Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SST25VF080B-50-4I-QAF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2005 | SST25 | yes | Active | 3 (168 Hours) | 8 | EAR99 | 3.3V | 6mm | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | No SVHC | 8 b | 750μm | 5mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 3V | SST25VF080B | 8 | 1.27mm | 2.7V | 3.6V | 50 ns | 8Mb 1M x 8 | Non-Volatile | 1b | 0.03mA | 2.7V~3.6V | 8b | 50MHz | 0.00002A | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 10μs | |||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1470BV25-200BZXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tray | 2004 | NoBL™ | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 2.5V | 4 | 17mm | ROHS3 Compliant | Lead Free | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1 | 450mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 2.5V | 40 | CY7C1470 | 165 | 1mm | 2.375V | 2.625V | 3-STATE | 3ns | 72Mb 2M x 36 | Volatile | 21b | 2.375V~2.625V | 2MX36 | 36 | Synchronous | 200MHz | 36b | COMMON | 2.38V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67802S150PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.325mA | 512KX18 | 18 | 9437184 bit | 0.05A | 3.8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16400F-6TL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | No | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 64 Mb | Surface Mount | 0°C~70°C TA | SDRAM | 130mA | 1.2mm | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 54 | 0.8mm | 3V | 3.6V | 3-STATE | 5.4ns | 64Mb 4M x 16 | Volatile | 14b | 3V~3.6V | 4MX16 | 16 | 16b | 166MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NVG3S0HTAI0 | Kioxia America, Inc. | 9.7581 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | 1GX8 | 8 | 8589934592 bit | 3V | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32800B-6TLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 2 (1 Year) | 86 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 86 | 0.5mm | 3V | Not Qualified | 3.6V | 5.5ns | 256Mb 8M x 32 | Volatile | 14b | 3V~3.6V | 8MX32 | 32 | 32b | 166MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
BR25H160FJ-2CE2 | ROHM Semiconductor | 1.3136 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 8-SOIC (0.154, 3.90mm Width) | Unknown | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 1.27mm | 4.5V | Not Qualified | 3/5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 0.004mA | 2.5V~5.5V | 8 | SERIAL | 10MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 4ms | SPI | EEPROM | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
.png "IS43DR82560B-25EBL") |
IS43DR82560B-25EBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 13mm | ROHS3 Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | 2 Gb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.36 | 1 | 400MHz | BOTTOM | 1.8V | 60 | YES | 0.8mm | 1.7V | Not Qualified | 1.9V | 3-STATE | 400ps | 2Gb 256M x 8 | Volatile | 15b | 0.47mA | 1.7V~1.9V | 256MX8 | 8 | 0.03A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WP080D-JNLE-TR | ISSI, Integrated Silicon Solution Inc | 0.2353 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 1.65V | 1.95V | 8Mb 1M x 8 | Non-Volatile | 1.65V~1.95V | 1MX8 | 8 | 8388608 bit | SERIAL | 133MHz | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WP016D-JBLE | ISSI, Integrated Silicon Solution Inc | 0.7326 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 8542.32.00.51 | 1 | e3 | Tin (Sn) | DUAL | 260 | 1.8V | 10 | YES | 1.27mm | S-PDSO-G8 | 1.65V | 1.95V | 16Mb 2M x 8 | Non-Volatile | 1.65V~1.95V | 2MX8 | 8 | 16777216 bit | SERIAL | 133MHz | 1 | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS46DR16640B-25EBLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | Active | 3 (168 Hours) | 84 | 1.8V | 1 | 12.5mm | ROHS3 Compliant | 84 | AUTO/SELF REFRESH | 84-TFBGA | 1 Gb | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | 240mA | BOTTOM | 1.8V | 0.8mm | 1.7V | 1.9V | 400ps | 1Gb 64M x 16 | Volatile | 16b | 1.7V~1.9V | 64MX16 | 16 | 16b | 400MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58BYG3S0HBAI4 | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Benand™ | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 8Gb 1G x 8 | Non-Volatile | 1.7V~1.95V | 1GX8 | 8 | 8589934592 bit | 1.8V | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G04-3 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2005 | Obsolete | 1 (Unlimited) | 8 | 9.3mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 4.21mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | NO | 2.54mm | R-PDIP-T8 | 1.6V | Not Qualified | 1.8/5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 512X8 | 8 | 4096 bit | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | SPI | 1010DDMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7005L15PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7005 | 64-TQFP (14x14) | 15ns | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
