Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CY7C1426AV18-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Obsolete | 5 (48 Hours) | 165 | 3A991.B.2.A | 1.8V | 17mm | Non-RoHS Compliant | Contains Lead | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 36 Mb | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | BOTTOM | 220 | 1.8V | NOT SPECIFIED | CY7C1426 | 165 | YES | 1mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450 ps | 36Mb 4M x 9 | Volatile | 0.8mA | 1.7V~1.9V | 4MX9 | 9 | 250MHz | 0.33A | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D4D1ABP-DC") |
MT53D4D1ABP-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MR4A08BYS35R | Everspin Technologies Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2014 | yes | Active | 3 (168 Hours) | 44 | EAR99 | 18.41mm | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | MRAM (Magnetoresistive RAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.71 | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 44 | YES | 0.8mm | 3V | Not Qualified | 3.3V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 0.17mA | 3V~3.6V | 2MX8 | 8 | 16777216 bit | 8b | 0.014A | 35 ns | RAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85R1002ANC-GE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 1999 | Active | 2 (1 Year) | 85°C | -40°C | RoHS Compliant | Lead Free | 48 | 48-TFSOP (0.488, 12.40mm Width) | Parallel | 3.6V | Unknown | 3V | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 48-TSOP | 150ns | 1Mb 64K x 16 | Non-Volatile | 3V~3.6V | FRAM | Parallel | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C86B-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.46mm | ROHS3 Compliant | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | 16 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | 4.32mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 93C86B | 8 | 2.54mm | 5V | 16Kb 1K x 16 | Non-Volatile | 4.5V~5.5V | 8 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
48L640T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | EEPROM, SRAM | SYNCHRONOUS | 1.75mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 64Kb 8K x 8 | Non-Volatile | 2.7V~3.6V | 8KX8 | 8 | 65536 bit | SERIAL | 66MHz | EERAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71V016SA15BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2007 | no | Active | 3 (168 Hours) | 48 | 70°C | 0°C | 3.3V | 1 | 7mm | RoHS Compliant | Contains Lead | No | 48 | Parallel | 3.6V | 3V | 1 Mb | 7mm | 1.4mm | CMOS | 1 | 130mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C32M16SC-7TINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.8mm | R-PDSO-G54 | 3V | 3.6V | 17ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 32MX16 | 16 | 536870912 bit | 133MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG8120AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C128B-TH-B | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 1997 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 3.3V | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 5.5V | 1.8V | 128 kb | 400kHz | Surface Mount | -40°C~85°C TA | EEPROM | 3mA | 1MHz | AT24C128 | 8-TSSOP | 550ns | 128Kb 16K x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA10PHGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | yes | Active | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | 1 | 18.41mm | RoHS Compliant | Lead Free | No | 44 | TSOP | Parallel | 3.6V | 3.15V | 1 Mb | 10.16mm | 1mm | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 44 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 10 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS28DG02E-3C+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 9.7mm | ROHS3 Compliant | 28-TSSOP (0.173, 4.40mm Width) Exposed Pad | SPI, Serial | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 3.3V | NOT SPECIFIED | DS28DG02 | 28 | YES | 0.65mm | R-PDSO-G28 | 2.2V | Not Qualified | 2Kb 256 x 8 | Non-Volatile | 0.0008mA | 2.2V~5.25V | 256X8 | 8 | 2048 bit | 2MHz | 0.0001A | 40 | 200000 Write/Erase Cycles | HARDWARE | 3V | SPI | EEPROM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT24C02HU4IGT3A | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 5 | 2.9mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | 1.6mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1mm | 1 | e3 | MATTE TIN | DUAL | 5V | 5 | YES | 0.95mm | R-PDSO-G5 | 1.7V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 16X16 | 16 | 256 bit | SERIAL | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC16BT-I/MC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | No | 8 | 8-VFDFN Exposed Pad | I2C, Serial | No SVHC | 16 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | 1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 24LC16B | 8 | 0.5mm | 2.5V | 2/5V | 5.5V | 900ns | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA76C-I/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2004 | yes | Active | 2 (1 Year) | 8 | SMD/SMT | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Serial | No SVHC | 8 kb | 950μm | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 93AA76C | 8 | 0.65mm | 2/5V | 5.5V | 100 ns | 8Kb 1K x 8 512 x 16 | Non-Volatile | 1.8V~5.5V | 512X16 | 3MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D512M32D2NP-046 WT ES:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 1.1V | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C02N-10SI-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C02 | 8-SOIC | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG7748AAT | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C4096A-12JIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2001 | Active | 3 (168 Hours) | 85°C | -40°C | 5V | 1 | 23.62mm | ROHS3 Compliant | Lead Free | No | 36 | 36-BSOJ (0.400, 10.16mm Width) | Parallel | 5.5V | No SVHC | 4.5V | 4 Mb | 2.95mm | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 36-SOJ | 12ns | 4Mb 512K x 8 | Volatile | 19b | 4.5V~5.5V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V124SA15YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 32 | 3A991.B.2.B | 85°C | -40°C | 20.955mm | Non-RoHS Compliant | 32 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 32 | INDUSTRIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.12mA | 128KX8 | 8 | 1048576 bit | 0.01A | 15 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SFEM4096B1EA1TO-I-GE-111-STD | Swissbit | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tray | 2016 | EM-20 | Active | 3 (168 Hours) | 153 | ROHS3 Compliant | 153-VFBGA | Surface Mount | -40°C~85°C | FLASH - NAND (MLC) | SYNCHRONOUS | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | R-PBGA-B153 | 2.7V | 3.6V | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | 4GX8 | 8 | 34359738368 bit | 200MHz | 2.7V | FLASH | eMMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M24C64-RMN6P | STMicroelectronics | 0.2660 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Bulk | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 64 kb | 1.25mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 2.5V | M24C64 | 8 | 1.27mm | 2/5V | 5.5V | 450ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C4M32SA-6TCN | Alliance Memory, Inc. | 3.7809 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | yes | Active | 3 (168 Hours) | 86 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G86 | 3V | 3.6V | 5.4ns | 128Mb 4M x 32 | Volatile | 3V~3.6V | 4MX32 | 32 | 134217728 bit | 166MHz | DRAM | Parallel | 2ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24C02C-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | No SVHC | 2 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24C02C | 8 | 1.27mm | 5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 4.5V~5.5V | 400kHz | 0.00005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 1ms | I2C | 1010DDDR | EEPROM | I2C | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC28F256P30BFF TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | StrataFlash™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | PC28F256P30 | 64-EasyBGA (10x13) | 100ns | 256Mb 16M x 16 | Non-Volatile | 1.7V~2V | 52MHz | FLASH | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7016S35JI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 144Kb 16K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41K1G4DA-107:P | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Active | 3 (168 Hours) | 78 | EAR99 | 1.35V | 1 | 10.5mm | ROHS3 Compliant | Lead Free | Copper, Silver, Tin | 78 | AUTO/SELF REFRESH | 78-TFBGA | 4 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.35V | 0.8mm | 1.283V | 1.45V | 20ns | 4Gb 1G x 4 | Volatile | 16b | 1.283V~1.45V | 1GX4 | 4 | 4b | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV5256ESP-5SR#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 3V | 1 | ROHS3 Compliant | No | 28 | 28-SOIC (0.342, 8.69mm Width) | 256 kb | Surface Mount | 0°C~70°C TA | CMOS | 2.4mm | 1 | DUAL | 3V | R1LV5256E | 28 | YES | 2.7V | 3.6V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 0.025mA | 2.7V~3.6V | 32KX8 | 8 | 0.000008A | 55 ns | COMMON | 2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29JL064J70TFI000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tray | 2011 | JL-J | Active | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.5mm | ROHS3 Compliant | Lead Free | Tin | No | 48 | TOP BOOT BLOCK, BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | No SVHC | 64 Mb | 1.05mm | 12.1mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8542.32.00.51 | 1 | 16mA | e3 | DUAL | 260 | 3V | 40 | 0.5mm | 2.7V | 3/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | 4MX16 | Asynchronous | 8b | 0.000005A | 70 ns | 3V | YES | YES | YES | 16126 | YES | YES | FLASH | Parallel | 70ns | 8K64K | BOTTOM/TOP |
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