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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
DMP45H150DHE-13 DMP45H150DHE-13 Diodes Incorporated 0.4311
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0.00000000 download 23 Weeks Tape & Reel (TR) Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 13.9W Tc P-Channel 150 Ω @ 50mA, 10V 4V @ 250μA 59.2pF @ 25V 1.8nC @ 10V 250mA Tc 450V 10V ±30V
VN2222LL-G VN2222LL-G Microchip Technology 0.4499
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0.00000000 download 6 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 10 ns 400mW Ta 1W Tc 230mA SWITCHING 10 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 0.099A 230mA Tj 8 pF 5V 10V ±30V
IRF7425TR IRF7425TR Infineon Technologies 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant Contains Lead -15A 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta 15A SWITCHING SILICON P-Channel 8.2m Ω @ 15A, 4.5V 1.2V @ 250μA 7980pF @ 15V 130nC @ 4.5V 20ns 15A Ta 20V 60A 2.5V 4.5V ±12V
BSS138L BSS138L ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 2 days ago) Surface Mount Tape & Reel (TR) 2012 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.11mm Surface Mount 30mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Powers Not Qualified 1 Single 225mW 20 ns 1.25V 350mW Ta 200mA 150°C SWITCHING 20 ns SILICON N-Channel 3.5 Ω @ 200mA, 5V 1.5V @ 1mA 50pF @ 25V 2.4nC @ 10V 1.8ns 5.1 ns 20V 50V 0.2A 200mA Ta 5 pF 2.75V 5V ±20V
BSH205,215 BSH205,215 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 1998 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e3 Tin (Sn) DUAL GULL WING 260 40 3 YES R-PDSO-G3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 417mW Ta SWITCHING 0.5Ohm 12V SILICON P-Channel 400m Ω @ 430mA, 4.5V 680mV @ 1mA 200pF @ 9.6V 3.8nC @ 4.5V 0.75A 750mA Ta 12V 1.8V 4.5V ±8V
DMN2400UFB4-7B DMN2400UFB4-7B Diodes Incorporated 0.0000
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0.00000000 download 40 Weeks Tape & Reel (TR) 2011 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 HIGH RELIABILITY, LOW THRESHOLD DFN No SVHC ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) BOTTOM NO LEAD 260 40 3 YES 150°C FET General Purpose Power Not Qualified AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 0.47W 750mA SWITCHING 0.55Ohm METAL-OXIDE SEMICONDUCTOR SILICON 0.75A 20V
MCP87030T-U/MF MCP87030T-U/MF Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2002 Obsolete 1 (Unlimited) EAR99 5mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87030 YES FET General Purpose Powers Single 2.2W 5 ns 1.3V 2.2W Ta 100A 14 ns N-Channel 3.5m Ω @ 20A, 10V 1.6V @ 250μA 1635pF @ 12.5V 22nC @ 4.5V 17ns 16 ns 10V 25V 1.3 V 100A Tc 4.5V 10V +10V, -8V
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