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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
AO3401A AO3401A Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2011 yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 1.25mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 3 1 1 SINGLE WITH BUILT-IN DIODE 1.4W 6.5 ns -900mV 1.4W Ta -4A 150°C SWITCHING 0.05Ohm 41 ns SILICON P-Channel 44m Ω @ 4.3A, 10V 1.3V @ 250μA 1200pF @ 15V 12.2nC @ 4.5V 12V -30V 4A 4A Ta 30V 2.5V 10V ±12V
FQI8N60CTU FQI8N60CTU ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 2 days ago) Through Hole Tube 2013 QFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 8A No TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 2.084g -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) R-PSIP-T3 FET General Purpose Power 1 Single 3.13W 16.5 ns 3.13W Ta 147W Tc 7.5A SWITCHING 81 ns SILICON N-Channel 1.2 Ω @ 3.75A, 10V 4V @ 250μA 1255pF @ 25V 36nC @ 10V 60.5ns 64.5 ns 30V 600V 7.5A Tc 30A 230 mJ 10V ±30V
NTB6412ANT4G NTB6412ANT4G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 week ago) Tape & Reel (TR) 2009 yes Obsolete 1 (Unlimited) 2 EAR99 10.29mm RoHS Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING 260 40 3 YES R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 167W 16 ns 167W Tc 58A 70 ns SILICON N-Channel 18.2m Ω @ 58A, 10V 4V @ 250μA 3500pF @ 25V 100nC @ 10V 140ns 126 ns 20V 58A Tc 100V 240A 10V ±20V
FQPF3N90 FQPF3N90 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube QFET® yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Full Pack unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE ISOLATED 43W Tc SWITCHING 900V SILICON N-Channel 4.25 Ω @ 1.05A, 10V 5V @ 250μA 910pF @ 25V 26nC @ 10V 2.1A 2.1A Tc 900V 8.4A 450 mJ 10V ±30V
STB110N55F6 STB110N55F6 STMicroelectronics 0.0000
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0.00000000 52 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant STB110N
NTD24N06T4G NTD24N06T4G ON Semiconductor 0.0000
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0.00000000 download 17 Weeks ACTIVE (Last Updated: 1 day ago) Tape & Reel (TR) 2005 yes Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin 24A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.38mm 6.22mm 36mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 3 YES R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 62.5W 10 ns 1.36W Ta 62.5W Tj 24A SWITCHING 25 ns SILICON N-Channel 42m Ω @ 10A, 10V 4V @ 250μA 1200pF @ 25V 48nC @ 10V 24ns 27 ns 20V 60V 24A Ta 80A 10V ±20V
NVTFWS002N04CLTAG NVTFWS002N04CLTAG ON Semiconductor 0.0000
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0.00000000 download 18 Weeks Tape & Reel (TR) Automotive, AEC-Q101 yes Active 1 (Unlimited) 8-PowerWDFN compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3.2W Ta 85W Tc N-Channel 2.2m Ω @ 50A, 10V 2V @ 90μA 2940pF @ 25V 49nC @ 10V 28A Ta 142A Tc 40V 4.5V 10V ±20V
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