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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
STP18NM60ND STP18NM60ND STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube FDmesh™ II Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 TO-220-3 15.75mm 4.6mm 290mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE STP18N 1 TO-220AB DRAIN Single 130W 55 ns 110W Tc 13A SWITCHING 13 ns SILICON N-Channel 290m Ω @ 6.5A, 10V 5V @ 250μA 1030pF @ 50V 34nC @ 10V 15.5ns 18 ns 25V 650V 13A Tc 600V 52A 187 mJ 10V ±25V
IRF9Z34NSTRLPBF IRF9Z34NSTRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free -19A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 100mOhm Surface Mount -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 1 DRAIN Single 68W 13 ns -2V 3.8W Ta 68W Tc 82 ns -19A 175°C SWITCHING 30 ns SILICON P-Channel 100m Ω @ 10A, 10V 4V @ 250μA 620pF @ 25V 35nC @ 10V 55ns 41 ns 20V -55V 55V -4 V 19A Tc 68A 10V ±20V
TK30S06K3L(T6L1,NQ TK30S06K3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 1 58W DPAK+ 58W Tc 30A N-Channel 18Ohm @ 15A, 10V 3V @ 1mA 1350pF @ 10V 28nC @ 10V 10ns 11 ns 20V 30A Ta 60V 1.35nF 6V 10V ±20V 18 Ω
HUFA76639P3 HUFA76639P3 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube UltraFET™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 180W Tc SWITCHING 0.027Ohm 100V SILICON N-Channel 26m Ω @ 51A, 10V 3V @ 250μA 2.4pF @ 25V 86nC @ 10V 51A 51A Tc 100V 4.5V 10V ±16V
AUIRF7484QTR AUIRF7484QTR Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Last Time Buy 1 (Unlimited) EAR99 ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 9.3 ns 2.5W Ta 14A 180 ns N-Channel 10m Ω @ 14A, 7V 2V @ 250μA 3520pF @ 25V 100nC @ 7V 5ns 58 ns 8V 14A Ta 40V 7V ±8V
IPA65R280C6XKSA1 IPA65R280C6XKSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tube 2008 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant No 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free Single 32W 13 ns 280mOhm TO-220 Full Pack 32W Tc 13.8A 105 ns N-Channel 280mOhm @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 11ns 12 ns 20V 700V 13.8A Tc 650V 950pF 10V ±20V 280 mΩ
IRFBC40PBF IRFBC40PBF Vishay Siliconix 0.0000
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0.00000000 download 11 Weeks Through Hole Tube 2008 Active 1 (Unlimited) 150°C -55°C 10.41mm ROHS3 Compliant Lead Free Tin 6.2A 3 TO-220-3 Unknown 9.01mm 4.7mm 1.2Ohm Through Hole 6.000006g -55°C~150°C TJ 600V MOSFET (Metal Oxide) 62A 1 600V 1 Single 125W 13 ns 4V 1.2Ohm TO-220AB 125W Tc 940 ns 6.2A 55 ns N-Channel 1.2Ohm @ 3.7A, 10V 4V @ 250μA 1300pF @ 25V 60nC @ 10V 18ns 20 ns 20V 600V 4 V 6.2A Tc 600V 1.3nF 10V ±20V 1.2 Ω
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