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STM32F103C8T6
MFI343S00177
STM32F407VET6
ATMEGA328P-PU

Categories
- Integrated Circuits (ICs)
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  - Integrated circuits, often referred to as ICs or microchips, are miniature electronic circuits that contain thousands to billions of transistors, resistors, capacitors, and other electronic components on a small semiconductor material. ICs are the building blocks of modern electronics and are used in a vast array of devices and systems, ranging from smartphones and computers to automotive electronics and medical devices. They provide compactness, high functionality, and improved performance by integrating multiple electronic functions onto a single chip.
- Connectors
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  - Connectors are devices used to establish electrical or mechanical connections between two or more components or systems. They provide a means for joining cables, wires, or other conductive elements, enabling the transmission of electrical signals, power, or data. Connectors come in a wide range of forms, including electrical connectors, coaxial connectors, modular connectors, and fiber optic connectors. They play a critical role in industries such as telecommunications, automotive, aerospace, and consumer electronics, facilitating reliable and secure connections.
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  - Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
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  - Capacitors are electronic components that store and release electrical energy. They consist of two conductive plates separated by an insulating material known as a dielectric. Capacitors are widely used in electronic circuits for various purposes, including energy storage, filtering, decoupling, timing, and coupling signals. They are available in different types, such as electrolytic capacitors, ceramic capacitors, and tantalum capacitors, each with unique characteristics suitable for different applications.
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  - Sensors are devices that detect and measure physical or environmental parameters and convert them into electrical signals. They enable the acquisition of real-world data for monitoring, control, and feedback purposes. Sensors can detect variables such as temperature, pressure, light, motion, proximity, and many others. They find application in diverse fields, including automotive systems, consumer electronics, industrial automation, healthcare, and environmental monitoring.
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  - Resistors are passive electronic components designed to impede the flow of electric current in a circuit. They are used to control current levels, divide voltage, and limit power dissipation. Resistors are available in various types, including fixed resistors, variable resistors (potentiometers), and specialized resistors for specific applications such as high power or precision requirements. They are fundamental components in electronic circuits, playing roles in voltage regulation, signal conditioning, and impedance matching.
- Isolators
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  - Isolators, also known as isolation devices or isolating components, are electronic components designed to electrically separate or isolate different parts of a circuit or system. They provide protection by preventing unwanted electrical currents, noise, or interference from affecting sensitive components or systems. Isolators are commonly used in applications where electrical isolation is crucial, such as power supplies, communication systems, motor control, and industrial automation. They ensure reliable operation, safety, and protection from electrical disturbances or faults.
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  - Box and enclosure products refer to electronic components that are designed to protect and house electronic devices. These products come in a variety of shapes and sizes, and are typically made from materials such as plastic, metal, or fiberglass. Box and enclosure products are essential for protecting electronic components from environmental factors such as dust, moisture, and temperature fluctuations. They also provide a secure and organized way to store and transport electronic devices. Box and enclosure products are commonly used in industries such as telecommunications, aerospace, and automotive, as well as in consumer electronics.
- RF/IF & RFID
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  - RF power dividers/splitters are electronic components that are used to divide or split an incoming RF signal into multiple output signals. These components are commonly used in communication systems, such as radio and television broadcasting, as well as in radar and satellite communication systems. RF power dividers/splitters are designed to maintain signal integrity and minimize signal loss, ensuring that each output signal is of equal strength and quality. They come in various configurations, including 2-way, 3-way, 4-way, and 8-way, and can be used in both indoor and outdoor applications. RF power dividers/splitters are essential components in any RF system that requires signal distribution.
- Circuit Protection
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  - Circuit protection is a crucial aspect of electronic components classification. It refers to the measures taken to prevent damage to electronic circuits due to overvoltage, overcurrent, or short circuits. Circuit protection devices such as fuses, circuit breakers, surge protectors, and voltage regulators are used to safeguard electronic components from damage caused by power surges, lightning strikes, and other electrical disturbances. These devices are designed to interrupt the flow of current when the voltage or current exceeds a safe level, thereby protecting the circuit and preventing damage to the electronic components. Circuit protection is essential for ensuring the reliability and longevity of electronic devices and systems.
- Crystals
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  - Oscillators
  - Pin Configurable Oscillators
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  - Crystals, in the context of electronics, refer to quartz crystals or other similar crystalline structures used as precise timing references or frequency-determining elements. These crystals exhibit a phenomenon called piezoelectricity, which allows them to generate a stable and accurate electrical signal when subjected to mechanical stress or voltage. Crystals are extensively used in oscillators
- Inductors
  - Inductors
  - Adjustable Inductors
  - Delay Lines
  - Fixed Inductors
  - Signal Transformers
  - Wireless Charging Coils
  - Inductors are passive electronic components that store electrical energy in the form of a magnetic field. They are typically made of a coil of wire wound around a core material and are used in various electrical circuits and systems. Inductors resist changes in current flow and are commonly employed in filtering, energy storage, impedance matching, and signal conditioning applications. They play a vital role in applications such as power supplies, radio frequency (RF) circuits, motor control, and electromagnetic compatibility (EMC) solutions.
- Filters
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  - Cable Ferrites
  - Ceramic Filters
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  - Filters Accessories
  - Helical Filters
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  - SAW Filters
  - Filters are electronic components designed to selectively allow or block certain frequencies or ranges of frequencies in a signal or waveform. They are used to remove unwanted noise, interference, or specific frequency components, and to shape or modify the frequency response of a circuit or system. Filters can be classified into different types, such as low-pass, high-pass, band-pass, and band-stop filters, each serving specific purposes in applications ranging from audio and communication systems to power electronics and signal processing.
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Items : %s%s

