Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AT45DB161E-MHD-Y | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tray | 1997 | yes | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 3.3V | 6.1mm | ROHS3 Compliant | Gold | No | 8 | 8-UDFN Exposed Pad | SPI, Serial | 16 Mb | 550μm | 5.1mm | Surface Mount | -40°C~85°C TC | CMOS | 1 | 26mA | e4 | DUAL | 260 | 3V | 8 | 1.27mm | 2.5V | 3.6V | 6 ns | 16Mb 528Bytes x 4096 pages | Non-Volatile | 21b | 2.5V~3.6V | 16MX1 | Synchronous | 8b | 85MHz | 0.00001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 512B | SPI | FLASH | SPI | 8μs, 4ms | ||||||||||||||||||||||||||||||||||||||||||
 |
CY14B256L-SZ35XC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 32 | 20.726mm | ROHS3 Compliant | 32-SOIC (0.295, 7.50mm Width) | unknown | 7.5057mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.54mm | 1 | e3 | MATTE TIN | DUAL | 260 | 3V | 20 | 32 | YES | 1.27mm | R-PDSO-G32 | 2.7V | COMMERCIAL | 3.6V | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | 32KX8 | 8 | 262144 bit | 35 ns | NVSRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC4M32B2P-6 IT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2012 | Obsolete | 2 (1 Year) | 86 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e3 | TIN | DUAL | 3.3V | MT48LC4M32B2 | 86 | YES | 0.5mm | R-PDSO-G86 | 3V | 3.6V | 5.5ns | 128Mb 4M x 32 | Volatile | 3V~3.6V | 4MX32 | 32 | 134217728 bit | 167MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130SA25TF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7130 | 64-TQFP (10x10) | 25ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46DR16128A-3DBLA2 | ISSI, Integrated Silicon Solution Inc | 34.4423 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 84 | 1 | 13.5mm | ROHS3 Compliant | 84 | AUTO/SELF REFRESH | 84-LFBGA | 10.5mm | Surface Mount | -40°C~105°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.4mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 450ps | AEC-Q100 | 2Gb 128M x 16 | Volatile | 0.45mA | 1.7V~1.9V | 128MX16 | 16 | 2147483648 bit | 333MHz | 0.03A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F4G16ABADAH4-IT:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Surface Mount | Bulk | 2012 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 3.3V | ROHS3 Compliant | No | 63 | 63-VFBGA | Parallel | 3.6V | 2.7V | 4 Gb | 1mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | 35mA | MT29F4G16 | 85°C | 63-VFBGA (9x11) | 25 ns | 4Gb 256M x 16 | Non-Volatile | 29b | 2.7V~3.6V | Asynchronous | 16b | 2kB | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S83200D-6TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 180mA | 1.2mm | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 54 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | 256Mb 32M x 8 | Volatile | 15b | 3V~3.6V | 32MX8 | 8 | 8b | 166MHz | 0.003A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V64M8TG-75E:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2007 | Obsolete | 4 (72 Hours) | 66 | EAR99 | 1 | 22.22mm | Non-RoHS Compliant | Contains Lead | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | not_compliant | 10.16mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e0 | TIN LEAD | DUAL | 235 | 2.5V | 30 | MT46V64M8 | 66 | YES | 0.65mm | R-PDSO-G66 | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 750ps | 512Mb 64M x 8 | Volatile | 2.3V~2.7V | 64MX8 | 8 | 536870912 bit | 133MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16160G-7BL | ISSI, Integrated Silicon Solution Inc | 5.3630 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 8mm | ROHS3 Compliant | 54 | AUTO/SELF REFRESH | 54-TFBGA | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | 130mA | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 54 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | 256Mb 16M x 16 | Volatile | 15b | 3V~3.6V | 16MX16 | 16 | 16b | 143MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
