Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AT28C64X-20SC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TC | EEPROM | AT28C64 | 28-SOIC | 200ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71421LA25JI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 85°C | -40°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.004A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR24T08FJ-WE2 | ROHM Semiconductor | 0.2089 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | Lead Free | Copper, Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 8 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | e3 | Matte Tin (Sn) | DUAL | 225 | 2.5V | NOT SPECIFIED | BR24T08 | 1.27mm | 1.6V | Not Qualified | 5.5V | 900 ns | 8Kb 1K x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C2565KV18-400BZI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, QDR II+ | 165-FBGA (13x15) | 72Mb 2M x 36 | Volatile | 1.7V~1.9V | 400MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V256SA12PZGI | Integrated Device Technology (IDT) | 3.5005 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 3.3V | 1 | 8mm | RoHS Compliant | Lead Free | No | 28 | TSOP | Parallel | 3.6V | 3V | 256 kb | 11.8mm | 1mm | CMOS | 1 | 90mA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3.3V | 30 | 28 | INDUSTRIAL | 0.55mm | SRAMs | 3-STATE | 12 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | 32KX8 | Asynchronous | 0.002A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C16M16SA-7TCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2014 | Active | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | Lead Free | 54-TSOP (0.400, 10.16mm Width) | Parallel | 143MHz | Surface Mount | 0°C~70°C TA | SDRAM | 54-TSOP II | 5.4ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 143MHz | DRAM | Parallel | 14ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25Q20CTIGR | GigaDevice Semiconductor (HK) Limited | 0.4267 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2017 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25Q32CWIGR | GigaDevice Semiconductor (HK) Limited | 0.6498 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 32Mb 4M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25LQ64CVIGR | GigaDevice Semiconductor (HK) Limited | 1.4875 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 1.65V | 2V | 64Mb 8M x 8 | Non-Volatile | 1.65V~2V | 64MX1 | 1 | 67108864 bit | SERIAL | 120MHz | 1.8V | FLASH | SPI - Quad I/O | 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C25652KV18-550BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | 30 | CY7C25652 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 72Mb 2M x 36 | Volatile | 19b | 1.31mA | 1.7V~1.9V | 36 | Synchronous | 550MHz | 0.38A | 36b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3558SA200BQG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | yes | 3 (168 Hours) | 165 | 70°C | 0°C | RoHS Compliant | 165 | Parallel | unknown | 200MHz | CMOS | SYNCHRONOUS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | COMMERCIAL | YES | 1mm | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM | 0.4mA | 256KX18 | 18 | 4718592 bit | 0.04A | 3.2 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25320AY6-10YH-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-UFDFN Exposed Pad | Surface Mount | -40°C~85°C TA | EEPROM | AT25320 | 8-Mini Map (2x3) | 32Kb 4K x 8 | Non-Volatile | 1.8V~5.5V | 20MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS25WP032D-JKLE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | yes | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | 5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 1.65V | 1.95V | 32Mb 4M x 8 | Non-Volatile | 1.65V~1.95V | 4MX8 | 8 | 33554432 bit | SERIAL | 133MHz | 1 | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F64G08CBABBWP-12:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F64G08 | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC010AT-H/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 5.5V | 2.5V | 1 kb | 5MHz | Surface Mount | -40°C~150°C TA | EEPROM | 5mA | 5MHz | 25LC010A | 8-SOIC | 160 ns | 1Kb 128 x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR24T128F-WE2 | ROHM Semiconductor | 0.4589 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | Lead Free | Copper, Tin | 8 | 8-SOIC (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 128 kb | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | e3 | Matte Tin (Sn) | DUAL | 225 | 2.5V | NOT SPECIFIED | BR24T128 | 1.27mm | 1.6V | Not Qualified | 5.5V | 900 ns | 128Kb 16K x 8 | Non-Volatile | 0.0025mA | 1.6V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
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SST39WF1602-70-4I-MAQE | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tray | 2000 | SST39 MPF™ | Active | 2 (1 Year) | 48 | EAR99 | 1.8V | 6mm | ROHS3 Compliant | No | 48 | TOP BOOT-BLOCK | 48-WFBGA | 16 Mb | Surface Mount | -40°C~85°C TA | CMOS | 0.73mm | 8542.32.00.51 | 1 | 10mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 40 | SST39WF1602 | 48 | YES | 0.5mm | 1.65V | 1.95V | 70ns | 16Mb 1M x 16 | Non-Volatile | 20b | 1.65V~1.95V | 1MX16 | 16 | Asynchronous | 16b | 0.00004A | 16b | YES | YES | YES | 512 | YES | FLASH | Parallel | 40μs | 2K | TOP | ||||||||||||||||||||||||||||||||||||||||||||