Single MOSFETs Transistors

Accuracy

Breakdown Voltage

Capacitance

1.02nF
2.569nF

Capacitance - Input

1.1nF
1.7nF
50pF
6.8nF
750pF

Case Code (Imperial)

0603

Case Code (Metric)

1608

Case Connection

DRAIN
DRAIN SOURCE
ISOLATED
SOURCE

Clamping Voltage

Collector Emitter Breakdown Voltage

Color

Black
Black, Clear
Natural

Configuration

SINGLE
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE AND RESISTOR

Diameter

12.7mm
13.081mm
15.875mm
16.764mm
19.304mm
22.225mm
44.958mm

ECCN Code

EAR99

Element Configuration

Dual
Single

FET Feature

Current Sensing
Depletion Mode
Schottky Diode (Body)
Schottky Diode (Isolated)
Standard
Super Junction
Temperature Sensing Diode

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Type

N-Channel
P-Channel

Flange Diameter

24.5872 mm

Forward Current

1.1A
2mA

Forward Voltage

-1.2V
1.3V
1V
450mV

Halogen Free

Halogen Free
Not Halogen Free

Hole Diameter

22.225 mm

HTS Code

8541.21.00.75
8541.21.00.95
8541.29.00.75
8541.29.00.95

Interface

On/Off

Isolation Voltage

2.5kV
2kV

JESD-609 Code

e0
e1
e2
e3
e3/e2
e4
e6

Lead Free

Contains Lead
Contains Lead, Lead Free
Lead Free

Lead Length

9.65mm

Lead Pitch

2.28mm
2.54mm
5.45mm

Material

Aluminium, Plastic
Brass
Brass, Bronze
Brass, Metal
Brass, Metal, Plastic
Brass, Plastic
Metal
Metal, Nylon
Plastic

Max Input Voltage

Max Output Current

1.6A
115A
1A
2A
45A

Max Repetitive Reverse Voltage (Vrrm)

Max Supply Voltage

Min Breakdown Voltage

100V
20V
30V
60V

Moisture Sensitivity Level (MSL)

1
1 (Unlimited)
2 (1 Year)
2A (4 Weeks)
3 (168 Hours)
Not Applicable
Vendor Undefined

Mount

Chassis Mount
Chassis Mount, Panel
Chassis Mount, Panel, Screw
Chassis Mount, Screw
Chassis Mount, Screw, Surface Mount
PCB, Through Hole
Surface Mount
Surface Mount, Through Hole
Through Hole

Mounting Type

Chassis Mount
Surface Mount
Surface Mount, Wettable Flank
Through Hole

Number of Channels

Number of Contacts

Number of Drivers

Number of Elements

Number of Rows

Number of Segments

Number of Terminations

Operating Mode

-0.85
-0.95
DEPLETION MODE
ENHANCEMENT MODE

Output Configuration

High Side

Output Current

2.3A
2.5A
5.3A

Output Type

Fixed

Output Voltage

-15V
2.5V

Panel Thickness

1.5748mm

Part Status

Active
Discontinued
Last Time Buy
Not For New Designs
Obsolete

Pbfree Code

Peak Reflow Temperature (Cel)

225
240
245
250
260
NOT APPLICABLE
NOT SPECIFIED

Pin Count

Pitch

Plating

Gold
Gold, Lead, Tin
Gold, Tin
Lead, Tin
Tin

Polarity

NPN
Positive

Polarity/Channel Type

N-CHANNEL
P-CHANNEL

Power Dissipation-Max (Abs)

