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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Voltage Number of Elements JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IXTP220N04T2 IXTP220N04T2 IXYS / Littelfuse 0.0000
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0.00000000 download 24 Weeks Through Hole Tube 2008 TrenchT2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 75A e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 40V 1 TO-220AB DRAIN Single 360W 360W Tc 220A SWITCHING 0.0035Ohm 31 ns SILICON N-Channel 3.5m Ω @ 50A, 10V 4V @ 250μA 6820pF @ 25V 112nC @ 10V 21ns 21 ns 20V 40V 220A Tc 600 mJ 10V ±20V
IRFR3711TRRPBF IRFR3711TRRPBF Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta 120W Tc N-Channel 6.5m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 100A Tc 20V 4.5V 10V ±20V
AUIRF1324 AUIRF1324 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant No 3 ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 300W 17 ns 2V 300W Tc 195A SWITCHING 83 ns SILICON N-Channel 1.5m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 190ns 120 ns 20V 24V 195A Tc 270 mJ 10V ±20V
IRF9530STRR IRF9530STRR Vishay Siliconix 0.4355
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0.00000000 Surface Mount Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) 175°C -55°C 10.67mm Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 12 ns 300mOhm D2PAK 3.7W Ta 88W Tc 12A 31 ns P-Channel 300mOhm @ 7.2A, 10V 4V @ 250μA 860pF @ 25V 38nC @ 10V 52ns 39 ns 20V -100V 12A Tc 100V 860pF 10V ±20V 300 mΩ
DMP25H18DLFDE-7 DMP25H18DLFDE-7 Diodes Incorporated 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2004 Active 1 (Unlimited) EAR99 ROHS3 Compliant 6-UDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e4 Nickel/Palladium/Gold (Ni/Pd/Au) NOT SPECIFIED NOT SPECIFIED 600mW Ta 260mA P-Channel 14 Ω @ 200mA, 10V 2.5V @ 1mA 81pF @ 25V 2.8nC @ 10V 260mA Ta 250V 3.5V 10V ±40V
SUM75N06-09L-E3 SUM75N06-09L-E3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2012 TrenchFET® yes Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C 10.41mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.83mm 9.65mm 9.3mOhm Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 4 R-PSSO-G2 FET General Purpose Power 3.75W 1 DRAIN Single 3.75W 7 ns 2V 90A SWITCHING 25 ns N-Channel 9.3m Ω @ 30A, 10V 3V @ 250μA 2400pF @ 25V 75nC @ 10V 30ns 12 ns 20V 60V 2 V 90A Tc
NTMTS0D4N04CLTXG NTMTS0D4N04CLTXG ON Semiconductor 0.0000
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0.00000000 download 33 Weeks Tape & Reel (TR) yes Active 1 (Unlimited) 8-PowerTDFN compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 5W Ta 244W Tc N-Channel 400μ Ω @ 50A, 10V 2.5V @ 250μA 20600pF @ 20V 341nC @ 10V 79.8A Ta 553.8A Tc 40V 4.5V 10V ±20V
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