Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS61WV25616BLL-10KLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | ROHS3 Compliant | 44 | 44-BSOJ (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | DUAL | YES | 1.27mm | Not Qualified | 2.5/3.3V | 3-STATE | 4Mb 256K x 16 | Volatile | 0.045mA | 2.4V~3.6V | 256KX16 | 16 | 4194304 bit | 0.009A | 10 ns | COMMON | 2V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14E256LA-SZ45XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2009 | yes | Active | 3 (168 Hours) | 32 | EAR99 | 5V | 20.726mm | ROHS3 Compliant | Lead Free | Gold, Tin | No | 32 | 32-SOIC (0.295, 7.50mm Width) | No SVHC | 256 kb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 2.54mm | 1 | 52mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 30 | CY14*256 | 32 | 1.27mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 8b | 0.005A | 45 ns | 8b | NVSRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT29F128G08CECDBJ4-6R:D TR") |
MT29F128G08CECDBJ4-6R:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H128M8SH-25E:M | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2014 | yes | Active | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 10mm | ROHS3 Compliant | Copper, Silver, Tin | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 1 Gb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 1.2mm | 8542.32.00.32 | 1 | 400MHz | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | MT47H128M8 | 60 | 0.8mm | 1.7V | 1.9V | 3-STATE | 400ps | 1Gb 128M x 8 | Volatile | 14b | 1.7V~1.9V | 128MX8 | 8 | 8b | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7038L15PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | TQFP | Parallel | 5.5V | 4.5V | 1.1 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 340mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM | 32b | 64KX18 | Asynchronous | 0.003A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT42L64M32D2HE-18 IT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 134-VFBGA | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2 | 2Gb 64M x 32 | Volatile | 1.14V~1.3V | 533MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B104N-BA45XIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | 2007 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.2.B | 10mm | ROHS3 Compliant | 48-TFBGA | unknown | 6mm | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 20 | CY14B104 | 48 | YES | 0.75mm | R-PBGA-B48 | 2.7V | SRAMs | Not Qualified | 3/3.3V | 3.6V | 4Mb 256K x 16 | Non-Volatile | 0.052mA | 2.7V~3.6V | 256KX16 | 16 | 4194304 bit | 0.005A | 45 ns | NVSRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | 4 kb | 3.9mm | Surface Mount | 0°C~70°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 93LC66 | 8 | YES | 1.27mm | 2V | 3/5V | 6V | 3-STATE | 6 ms | 4Kb 512 x 8 256 x 16 | Non-Volatile | 2.5V~5.5V | 8 | 2MHz | 0.00003A | 16 | 200 | 10000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
93LC56C-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | No SVHC | 2 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 93LC56C | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 200 ns | 2Kb 256 x 8 128 x 16 | Non-Volatile | 2.5V~5.5V | 3MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29E2T08CUHBBM4-3:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Not For New Designs | 0°C~70°C TA | FLASH - NAND | 2Tb 256G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PZ28F064M29EWLA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 2012 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 8mm | ROHS3 Compliant | No | 48 | 48-VFBGA | 64 Mb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | PZ28F064 | YES | 0.8mm | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.025mA | 2.7V~3.6V | 4MX16 | 16 | 0.00012A | 65 ns | 8 | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 60ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62136VNLL-70BAXA | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | MoBL® | yes | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFBGA | unknown | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 48 | 2Mb 128K x 16 | Volatile | 2.7V~3.6V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71024S15Y | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71024 | 32-SOJ | 15ns | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B256M64D2TP-062 L XT ES:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | SDRAM - Mobile LPDDR4 | 16Gb 256M x 64 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4011MA-150 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 28-DIP Module (0.61, 15.49mm) | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 28-DIP Module (18.42x37.72) | 150ns | 256Kb 32K x 8 | Non-Volatile | 4.75V~5.5V | NVSRAM | Parallel | 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F1G08ABCHC:C | Micron Technology Inc. | 4.5265 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | Obsolete | 3 (168 Hours) | 63 | 1.8V | 13mm | ROHS3 Compliant | No | 63 | 63-VFBGA | 1 Gb | Surface Mount | 0°C~70°C