198W
417W

Power Rating

100mW

Qualification Status

Not Qualified

Quiescent Current

Radiation Hardening

Rds On (Max) @ Id, Vgs

1Ohm @ 3.3A, 10V
3.6Ohm @ 1A, 10V
3Ohm @ 1.5A, 10V
550mOhm @ 6A, 10V

Reach Compliance Code

not_compliant
unknown

REACH SVHC

No SVHC
Unknown
Yes

Reference Standard

AEC-Q101
AEC-Q101; IEC-60134
IEC-60134

RoHS Status

Non-RoHS Compliant
RoHS Compliant
ROHS3 Compliant

Row Spacing

6.3 mm
7.62 mm

Source Url Status Check Date

2013-06-14 00:00:00

Subcategory

FET General Purpose Power
FET General Purpose Powers
Other Transistors

Surface Mount

Switching Current

Technology

GaNFET (Gallium Nitride)
MOSFET (Metal Oxide)
SiC (Silicon Carbide Junction Transistor)
SiCFET (Silicon Carbide)

Temperature Coefficient

25 ppm/°C

Terminal Form

BALL
C BEND
FLAT
GULL WING
NO LEAD
THROUGH-HOLE
UNSPECIFIED
WIRE

Terminal Position

BOTTOM
DUAL
SINGLE
UPPER

Termination

Crimp
Screw
SMD/SMT
SMD/SMT, Solder
Through Hole
Wire Wrap

Thickness

1.58mm
1mm
2mm

Time@Peak Reflow Temperature-Max (s)

10
20
30
40
NOT APPLICABLE
NOT SPECIFIED

Tolerance

0.1%
1%

Transistor Application

AMPLIFIER
SWITCHING

Transistor Element Material

SILICON

Voltage - Rated

Voltage - Threshold

2.1V
3V

Wire Gauge (Max)

18 AWG
22 AWG
24 AWG
26 AWG
28 AWG

Wire Gauge (Min)

