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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
VN1206L-G VN1206L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 1W 8 ns 1W Tc 230mA SWITCHING 6Ohm 18 ns SILICON N-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 12 ns 30V 120V 230mA Tj 20 pF 2.5V 10V ±30V
IRLR7843TRPBF IRLR7843TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin 161A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.2606mm 6.22mm 3.3MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 25 ns 2.3V 140W Tc 59 ns 161A SWITCHING 34 ns SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 42ns 19 ns 20V 30V 2.3 V 161A Tc 620A 4.5V 10V ±20V
APT31M100L APT31M100L Microsemi Corporation 0.0000
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0.00000000 download 21 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 POWER MOS 8™ Active 1 (Unlimited) 3 RoHS Compliant Lead Free 31A AVALANCHE RATED, HIGH RELIABILITY TO-264-3, TO-264AA Through Hole -55°C~150°C TJ 1kV MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.04kW 39 ns 1040W Tc 32A SWITCHING 0.38Ohm 130 ns SILICON N-Channel 400m Ω @ 16A, 10V 5V @ 2.5mA 8500pF @ 25V 260nC @ 10V 35ns 33 ns 30V 32A Tc 1000V 10V ±30V
BSS169 E6327 BSS169 E6327 Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2007 SIPMOS® Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) YES FET General Purpose Power Single 360mW Ta N-Channel 6 Ω @ 170mA, 10V 1.8V @ 50μA 68pF @ 25V 2.8nC @ 7V Depletion Mode 0.17A 170mA Ta 100V 0V 10V ±20V
IRF3205ZSTRLPBF IRF3205ZSTRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 6.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 18 ns 170W Tc 75A SWITCHING 45 ns SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 95ns 67 ns 20V 55V 20 V 75A Tc 440A 250 mJ 10V ±20V
FDWS9511L-F085 FDWS9511L-F085 ON Semiconductor 0.0000
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0.00000000 download 22 Weeks Tape & Reel (TR) yes Active 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 68.2W Tc P-Channel 20.5m Ω @ 30A, 10V 3V @ 250μA 1200pF @ 20V 18nC @ 10V 30A Tc 40V 4.5V 10V ±20V
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 Unknown 1.12mm 1.4mm 88MOhm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 3 1 Other Transistors 1 Single 1.1W 5.5 ns -3V 1.1W Ta 1.8W Tc -2.7A 150°C SWITCHING 17 ns SILICON P-Channel 88m Ω @ 3.5A, 10V 3V @ 250μA 340pF @ 15V 6.2nC @ 4.5V 40ns 40 ns 20V -30V -3 V 3.5A Tc 30V 4.5V 10V ±20V
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