Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS7C34096A-15TINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2001 | yes | Active | 3 (168 Hours) | 44 | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 3.3V | 40 | 44 | YES | 0.8mm | R-PDSO-G44 | 3V | 3.6V | 4Mb 512K x 8 | Volatile | 3V~3.6V | 512KX8 | 8 | 4194304 bit | 15 ns | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC48F4400P0VB0EH | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Axcell™ | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 64 | 64-LBGA | Parallel | Surface Mount | -40°C~85°C TC | FLASH - NOR | 48F4400P0 | 64-EasyBGA (10x13) | 100ns | 512Mb 32M x 16 | Non-Volatile | 1.7V~2V | 52MHz | FLASH | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA01/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.9695mm | ROHS3 Compliant | Lead Free | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | I2C, Serial | 1 kb | 7.62mm | Through Hole | 0°C~70°C TA | CMOS | 4.064mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 3V | 24AA01 | 8 | 2.54mm | 2/5V | 5.5V | OPEN-DRAIN | 3500ns | 1Kb 128 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.00003A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 10ms | I2C | 1010XXXR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA56T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | 2 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 3V | 40 | 93AA56 | 8 | 1.27mm | 2/5V | 5.5V | 3-STATE | 6 ms | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 16 | 2MHz | 0.00003A | 8 | 200 | 10000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q80JVSSIQ | Winbond Electronics | 0.3388 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tube | 2013 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 2.7V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 1MX8 | 8 | 8388608 bit | SERIAL | 133MHz | 3V | FLASH | SPI | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53E128M16D1DS-046 AAT:A") |
MT53E128M16D1DS-046 AAT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48H4M16LFB4-8 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2004 | Obsolete | 2 (1 Year) | 54 | EAR99 | 1.8V | 1 | 8mm | ROHS3 Compliant | Lead Free | 54 | AUTO/SELF REFRESH | 54-VFBGA | 64 Mb | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | 1 | 50mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT48H4M16 | 54 | YES | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 6ns | 64Mb 4M x 16 | Volatile | 14b | 1.7V~1.9V | 4MX16 | 16 | 125MHz | 0.00001A | COMMON | 4096 | DRAM | Parallel | 15ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FT24C64A-UTG-B | Fremont Micro Devices Ltd | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tube | 2010 | Discontinued | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 1MHz | Surface Mount | -40°C~85°C | EEPROM | 8-TSSOP | 700ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 800kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62146GE30-45ZSXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | MoBL® | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C351232-10BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 90 | 13mm | RoHS Compliant | 90-TFBGA | compliant | 8mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 2.7V | 3.6V | 16Mb 512K x 32 | Volatile | 3V~3.6V | 512KX32 | 32 | 16777216 bit | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F8G08MADWC:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2009 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F8G08 | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL129P0XNFI000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | 2013 | FL-P | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | ROHS3 Compliant | 8 | 8-WDFN Exposed Pad | SPI, Serial | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1 | 38mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 1.27mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 1.5 ms | 128Mb 16M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 1 | Synchronous | 8b | 104MHz | 0.00001A | 1b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 50ms | 3V | 256B | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F4G08ABBDAH4-IT:D TR | Micron Technology Inc. | 4.0983 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | 2013 | Active | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | MT29F4G08 | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 4Gb 512M x 8 | Non-Volatile | 1.7V~1.95V | 512MX8 | 8 | 4294967296 bit | 1.8V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M29W640GSB70ZF6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2013 | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | No | 64 | 64-TBGA | Parallel | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W640 | 64-TBGA (10x13) | 70ns | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS43DR16640B-25EBLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | 84 | AUTO/SELF REFRESH | 84-TFBGA | 1 Gb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | 240mA | 400MHz | BOTTOM | 1.8V | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 450ps | 1Gb 64M x 16 | Volatile | 16b | 1.7V~1.9V | 64MX16 | 16 | 16b | 0.015A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S16800B-7TLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 2 (1 Year) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | No | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 128 Mb | Surface Mount | -40°C~85°C TA | SDRAM | 1.2mm | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 54 | 0.8mm | 3V | 3.6V | 3-STATE | 5.4ns | 128Mb 8M x 16 | Volatile | 14b | 3V~3.6V | 8MX16 | 16 | 