14 AWG
16 AWG
20 AWG
22 AWG
24 AWG

Wire/Cable Gauge

18 AWG

Reset

Apply

Name	Manufacturer	Pricing(USD)	Quantity	Datasheet	Factory Lead Time	Lifecycle Status	Mount	Packaging	Published	Series	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Length	RoHS Status	Lead Free	Contact Plating	Current Rating	Radiation Hardening	Number of Pins	Additional Feature	Package / Case	REACH SVHC	Reach Compliance Code	Lead Pitch	Height	Width	Resistance	Mounting Type	Weight	Operating Temperature	Voltage - Rated DC	Technology	Operating Mode	JESD-609 Code	Terminal Finish	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Pin Count	Surface Mount	JESD-30 Code	Number of Channels	Subcategory	Qualification Status	Reference Standard	Number of Elements	Configuration	JEDEC-95 Code	Case Connection	Element Configuration	Power Dissipation	Turn On Delay Time	Threshold Voltage	Power Dissipation-Max	Recovery Time	Continuous Drain Current (ID)	Transistor Application	Drain-source On Resistance-Max	DS Breakdown Voltage-Min	Turn-Off Delay Time	Transistor Element Material	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rise Time	Fall Time (Typ)	Gate to Source Voltage (Vgs)	Drain to Source Breakdown Voltage	Dual Supply Voltage	Nominal Vgs	Drain Current-Max (Abs) (ID)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Pulsed Drain Current-Max (IDM)	Avalanche Energy Rating (Eas)	Drive Voltage (Max Rds On,Min Rds On)	Vgs (Max)
NX7002BKWX	Nexperia USA Inc.	0.0000	RFQ Min: 1 Mult: 1	download	4 Weeks		Surface Mount	Tape & Reel (TR)	2014			Active	1 (Unlimited)	3				ROHS3 Compliant						LOGIC LEVEL COMPATIBLE	SC-70, SOT-323							Surface Mount		-55°C~150°C TJ		MOSFET (Metal Oxide)	ENHANCEMENT MODE			DUAL	GULL WING	NOT SPECIFIED	NOT SPECIFIED	3		R-PDSO-G3				IEC-60134	1	SINGLE WITH BUILT-IN DIODE							310mW Ta 1.67W Tc		270mA	SWITCHING	3.2Ohm	60V		SILICON	N-Channel	2.8 Ω @ 200mA, 10V	2.1V @ 250μA	23.6pF @ 10V	1nC @ 10V							0.24A	270mA Ta	60V			5V 10V	±20V
IXFX24N100	IXYS	15.4471	Add to Cart Min: 1 Mult: 1	download	8 Weeks		Through Hole	Tube	2008	HiPerFET™	yes	Obsolete	1 (Unlimited)	3				ROHS3 Compliant	Lead Free				3	AVALANCHE RATED	TO-247-3						390mOhm	Through Hole		-55°C~150°C TJ		MOSFET (Metal Oxide)	ENHANCEMENT MODE	e1	Tin/Silver/Copper (Sn/Ag/Cu)			NOT SPECIFIED	NOT SPECIFIED	3				FET General Purpose Power	Not Qualified		1			DRAIN	Single	560W			560W Tc		24A	SWITCHING			75 ns	SILICON	N-Channel	390m Ω @ 12A, 10V	5.5V @ 8mA	8700pF @ 25V	267nC @ 10V	35ns	21 ns	20V	1kV				24A Tc	1000V	96A		10V	±20V
IPD60R1K4C6	Infineon Technologies	0.0000	RFQ Min: 1 Mult: 1	download				Tape & Reel (TR)	2011	CoolMOS™	yes	Discontinued	1 (Unlimited)	2				ROHS3 Compliant							TO-252-3, DPak (2 Leads + Tab), SC-63		not_compliant					Surface Mount		-55°C~150°C TJ		MOSFET (Metal Oxide)	ENHANCEMENT MODE	e3	Matte Tin (Sn)	SINGLE	GULL WING	NOT SPECIFIED	NOT SPECIFIED	4	YES	R-PSSO-G2		FET General Purpose Power	Not Qualified		1	SINGLE WITH BUILT-IN DIODE		DRAIN					28.4W Tc			SWITCHING		600V		SILICON	N-Channel	1.4 Ω @ 1.1A, 10V	3.5V @ 90μA	200pF @ 100V	9.4nC @ 10V							3.2A	3.2A Tc	600V	8A	26 mJ	10V	±20V
IRFZ20	Vishay Siliconix	0.1916	Add to Cart Min: 1 Mult: 1	download			Through Hole	Tube	2016		no	Obsolete	1 (Unlimited)	3		EAR99	10.41mm	Non-RoHS Compliant	Contains Lead		15A	No	3	ULTRA LOW-ON RESISTANCE	TO-220-3				9.01mm	4.7mm		Through Hole	6.000006g	-55°C~150°C TJ	50V	MOSFET (Metal Oxide)	ENHANCEMENT MODE	e0	TIN LEAD			240	30	3			1	FET General Purpose Power			1		TO-220AB	DRAIN	Single		15 ns		40W Tc		15A	SWITCHING			20 ns	SILICON	N-Channel	100m Ω @ 10A, 10V	4V @ 250μA	850pF @ 25V	17nC @ 10V	45ns	15 ns	20V					15A Tc		60A	5 mJ	10V	±20V
FQD6N40CTM	ON Semiconductor	0.0000	RFQ Min: 1 Mult: 1	download	4 Weeks	ACTIVE (Last Updated: 1 day ago)	Surface Mount	Tape & Reel (TR)		QFET®	yes	Active	1 (Unlimited)	2		EAR99	6.6mm	ROHS3 Compliant	Lead Free		4.5A	No	3	FAST SWITCHING	TO-252-3, DPak (2 Leads + Tab), SC-63	No SVHC			2.3mm	6.1mm	1Ohm	Surface Mount	260.37mg	-55°C~150°C TJ	400V	MOSFET (Metal Oxide)	ENHANCEMENT MODE	e3	Tin (Sn)		GULL WING					R-PSSO-G2		FET General Purpose Power			1		TO-252AA	DRAIN	Single	2.5W	13 ns	2V	2.5W Ta 48W Tc		4.5A	SWITCHING			21 ns	SILICON	N-Channel	1 Ω @ 2.25A, 10V	4V @ 250μA	625pF @ 25V	20nC @ 10V	65ns	38 ns	30V	400V				4.5A Tc			270 mJ	10V	±30V
IRFZ48NPBF	Infineon Technologies	0.0000	RFQ Min: 1 Mult: 1	download	12 Weeks		Through Hole	Tube	2001	HEXFET®		Active	1 (Unlimited)	3	Through Hole	EAR99	10.54mm	ROHS3 Compliant	Lead Free	Tin	64A	No	3	AVALANCHE RATED, HIGH RELIABILITY	TO-220-3	No SVHC		2.54mm	8.77mm	4.69mm		Through Hole		-55°C~175°C TJ	55V	MOSFET (Metal Oxide)	ENHANCEMENT MODE	e3				250	30					FET General Purpose Power			1		TO-220AB	DRAIN	Single	94W	12 ns	4V	130W Tc	100 ns	64A	SWITCHING			34 ns	SILICON	N-Channel	14m Ω @ 32A, 10V	4V @ 250μA	1970pF @ 25V	81nC @ 10V	78ns	50 ns	20V	55V	55V	4 V		64A Tc				10V	±20V
APT50M38JLL	Microsemi Corporation	0.0000	RFQ Min: 1 Mult: 1	download	23 Weeks	IN PRODUCTION (Last Updated: 1 month ago)	Chassis Mount, Screw	Tube	1997	POWER MOS 7®	yes	Active	1 (Unlimited)	4		EAR99	38.2mm	RoHS Compliant	Lead Free		88A	No	4	UL RECOGNIZED	SOT-227-4, miniBLOC				9.6mm	25.4mm		Chassis Mount	30.000004g	-55°C~150°C TJ	500V	MOSFET (Metal Oxide)	ENHANCEMENT MODE	e1	Tin/Silver/Copper (Sn/Ag/Cu)	UPPER	UNSPECIFIED			4			1	FET General Purpose Power			1			ISOLATED	Single	694W	17 ns		694W Tc		88A	SWITCHING	0.038Ohm		50 ns	SILICON	N-Channel	38m Ω @ 44A, 10V	5V @ 5mA	12000pF @ 25V	270nC @ 10V	22ns	4 ns	30V	500V				88A Tc		352A	3600 mJ	10V	±30V

