Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Refresh Cycles | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Mixed Memory Type | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "S99AL008D") |
S99AL008D | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LH5116-10 | Sharp Microelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1997 | Obsolete | 1 (Unlimited) | 70°C | 0°C | 5V | 1 | Non-RoHS Compliant | 24 | 24-DIP (0.600, 15.24mm) | Parallel | 5.5V | 4.5V | 16 kb | 100GHz | Through Hole | 0°C~70°C TA | SRAM | 40mA | 24-DIP | 100ns | 16Kb 2K x 8 | Volatile | 11b | 4.5V~5.5V | Asynchronous | 8b | SRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NVG1S3ETAI0 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2012 | Discontinued | 48 | 3A991.B.1.A | 85°C | -40°C | 3.3V | 18.4mm | RoHS Compliant | No | 48 | TFSOP | Parallel, Serial | 3.6V | 2.7V | 2 Gb | 1mm | 12.4mm | CMOS | 8542.32.00.51 | 1 | 30mA | DUAL | GULL WING | 3.3V | 48 | INDUSTRIAL | 0.5mm | Flash Memories | 25 ns | 2GB | EEPROM, NAND, SLC NAND | 1b | 256MX8 | Synchronous | 0.00005A | 8b | NO | NO | 2K | 2.1kB | YES | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PCA24S08D,118 | NXP USA Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 8542.32.00.51 | 1 | e4 | NICKEL PALLADIUM GOLD | DUAL | 260 | 40 | PCA24S08 | 8 | YES | 1.27mm | R-PDSO-G8 | 2.5V | Not Qualified | 3/3.3V | 3.6V | 8Kb 1K x 8 | Non-Volatile | 0.001mA | 2.5V~3.6V | 1KX8 | 8 | 8192 bit | SERIAL | 400kHz | 0.000015A | 10 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | I2C | 10101MMR | EEPROM | I2C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24C02C-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 400μm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | I2C, Serial | 2 kb | 195μm | 280μm | Through Hole | -40°C~125°C TA | CMOS | 1 | 3mA | e3 | DUAL | 5V | 24C02C | 8 | 2.54mm | 5V | 3500ns | 2Kb 256 x 8 | Non-Volatile | 4.5V~5.5V | 100kHz | 0.00005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 1.5ms | I2C | 1010DDDR | EEPROM | I2C | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D1024M32D4DT-053 AIT ES:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-VFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 32Gb 1G x 32 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS28EC20Q+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 6 | 1 | 3mm | ROHS3 Compliant | 6-WDFN Exposed Pad | 3mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 0.8mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | DS28EC20 | YES | 0.95mm | S-XDSO-N6 | 4V | 5.25V | 20Kb 256 x 80 | Non-Volatile | 0.0009mA | 20KX1 | 1 | 20480 bit | SERIAL | 40 | 200000 Write/Erase Cycles | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7027L15PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7027 | 512Kb 32K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F64G08CBCGBWP-B:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24LC64-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.271mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | I2C, Serial | 64 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 5.334mm | 1 | 3mA | e3 | DUAL | 5V | 24LC64 | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX63U2GC1GCAXMI01 | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 162 | 10.5mm | IT ALSO CONTAINS 1GBIT(32M X 32) DDR2 MEMORY OPERATES AT 1.8V AND 1.2V NOM SUPPLY | 8mm | CMOS | SYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 1.8V | INDUSTRIAL | YES | 0.5mm | R-PBGA-B162 | 1.7V | 85°C | -40°C | 1.95V | 256MX8 | 8 | 2147483648 bit | MEMORY CIRCUIT | FLASH+DDR2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM662GXB-BDST | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V64M8P-5B:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 4 (72 Hours) | ROHS3 Compliant | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM - DDR | MT46V64M8 | 700ps | 512Mb 64M x 8 | Volatile | 2.5V~2.7V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W631GU6KB12J | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~105°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 1Gb 64M x 16 | Volatile | 1.283V~1.45V | 64MX16 | 16 | 1073741824 bit | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F004B3VG-8 T | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2002 | Obsolete | 1 (Unlimited) | 40 | EAR99 | 18.4mm | Non-RoHS Compliant | TOP BOOT BLOCK | 40-TFSOP (0.724, 18.40mm Width) | not_compliant | 10mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 235 | 3.3V | 30 | MT28F004B3 | 40 | YES | 0.5mm | R-PDSO-G40 | 3V | Not Qualified | 3.3V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.03mA | 3V~3.6V | 512KX8 | 8 | 4194304 bit | 0.000005A | 80 