BU9829GUL-WE2 | ROHM Semiconductor | 5.5534 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 9 | 1.74mm | ROHS3 Compliant | 9 | 9-UFBGA, WLCSP | SPI, Serial | 16 kb | 1.65mm | Surface Mount | -30°C~85°C TA | CMOS | SYNCHRONOUS | 0.55mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | BU9829 | 9 | 0.5mm | 1.6V | Not Qualified | 1.8/3.3V | 3.6V | 16Kb 2K x 8 | Non-Volatile | 0.002mA | 1.6V~3.6V | 2KX8 | 8 | 5MHz | 0.000001A | 10 | 100000 Write/Erase Cycles | SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46DR16320D-3DBLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | 84 | PROGRAMMABLE CAS LATENCY | 84-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450ps | 512Mb 32M x 16 | Volatile | 13b | 0.23mA | 1.7V~1.9V | 32MX16 | 16 | 333MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||
 |
IS46TR16128B-15HBLA2 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1.5V | 1 | 13mm | ROHS3 Compliant | 96 | AUTO/SELF REFRESH | 96-TFBGA | 2 Gb | Surface Mount | -40°C~105°C TC | SDRAM - DDR3 | ASYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.5V | YES | 0.8mm | 1.425V | 1.575V | 20ns | 2Gb 128M x 16 | Volatile | 14b | 1.425V~1.575V | 128MX16 | 16 | 667MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS42S81600F-7TL | ISSI, Integrated Silicon Solution Inc | 2.4293 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | ROHS3 Compliant | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 128 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | 100mA | e3 | Matte Tin (Sn) - annealed | DUAL | 3.3V | 54 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | 128Mb 16M x 8 | Volatile | 14b | 3V~3.6V | 16MX8 | 8 | 8b | 143MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D1G32D4NQ-046 WT ES:E") |
MT53D1G32D4NQ-046 WT ES:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32200C1-6TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 86 | EAR99 | 1 | 22.22mm | RoHS Compliant | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | unknown | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e3 | MATTE TIN | DUAL | 260 | 3.3V | 40 | 86 | YES | 0.5mm | 3V | Not Qualified | 3.6V | 5.5ns | 64Mb 2M x 32 | Volatile | 3.15V~3.45V | 2MX32 | 32 | 32b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100E-7TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 50 | EAR99 | 3.3V | 1 | 21.08mm | RoHS Compliant | Tin | No | 50 | AUTO/SELF REFRESH | 50-TSOP (0.400, 10.16mm Width) | 16 Mb | 1.05mm | 10.29mm | Surface Mount | -40°C~85°C TA | SDRAM | 150mA | 8542.32.00.02 | 1 | 150mA | e3 | DUAL | 260 | 3.3V | 40 | 50 | 0.8mm | 3V | 3.6V | 3-STATE | 5.5ns | 16Mb 1M x 16 | Volatile | 12b | 3V~3.6V | 1MX16 | 16b | 143MHz | 0.004A | COMMON | 2048 | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49RL36160-125BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 168 | EAR99 | 1 | 13.5mm | ROHS3 Compliant | 168 | AUTO REFRESH | 168-LBGA | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | 800MHz | BOTTOM | 1.35V | 168 | YES | 1mm | 1.28V | Not Qualified | 1.35V | 1.42V | 3-STATE | 12ns | 576Mb 16M x 36 | Volatile | 2.615mA | 1.28V~1.42V | 16MX36 | 36 | 603979776 bit | 36b | 0.125A | COMMON | DRAM | Parallel | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61QDB22M18C-250M3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | Non-RoHS Compliant | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUAD | 1.4mm | 8542.32.00.41 | 1 | BOTTOM | 1.8V | YES | 1mm | R-PBGA-B165 | 1.71V | 1.89V | 8.4ns | 36Mb 2M x 18 | Volatile | 1.71V~1.89V | 2MX18 | 18 | 37748736 bit | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT49H16M16FM-5 TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 144-TFBGA | Surface Mount | 0°C~95°C TC | DRAM | MT49H16M16 | 144-μBGA (18.5x11) | 256Mb 16M x 16 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC512T-E/SM16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 5.26mm | 8-SOIC (0.209, 5.30mm Width) | compliant | 5.25mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 2.03mm | 1 | DUAL | 5V | 25LC512 | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | AEC-Q100; TS 16949 | 512Kb 64K x 8 | Non-Volatile | 2.5V~5.5V | 512KX1 | 1 | 524288 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA014T-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 1 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA014 | 8 | 0.65mm | 2/5V | 5.5V | 900ns | 1Kb 128 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||
