Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Halogen Free | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71V416YS10PHG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2005 | yes | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | RoHS Compliant | No | 44 | TSOP | Parallel | 3.6V | 3V | 4 Mb | CMOS | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 10 ns | RAM, SRAM - Asynchronous | 18b | 16 | Asynchronous | 0.02A | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C08A-10PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | EEPROM | AT24C08 | 8-PDIP | 4.5μs | 8Kb 1K x 8 | Non-Volatile | 4.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C32M32MD1A-5BIN | Alliance Memory, Inc. | 7.0723 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-VFBGA | 8mm | Surface Mount | -40°C~85°C TJ | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 1.7V | 1.95V | 5ns | 1Gb 32M x 32 | Volatile | 1.7V~1.9V | 32MX32 | 32 | 1073741824 bit | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LC025-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | No SVHC | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 4.5V | 40 | 24LC025 | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761SA183BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | Parallel | not_compliant | 183MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.35mA | 128KX36 | 36 | 4718592 bit | 0.035A | 3.3 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||
.png "70P254L55BYGI") |
70P254L55BYGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Bulk | 2009 | yes | Active | 3 (168 Hours) | 81 | EAR99 | 85°C | -40°C | 1.8V | 2 | 5mm | RoHS Compliant | Lead Free | No | 81 | TFBGA | Parallel | 1.9V | 1.7V | 128 kb | 5mm | 1mm | CMOS | 1 | e1 | TIN SILVER COPPER | BOTTOM | BALL | 260 | 1.8V | 30 | 81 | INDUSTRIAL | YES | SRAMs | 3-STATE | 55 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | 0.000006A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||
|
7006L25G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2008 | Active | 70°C | 0°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | Parallel | 5.5V | 4.5V | 128 kb | 29.46mm | 3.68mm | 220mA | 25 ns | 16kB | RAM, SDR, SRAM | 28b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3557S75BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 275mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 7.5 ns | RAM, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
 |
70V25L20PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.5mm | SRAMs | 3-STATE | 25 ns | 16kB | RAM, SDR, SRAM | 26b | 0.195mA | 8KX16 | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65703S75PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.275mA | 256KX36 | 36 | 9437184 bit | 100MHz | 0.04A | 7.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1061DV33-10BV1XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 1996 | Obsolete | 3 (168 Hours) | 48 | 3.3V | 1 | 9.5mm | ROHS3 Compliant | Lead Free | No | 48 | 48-VFBGA | 16 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 175mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3.3V | 40 | CY7C1061 | 48 | 0.75mm | 3V | 3.6V | 3-STATE | 16Mb 1M x 16 | Volatile | 20b | 3V~3.6V | 16 | Asynchronous | 0.025A | 16b | COMMON | 2V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT24C16ZI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | 8 | 5V | 3.1mm | RoHS Compliant | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 16 kb | 950μm | 3.1mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 2mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3.3V | CAT24C16 | 0.65mm | 1.7V | 900ns | 16Kb 2K x 8 | Non-Volatile | 1.7V~5.5V | 16KX1 | 400kHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V016SA10Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | 70°C | 0°C | 1 | 28.575mm | RoHS Compliant | 44 | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 44 | COMMERCIAL | YES | 1.27mm | 3.15V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.16mA | 64KX16 | 16 | 1048576 bit | 0.01A | 10 ns | YES | COMMON | 3.15V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DF021A-MHN-Y | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2013 | yes | Active | 3 (168 Hours) | 6mm | ROHS3 Compliant | IT ALSO OPERATES AT 2.3V MIN | 8-UDFN Exposed Pad | SPI, Serial | 5mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 0.6mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N | 1.65V | 3.6V | 2Mb 256K x 8 | Non-Volatile | 1.65V~3.6V | 2MX1 | 1 | 2097152 bit | 104MHz | 1.8V | FLASH | SPI | 8μs, 2.