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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
NVMFS5C645NLT1G NVMFS5C645NLT1G ON Semiconductor 0.0000
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0.00000000 download 38 Weeks ACTIVE, NOT REC (Last Updated: 1 week ago) Tape & Reel (TR) Automotive, AEC-Q101 yes Discontinued 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN, 5 Leads not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 3.7W Ta 79W Tc N-Channel 4m Ω @ 50A, 10V 2V @ 250μA 2200pF @ 50V 34nC @ 10V 22A Ta 100A Tc 60V 4.5V 10V ±20V
BSS123W-7-F BSS123W-7-F Diodes Incorporated 0.0000
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 3 EAR99 2.2mm ROHS3 Compliant Lead Free Tin 170mA No 3 HIGH RELIABILITY, LOW THRESHOLD SC-70, SOT-323 No SVHC 1mm 1.35mm 6Ohm Surface Mount 6.010099mg -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 3 1 FET General Purpose Powers 1 Single 200mW 8 ns 200mW Ta 170mA SWITCHING 13 ns SILICON N-Channel 6 Ω @ 170mA, 10V 2V @ 1mA 60pF @ 25V 8ns 8 ns 20V 100V 170mA Ta 6 pF 4.5V 10V ±20V
NX3020NAKT,115 NX3020NAKT,115 NXP USA Inc. 0.1557
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0.00000000 Tape & Reel (TR) 2013 Obsolete 1 (Unlimited) ROHS3 Compliant SC-75, SOT-416 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3 230mW Ta 1.06W Tc N-Channel 4.5 Ω @ 100mA, 10V 1.5V @ 250μA 13pF @ 10V 0.44nC @ 4.5V 180mA Ta 30V 2.5V 10V ±20V
PMV250EPEAR PMV250EPEAR Nexperia USA Inc. 0.0000
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0.00000000 download 4 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free Tin 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 3 1 SINGLE WITH BUILT-IN DIODE 4 ns 480mW Ta 6.25W Tc 1.5A SWITCHING 0.24Ohm 40V 26 ns SILICON P-Channel 240m Ω @ 1.3A, 10V 2.5V @ 250μA 450pF @ 20V 6nC @ 10V 6ns 14 ns 20V 1.5A Ta 40V 4.5V 10V ±20V
IRF8721TRPBF IRF8721TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 8.2 ns 2.5W Ta 14A SWITCHING 8.1 ns SILICON N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 2.35 V 14A Ta 4.5V 10V ±20V
IPA70R750P7SXKSA1 IPA70R750P7SXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 21.2W Tc SWITCHING 0.75Ohm 700V SILICON N-Channel 750m Ω @ 1.4A, 10V 3.5V @ 70μA 306pF @ 400V 8.3nC @ 400V 6.5A Tc 700V 15.4A 10V ±16V
SIHB24N65ET5-GE3 SIHB24N65ET5-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) E Active 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 250W Tc N-Channel 145m Ω @ 12A, 10V 4V @ 250μA 2740pF @ 100V 122nC @ 10V 24A Tc 650V 10V ±30V
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