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RF MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Frequency Height Width Mfr Weight Voltage - Rated DC Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Reference Standard Number of Elements Configuration Max Output Power Case Connection Current Rating (Amps) Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Supplier Device Package Power Dissipation-Max Number of Terminals Continuous Drain Current (ID) Transistor Application DS Breakdown Voltage-Min FET Technology Source Url Status Check Date Transistor Element Material Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Highest Frequency Band Noise Figure Power Gain-Min (Gp) Power - Output Power Dissipation Ambient-Max Power Gain Channel Type Mode of Operation
MWT-LN300 MWT-LN300 Microwave Technology 0.0000
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0.00000000 - 4 V Die 26GHz Microwave Technology Inc. 10dB - Die 25 mA pHEMT FET 2.5 V 0.6dB -
BF908R,235 BF908R,235 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 1996 Obsolete 1 (Unlimited) ROHS3 Compliant 12V SOT-143R 200MHz BF908 4 40mA 2013-06-14 00:00:00 15mA N-Channel Dual Gate 8V 0.6dB
NE3512S02-T1D-A NE3512S02-T1D-A RENESAS ELECTRONICS CORP 0.0000
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0.00000000 [object Object] yes EAR99 RoHS Compliant LOW NOISE compliant DEPLETION MODE e6 Tin/Bismuth (Sn/Bi) QUAD FLAT NOT SPECIFIED NOT SPECIFIED 4 YES R-PQMW-F4 125°C Other Transistors Not Qualified 1 SINGLE N-CHANNEL 0.165W 4 AMPLIFIER 3V HETERO-JUNCTION SILICON 0.015A KU B 12.5dB
BF1205,135 BF1205,135 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2003 Obsolete 1 (Unlimited) ROHS3 Compliant 10V 6-TSSOP, SC-88, SOT-363 unknown 800MHz BF1205 6 35dB 30mA 2013-06-14 00:00:00 12mA N-Channel Dual Gate 5V 1.2dB
QPD1025 QPD1025 Qorvo 0.0000
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CLF1G0035-100 CLF1G0035-100 Rochester Electronics 0.0000
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0.00000000 - 150 V SOT-467C 3.5GHz Rochester Electronics, LLC 12dB - SOT467C 330 mA HEMT 50 V - 100W
PD57006S PD57006S STMicroelectronics 0.0000
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0.00000000 download Surface Mount Tube no Obsolete 3 (168 Hours) 2 EAR99 150°C -65°C ROHS3 Compliant 1A 3 PowerSO-10 Exposed Bottom Pad not_compliant 945MHz ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) DUAL FLAT NOT SPECIFIED NOT SPECIFIED PD57006 2 R-PDSO-F2 FET General Purpose Power Not Qualified 15dB 20W 1 SOURCE N-CHANNEL Single 20W 1A AMPLIFIER METAL-OXIDE SEMICONDUCTOR 20V 65V 1A 65V 70mA LDMOS 28V 6W
MPF102 MPF102 ON Semiconductor 0.0000
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0.00000000 download OBSOLETE (Last Updated: 1 day ago) Through Hole Bulk no 3 155°C -55°C 4.58mm RoHS Compliant Lead Free 10mA 3 TO-92 4.58mm 3.86mm 201mg 25V DEPLETION MODE 8541.21.00.95 e0 Tin/Lead (Sn/Pb) BOTTOM 240 30 3 Other Transistors Not Qualified 1 N-CHANNEL Single 350mW 350mW 20mA AMPLIFIER JUNCTION -25V 25V 15V VERY HIGH FREQUENCY B
PTRA093302DCV1R2XTMA1 PTRA093302DCV1R2XTMA1 Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2016 Obsolete 1 (Unlimited)
MHT1006NT1 MHT1006NT1 NXP Semiconductors 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) 2014 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V PLD-1.5W 2.17GHz 8541.29.00.75 e3 Tin (Sn) 260 40 21.7dB 90mA LDMOS 28V 1.26W
BF245B_D27Z BF245B_D27Z ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) 30V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) BF245 15mA N-Channel JFET
MRF8S9100HR3 MRF8S9100HR3 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2010 Obsolete 3 (168 Hours) 2 5A991 ROHS3 Compliant 70V SOT-957A 920MHz ENHANCEMENT MODE 8541.29.00.75 DUAL FLAT NOT APPLICABLE NOT APPLICABLE MRF8S9100 YES R-CDFM-F2 225°C Not Qualified 19.3dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 70V METAL-OXIDE SEMICONDUCTOR SILICON 500mA LDMOS 28V 72W
MRF8S9200NR3 MRF8S9200NR3 NXP Semiconductors 0.0000