16b | 143MHz | 0.001A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC04BHT-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Gold | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 4 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 40 | 24LC04BH | 8 | 0.65mm | Not Qualified | OPEN-DRAIN | 900ns | ISO/TS-16949 | 4Kb 256 x 8 x 2 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | YES | 16words | I2C | 1010XXMR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416L10Y | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V416 | 44-SOJ | 10ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1220AB-100+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 33.02mm | ROHS3 Compliant | Lead Free | 24 | 24-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.668mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1220A | 24 | NO | 2.54mm | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 16Kb 2K x 8 | Non-Volatile | 0.075mA | 4.75V~5.25V | 2KX8 | 8 | 16384 bit | 0.01A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24CM02-SSHD-B | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 1997 | yes | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | Gold | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1 | 1.7mA | e4 | DUAL | 260 | 3V | 40 | AT24CM02 | 1.27mm | 2.5V | 5.5V | 125°C | 450ns | 2Mb 256K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 2097152 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7164L70DB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | 28-CDIP (0.600, 15.24mm) | Through Hole | -55°C~125°C TA | SRAM - Asynchronous | 7164L70 | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134SA55P | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2013 | Discontinued | 70°C | 0°C | 5V | 2 | 61.7mm | RoHS Compliant | Contains Lead | No | 48 | PDIP | Parallel | 5.5V | 4.5V | 32 kb | 15.24mm | 3.8mm | 240mA | 55 ns | 4kB | RAM, SDR, SRAM | 24b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557S75BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | not_compliant | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.275mA | 128KX36 | 36 | 4718592 bit | 100MHz | 0.04A | 7.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA12BF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 48-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V016 | 48-CABGA (7x7) | 12ns | 1Mb 64K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
5962-9459903MXA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2016 | Obsolete | 1 (Unlimited) | 28 | 3A001.A.2.C | 5V | 35.56mm | ROHS3 Compliant | No | 28 | EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 28-CDIP (0.300, 7.62mm) | 64 kb | Through Hole | -55°C~125°C TA | NVSRAM (Non-Volatile SRAM) | 4.14mm | 8542.32.00.41 | 1 | 85mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 5V | 28 | 2.54mm | SRAMs | Qualified | 5V | MIL-STD-883 | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.004A | 35 ns | 8b | NVSRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NAND256W3A0BN6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2012 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 256 Mb | Surface Mount | -40°C~85°C TA | 3V | FLASH - NAND | 1.2mm | 8542.32.00.51 | 1 | 20mA | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | 48 | 0.5mm | 3V | 256Mb 32M x 8 | Non-Volatile | 25b | 2.7V~3.6V | 32MX8 | 8 | Asynchronous | 0.00005A | 35 ns | 8b | NO | NO | YES | 2K | 512words | YES | FLASH | Parallel | 50ns | 16K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS2227-120 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 1 (Unlimited) | 72 | 3A991.B.2.A | Non-RoHS Compliant | Contains Lead | 72 | DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32 | 72-SIMM | not_compliant | 120GHz | Socket | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8542.32.00.41 | 1 | e0 | TIN LEAD | SINGLE | 240 | 5V | NOT SPECIFIED | DS2227 | 72 | NO | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 4Mb 128K x 32 256K x 16 512K x 8 | Non-Volatile | 0.28mA | 4.5V~5.5V | 512KX8 | 8 | 4194304 bit | 0.28A | 120 ns | NVSRAM | Parallel | 120ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25LQ080-JKLE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Discontinued | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | 8 | 8-WDFN Exposed Pad | SPI, Serial | 8 Mb | Surface Mount | 10.886217mg | -40°C~105°C TA | FLASH - NOR | 15mA | 1 | 12mA | DUAL | YES | 1.27mm | 2.3V | Not Qualified | 2.5/3.3V | 3.6V | 8 ns | 8Mb 1M x 8 | Non-Volatile | 20b | 2.3V~3.6V | 1 | Synchronous | 8b | 104MHz | 0.00003A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | SPI | FLASH | SPI - Quad I/O | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F64G08CFACBWP-12Z:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tube | 2016 | Obsolete | 3 (168 Hours) | 48 | 3.3V | 18.4mm | ROHS3 Compliant | 48 | 48-TFSOP (0.724, 18.40mm Width) | 64 Gb | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NAND | SYNCHRONOUS/ASYNCHRONOUS | 1.2mm | 1 | DUAL | 260 | 3.3V | 30 | 0.5mm | 2.7V | 3.6V | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 8GX8 | 8 | 83MHz | 8b | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W25Q64CVTBIG | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | SpiFlash® | Obsolete | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-TBGA | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 3V | YES | 1mm | R-PBGA-B24 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 64MX1 | 1 | 67108864 bit | SERIAL | 80MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O | 50μs, 3ms |
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