Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | uPs/uCs/Peripheral ICs Type | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CY62147EV30LL-45B2XA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2001 | MoBL® | Obsolete | 3 (168 Hours) | 48 | 3V | 1 | 8mm | ROHS3 Compliant | Lead Free | No | 48 | 48-VFBGA | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 20mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 40 | CY62147 | 48 | 0.75mm | 2.2V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 2.2V~3.6V | 16 | Asynchronous | 0.000007A | 45 ns | 16b | COMMON | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C512R-12PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | EPROM - OTP | AT27C512 | 120ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC320/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.5V | ROHS3 Compliant | Lead Free | No | 8 | 1M ENDURANCE CYCLE; 200 YEARS DATA RETENTION | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 32 kb | Through Hole | 0°C~70°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 25LC320 | 8 | NO | 2.54mm | 3/5V | 5.5V | 230 ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
23A640-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2009 | yes | Active | Not Applicable | 8 | Through Hole | EAR99 | 1.8V | 1 | 9.27mm | ROHS3 Compliant | Lead Free | No | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 64 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 10mA | e3 | Matte Tin (Sn) - annealed | DUAL | 1.8V | 23A640 | 8 | 2.54mm | 3-STATE | 32 ns | 64Kb 8K x 8 | Volatile | 1b | 1.7V~1.95V | Synchronous | 20MHz | 8b | SEPARATE | SRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49LV002NT-90PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | FLASH | AT49LV002 | 32-PDIP | 90ns | 2Mb 256K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M24C02-RMN6P | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Bulk | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 2 kb | 1.25mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 800μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | M24C02 | 8 | 1.27mm | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC080A-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 8 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 1 | 6mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 25LC080A | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 100 ns | 8Kb 1K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 10MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128P10FFI0102 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | GL-P | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25PE40-VMC6G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2008 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 3.3V | ROHS3 Compliant | No | 8-VDFN Exposed Pad | SPI, Serial | 4 Mb | 75MHz | Surface Mount | -40°C~85°C TA | FLASH - NOR | M25PE40 | 8-MLP (3x3) | 4Mb 512K x 8 | Non-Volatile | 1b | 2.7V~3.6V | 75MHz | FLASH | SPI | 15ms, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D4DBBP-DC") |
MT53D4DBBP-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | SDRAM - Mobile LPDDR4 | Volatile | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7027S55G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 108-BPGA | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7027 | 512Kb 32K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B4DCNQ-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 200-VFBGA | Surface Mount | SDRAM - Mobile LPDDR4 | Volatile | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC8GACAAAM-4M IT | Micron Technology Inc. | 64.4574 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | 2014 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | CMOS | 8542.31.00.01 | NOT SPECIFIED | NOT SPECIFIED | SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C026AV-20AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2003 | yes | Obsolete | 3 (168 Hours) | 100 | EAR99 | 3.3V | 2 | 14mm | ROHS3 Compliant | Lead Free | No | 100 | FLOW-THROUGH | 100-LQFP | 256 kb | 20GHz | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1.6mm | 1 | 175mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | 260 | 3.3V | 30 | CY7C026 | 100 | 0.5mm | 3V | 3.6V | 3-STATE | 256Kb 16K x 16 | Volatile | 28b | 3V~3.6V | 16KX16 | 16 | Asynchronous | 0.00005A | 16b | COMMON | 2V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||
|
MT28GU256AAA2EGC-0AAT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Bulk | Automotive, AEC-Q100 | Not For New Designs | 3 (168 Hours) | 64 | 1.8V | 10mm | ROHS3 Compliant | No | 64-TBGA | 256 Mb | Surface Mount | -40°C~105°C TA | FLASH - NOR | 1.2mm | 1 | BOTTOM | 1.8V | YES | 1mm | R-PBGA-B64 | 1.7V | 2V | 96ns | 256Mb 32M x 8 | Non-Volatile | 24b | 1.7V~2V | 16MX16 | 16 | 133MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F2G16ABAEAWP-AIT:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 2Gb 128M x 16 | Non-Volatile | 2.7V~3.6V | 128MX16 | 16 | 2147483648 bit | 3.3V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3589S133DRI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 208 | 85°C | -40°C | 3.3V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | PQFP | Parallel | 3.45V | 3.15V | 2.3 Mb | 133MHz | 28mm | 3.5mm | CMOS | 4.1mm | 1 | 480mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 3.3V | 20 | 208 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | 256kB | RAM, SDR, SRAM | 32b | 64KX36 | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
|
