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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Mount | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | RoHS Status | Current Rating | Number of Pins | Package / Case | REACH SVHC | Mounting Type | Operating Temperature | Voltage - Rated DC | Terminal Position | Terminal Form | Pin Count | JESD-30 Code | Subcategory | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Case Connection | Polarity/Channel Type | Input | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
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CM1000DU-34NF | Mitsubishi | 555.2600 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2003 | IGBTMOD™ | no | Obsolete | 1 (Unlimited) | 7 | Non-RoHS Compliant | 1kA | 15 | Module | Unknown | Chassis Mount | -40°C~150°C TJ | 1.7kV | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | Insulated Gate BIP Transistors | 3.9kW | 3900W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 1kA | 1.7kV | 2.8V | POWER CONTROL | SILICON | 220nF | 1mA | 750 ns | 2.8V @ 15V, 1000A | 1100 ns | No | 20V | 220nF @ 10V | 1700V | 1000A |