TA | FLASH - NAND | 1mm | 1 | 20mA | e1 | TIN SILVER COPPER | BOTTOM | 1.8V | MT29F1G08 | 63 | 0.8mm | 1.65V | 1.95V | 30 ns | 1Gb 128M x 8 | Non-Volatile | 28b | 1.7V~1.95V | 128MX8 | 8 | Asynchronous | 8b | 2kB | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67603S133PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 133MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.26mA | 256KX36 | 36 | 9437184 bit | 0.05A | 4.2 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL256SAGBHVC00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | FL-S | Active | 3 (168 Hours) | 24 | 3A991.B.1.A | 8mm | ROHS3 Compliant | 24 | ALSO CONFIGURABLE AS 128M X 1 | 24-TBGA | SPI, Serial | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.1mA | 2.7V~3.6V | 64MX4 | 4 | 268435456 bit | 133MHz | 0.0003A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 500ms | 3V | SPI | FLASH | SPI - Quad I/O | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY14B101L-SZ45XCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | Obsolete | 3 (168 Hours) | 32 | EAR99 | 20.726mm | ROHS3 Compliant | 32-SOIC (0.295, 7.50mm Width) | unknown | 7.5057mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.54mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 20 | CY14B101 | 32 | YES | 1.27mm | R-PDSO-G32 | 2.7V | SRAMs | Not Qualified | 3/3.3V | 3.6V | 1Mb 128K x 8 | Non-Volatile | 0.05mA | 2.7V~3.6V | 128KX8 | 8 | 1048576 bit | 0.003A | 45 ns | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EDFB164A1PB-JD-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | RoHS Compliant | FBGA | -30°C~85°C TA | SDRAM - Mobile LPDDR3 | 32Gb 512M x 64 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CB021-80075 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT46H64M16LFBF-5 AAT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | 2015 | Obsolete | 60 | EAR99 | 1 | 9mm | RoHS Compliant | AUTO/SELF REFRESH | 60-VFBGA | compliant | 8mm | Surface Mount | -40°C~105°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 8542.32.00.32 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.8V | 60 | YES | 0.8mm | R-PBGA-B60 | 1.7V | 1.8V | 1.95V | 3-STATE | 5ns | 1Gb 64M x 16 | Volatile | 0.135mA | 1.7V~1.95V | 64MX16 | 16 | 1073741824 bit | 200MHz | 0.000015A | COMMON | 8192 | DRAM | Parallel | 15ns | 24816 | 24816 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C32W-10SI-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C32 | 8-SOIC | 900ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT46H128M16LFB7-5 WT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1 | 10mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-VFBGA | 10mm | Surface Mount | -25°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 8542.32.00.36 | 1 | BOTTOM | 1.8V | MT46H128M16 | 60 | YES | 0.8mm | S-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.95V | 3-STATE | 5ns | 2Gb 128M x 16 | Volatile | 0.13mA | 1.7V~1.95V | 128MX16 | 16 | 2147483648 bit | 200MHz | 0.00001A | COMMON | 8192 | DRAM | Parallel | 15ns | 24816 | 24816 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62128BLL-70ZXET | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | MoBL® | Obsolete | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 32-TFSOP (0.724, 18.40mm Width) | Parallel | 5.5V | 4.5V | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | CY62128 | 32-TSOP I | 70ns | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W800DT70N6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W800 | 48-TSOP | 70ns | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
6116LA20TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2013 | no | Active | 1 (Unlimited) | 24 | 125°C | -55°C | 5V | 1 | 32.51mm | RoHS Compliant | Contains Lead | No | 24 | CDIP | Parallel | 5.5V | 4.5V | 16 kb | 7.62mm | 3.56mm | CMOS | 5.08mm | 1 | 120mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 24 | MILITARY | 2.54mm | SRAMs | 5V | 3-STATE | 20 ns | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 11b | 2KX8 | Asynchronous | 0.0003A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
93AA86CT-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 16 kb | 3.91mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 93AA86C | 8 | 1.27mm | 2/5V | 5.5V | 100 ns | 16Kb 2K x 8 1K x 16 | Non-Volatile | 1.8V~5.5V | 1KX16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3389S5BC | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | Parallel | 3.45V | 3.15V | 1.1 Mb | 100MHz | 17mm | 1.4mm | CMOS | 1 | 360mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 5 ns | 128kB | RAM, SDR, SRAM | 32b | 64KX18 | Synchronous | 0.015A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1414KV18-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 730mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 20 | CY7C1414 | 165 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 36Mb 1M x 36 | Volatile | 19b | 1.7V~1.9V | 1MX36 | 36 | Synchronous | 250MHz | 36b | SEPARATE | 1.7V | SRAM | Parallel |
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