Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Page Size | Serial Bus Type | I2C Control Byte | Reverse Pinout | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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70T3339S200BCG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70T3339 | 256-CABGA (17x17) | 3.4ns | 9Mb 512K x 18 | Volatile | 2.4V~2.6V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC04BH-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 4 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 40 | 24LC04BH | 8 | 0.65mm | OPEN-DRAIN | 900ns | ISO/TS-16949 | 4Kb 256 x 8 x 2 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | YES | 16words | I2C | 1010XXMR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||
 |
RMLV1616AGSA-5S2#AA0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tray | yes | Active | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | 3V | 48 | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 16Mb 2M x 8 1M x 16 | Volatile | 2.7V~3.6V | 1MX16 | 16 | 16777216 bit | 55 ns | 8 | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
93LC76BT-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 8 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 93LC76B | 8 | 0.65mm | 2.5V | 5.5V | 8Kb 512 x 16 | Non-Volatile | 2.5V~5.5V | 512X16 | 16 | 3MHz | 8 | 5ms | MICROWIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C32M16MD1-6BCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2014 | Obsolete | 3 (168 Hours) | 60 | EAR99 | 1 | 10mm | RoHS Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | -25°C~85°C TJ | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 8542.32.00.28 | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B60 | 1.7V | 1.9V | 700ps | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LD32640B-25BPLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 168 | EAR99 | 1 | 12mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 168-VFBGA | 12mm | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 0.95mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.5mm | S-PBGA-B168 | 1.14V | 1.3V | 2Gb 64M x 32 | Volatile | 1.14V~1.95V | 64MX32 | 32 | 2147483648 bit | 400MHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM93CS56LN | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | FM93CS56 | 2Kb 128 x 16 | Non-Volatile | 2.7V~5.5V | 1MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MR4A08BCMA35 | Everspin Technologies Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tray | 2015 | yes | Active | 5 (48 Hours) | 48 | EAR99 | 3.3V | 10mm | ROHS3 Compliant | No | 48 | 48-LFBGA | 16 Mb | 10mm | Surface Mount | -40°C~85°C TA | MRAM (Magnetoresistive RAM) | 1.35mm | 8542.32.00.71 | 1 | 180mA | BOTTOM | 3.3V | 48 | 0.75mm | 3V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 3V~3.6V | 2MX8 | 8 | 0.014A | 35 ns | 8b | RAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
LE25S20FD-AH | ON Semiconductor | 3.2334 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | ACTIVE (Last Updated: 1 day ago) | Cut Tape (CT) | 2012 | yes | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | No SVHC | 8 b | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | e3 | Tin (Sn) | DUAL | 1.8V | YES | 1.27mm | 1.65V | Not Qualified | 1.95V | 2Mb 256K x 8 | Non-Volatile | 0.015mA | 1.65V~1.95V | 8 | 40MHz | 0.00001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | SPI | FLASH | SPI | 3.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS6C1008-55PIN | Alliance Memory, Inc. | 3.3785 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tube | 2006 | yes | Active | 1 (Unlimited) | 32 | EAR99 | 3V | 1 | ROHS3 Compliant | No | 32 | 32-DIP (0.600, 15.24mm) | 1 Mb | Through Hole | -40°C~85°C TA | SRAM - Asynchronous | 3.937mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 3V | 32 | NO | 2.54mm | 2.7V | 5.5V | 1Mb 128K x 8 | Volatile | 17b | 2.7V~5.5V | 8 | 55 ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1372D-167AXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | 2004 | NoBL™ | yes | Obsolete | 3 (168 Hours) | 100 | 3.3V | 2 | ROHS3 Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 18 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 275mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | 260 | 3.3V | 20 | CY7C1372 | 0.65mm | 3.135V | 3.6V | 3-STATE | 3.4ns | 18Mb 1M x 18 | Volatile | 20b | 3.135V~3.6V | 1MX18 | 18 | Synchronous | 167MHz | 0.07A | 18b | COMMON | 3.14V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||
.png "70V05S25J") |
70V05S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2006 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 3.3V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 3.6V | 3V | 64 kb | 24mm | 3.63mm | CMOS | 1 | 190mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 68 | COMMERCIAL | SRAMs | 3-STATE | 25 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | Asynchronous | 0.005A | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||
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70V07S25J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V07 | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M34C02-WDW6T | STMicroelectronics | 4.0643 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.4mm | Non-RoHS Compliant | Contains Lead | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | e0 | TIN LEAD | DUAL | 5V | M34C02 | 8 | YES | 0.65mm | 2.5V | 3/5V | 5.5V | OPEN-DRAIN | 900ns | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 8 | 400kHz | 5e-7A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 10ms | I2C | 1010DDDR | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC64GAPALHT-AIT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M95640-WDW6TG | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | 8 | 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | M95640 | 8 | YES | 0.65mm | Not Qualified | 40 ns | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 2.5V~5.5V | 8 | 65536 bit | 20MHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | 2.7V | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