|
IS43TR16256A-15HBLI | ISSI, Integrated Silicon Solution Inc | 5.5035 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 96 | 1.5V | 1 | 13mm | ROHS3 Compliant | Copper, Silver, Tin | 96 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 96-TFBGA | No SVHC | 4 Gb | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 1 | 200mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.5V | 0.8mm | 1.425V | 1.575V | 20ns | 4Gb 256M x 16 | Volatile | 18b | 1.425V~1.575V | 256MX16 | 16 | 16b | 667MHz | 2kB | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB011D-SSH-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 1997 | Obsolete | 2 (1 Year) | 8 | EAR99 | 3.3V | 4.925mm | RoHS Compliant | Gold | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 1 Mb | Surface Mount | -40°C~85°C TC | CMOS | 1.75mm | 1 | 25mA | e4 | DUAL | 260 | 3V | 8 | 1.27mm | 2.7V | 3.6V | 6 ns | 1Mb 264Bytes x 512 pages | Non-Volatile | 1b | 2.7V~3.6V | 1MX1 | 1 | Synchronous | 8b | 66MHz | 0.000025A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
IS42RM32800D-75BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | 90 | 90-TFBGA | Parallel | 2.7V | 2.3V | 133MHz | Surface Mount | 0°C~70°C TA | SDRAM - Mobile | 133MHz | 90-TFBGA (8x13) | 5.4ns | 256Mb 8M x 32 | Volatile | 2.3V~3V | 32b | 133MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT44K32M18RB-093:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2013 | Obsolete | 3 (168 Hours) | 168 | EAR99 | 1.35V | 1 | 13.5mm | ROHS3 Compliant | Lead Free | No | 168 | AUTO/SELF REFRESH | 168-TBGA | 576 Mb | Surface Mount | 0°C~95°C TC | CMOS | 1.2mm | 8542.32.00.32 | 1 | 2.133GHz | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.35V | 30 | MT44K32M18 | 168 | 1mm | 1.28V | 1.42V | 10ns | 576Mb 32M x 18 | Volatile | 24b | 1.28V~1.42V | 32MX18 | 18 | 18b | 1067MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66B-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 1998 | yes | Active | Not Applicable | 8 | EAR99 | 9.27mm | ROHS3 Compliant | Lead Free | No | 8 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 4 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 93LC66B | 8 | 2.54mm | 3/5V | 5.5V | 3-STATE | 250 ns | 4Kb 256 x 16 | Non-Volatile | 2.5V~5.5V | 256X16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||
 |
AT93C46C-10SI-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT93C46C | 8-SOIC | 1Kb 128 x 8 64 x 16 | Non-Volatile | 2.5V~5.5V | 2MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LQ32DSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 | Non-Volatile | 1.65V~2V | 120MHz | FLASH | SPI - Quad I/O | 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C025E-55AXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2004 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 5V | 2 | 14mm | ROHS3 Compliant | Lead Free | No | 100 | 100-LQFP | 128 kb | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1.6mm | 1 | 230mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | 260 | 5V | 40 | CY7C025 | 100 | 0.5mm | 5V | 3-STATE | 128Kb 8K x 16 | Volatile | 26b | 4.5V~5.5V | 8KX16 | 16 | Asynchronous | 0.0015A | 55 ns | 16b | COMMON | 2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||
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IS42VM32160E-6BLI | ISSI, Integrated Silicon Solution Inc | 10.3371 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 1.7V | 1.95V | 5.5ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 16MX32 | 32 | 536870912 bit | 166MHz | DRAM | Parallel |
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