Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DS1258Y-70IND# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | Obsolete | 1 (Unlimited) | 40 | 3A991.B.2.A | ROHS3 Compliant | 40 | 10 YEAR DATA RETENTION | 40-DIP Module (0.610, 15.495mm) | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1258Y | 40 | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 2Mb 128K x 16 | Non-Volatile | 0.17mA | 4.5V~5.5V | 128KX16 | 16 | 2097152 bit | 16b | 0.01A | 70 ns | NVSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVH8M8BLL-100B1LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-TBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 64Mb 8M x 8 | Volatile | 2.7V~3.6V | 8MX8 | 8 | 67108864 bit | 100MHz | 40 ns | PSRAM | Parallel | 40ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LPS51218A-200TQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 2 (1 Year) | 100 | 3.3V | 2 | ROHS3 Compliant | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 3.135V | 3.465V | 3-STATE | 3.1ns | 9Mb 512K x 18 | Volatile | 19b | 3.135V~3.465V | 18 | Synchronous | 200MHz | 0.105A | 18b | COMMON | 3.14V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1041G30-10ZSXAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | 2014 | yes | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT29F512G08CMCCBH7-6ITR:C TR") |
MT29F512G08CMCCBH7-6ITR:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 152-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P90FFCR12 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | 2003 | GL-P | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 3.3V | YES | 1mm | 3V | Not Qualified | 3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 0.11mA | 3V~3.6V | 256MX1 | 1 | 268435456 bit | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT38M4041A3034EZZI.XK6 TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-VFBGA | Surface Mount | -40°C~85°C TA | FLASH, PSRAM | 56-VFBGA | 256Mb 16M x 16 128M 8M x 16 | Non-Volatile | 1.7V~1.95V | 133MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LPS25636A-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 3.3V | 4 | ROHS3 Compliant | 100 | 100-LQFP | Parallel | 3.465V | 3.135V | 9 Mb | 200MHz | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 275mA | 200MHz | 100-TQFP (14x20) | 3.1ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.465V | Synchronous | 200MHz | 36b | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25U2033EZNI-12G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | MXSMIO™ | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | CAN BE ORGANISED AS 2 MBIT X 1 | 8-WDFN Exposed Pad | SPI, Serial | 5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | e3 | MATTE TIN (800) | DUAL | 260 | 1.8V | 40 | 8 | YES | 1.27mm | R-PDSO-N8 | 1.65V | Not Qualified | 1.8V | 2V | 2Mb 256K x 8 | Non-Volatile | 0.025mA | 1.65V~2V | 512MX4 | 4 | 2147483648 bit | 80MHz | 0.000008A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | FLASH | SPI | 30μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P72804S167BQGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2006 | 3 (168 Hours) | 165 | 85°C | -40°C | 1.8V | 2 | 15mm | RoHS Compliant | 165 | PIPELINED ARCHITECTURE | Parallel | 1.9V | 1.7V | 18 Mb | 167MHz | CMOS | 1 | 700mA | e1 | TIN SILVER COPPER | BOTTOM | BALL | 260 | 1.8V | 30 | 165 | INDUSTRIAL | 1mm | Not Qualified | 500 ps | QDR, RAM, SRAM | 19b | 1MX18 | 18 | Synchronous | 18b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT93C56AY1-10YI-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | EEPROM | AT93C56A | 8-MAP (3x4.9) | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 2MHz | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16400J-6TLI-TR | ISSI, Integrated Silicon Solution Inc | 1.6114 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | ROHS3 Compliant | No | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 64 Mb | Surface Mount | -40°C~85°C TA | SDRAM | 1.2mm | 1 | 100mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3.3V | 10 | 0.8mm | 3V | 3.6V | 3-STATE | 5.4ns | 64Mb 4M x 16 | Volatile | 14b | 3V~3.6V | 4MX16 | 16 | 16b | 166MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1460AV25-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | NoBL™ | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | Non-RoHS Compliant | Contains Lead | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.4mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 2.5V | NOT SPECIFIED | CY7C1460 | 165 | YES | 1mm | 2.375V | Not Qualified | 1.8/2.52.5V | 2.625V | 3-STATE | 2.6ns | 36Mb 1M x 36 | Volatile | 0.435mA | 2.375V~2.625V | 1MX36 | 36 | 37748736 bit | 250MHz | 0.12A | COMMON | 2.38V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16640BL-107MBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 1Gb 64M x 16 | Volatile | 1.283V~1.45V | 64MX16 | 16 | 1073741824 bit | 933MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA080T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 8 