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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
FDC5612 FDC5612 ON Semiconductor 0.0000
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0.00000000 download 5 Weeks ACTIVE (Last Updated: 1 day ago) Surface Mount Tape & Reel (TR) 1999 PowerTrench® yes Active 1 (Unlimited) 6 EAR99 3mm ROHS3 Compliant Lead Free Tin 4.3A No 6 SOT-23-6 Thin, TSOT-23-6 No SVHC 1.1mm 1.7mm 55mOhm Surface Mount 36mg -55°C~150°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 1 FET General Purpose Power 1 Single 1.6W 11 ns 2.2V 1.6W Ta 4.3A 150°C SWITCHING 19 ns SILICON N-Channel 55m Ω @ 4.3A, 10V 4V @ 250μA 650pF @ 25V 18nC @ 10V 8ns 8 ns 20V 60V 60V 4.3A Ta 6V 10V ±20V
IPS105N03LGAKMA1 IPS105N03LGAKMA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 38W 38W Tc 35A SWITCHING 30V SILICON N-Channel 10.5m Ω @ 30A, 10V 2.2V @ 250μA 1500pF @ 15V 14nC @ 10V 20V 35A Tc 30V 245A 30 mJ 4.5V 10V ±20V
FQP19N20L FQP19N20L Rochester Electronics, LLC 0.0000
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0.00000000 download Tube QFET® yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-220AB 140W Tc SWITCHING 0.14Ohm 200V SILICON N-Channel 140m Ω @ 10.5A, 10V 2V @ 250μA 2.2pF @ 25V 35nC @ 5V 21A 21A Tc 200V 84A 250 mJ 5V 10V ±20V
IRF1010NSPBF IRF1010NSPBF Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 180W Tc N-Channel 11m Ω @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 85A Tc 55V 10V ±20V
FDP6670AL FDP6670AL Rochester Electronics, LLC 0.0000
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0.00000000 download Tube PowerTrench® yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-220-3 unknown Through Hole -65°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT APPLICABLE NOT APPLICABLE 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-220AB 68W Tc SWITCHING 0.0065Ohm 30V SILICON N-Channel 6.5m Ω @ 40A, 10V 3V @ 250μA 2.44pF @ 15V 33nC @ 5V 80A 80A Ta 30V 240A 114 mJ 4.5V 10V ±20V
IPA60R160C6XKSA1 IPA60R160C6XKSA1 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 13 ns 600V 34W Tc 23.8A SWITCHING 96 ns SILICON N-Channel 160m Ω @ 11.3A, 10V 3.5V @ 750μA 1660pF @ 100V 75nC @ 10V 13ns 8 ns 20V 23.8A Tc 70A 497 mJ 10V ±20V
IRFIB6N60APBF IRFIB6N60APBF Vishay Siliconix 0.6520
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0.00000000 download 8 Weeks Through Hole Tube 2016 Active 1 (Unlimited) 150°C -55°C 10.63mm ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack, Isolated Tab Unknown 9.8mm 4.83mm 750mOhm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 60W 13 ns 4V 750mOhm TO-220-3 60W Tc 5.5A 30 ns N-Channel 750mOhm @ 3.3A, 10V 4V @ 250μA 1400pF @ 25V 49nC @ 10V 25ns 22 ns 30V 600V 4 V 5.5A Tc 600V 1.4nF 10V ±30V 750 mΩ
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