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0.00000000 download 10 Weeks Tape & Reel (TR) 2009 Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant 70V ESD PROTECTED OM-780-2 940MHz ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) DUAL FLAT 260 40 YES R-CDFP-F2 225°C FET General Purpose Power Not Qualified 19.9dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 70V METAL-OXIDE SEMICONDUCTOR SILICON 1.4A LDMOS 28V 58W
MRFE6VP61K25NR6 MRFE6VP61K25NR6 NXP Semiconductors 0.0000
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0.00000000 download 10 Weeks Tape & Reel (TR) 2009 Active 3 (168 Hours) EAR99 ROHS3 Compliant 133V OM-1230-4L 230MHz 8541.29.00.75 e3 Tin (Sn) 260 40 23dB 100mA LDMOS (Dual) 50V 1250W
FH2164 FH2164 MACOM Technology Solutions 0.0000
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0.00000000
MRF6S19100HSR5 MRF6S19100HSR5 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 3 (168 Hours) ROHS3 Compliant 68V NI-780S 1.99GHz MRF6S19100 16.1dB 900mA LDMOS 28V 22W
3SK255-T2-A 3SK255-T2-A Renesas Electronics America 0.0000
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0.00000000 * Renesas Electronics America Inc
CGHV35120F CGHV35120F Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 125V 440162 3.1GHz~3.5GHz 13dB 440162 220mA HEMT 48V 120W
MRF175GV MRF175GV MACOM Technology Solutions 0.0000
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0.00000000 - 65 V 375-04 225MHz MACOM Technology Solutions 14dB 26A 375-04, Style 2 100 mA 2 N-Channel (Dual) Common Source 28 V - 200W
2729GN-270 2729GN-270 Microsemi 0.0000
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0.00000000 EAR99 200°C -55°C RoHS Compliant 150V 5mA No 55 2.9GHz FET RF Small Signal 13.8 dB 2 N-CHANNEL 500mA 60V 304W 570W
MRF6S27085HSR5 MRF6S27085HSR5 Rochester Electronics 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant 68V NI-780S 2.66GHz 15.5dB NI-780S 900mA LDMOS 28V 20W
LET9045 LET9045 STMicroelectronics 0.0000
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0.00000000 Surface Mount Tray Obsolete 3 (168 Hours) 2 EAR99 165°C -65°C ROHS3 Compliant Lead Free 80V 9A No 4 HIGH RELIABILITY PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) 960MHz ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed DUAL GULL WING 250 LET9045 10 R-PDSO-G2 FET General Purpose Power 79W 1 SINGLE 59W SOURCE N-CHANNEL 79W 5A AMPLIFIER 80V METAL-OXIDE SEMICONDUCTOR 15V 9A 300mA LDMOS 28V 17.5dB
ARF469AG ARF469AG Microchip Technology 0.0000
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0.00000000
VEC2820-TL-E VEC2820-TL-E onsemi 0.0000
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0.00000000 * onsemi
MMRF1318NR1 MMRF1318NR1 NXP USA Inc. 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) 2013 Active 3 (168 Hours) EAR99 ROHS3 Compliant 110V TO-270-4 450MHz 8541.29.00.75 e3 Matte Tin (Sn) 260 40 22dB 900mA LDMOS 50V 300W
MRF19125R3 MRF19125R3 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) ROHS3 Compliant 65V NI-880 1.93GHz 13.5dB 1.3A LDMOS 26V 24W
475-102N20A-00 475-102N20A-00 IXYS-RF 0.0000
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0.00000000 download 10 Weeks Tube DE Obsolete 1 (Unlimited) 1000V 6-SMD, Flat Lead Exposed Pad 20A DE475 N-Channel 1800W
BLF888DU BLF888DU Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tray 2011 Not For New Designs 1 (Unlimited) 4 EAR99 ROHS3 Compliant 104V SOT539A unknown 860MHz ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-CDFM-F4 21dB IEC-60134 2 COMMON SOURCE, 2 ELEMENTS SOURCE N-CHANNEL AMPLIFIER 104V METAL-OXIDE SEMICONDUCTOR SILICON 1.3A LDMOS 50V 250W
BLF548,112 BLF548,112 NXP Semiconductors 0.0000
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0.00000000 download Obsolete Supplier Unconfirmed 5 Dual Common Source N CW Class-B
IXZH10N50L2A IXZH10N50L2A IXYS-RF 0.0000
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0.00000000 download 10 Weeks Tube Z-MOS™ Obsolete 1 (Unlimited) 500V TO-247-3 70MHz 17dB 10A TO-247 (IXFH) N-Channel 100V 200W
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