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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies 0.0000
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0.00000000 18 Weeks CoolMOS™PFD7 Active 3 (168 Hours) ROHS3 Compliant TO-261-3 Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 6W Tc N-Channel 2 Ω @ 500mA, 10V 4.5V @ 30μA 134pF @ 400V 3.8nC @ 10V 3A Tc 650V 10V ±20V
IPUH6N03LA G IPUH6N03LA G Infineon Technologies 0.0000
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-251-3 Short Leads, IPak, TO-251AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 71W Tc SWITCHING 0.0062Ohm 25V SILICON N-Channel 6.2m Ω @ 50A, 10V 2V @ 30μA 2390pF @ 15V 19nC @ 5V 50A 50A Tc 25V 350A 150 mJ 4.5V 10V ±20V
STH260N6F6-2 STH260N6F6-2 STMicroelectronics 0.0000
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0.00000000 download 20 Weeks ACTIVE (Last Updated: 8 months ago) Surface Mount Tape & Reel (TR) DeepGATE™, STripFET™ VI Active 1 (Unlimited) 2 EAR99 15.8mm ROHS3 Compliant Lead Free No 4 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.8mm 10.4mm 2MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING STH260 2 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 300W 31.4 ns 2V 300W Tc 180A SWITCHING 144.4 ns SILICON N-Channel 2.4m Ω @ 60A, 10V 4V @ 250μA 11800pF @ 25V 183nC @ 10V 165ns 62.6 ns 20V 75V 180A Tc 60V 720A 10V ±20V
BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 30V 2.1W Ta 35W Tc 12A SWITCHING SILICON N-Channel 8.8m Ω @ 20A, 10V 2.2V @ 250μA 1700pF @ 15V 21nC @ 10V 2.8ns 20V 40A 12A Ta 40A Tc 25 mJ 4.5V 10V ±20V
IXFN260N17T IXFN260N17T IXYS 0.0000
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0.00000000 download Chassis Mount Tube 2009 GigaMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant UL RECOGNIZED, AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NICKEL SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 1090W Tc 245A SWITCHING 0.0065Ohm 170V SILICON N-Channel 6.5m Ω @ 60A, 10V 5V @ 8mA 24000pF @ 25V 400nC @ 10V 245A Tc 170V 700A 3000 mJ 10V ±20V
FQI8N60CTU FQI8N60CTU ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 2 days ago) Through Hole Tube 2013 QFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 8A No TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole 2.084g -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) R-PSIP-T3 FET General Purpose Power 1 Single 3.13W 16.5 ns 3.13W Ta 147W Tc 7.5A SWITCHING 81 ns SILICON N-Channel 1.2 Ω @ 3.75A, 10V 4V @ 250μA 1255pF @ 25V 36nC @ 10V 60.5ns 64.5 ns 30V 600V 7.5A Tc 30A 230 mJ 10V ±30V
SSM6K404TU,LF SSM6K404TU,LF Toshiba Semiconductor and Storage 0.4083
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 55m Ω @ 2A, 4V 1V @ 1mA 400pF @ 10V 5.9nC @ 4V 3A Ta 20V 1.5V 4V ±10V
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