25AA160A-I/WF15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | EEPROM | 25AA160A | Die | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16320F-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 54 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TFBGA | 8mm | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B54 | 3V | 3.6V | 5.4ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 32MX16 | 16 | 536870912 bit | 167MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLS96400A-25WBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | AUTO REFRESH | 144-TBGA | 11mm | Surface Mount | 0°C~70°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B144 | 1.7V | 1.9V | 20ns | 576Mb 64M x 9 | Volatile | 1.7V~1.9V | 64MX9 | 9 | 603979776 bit | 400MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BR93H56RFJ-2CE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.9mm | ROHS3 Compliant | 8 | SEATED HT-CALCULATED | 8-SOIC (0.154, 3.90mm Width) | Unknown | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.65mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 2Kb 128 x 16 | Non-Volatile | 0.003mA | 2.5V~5.5V | 16 | SERIAL | 2MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 4ms | MICROWIRE | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS45S16320D-7CTLA1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 143MHz | Surface Mount | -40°C~85°C TA | SDRAM | 143MHz | 54-TSOP II | 5.4ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 16b | 143MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS25LP128-JBLE | ISSI, Integrated Silicon Solution Inc | 1.9863 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Bulk | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 3V | ROHS3 Compliant | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 128 Mb | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | e3 | Tin (Sn) | DUAL | 3V | YES | 1.27mm | 3.6V | 3-STATE | 128Mb 16M x 8 | Non-Volatile | 24b | 0.014mA | 2.3V~3.6V | 1 | 133MHz | 0.000065A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | 4-WIRE | FLASH | SPI - Quad I/O, QPI | 1ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS63LV1024L-10TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | yes | Active | 2 (1 Year) | 32 | 3.3V | 1 | 20.95mm | ROHS3 Compliant | No | 32 | 32-SOIC (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 160mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3.3V | 40 | 32 | 3.45V | 1Mb 128K x 8 | Volatile | 17b | 3.15V~3.45V | 8 | Asynchronous | 8b | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7132LA20JG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | Active | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | 200mA | 20 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32160C-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 90 | RoHS Compliant | 90 | 90-LFBGA | Surface Mount | 0°C~70°C TA | SDRAM | BOTTOM | 3.3V | YES | 0.8mm | Not Qualified | 3.3V | 3-STATE | 5.4ns | 512Mb 16M x 32 | Volatile | 0.3mA | 3V~3.6V | 16MX32 | 32 | 536870912 bit | 32b | 166MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61WV51232BLL-10BLI | ISSI, Integrated Silicon Solution Inc | 19.4224 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | yes | Active | 2 (1 Year) | 90 | 3.3V | 1 | ROHS3 Compliant | No | 90 | 90-TFBGA | 16 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 90mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 90 | YES | 0.8mm | 2.4V | 3.6V | 16Mb 512K x 32 | Volatile | 19b | 1.65V~3.6V | 32 | Asynchronous | 32b | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
THGBMHT0C8LBAIG | Kioxia America, Inc. | 27.1211 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | 153-WFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND (MLC) | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | 200MHz | FLASH | eMMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TH58NVG2S3HTA00 | Kioxia America, Inc. | 1.7318 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND (SLC) | 48-TSOP I | 25ns | 4Gb 512M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S-93L76AD0I-J8T1G | ABLIC U.S.A. Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5.02mm | RoHS Compliant | 100 YEAR DATA RETENTION, ALSO OPERATES WITH 1.8 V TO 5.5 V AND 2.7 V TO 5.5 V SUPPLY | 8-SOIC (0.154, 3.90mm Width) | compliant | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 8542.32.00.51 | 1 | e6/e2 | TIN BISMUTH/TIN SILVER | DUAL | 260 | 5V | 10 | 8 | YES | 1.27mm | R-PDSO-G8 | 1.6V | Not Qualified | 5.5V | 8Kb 512 x 16 | Non-Volatile | 1.6V~5.5V | 512X16 | 16 | 8192 bit | SERIAL | 2MHz | 10ms | MICROWIRE | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58BVG0S3HBAI6 | Kioxia America, Inc. | 2.6940 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Benand™ | Active | 3 (168 Hours) | 67 | 8mm | RoHS Compliant | 67-VFBGA | 6.5mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 3.3V | YES | 0.8mm | R-PBGA-B67 | 2.7V | 3.6V | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 128MX8 | 8 | 1073741824 bit | 3.3V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TH58NVG5S0FTA20 | Kioxia America, Inc. | 31.6768 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND (SLC) | 48-TSOP I | 25ns | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns |
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