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 5mA | e3 | DUAL | 260 | 2.5V | 40 | 25AA080 | 8 | 1.27mm | 2/5V | 5.5V | 475 ns | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 1MHz | 0.000001A | 200 | 10000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FS256SDSBHI300 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2014 | FS-S | Active | 3 (168 Hours) | 24 | 1.8V | 8mm | ROHS3 Compliant | No | 24 | 24-TBGA | SPI, Serial | 256 Mb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 1.8V | YES | 1mm | 1.7V | 2V | 256Mb 32M x 8 | Non-Volatile | 1.7V~2V | 64MX4 | 4 | 80MHz | 2 | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV25616DBLL-45TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 44-TSOP II | 45ns | 4Mb 256K x 16 | Volatile | 2.5V~3.6V | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL512SDPBHB213 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | ITS ALSO CONFIGURABLE AS 512MX1 | 24-TBGA | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | SERIAL | 66MHz | 1 | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1245AB-85+ | Maxim Integrated | 31.4858 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 32 | 3A991.B.2.A | ROHS3 Compliant | 32-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1245AB | 32 | NO | 2.54mm | R-XDMA-T32 | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 1Mb 128K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 128KX8 | 8 | 1048576 bit | 0.0006A | 85 ns | NVSRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F320J3FS-11 MET TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 64-FBGA | Surface Mount | -40°C~85°C TA | FLASH | MT28F320J3 | 64-FBGA (10x13) | 110ns | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24FC1025T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 200 YEARS DATA RETENTION | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 1 Mb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | DUAL | 260 | 2.5V | 40 | 24FC1025 | 8 | 1.27mm | 2/5V | 5.5V | 400ns | 1Mb 128K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 1MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C1021CV33-15ZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 1996 | Obsolete | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | Lead Free | 44 | 44-TSOP (0.400, 10.16mm Width) | unknown | 1 Mb | 15GHz | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 80mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3.3V | 20 | CY7C1021 | 44 | 0.8mm | 2.97V | Not Qualified | 3.63V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 3V~3.6V | 16 | Asynchronous | 0.005A | 16b | COMMON | 3V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256-12PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | AT28HC256 | 120ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM25CL64B-DGTR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | F-RAM™ | Active | 3 (168 Hours) | 8 | EAR99 | 3V | 4.5mm | ROHS3 Compliant | Lead Free | 8 | 8-WDFN Exposed Pad | SPI, Serial | 64 kb | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 1 | 3mA | e3 | Tin (Sn) | DUAL | 260 | 3.3V | 30 | FM25CL64 | 8 | 0.95mm | 2.7V | SRAMs | Not Qualified | 3.65V | 20 ns | 64Kb 8K x 8 | Non-Volatile | 2.7V~3.6V | 8 | 8b | 20MHz | 0.000006A | 8b | FRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS42S83200B-7TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 1 | 22.22mm | RoHS Compliant | Lead Free | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 120mA | 1.2mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 54 | YES | 0.8mm | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | 256Mb 32M x 8 | Volatile | 3V~3.6V | 32MX8 | 8 | 8b | 143MHz | 0.001A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85RC16PNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 8-SOP | 550ns | 16Kb 2K x 8 | Non-Volatile | 2.7V~3.6V | 1MHz | FRAM | I2C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LCS21A/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 1 kb | 3.91mm | Surface Mount | 0°C~70°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 24LCS21A | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 900ns | 1Kb 128 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.00003A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 10ms | I2C | 1010000R | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||
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R1LV0108ESN-5SI#S1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 32-SOIC (0.450, 11.40mm Width) | Surface Mount | -40°C~85°C TA | 32 | 1Mb 128K x 8 | Volatile | 2.7V~3.6V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E384M32D2DS-046 AIT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 12Gb 384M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V07L35PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 80-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V07 | 80-TQFP | 35ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 35ns |
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