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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Source Url Status Check Date Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
RE1C002UNTCL RE1C002UNTCL ROHM Semiconductor 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2016 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free SC-89, SOT-490 850μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 1 SINGLE WITH BUILT-IN DIODE 150mW 5 ns 150mW Ta 200mA 150°C SWITCHING 15 ns SILICON N-Channel 1.2 Ω @ 100mA, 2.5V 1V @ 1mA 25pF @ 10V 8V 20V 0.2A 200mA Ta 1.2V 2.5V ±8V
FDMS8558SDC FDMS8558SDC ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) yes Obsolete 1 (Unlimited) 5 EAR99 150°C -55°C 5.1mm RoHS Compliant Lead Free No 8 No SVHC 1.05mm 5.85mm 90mg ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT R-PDSO-F5 FET General Purpose Power 89W 1 MO-240AA DRAIN N-CHANNEL Single 41W 14 ns 1.4V 5.7mOhm 90A SWITCHING METAL-OXIDE SEMICONDUCTOR 51 ns 8ns 7 ns 12V 25V 25V 140A 145 mJ 5.118nF 1.5 mΩ
DKI06186 DKI06186 Sanken 4.4488
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0.00000000 download 12 Weeks Surface Mount Cut Tape (CT) 2015 Discontinued 1 (Unlimited) RoHS Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 37W Tc 31A N-Channel 15m Ω @ 15.5A, 10V 2.5V @ 350μA 1510pF @ 25V 23.7nC @ 10V 31A Tc 60V 4.5V 10V ±20V
PMV16UN,215 PMV16UN,215 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3 510mW Ta 2013-06-14 00:00:00 N-Channel 18m Ω @ 5.8A, 4.5V 1V @ 250μA 670pF @ 10V 11nC @ 4.5V 5.8A Ta 20V 1.8V 4.5V ±8V
IRFH8324TRPBF IRFH8324TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 13 ns 3.6W Ta 54W Tc 23A SWITCHING 14 ns SILICON N-Channel 4.1m Ω @ 20A, 10V 2.35V @ 50μA 2380pF @ 10V 31nC @ 10V 26ns 8.5 ns 20V 30V 1.8 V 50A 23A Ta 90A Tc 200A 94 mJ 4.5V 10V ±20V
NTD4302-001 NTD4302-001 Rochester Electronics, LLC 0.0000
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0.00000000 download no Obsolete 1 (Unlimited) 3 Non-RoHS Compliant LOGIC LEVEL COMPATIBLE ENHANCEMENT MODE e0 TIN LEAD SINGLE THROUGH-HOLE 240 30 3 NO R-PSIP-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL SWITCHING 0.01Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 8.4A 28A 722 mJ
IRFS23N20DPBF IRFS23N20DPBF Infineon Technologies 0.0000
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0.00000000 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 170W Tc SWITCHING 0.1Ohm 200V SILICON N-Channel 100m Ω @ 14A, 10V 5.5V @ 250μA 1960pF @ 25V 86nC @ 10V 24A 24A Tc 200V 96A 250 mJ 10V ±30V
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