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V65703S80BQ8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | Parallel | 9 Mb | 13mm | 1.2mm | CMOS | e0 | TIN LEAD | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | YES | SRAMs | 3-STATE | RAM, SRAM | 18b | 0.25mA | 256KX36 | 95MHz | 0.04A | 8 ns | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1347G-133AXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 100-TQFP (14x20) | 4ns | 4.5Mb 128K x 36 | Volatile | 3.15V~3.6V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY15B104Q-SXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | F-RAM™ | Active | 3 (168 Hours) | 8 | EAR99 | 3.3V | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 4 Mb | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 2.03mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 1.27mm | 2V | 3.6V | 9 ns | 4Mb 512K x 8 | Non-Volatile | 2V~3.6V | 8 | 8b | 40MHz | FRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT24C04ZI-GT3 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2010 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 3.1mm | RoHS Compliant | Lead Free | Gold | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 4 kb | 950μm | 3.1mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 2mA | e4 | DUAL | 260 | 3.3V | 40 | CAT24C04 | 8 | 0.65mm | 1.7V | Not Qualified | Halogen Free | 900ns | 4Kb 512 x 8 | Non-Volatile | 1.7V~5.5V | 4KX1 | 400kHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||
 |
CAT24C16C4ATR | ON Semiconductor | 0.3714 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 4 | 0.86mm | ROHS3 Compliant | Lead Free | 4 | 4-XFBGA, WLCSP | 2-Wire, I2C, Serial | 16 kb | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.38mm | 1 | 2mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | CAT24C16 | 4 | 1.7V | Not Qualified | 1.8/5V | 5.5V | Halogen Free | 900ns | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 16KX1 | 1 | 400kHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||
 |
R1LV5256ESA-5SR#S0 | Renesas Electronics America | 5.1231 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | EAR99 | 3V | 1 | ROHS3 Compliant | No | 28 | 28-TSSOP (0.465, 11.80mm Width) | 256 kb | Surface Mount | 0°C~70°C TA | R1LV5256E | 28 | 256Kb 32K x 8 | Volatile | 15b | 2.7V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L12Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 36 | 3A991.B.2.A | 70°C | 0°C | 23.495mm | RoHS Compliant | 36 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 36 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.155mA | 512KX8 | 8 | 4194304 bit | 0.01A | 12 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43DR16160B-25DBLI | ISSI, Integrated Silicon Solution Inc | 4.3879 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | Copper, Silver, Tin | 84 | AUTO/SELF REFRESH | 84-TFBGA | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | 330mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 10 | 0.8mm | 1.7V | 1.9V | 400ps | 256Mb 16M x 16 | Volatile | 15b | 1.7V~1.9V | 16MX16 | 16 | 16b | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||
|
34LC02-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tube | 2011 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.27mm | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | SYNCHRONOUS | 5.334mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | NOT APPLICABLE | 2.5V | NOT APPLICABLE | 34LC02 | 8 | NO | 1.27mm | R-PDIP-T8 | 2.2V | Not Qualified | 2.5/5V | 5.5V | 400ns | 2Kb 256 x 8 | Non-Volatile | 0.003mA | 2.2V~5.5V | 256X8 | 8 | 2048 bit | SERIAL | 1MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||
 |
24AA024T-I/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA024 | 8 | 0.65mm | 1.7V | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||
|
24C02CT-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | Lead Free | Gold | No | 8 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 24C02C | 8 | 0.65mm | 5V | 3500ns | 2Kb 256 x 8 | Non-Volatile | 4.5V~5.5V | 8 | 100kHz | 0.00005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 1.5ms | I2C | 1010DDDR | EEPROM | I2C | 1.5ms | ||||||||||||||||||||||||||||||||||||||||
 |
7007L55PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7007 | 80-TQFP (14x14) | 55ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA024T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 2 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA024 | 8 | 1.27mm | 1.7V | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||
 |
IS29GL128-70SLET | ISSI, Integrated Silicon Solution Inc | 5.7237 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 70ns | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 128MX1 | 1 | 134217728 bit | 3V | FLASH | Parallel | 200μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS64LPS25636A-166TQLA3-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 100 | 20mm | ROHS3 Compliant | 100 | PIPELINED ARCHITECTURE | 100-LQFP | unknown | 14mm | Surface Mount | -40°C~125°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | QUAD | 3.3V | YES | 0.65mm | 3.135V | 3.465V | 3.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 256KX36 | 36 | 9437184 bit | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PCA8581T/6,118 | NXP USA Inc. | 2.2081 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 1997 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | 8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -25°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 8542.32.00.51 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | PCA8581 | 8 | YES | 1.27mm | R-PDSO-G8 | 4.5V | Not Qualified | 5V | 5.5V | 1Kb 128 x 8 | Non-Volatile | 0.001mA | 4.5V~5.5V | 128X8 | 8 | 1024 bit | SERIAL | 100kHz | 0.00001A | 10 | 10000 Write/Erase Cycles | I2C | 1010DDDR | EEPROM | I2C | 10ms |
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