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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Case Connection Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
APT53N60BC6 APT53N60BC6 Microsemi Corporation 0.0000
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0.00000000 24 Weeks Tube 1997 CoolMOS™ Active 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 417W Tc SWITCHING 0.07Ohm 600V SILICON N-Channel 70m Ω @ 25.8A, 10V 3.5V @ 1.72mA 4020pF @ 25V 154nC @ 10V 53A 53A Tc 600V 159A 1135 mJ 10V ±20V
FQD4P40TM FQD4P40TM ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) QFET® yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free Tin -2.7A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 260.37mg -55°C~150°C TJ -400V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 Other Transistors 1 DRAIN Single 2.5W 13 ns 2.5W Ta 50W Tc 2.7A SWITCHING 35 ns SILICON P-Channel 3.1 Ω @ 1.35A, 10V 5V @ 250μA 680pF @ 25V 23nC @ 10V 55ns 37 ns 30V -400V 2.7A Tc 400V 260 mJ 10V ±30V
IRF7807TRPBF IRF7807TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 8 SMD/SMT 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 13A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 4.05mm 25MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 1 6.3 mm Single 2.5W 12 ns 1V 2.5W Ta 8.3A 150°C SWITCHING 25 ns SILICON N-Channel 25m Ω @ 7A, 4.5V 1V @ 250μA 17nC @ 5V 17ns 6 ns 12V 30V 30V 1 V 8.3A Ta 66A 4.5V ±12V
SI3447BDV-T1-GE3 SI3447BDV-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2015 TrenchFET® yes Obsolete 1 (Unlimited) 6 EAR99 ROHS3 Compliant No 6 ULTRA-LOW RESISTANCE SOT-23-6 Thin, TSOT-23-6 Unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 6 Other Transistors 1 Single 1.1W 20 ns 1V 1.1W Ta -4.5A SWITCHING 0.04Ohm 62 ns SILICON P-Channel 40m Ω @ 6A, 4.5V 1V @ 250μA 14nC @ 4.5V 46ns 62 ns 8V 12V 1 V 4.5A Ta 1.8V 4.5V ±8V
IXFN34N80 IXFN34N80 IXYS / Littelfuse 0.0000
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0.00000000 download 8 Weeks Chassis Mount Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 4 RoHS Compliant 4 AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 600W 600W Tc 34A SWITCHING 100 ns SILICON N-Channel 240m Ω @ 500mA, 10V 5V @ 8mA 7500pF @ 25V 270nC @ 10V 45ns 40 ns 20V 800V 34A Tc 136A 3000 mJ 10V ±20V
NTMFS4937NT3G NTMFS4937NT3G ON Semiconductor 0.0000
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0.00000000 download 16 Weeks ACTIVE (Last Updated: 1 week ago) Tape & Reel (TR) 2012 yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 5 8-PowerTDFN, 5 Leads Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 5 YES FET General Purpose Power 1 DRAIN Single 920mW Ta 43W Tc 70A SWITCHING 0.007Ohm 30V SILICON N-Channel 4m Ω @ 30A, 10V 2.2V @ 250μA 2516pF @ 15V 31nC @ 10V 20V 10.2A 10.2A Ta 70A Tc 30V 210A 4.5V 10V ±20V
IRF3707Z IRF3707Z Infineon Technologies 0.0000
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0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 57W Tc SWITCHING 0.0095Ohm 30V SILICON N-Channel 9.5m Ω @ 21A, 10V 2.25V @ 250μA 1210pF @ 15V 15nC @ 4.5V 42A 59A Tc 30V 230A 40 mJ 4.5V 10V ±20V
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