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BR93L66-W | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Tube | 2005 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.3mm | ROHS3 Compliant | Lead Free | Copper, Tin | No | 8-DIP (0.300, 7.62mm) | Serial | 4 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | 3.7mm | 8542.32.00.51 | 1 | e3/e2 | TIN/TIN COPPER | DUAL | 260 | 2.5V | 10 | BR93L66 | 8 | 2.54mm | R-PDIP-T8 | 1.8V | 2/5V | 5.5V | 200 ns | 4Kb 256 x 16 | Non-Volatile | 0.0045mA | 1.8V~5.5V | 256X16 | 16 | 2MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G76FV-3AGTE2 | ROHM Semiconductor | 0.5557 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | 8Kb 512 x 16 | Non-Volatile | 1.7V~5.5V | 3MHz | 3-WIRE | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT29C010A-70TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1996 | Obsolete | 3 (168 Hours) | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT29C010 | 70ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93A66RFVT-WME2 | ROHM Semiconductor | 0.6773 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G8 | 2.5V | Not Qualified | 3/5V | 5.5V | 4Kb 256 x 16 | Non-Volatile | 0.0045mA | 2.5V~5.5V | 256X16 | 16 | 4096 bit | SERIAL | 2MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NM27C010N120 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 3 (168 Hours) | 32 | EAR99 | 41.912mm | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | 15.24mm | Through Hole | 0°C~70°C TA | EPROM - OTP | ASYNCHRONOUS | 5.334mm | 8542.32.00.71 | 1 | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 32 | NO | 2.54mm | R-PDIP-T32 | 4.5V | Not Qualified | 5.5V | 120ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 1048576 bit | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB081B-CNI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 8-VDFN | Surface Mount | -40°C~85°C TC | FLASH | AT45DB081 | 8-CASON (6x8) | 8Mb 264Bytes x 4096 pages | Non-Volatile | 2.7V~3.6V | 20MHz | FLASH | SPI | 14ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT7164S35YGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 17.9324mm | RoHS Compliant | 28 | Parallel | unknown | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 30 | 28 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.09mA | 8KX8 | 8 | 65536 bit | 0.015A | 35 ns | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1263XV18-600BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CY7C1263 | 165 | YES | 1mm | 1.7V | 1.9V | 50 ns | 36Mb 2M x 18 | Volatile | 19b | 1.7V~1.9V | 18 | 600MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV25616BLL-55TI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | no | Obsolete | 2 (1 Year) | 44 | 3.3V | 1 | Non-RoHS Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 15mA | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 2.8V | NOT SPECIFIED | 44 | 0.8mm | 2.5V | Not Qualified | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 2.5V~3.6V | 16 | Asynchronous | 55 ns | 16b | COMMON | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT47H32M16NF-25E AUT:H | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 84-TFBGA | Surface Mount | -40°C~125°C TC | SDRAM - DDR2 | 400ps | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST25VF020-20-4C-QAE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | SST25 | Active | 3 (168 Hours) | 8 | 3.3V | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 2 Mb | Surface Mount | 0°C~70°C TA | CMOS | 10mA | e3 | Matte Tin (Sn) - annealed | DUAL | SST25VF020 | 1.27mm | 23 ns | 2Mb 256K x 8 | Non-Volatile | 18b | 2.7V~3.6V | 8 | Synchronous | 8b | 20MHz | 0.000015A | 8b | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | SPI | FLASH | SPI | 20μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1513KV18-200BZXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 440mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CY7C1513 | 165 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 72Mb 4M x 18 | Volatile | 20b | 1.7V~1.9V | 4MX18 | 18 | Synchronous | 200MHz | 18b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MX69GL642EEXGI-70G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | Active | 56 | 9mm | RoHS Compliant | IT IS ALSO HAVING 2M X 16BIT PSRAM | 7mm | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.71 | 1 | BOTTOM | BALL | 260 | 3V | 40 | INDUSTRIAL | YES | 0.8mm | R-PBGA-B56 | 2.7V | 85°C | -40°C | 3.6V | 4MX16 | 16 | 67108864 bit | MEMORY CIRCUIT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C2270XV18-633BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 1 | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1 | 1.23A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CY7C2270 | 165 | 3-STATE | 450 ps | 36Mb 1M x 36 | Volatile | 19b | 1.7V~1.9V | 36 | Synchronous | 633MHz | 36b | COMMON | SRAM | Parallel |
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CY7C2270XV18-633BZXC Cypress Semiconductor Corp
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RFQ
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