NX7002BKWX Nexperia USA Inc.
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70 T/R

Price: 0.0000
RFQ
IXFX24N100 IXYS
MOSFET (Metal Oxide) N-Channel Tube 390m Ω @ 12A, 10V ±20V 8700pF @ 25V 267nC @ 10V 1000V TO-247-3

Price: 15.4471
RFQ
IPD60R1K4C6 Infineon Technologies
IPD60R1K4C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Price: 0.0000
RFQ
IRFZ20 Vishay Siliconix
MOSFET (Metal Oxide) N-Channel Tube 100m Ω @ 10A, 10V ±20V 850pF @ 25V 17nC @ 10V TO-220-3

Price: 0.1916
RFQ
FQD6N40CTM ON Semiconductor
FQD6N40CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Price: 0.0000
RFQ
IRFZ48NPBF Infineon Technologies
IRFZ48NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Price: 0.0000
RFQ
APT50M38JLL Microsemi Corporation
MOSFET (Metal Oxide) N-Channel Tube 38m Ω @ 44A, 10V ±30V 12000pF @ 25V 270nC @ 10V SOT-227-4, miniBLOC

Price: 0.0000
RFQ

Single MOSFETs Transistors

Accuracy

Additional Feature

Avalanche Energy Rating (Eas)

Base Part Number

Breakdown Voltage

Capacitance

Capacitance - Input

Case Code (Imperial)

Case Code (Metric)

Case Connection

Clamping Voltage

Collector Emitter Breakdown Voltage

Color

Configuration

Contact Plating

Continuous Drain Current (ID)

Current

Current Rating

Diameter

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Drive Voltage (Max Rds On,Min Rds On)

DS Breakdown Voltage-Min

Dual Supply Voltage

ECCN Code

Element Configuration

Factory Lead Time

Fall Time (Typ)

Feedback Cap-Max (Crss)

FET Feature

FET Technology

FET Type

Flange Diameter

Forward Current

Forward Voltage

Gate Charge (Qg) (Max) @ Vgs

Gate to Source Voltage (Vgs)

Halogen Free

Height

Hole Diameter

HTS Code

Input Capacitance

Input Capacitance (Ciss) (Max) @ Vds

Interface

Isolation Voltage

JEDEC-95 Code

JESD-30 Code

JESD-609 Code

Lead Free

Lead Length

Lead Pitch

Length

Lifecycle Status

Manufacturer Package Identifier

Material

Max Dual Supply Voltage

Max Input Voltage

Max Output Current

Max Power Dissipation

Max Repetitive Reverse Voltage (Vrrm)

Max Supply Voltage

Min Breakdown Voltage

Moisture Sensitivity Level (MSL)

Mount

Mounting Type

Nominal Vgs

Number of Channels

Number of Contacts

Number of Drivers

Number of Elements

Number of Pins

Number of Rows

Number of Segments

Number of Terminations

Operating Mode

Operating Temperature