ns | 100000 Write/Erase Cycles | 3V | NO | NO | YES | 1213 | FLASH | Parallel | 80ns | 16K8K96K128K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16100C1-7BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 2 (1 Year) | 60 | EAR99 | 1 | 10.1mm | RoHS Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 60 | YES | 0.65mm | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.5ns | 16Mb 1M x 16 | Volatile | 0.14mA | 3V~3.6V | 1MX16 | 16 | 16b | 143MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F256G08EBHAFB16A3WSA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NVG3S0HTAI0 | Kioxia America, Inc. | 9.7581 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | 1GX8 | 8 | 8589934592 bit | 3V | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
LE25U81AFDTWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 2.5V | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 8 Mb | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | e3 | Tin (Sn) | DUAL | 2.5V | 8 | YES | 1.27mm | 2.3V | 2.7V | 8Mb 1M x 8 | Non-Volatile | 20b | 2.3V~2.7V | 8 | 40MHz | 2.7V | 256B | FLASH | SPI | 500μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S183PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 100-TQFP | 3.3ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 183MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS29GL064-70TLET | ISSI, Integrated Silicon Solution Inc | 3.6415 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~105°C TA | FLASH - NOR | 70ns | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 3V | FLASH | Parallel | 75ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM662PXC-ACS | Silicon Motion, Inc. | 36.5925 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 169-BGA | Surface Mount | -25°C~85°C | FLASH - NAND (MLC) | 64GB | Non-Volatile | FLASH | eMMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q64CWIGR | GigaDevice Semiconductor (HK) Limited | 2.4407 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024S55JI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT7024 | 64Kb 4K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EM6AA160TSE-4G | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 700ps | 256Mb 16M x 16 | Volatile | 2.3V~2.7V | 250MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS2704RQC+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W25Q64FVSSJF TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | SpiFlash® | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~105°C TA | FLASH - NOR | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O, QPI | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SM28VLT32SHKN | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Bulk | 14 | 3A001.A.2.A | 210°C | -55°C | 3.3V | 20mm | RoHS Compliant | Contains Lead | No | 14 | SPI, Serial | 3.6V | 3V | 32 Mb | 12MHz | 3.05mm | 8mm | 2.05mm | CMOS | 8542.32.00.71 | 1 | DUAL | GULL WING | 1.9V | MILITARY | 1.02mm | FLASH | 21b | 0.16mA | 2MX16 | Synchronous | 16b | 1000 Write/Erase Cycles | HARDWARE | 1.8V | YES | YES | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43DR81280B-3DBI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Last Time Buy | 3 (168 Hours) | 60 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 450ps | 1Gb 128M x 8 | Volatile | 0.27mA | 1.7V~1.9V | 128MX8 | 8 | 1073741824 bit | 333MHz | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F002N-70VI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.488, 12.40mm Width) | Surface Mount | -40°C~85°C TC | AT49F002 | 70ns | 2Mb 256K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs |
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TC58NVG1S3ETAI0 Toshiba
Surface Mount 48 Pin Memory IC 2 Gb kb 18.4mm mm 30mA mA 8b b
Price: 0.0000
RFQ -
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24C02C-E/P Microchip Technology
5V V Through Hole 8 Pin Memory IC 24C02C 2 kb kb 400μm mm 3mA mA
Price: 0.0000
RFQ -
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24LC64-E/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 24LC64 64 kb kb 9.271mm mm 3mA mA
Price: 0.0000
RFQ -
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MT28F004B3VG-8 T Micron Technology Inc.
3.3V V 40 Pin Memory IC MT28F004B3 18.4mm mm
Price: 0.0000
RFQ -
IS42S16100C1-7BL ISSI, Integrated Silicon Solution Inc
3.3V V 60 Pin Memory IC 10.1mm mm
Price: 0.0000
RFQ -
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SM662PXC-ACS Silicon Motion, Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 36.5925
RFQ -
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IS43DR81280B-3DBI ISSI, Integrated Silicon Solution Inc
1.8V V Memory IC 10.5mm mm
Price: 0.0000
RFQ -
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