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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Thickness Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IXTC200N10T IXTC200N10T IXYS 0.0000
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0.00000000 download Through Hole Tube 2008 TrenchMV™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS220™ Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 160W 160W Tc 101A SWITCHING 45 ns SILICON N-Channel 6.3m Ω @ 50A, 10V 4.5V @ 250μA 9400pF @ 25V 152nC @ 10V 100V 101A Tc 500A 1500 mJ 10V ±30V
CSD16556Q5B CSD16556Q5B Texas Instruments 0.0000
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0.00000000 6 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) NexFET™ yes Active 1 (Unlimited) 5 EAR99 5mm ROHS3 Compliant Contains Lead No 8 AVALANCHE RATED 8-PowerTDFN No SVHC 6mm 950μm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 CSD16556 FET General Purpose Powers 1 DRAIN Single 3.2W 17 ns 1.4V 3.2W Ta 191W Tc 100A SWITCHING 25 ns SILICON N-Channel 1.07m Ω @ 30A, 10V 1.7V @ 250μA 6180pF @ 15V 47nC @ 4.5V 34ns 13 ns 20V 25V 40A 100A Tc 249A 530 mJ 4.5V 10V ±20V
RT1C060UNTR RT1C060UNTR ROHM Semiconductor 4.0754
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0.00000000 download 10 Weeks Surface Mount Cut Tape (CT) 2010 yes Not For New Designs 1 (Unlimited) 8 EAR99 ROHS3 Compliant Tin 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 650mW Ta 6A SWITCHING 0.033Ohm 20V SILICON N-Channel 28m Ω @ 6A, 4.5V 1V @ 1mA 870pF @ 10V 11nC @ 4.5V 30ns 10V 6A 6A Ta 20V 24A 1.5V 4.5V ±10V
BUK9107-40ATC,118 BUK9107-40ATC,118 Nexperia USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 TO-263-5, D2Pak (4 Leads + Tab), TO-263BB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 5 YES R-PSSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 272W Tc SWITCHING 0.0077Ohm 40V SILICON N-Channel 6.2m Ω @ 50A, 10V 2V @ 1mA 5836pF @ 25V Temperature Sensing Diode 75A 75A Tc 40V 560A 1400 mJ 4.5V 10V ±15V
RE1C002UNTCL RE1C002UNTCL ROHM Semiconductor 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2016 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free SC-89, SOT-490 850μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 1 SINGLE WITH BUILT-IN DIODE 150mW 5 ns 150mW Ta 200mA 150°C SWITCHING 15 ns SILICON N-Channel 1.2 Ω @ 100mA, 2.5V 1V @ 1mA 25pF @ 10V 8V 20V 0.2A 200mA Ta 1.2V 2.5V ±8V
SI2302ADS-T1-GE3 SI2302ADS-T1-GE3 Vishay Siliconix 0.0287
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0.00000000 download Surface Mount Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) 150°C -55°C 3.04mm ROHS3 Compliant Lead Free 3 TO-236-3, SC-59, SOT-23-3 Unknown 1.02mm 1.4mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 700mW 7 ns 950mV 60mOhm SOT-23-3 (TO-236) 700mW Ta 2.1A 16 ns N-Channel 60mOhm @ 3.6A, 4.5V 1.2V @ 50μA 300pF @ 10V 10nC @ 4.5V 55ns 55 ns 8V 20V 950 mV 2.1A Ta 20V 300pF 2.5V 4.5V ±8V 60 mΩ
PMV250EPEAR PMV250EPEAR Nexperia USA Inc. 0.0000
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0.00000000 download 4 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free Tin 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 3 1 SINGLE WITH BUILT-IN DIODE 4 ns 480mW Ta 6.25W Tc 1.5A SWITCHING 0.24Ohm 40V 26 ns SILICON P-Channel 240m Ω @ 1.3A, 10V 2.5V @ 250μA 450pF @ 20V 6nC @ 10V 6ns 14 ns 20V 1.5A Ta 40V 4.5V 10V ±20V
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