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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Height Width Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) JESD-30 Code Number of Channels Subcategory Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
VN2222LL-G VN2222LL-G Microchip Technology 0.4499
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0.00000000 download 6 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 10 ns 400mW Ta 1W Tc 230mA SWITCHING 10 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 0.099A 230mA Tj 8 pF 5V 10V ±30V
UPA2720GR-E1-A UPA2720GR-E1-A Rochester Electronics, LLC 1.2776
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant 8-SOIC (0.173, 4.40mm Width) Surface Mount MOSFET (Metal Oxide) 8-PSOP N-Channel 6.6mOhm @ 7A, 10V 2.5V @ 1mA 2.8pF @ 10V 27nC @ 5V 14A Ta 30V
IPD60R360CFD7ATMA1 IPD60R360CFD7ATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks CoolMOS™ CFD7 Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 43W Tc N-Channel 360m Ω @ 2.9A, 10V 4.5V @ 140μA 679pF @ 400V 14nC @ 10V 7A Tc 650V 10V ±20V
AOB25S65L AOB25S65L Alpha & Omega Semiconductor Inc. 2.7050
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 aMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 357W Tc 25A SWITCHING 0.19Ohm 650V SILICON N-Channel 190m Ω @ 12.5A, 10V 4V @ 250μA 1278pF @ 100V 26.4nC @ 10V 25A Tc 650V 104A 750 mJ 10V ±30V
2SK4099LS 2SK4099LS Rochester Electronics, LLC 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220FI(LS) 2W Ta 35W Tc N-Channel 940mOhm @ 4A, 10V 5V @ 1mA 750pF @ 30V 29nC @ 10V 6.9A Tc 600V 10V ±30V
BSP129L6906HTSA1 BSP129L6906HTSA1 Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 SIPMOS® Obsolete 1 (Unlimited) 4 RoHS Compliant No 4 TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE DRAIN 4.4 ns 1.8W Ta 350mA 6Ohm 22 ns SILICON N-Channel 6 Ω @ 350mA, 10V 1V @ 108μA 108pF @ 25V 5.7nC @ 5V 4.1ns 35 ns 20V Depletion Mode 0.35A 350mA Ta 240V 0V 10V ±20V
BUK9510-100B,127 BUK9510-100B,127 Rochester Electronics, LLC 1.0052
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0.00000000 download Tube TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-220AB 300W Tc N-Channel 9.7mOhm @ 25A, 10V 2V @ 1mA 11.045pF @ 25V 86nC @ 5V 75A Tc 100V 4.5V 10V ±15V
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