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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
NP82N04NUG-S18-AY NP82N04NUG-S18-AY Renesas Electronics America 0.0000
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 39 ns 1.8W Ta 143W Tc 82A SWITCHING 0.0042Ohm 40V 67 ns SILICON N-Channel 4.2m Ω @ 41A, 10V 4V @ 250μA 9750pF @ 25V 160nC @ 10V 102ns 13 ns 20V 82A Tc 40V 10V ±20V
IPB65R380C6ATMA1 IPB65R380C6ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2008 CoolMOS™ no Obsolete 1 (Unlimited) 2 RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.38Ohm 650V SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 10.6A 10.6A Tc 650V 29A 215 mJ 10V ±20V
BSS138L BSS138L ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 2 days ago) Surface Mount Tape & Reel (TR) 2012 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.11mm Surface Mount 30mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers Not Qualified 1 Single 225mW 20 ns 1.25V 350mW Ta 200mA 150°C SWITCHING 20 ns SILICON N-Channel 3.5 Ω @ 200mA, 5V 1.5V @ 1mA 50pF @ 25V 2.4nC @ 10V 1.8ns 5.1 ns 20V 50V 0.2A 200mA Ta 5 pF 2.75V 5V ±20V
IXFH26N100X IXFH26N100X IXYS 14.9781
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0.00000000 download 19 Weeks HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 860W Tc N-Channel 320m Ω @ 13A, 10V 6V @ 4mA 3290pF @ 25V 113nC @ 10V 26A Tc 1000V 10V ±30V
RE1C002UNTCL RE1C002UNTCL ROHM Semiconductor 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2016 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free SC-89, SOT-490 850μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 1 SINGLE WITH BUILT-IN DIODE 150mW 5 ns 150mW Ta 200mA 150°C SWITCHING 15 ns SILICON N-Channel 1.2 Ω @ 100mA, 2.5V 1V @ 1mA 25pF @ 10V 8V 20V 0.2A 200mA Ta 1.2V 2.5V ±8V
AOH3106 AOH3106 Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.1W Ta 2A N-Channel 360m Ω @ 2A, 10V 2V @ 250μA 185pF @ 50V 10nC @ 10V 2A Ta 100V 4.5V 10V ±20V
NTD4963N-35G NTD4963N-35G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 week ago) Tube 2008 yes Obsolete 1 (Unlimited) 3 EAR99 6.73mm RoHS Compliant Lead Free No 3 TO-251-3 Stub Leads, IPak No SVHC 6.35mm 2.38mm 9.6MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO FET General Purpose Powers 1 DRAIN Single 35.7W 12 ns 1.45V 1.1W Ta 35.7W Tc 44A SWITCHING 14 ns SILICON N-Channel 9.6m Ω @ 30A, 10V 2.5V @ 250μA 1035pF @ 12V 16.2nC @ 10V 20ns 3 ns 20V 30V 8.1A Ta 44A Tc 4.5V 10V ±20V
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