MT40A1G16HBA-083E:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2016 | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1.2V | 1 | 14mm | ROHS3 Compliant | 96 | AUTO/SELF REFRESH | 96-TFBGA | 16 Gb | 9.5mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | 1.2GHz | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.8mm | 1.14V | 1.26V | 16Gb 1G x 16 | Volatile | 1.14V~1.26V | 1GX16 | 16 | SINGLE BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
47C16-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Tube | 2014 | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | EEPROM, SRAM | SYNCHRONOUS | 1.75mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | 40 | 47C16 | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | 400ns | TS 16949 | 16Kb 2K x 8 | Non-Volatile | 4.5V~5.5V | 2KX8 | 8 | 16384 bit | 1MHz | EERAM | I2C | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V16M16TG-75 IT:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | Obsolete | 2 (1 Year) | 66 | EAR99 | 1 | 22.22mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | not_compliant | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | e0 | TIN LEAD | DUAL | 235 | 2.5V | 30 | MT46V16M16 | 66 | YES | 0.65mm | R-PDSO-G66 | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 750ps | 256Mb 16M x 16 | Volatile | 0.4mA | 2.3V~2.7V | 16MX16 | 16 | 268435456 bit | 133MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
S34ML02G200TFB000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Tray | Automotive, AEC-Q100, ML-2 | Discontinued | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~105°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 256MX8 | 8 | 2147483648 bit | 3V | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140SA25J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 52-PLCC (19.13x19.13) | 25ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7050L35PQF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 132-BQFP Bumpered | Surface Mount | 0°C~70°C TA | SRAM - Quad Port, Asynchronous | IDT7050 | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53D512M16D1DS-046 AAT:D | Micron Technology Inc. | 13.8322 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~105°C TC | SDRAM - Mobile LPDDR4 | 8Gb 512M x 16 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761YSA183BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 70°C | 0°C | Non-RoHS Compliant | 165 | Parallel | 183MHz | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V128M4BN-5B:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2009 | Obsolete | 3 (168 Hours) | 60 | EAR99 | 2.5V | 1 | 12.5mm | ROHS3 Compliant | Lead Free | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.28 | 1 | 195mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 2.6V | 30 | MT46V128M4 | 60 | 1mm | 2.6V | 2.7V | 3-STATE | 700ps | 512Mb 128M x 4 | Volatile | 15b | 2.5V~2.7V | 128MX4 | 4 | 4b | 200MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416YL12PHI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V416 | 44-TSOP II | 12ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7164L85DB | Renesas Electronics America Inc. | 27.4403 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 28-CDIP (0.600, 15.24mm) | Through Hole | -55°C~125°C TA | SRAM - Asynchronous | 28-CerDip | 85ns | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
25LC040AT-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 4 kb | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.7V | 40 | 25LC040A | 8 | 1.27mm | 50 ns | 4Kb 512 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64B-15SU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 28 | 5V | 17.9mm | ROHS3 Compliant | Lead Free | Tin | No | 28 | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 28-SOIC (0.295, 7.50mm Width) | Parallel, SPI | No SVHC | 64 kb | 150GHz | 7.5mm | Surface Mount | -40°C~85°C TC | CMOS | 2.65mm | 1 | 40mA | e3 | DUAL | 250 | 5V | 40 | AT28C64 | 1.27mm | 5V | 150ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 0.0001A | 10 | 100000 Write/Erase Cycles | 10ms | 5V | YES | YES | 64words | EEPROM | Parallel | 10ms |
-
CY62147EV30LL-45B2XA Cypress Semiconductor Corp
Surface Mount MoBL® 48 Pin Memory IC MoBL® Series CY62147 4 Mb kb 8mm mm 20mA mA 16b b
Price: 0.0000
RFQ -
-
-
23A640-I/P Microchip Technology
Through Hole 8 Pin Memory IC 23A640 64 kb kb 9.27mm mm 10mA mA 8b b
Price: 0.0000
RFQ -
-
M24C02-RMN6P STMicroelectronics
2/5V V Surface Mount 8 Pin Memory IC M24C02 2 kb kb 4.9mm mm 800μA mA
Price: 0.0000
RFQ -
25LC080A-E/ST Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 25LC080A 8 kb kb 4.4mm mm 6mA mA
Price: 0.0000
RFQ -
-
-
-
-
-
-
CY7C026AV-20AXC Cypress Semiconductor Corp
Surface Mount 100 Pin Memory IC CY7C026 256 kb kb 14mm mm 175mA mA 16b b
Price: 0.0000
RFQ -
MT28GU256AAA2EGC-0AAT Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 256 Mb kb 10mm mm
Price: 0.0000
RFQ -
-
70V3589S133DRI Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 2.3 Mb kb 28mm mm 480mA mA 36b b
Price: 0.0000
RFQ -
-
-
MT46V16M16TG-75 IT:F Micron Technology Inc.
2.5V V 66 Pin Memory IC MT46V16M16 22.22mm mm
Price: 0.0000
RFQ -
S34ML02G200TFB000 Cypress Semiconductor Corp
Automotive, AEC-Q100, ML-2 Memory IC Automotive, AEC-Q100, ML-2 Series 18.4mm mm
Price: 0.0000
RFQ -
-
-
MT53D512M16D1DS-046 AAT:D Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 13.8322
RFQ -
-
MT46V128M4BN-5B:F Micron Technology Inc.
2.6V V Surface Mount 60 Pin Memory IC MT46V128M4 512 Mb kb 12.5mm mm 195mA mA
Price: 0.0000
RFQ -
-
-
25LC040AT-E/SN Microchip Technology
Surface Mount 8 Pin Memory IC 25LC040A 4 kb kb 4.9mm mm 5mA mA
Price: 0.0000
RFQ -
AT28C64B-15SU Microchip Technology
5V V Surface Mount Memory IC AT28C64 64 kb kb 17.9mm mm 40mA mA
Price: 0.0000
RFQ
Need Help?
