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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Thickness Mounting Type Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
RE1C002UNTCL RE1C002UNTCL ROHM Semiconductor 0.0000
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0.00000000 download 16 Weeks Surface Mount Cut Tape (CT) 2016 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free SC-89, SOT-490 850μm Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 1 SINGLE WITH BUILT-IN DIODE 150mW 5 ns 150mW Ta 200mA 150°C SWITCHING 15 ns SILICON N-Channel 1.2 Ω @ 100mA, 2.5V 1V @ 1mA 25pF @ 10V 8V 20V 0.2A 200mA Ta 1.2V 2.5V ±8V
IRF3704 IRF3704 Infineon Technologies 0.0000
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 87W Tc SWITCHING 0.0079Ohm 20V SILICON N-Channel 9m Ω @ 15A, 10V 3V @ 250μA 1996pF @ 10V 19nC @ 4.5V 42A 77A Tc 20V 260A 36 mJ 4.5V 10V ±20V
SI1077X-T1-GE3 SI1077X-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2014 TrenchFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free Tin No 6 SOT-563, SOT-666 No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT 260 30 1 SINGLE WITH BUILT-IN DIODE -1V 330mW Ta 1.75A SWITCHING 0.078Ohm 20V SILICON P-Channel 78m Ω @ 1.8A, 4.5V 1V @ 250μA 965pF @ 10V 31.1nC @ 8V 8V 20V 1.5V 4.5V ±8V
CSD18542KTTT CSD18542KTTT Texas Instruments 0.0000
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0.00000000 8 Weeks ACTIVE (Last Updated: 5 days ago) Tape & Reel (TR) NexFET™ yes Active 2 (1 Year) 3 10.18mm ROHS3 Compliant Contains Lead 3 AVALANCHE RATED TO-263-4, D2Pak (3 Leads + Tab), TO-263AA No SVHC not_compliant 4.83mm 8.41mm 4.44mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 NOT SPECIFIED CSD18542 YES 1 DRAIN Single 1.8V 250W Tc 170A SWITCHING 0.0051Ohm 60V SILICON N-Channel 4m Ω @ 100A, 10V 2.2V @ 250μA 5070pF @ 30V 57nC @ 10V 200A 200A Ta 170A Tc 60V 400A 281 mJ 14 pF 4.5V 10V ±20V
DMN2400UFB4-7B DMN2400UFB4-7B Diodes Incorporated 0.0000
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0.00000000 download 40 Weeks Tape & Reel (TR) 2011 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 HIGH RELIABILITY, LOW THRESHOLD DFN No SVHC ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) BOTTOM NO LEAD 260 40 3 YES 150°C FET General Purpose Power Not Qualified AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 0.47W 750mA SWITCHING 0.55Ohm METAL-OXIDE SEMICONDUCTOR SILICON 0.75A 20V
MCP87030T-U/MF MCP87030T-U/MF Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2002 Obsolete 1 (Unlimited) EAR99 5mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87030 YES FET General Purpose Powers Single 2.2W 5 ns 1.3V 2.2W Ta 100A 14 ns N-Channel 3.5m Ω @ 20A, 10V 1.6V @ 250μA 1635pF @ 12.5V 22nC @ 4.5V 17ns 16 ns 10V 25V 1.3 V 100A Tc 4.5V 10V +10V, -8V
TK13A50D(STA4,Q,M) TK13A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 45W Tc 13A N-Channel 400mOhm @ 6.5A, 10V 4V @ 1mA 1800pF @ 25V 38nC @ 10V 40ns 15 ns 30V 13A Ta 500V 1.8nF 10V ±30V 400 mΩ
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