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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Technology Operating Mode Capacitance JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
BUK724R5-30C,118 BUK724R5-30C,118 Nexperia USA Inc. 2.4865
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0.00000000 download 12 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3 157W Tc N-Channel 4.5m Ω @ 25A, 10V 4V @ 1mA 3760pF @ 25V 62nC @ 10V 75A Tc 30V 10V ±20V
IXTK62N25 IXTK62N25 IXYS 0.0000
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0.00000000 download Through Hole Tube 2004 MegaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 390W 390W Tc 62A SWITCHING 0.035Ohm 115 ns SILICON N-Channel 35m Ω @ 31A, 10V 4V @ 250μA 5400pF @ 25V 240nC @ 10V 25ns 15 ns 20V 250V 62A Tc 248A 1500 mJ 10V ±20V
IXFN73N30Q IXFN73N30Q IXYS 0.0000
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0.00000000 download Chassis Mount Tube 2004 HiPerFET™ yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant 4 AVALANCHE RATED SOT-227-4, miniBLOC Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 500W 481W Tc 73A SWITCHING 82 ns SILICON N-Channel 45m Ω @ 500mA, 10V 4V @ 4mA 5400pF @ 25V 195nC @ 10V 36ns 12 ns 30V 300V 73A Tc 292A 2500 mJ 10V ±30V
AOTF11C60PL AOTF11C60PL Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 16 Weeks Through Hole Tube 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220-3F 37W Tc 11A N-Channel 400mOhm @ 5.5A, 10V 5V @ 250μA 2333pF @ 100V 50nC @ 10V 11A Tc 600V 2.333nF 10V ±30V 400 mΩ
TK16N60W,S1VF TK16N60W,S1VF Toshiba Semiconductor and Storage 7.0918
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant TO-247-3 190mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) 1.35nF Single 160mOhm TO-247 130W Tc 15.8A 100 ns N-Channel 190mOhm @ 7.9A, 10V 3.7V @ 790μA 1350pF @ 300V 38nC @ 10V 25ns 5 ns 30V Super Junction 15.8A Ta 600V 1.35nF 10V ±30V 190 mΩ
IXFX24N100 IXFX24N100 IXYS 15.4471
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0.00000000 download 8 Weeks Through Hole Tube 2008 HiPerFET™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-247-3 390mOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 560W 560W Tc 24A SWITCHING 75 ns SILICON N-Channel 390m Ω @ 12A, 10V 5.5V @ 8mA 8700pF @ 25V 267nC @ 10V 35ns 21 ns 20V 1kV 24A Tc 1000V 96A 10V ±20V
PH8230E,115 PH8230E,115 Nexperia USA Inc. 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 1997 TrenchMOS™ Discontinued 1 (Unlimited) 4 EAR99 150°C -55°C 5mm ROHS3 Compliant Lead Free No 5 SC-100, SOT-669 1.1mm 4.1mm Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING 4 R-PSSO-G4 62.5W IEC-60134 1 DRAIN Single 62.5W 28 ns 67A SWITCHING 0.0132Ohm 33 ns N-Channel 8.2m Ω @ 10A, 10V 2.5V @ 1mA 1400pF @ 10V 14nC @ 5V 44ns 21 ns 20V 30V 67A Tc 268A
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