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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
RJK1056DPB-00#J5 RJK1056DPB-00#J5 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 5 SC-100, SOT-669 No SVHC Surface Mount 150°C TJ MOSFET (Metal Oxide) 5 1 65W 16 ns 65W Tc 25A 36 ns N-Channel 14m Ω @ 12.5A, 10V 3000pF @ 10V 41nC @ 10V 4.5ns 6.5 ns 20V 25A Ta 100V 10V ±20V
NDPL070N10BG NDPL070N10BG ON Semiconductor 0.0000
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0.00000000 download 4 Weeks Surface Mount, Through Hole Tube yes Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free 3 TO-220-3 No SVHC Through Hole 175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 30 ns 4V 2.1W Ta 72W Tc 70A 55 ns N-Channel 10.8m Ω @ 35A, 15V 4V @ 1mA 2010pF @ 50V 26nC @ 10V 180ns 40 ns 20V 70A Ta 100V 10V 15V ±20V
IRFZ24NSTRRPBF IRFZ24NSTRRPBF Infineon Technologies 5.0307
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free 17A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 45W 4.9 ns 70mOhm D2PAK 3.8W Ta 45W Tc 17A 19 ns N-Channel 70mOhm @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 17A Tc 55V 370pF 10V ±20V 70 mΩ
TPH4R50ANH,L1Q TPH4R50ANH,L1Q Toshiba Semiconductor and Storage 2.2909
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 1.6W Ta 78W Tc 60A 52 ns N-Channel 4.5m Ω @ 30A, 10V 4V @ 1mA 5200pF @ 50V 58nC @ 10V 9.6ns 13 ns 20V 60A Tc 100V 10V ±20V
IRF3709 IRF3709 Infineon Technologies 0.0000
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0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 3.1W Ta 120W Tc SWITCHING 0.009Ohm 30V SILICON N-Channel 9m Ω @ 15A, 10V 3V @ 250μA 2672pF @ 16V 41nC @ 5V 90A 90A Tc 30V 360A 382 mJ 4.5V 10V ±20V
IRLML9301TRPBF IRLML9301TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 3.0226mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.397mm 64MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE IRLML9301TRPBF e3 Matte Tin (Sn) DUAL GULL WING 1 Other Transistors 1 Single 1.3W 9.6 ns -2.4V 1.3W Ta 21 ns -3.6A 150°C SWITCHING 16 ns SILICON P-Channel 64m Ω @ 3.6A, 10V 2.4V @ 10μA 388pF @ 25V 4.8nC @ 4.5V 19ns 15 ns 20V -30V -1.3 V 3.6A Ta 30V 4.5V 10V ±20V
RJK0703DPN-A0#T2 RJK0703DPN-A0#T2 Renesas Electronics America 0.0000
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole 150°C MOSFET (Metal Oxide) 125W Ta N-Channel 6.7m Ω @ 35A, 10V 4V @ 1mA 4150pF @ 10V 56nC @ 10V 70A Ta 75V 10V ±20V
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