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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IRFR5410TRPBF IRFR5410TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin -13A No 3 HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 205mOhm Surface Mount -55°C~150°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 Other Transistors 1 TO-252AA DRAIN Single 66W 15 ns -4V 66W Tc 190 ns -13A 150°C SWITCHING 45 ns SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 13A Tc 100V 52A 10V ±20V
RE1C002UNTCL RE1C002UNTCL ROHM Semiconductor 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2016 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free SC-89, SOT-490 850μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 1 SINGLE WITH BUILT-IN DIODE 150mW 5 ns 150mW Ta 200mA 150°C SWITCHING 15 ns SILICON N-Channel 1.2 Ω @ 100mA, 2.5V 1V @ 1mA 25pF @ 10V 8V 20V 0.2A 200mA Ta 1.2V 2.5V ±8V
BSS138W-7-F BSS138W-7-F Diodes Incorporated 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2008 yes Active 1 (Unlimited) 3 SMD/SMT EAR99 2.2mm ROHS3 Compliant Lead Free Tin 200mA 3 LOW THRESHOLD SC-70, SOT-323 No SVHC 1mm 1.35mm 3.5Ohm Surface Mount 6.010099mg -55°C~150°C TJ 50V MOSFET (Metal Oxide) ENHANCEMENT MODE 2A e3 DUAL GULL WING 260 40 3 1 FET General Purpose Powers Not Qualified 50V 1 Single 200mW 20 ns 1.2V 200mW Ta 200mA SWITCHING 20 ns SILICON N-Channel 3.5 Ω @ 220mA, 10V 1.5V @ 250μA 50pF @ 10V 20V 75V 50V 1.2 V 200mA Ta 8 pF 10V ±20V
DMN4468LSS-13 DMN4468LSS-13 Diodes Incorporated 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2008 yes Active 1 (Unlimited) 8 EAR99 4.95mm ROHS3 Compliant Lead Free No 8 HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 3.95mm Surface Mount 73.992255mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 8 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 5.46 ns 1.52W Ta 10A SWITCHING 30V 18.84 ns SILICON N-Channel 14m Ω @ 11.6A, 10V 1.95V @ 250μA 867pF @ 10V 18.85nC @ 10V 14.53ns 14.53 ns 20V 10A Ta 30V 50A 4.5V 10V ±20V
NP82N04NUG-S18-AY NP82N04NUG-S18-AY Renesas Electronics America 0.0000
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 39 ns 1.8W Ta 143W Tc 82A SWITCHING 0.0042Ohm 40V 67 ns SILICON N-Channel 4.2m Ω @ 41A, 10V 4V @ 250μA 9750pF @ 25V 160nC @ 10V 102ns 13 ns 20V 82A Tc 40V 10V ±20V
BSS138L BSS138L ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 2 days ago) Surface Mount Tape & Reel (TR) 2012 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.11mm Surface Mount 30mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers Not Qualified 1 Single 225mW 20 ns 1.25V 350mW Ta 200mA 150°C SWITCHING 20 ns SILICON N-Channel 3.5 Ω @ 200mA, 5V 1.5V @ 1mA 50pF @ 25V 2.4nC @ 10V 1.8ns 5.1 ns 20V 50V 0.2A 200mA Ta 5 pF 2.75V 5V ±20V
IPB65R380C6ATMA1 IPB65R380C6ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2008 CoolMOS™ no Obsolete 1 (Unlimited) 2 RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.38Ohm 650V SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 10.6A 10.6A Tc 650V 29A 215 mJ 10V ±20V
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