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SST25VF020B-80-4C-Q3AE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SST25 | Active | 1 (Unlimited) | 8 | 3.3V | ROHS3 Compliant | 8 | 8-UFDFN Exposed Pad | SPI, Serial | 2 Mb | Surface Mount | 0°C~70°C TA | CMOS | 20mA | e3 | Matte Tin (Sn) - annealed | DUAL | SST25VF020B | 0.5mm | Not Qualified | 6 ns | 2Mb 256K x 8 | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | 8b | 80MHz | 0.00002A | 8b | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | SPI | FLASH | SPI | 10μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71321LA55TFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2008 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 10mm | RoHS Compliant | Lead Free | No | 64 | AUTOMATIC POWER DOWN | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 10mm | 1.4mm | CMOS | 1.6mm | 1 | 110mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 30 | 64 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V416YS10PHI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V416 | 44-TSOP II | 10ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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N25Q064A13EW94ME | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | Active | 3 (168 Hours) | ROHS3 Compliant | -40°C~85°C TA | FLASH - NOR | 64Mb 16M x 4 | Non-Volatile | 2.7V~3.6V | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V65903S85BQG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2005 | yes | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Lead Free | No | 165 | FLOW-THROUGH | Parallel | 9 Mb | 13mm | 1.2mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | COMMERCIAL | YES | 3.465V | RAM, SRAM | 19b | 8.5 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL064N90FAI022 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | GL-N | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 240 | 3V | 30 | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.05mA | 2.7V~3.6V | 4MX16 | 16 | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46H32M16LFBF-5 IT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2014 | Active | 3 (168 Hours) | 60 | EAR99 | 1 | 9mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-VFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1mm | 8542.32.00.28 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | MT46H32M16 | YES | 0.8mm | R-PBGA-B60 | 1.7V | 1.95V | 5ns | 512Mb 32M x 16 | Volatile | 1.7V~1.95V | 32MX16 | 16 | 536870912 bit | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S27KS0641DPBHA020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | Automotive, AEC-Q100, HyperRAM™ KS | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-VBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | SYNCHRONOUS | 1mm | 8542.32.00.71 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 1.7V | 1.95V | 40ns | 64Mb 8M x 8 | Volatile | 1.7V~1.95V | 8MX8 | 8 | 67108864 bit | 166MHz | PSRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT40A512M8SA-062E AUT:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 78-TFBGA | Surface Mount | -40°C~125°C TC | SDRAM - DDR4 | 19ns | 4Gb 512M x 8 | Volatile | 1.14V~1.26V | 1.6GHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62256LL-55ZXI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | MoBL® | yes | Obsolete | 3 (168 Hours) | 28 | 11.8mm | ROHS3 Compliant | 28-TSSOP (0.465, 11.80mm Width) | unknown | 8mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | e3/e4 | MATTE TIN/NICKEL PALLADIUM GOLD | DUAL | 260 | 5V | 20 | 28 | YES | 0.55mm | R-PDSO-G28 | 4.5V | COMMERCIAL | 5.5V | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 55 ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29W640GT70NA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 48 | TOP BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 64 Mb | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | M29W640 | 48 | YES | 0.5mm | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | 4MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | YES | YES | YES | 8127 | 4/8words | YES | YES | FLASH | Parallel | 70ns | 8K64K | TOP | |||||||||||||||||||||||||||||||||||||||||||||
| S25FS256SAGNFI003 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | 2016 | FS-S | Active | 3 (168 Hours) | 8 | 1.8V | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 256 Mb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1 | DUAL | 1.8V | YES | 1.27mm | 1.7V | 2V | 256Mb 32M x 8 | Non-Volatile | 1.7V~2V | 64MX4 | 4 | 133MHz | 2 | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V416L15BEI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2014 | no | Active | 4 (72 Hours) | 48 | 85°C | -40°C | 3.3V | 1 | 9mm | RoHS Compliant | Contains Lead | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | 160mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 15 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 16b | COMMON | 3V |
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