 3 (168 Hours) | 209 | 3A991.B.2.A | 2.5V | 8 | 22mm | Non-RoHS Compliant | No | 209 | PIPELINED ARCHITECTURE | 209-BGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.96mm | 1 | 450mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 2.5V | CY7C1474 | 209 | 1mm | 2.375V | 2.625V | 3-STATE | 3ns | 72Mb 1M x 72 | Volatile | 20b | 2.375V~2.625V | 1MX72 | 72 | Synchronous | 200MHz | 72b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1021BNV33L-15ZXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 1996 | yes | Obsolete | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 160mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 3.3V | CY7C1021 | 0.8mm | 3V | 3.6V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 3V~3.6V | 16 | Asynchronous | 16b | COMMON | 2V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709279S9PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 5V | 3-STATE | 9 ns | 64kB | RAM, SDR, SRAM | 30b | 0.39mA | 66MHz | 0.015A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1371S-133AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2011 | Obsolete | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | DUAL | 3.3V | CY7C1371 | YES | 0.65mm | R-PDSO-G100 | 3.135V | 3.6V | 6.5ns | 18Mb 512K x 36 | Volatile | 3.135V~3.6V | 512KX36 | 36 | 18874368 bit | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDFP112A3PB-JD-F-D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TA | SDRAM - Mobile LPDDR3 | 24Gb 192M x 128 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D512M64D4BP-046 WT ES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1350S-133AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | 2016 | Active | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | 100-LQFP | Parallel | 133MHz | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | CY7C1350 | 100-TQFP (14x14) | 4ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.6V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16512A-125KBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 96 | 1.5V | 1 | 14mm | ROHS3 Compliant | 96 | AUTO/SELF REFRESH | 96-LFBGA | 8 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.4mm | 1 | 1.6GHz | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | 1.425V | 1.575V | 20ns | 8Gb 512M x 16 | Volatile | 15b | 1.425V~1.575V | 512MX16 | 16 | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MSM51V18165F-60T3 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Last Time Buy | 2 (1 Year) | 70°C | 0°C | ROHS3 Compliant | 50-TSOP (0.400, 10.16mm Width), 44 Leads | Parallel | Surface Mount | 0°C~70°C TA | DRAM | MSM5* | 50-TSOP | 30ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | DRAM | Parallel | 104ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41K512M16HA-125 AIT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 111 Weeks | Bulk | 2017 | Active | 96 | 1 | 14mm | AUTO/SELF REFRESH | 96-TFBGA | compliant | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 13.5ns | AEC-Q100 | 8Gb 512M x 16 | Volatile | 1.283V~1.45V | 512MX16 | 16 | 8589934592 bit | 800MHz | DRAM | Parallel |
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IS42S16100F-6TLI ISSI, Integrated Silicon Solution Inc
Surface Mount 50 Pin Memory IC 16 Mb kb 20.95mm mm 110mA mA
Price: 0.0000
RFQ -
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S25FL512SAGBHVA10 Cypress Semiconductor Corp
3/3.3V V Surface Mount FL-S Memory IC FL-S Series 512 Mb kb 8mm mm 75mA mA
Price: 0.0000
RFQ -
IDT71V124SA10Y8 Integrated Device Technology (IDT)
3.3V V 32 Pin Memory IC 20.955mm mm
Price: 0.0000
RFQ -
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71342LA25J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 240mA mA 8b b
Price: 0.0000
RFQ -
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MT46V64M4P-6T:K Micron Technology Inc.
Surface Mount 66 Pin Memory IC MT46V64M4 256 Mb kb 22.22mm mm 175mA mA
Price: 0.0000
RFQ -
24AA04-I/MC Microchip Technology
Surface Mount 8 Pin Memory IC 24AA04 4 kb kb 3mm mm 3mA mA
Price: 0.0000
RFQ -
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CY7C1474V25-200BGI Cypress Semiconductor Corp
Surface Mount NoBL™ 209 Pin Memory IC NoBL™ Series CY7C1474 72 Mb kb 22mm mm 450mA mA 72b b
Price: 0.0000
RFQ -
CY7C1021BNV33L-15ZXIT Cypress Semiconductor Corp
Surface Mount Memory IC CY7C1021 1 Mb kb 160mA mA 16b b
Price: 0.0000
RFQ -
709279S9PF8 Integrated Device Technology (IDT)
5V V 100 Pin Memory IC 512 kb kb 14mm mm
Price: 0.0000
RFQ -
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IS43TR16512A-125KBL-TR ISSI, Integrated Silicon Solution Inc
Memory IC 8 Gb kb 14mm mm
Price: 0.0000
RFQ -
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