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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Voltage - Rated Additional Feature Package / Case Reach Compliance Code Frequency Width Mounting Type Operating Temperature Technology Operating Mode Height Seated (Max) HTS Code Number of Functions JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount Terminal Pitch JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Rep Pk Reverse Voltage-Max JEDEC-95 Code Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Source Url Status Check Date Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Current - Test Transistor Type Voltage - Test Power - Output Power Dissipation Ambient-Max Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Output Voltage 1 Input Voltage (Min) Input Voltage (Max) Output Voltage1-Max Output Voltage1-Min Regulator Type Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Collector-Base Capacitance-Max
BC368,112 BC368,112 NXP USA Inc. 0.0000
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0.00000000 download Bulk 2000 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) unknown Through Hole 150°C TJ 8541.21.00.75 e3 TIN BOTTOM 250 40 BC368 3 NO O-PBCY-T3 Other Transistors Not Qualified 830mW 1 SINGLE NPN 0.83W SWITCHING SILICON NPN 170MHz 100nA ICBO 0.5 V 20V 1A 85 @ 500mA 1V 500mV @ 100mA, 1A 170MHz 40pF
2PC1815GR,116 2PC1815GR,116 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1996 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.95 BOTTOM 2PC1815 3 NO O-PBCY-T3 Not Qualified 500mW 1 SINGLE NPN SWITCHING SILICON NPN 80MHz 100nA ICBO 0.3 V 50V 150mA 200 @ 2mA 6V 300mV @ 10mA, 100mA 80MHz 3.5pF
BUK762R6-40E/GFJ BUK762R6-40E/GFJ NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) ROHS3 Compliant
BUK9523-75A,127 BUK9523-75A,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 138W Tc SWITCHING 0.026Ohm 75V SILICON N-Channel 22m Ω @ 25A, 10V 2V @ 1mA 3120pF @ 25V 53A 53A Tc 75V 213A 120 mJ 4.5V 10V ±10V
PHP119NQ06T,127 PHP119NQ06T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W Tc SWITCHING 0.0071Ohm 55V SILICON N-Channel 7.1m Ω @ 25A, 10V 4V @ 1mA 2820pF @ 25V 53nC @ 10V 75A 75A Tc 55V 240A 280 mJ 10V ±20V
BUK9832-55A,115 BUK9832-55A,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) DUAL GULL WING 260 40 4 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 8W Tc SWITCHING 0.036Ohm 55V SILICON N-Channel 29m Ω @ 8A, 10V 2V @ 1mA 1594pF @ 25V 12A 12A Tc 55V 47A 100 mJ 4.5V 10V ±10V
BC337-25,126 BC337-25,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 2009 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 150°C TJ e3 TIN BOTTOM 250 40 BC337 3 NO O-PBCY-T3 Not Qualified 625mW 1 SINGLE NPN SWITCHING SILICON NPN 100MHz 100nA ICBO 45V 500mA 160 @ 100mA 1V 700mV @ 50mA, 500mA 100MHz
BUK7Y41-80E/GFX BUK7Y41-80E/GFX NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
IRF530N,127 IRF530N,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 79W Tc SWITCHING 0.11Ohm 100V SILICON N-Channel 110m Ω @ 9A, 10V 4V @ 1mA 633pF @ 25V 40nC @ 10V 17A 17A Tc 100V 68A 150 mJ 10V ±20V
BUK761R4-30E,118 BUK761R4-30E,118 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2012 TrenchMOS™ Obsolete 1 (Unlimited) 2 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 3 YES R-PSSO-G2 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 324W Tc SWITCHING 0.00145Ohm 30V SILICON N-Channel 1.45m Ω @ 25A, 10V 4V @ 1mA 9580pF @ 25V 130nC @ 10V 120A 120A Tc 30V 1425A 1096 mJ 10V ±20V
BUK9C5R3-100EJ BUK9C5R3-100EJ NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount MOSFET (Metal Oxide) N-Channel 100V
BUK98150-55,135 BUK98150-55,135 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1998 TrenchMOS™ yes Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, ESD PROTECTED TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) DUAL GULL WING 260 40 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 8.3W Tc SWITCHING 0.15Ohm 55V SILICON N-Channel 150m Ω @ 5A, 5V 2V @ 1mA 330pF @ 25V 2.6A 5.5A Tc 55V 30A 15 mJ 5V ±10V
PMBT2907A/MIGR PMBT2907A/MIGR NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant
MRFE6S9060GNR1 MRFE6S9060GNR1 NXP USA Inc. 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 3 (168 Hours) ROHS3 Compliant 66V TO-270BB 880MHz MRFE6S9060 21.1dB 450mA LDMOS 28V 14W
BUK9535-55,127 BUK9535-55,127 NXP USA Inc. 2.6843
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0.00000000 download Tube 1998 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-220AB 85W Tc N-Channel 35mOhm @ 17A, 5V 2V @ 1mA 1400pF @ 25V 34A Tc 55V 5V ±10V
BUK962R1-40E,118 BUK962R1-40E,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2012 TrenchMOS™ Obsolete 1 (Unlimited) 2 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 3 YES R-PSSO-G2 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 293W Tc SWITCHING 0.0021Ohm 40V SILICON N-Channel 1.8m Ω @ 25A, 10V 2.1V @ 1mA 13160pF @ 25V 87.8nC @ 5V 120A 120A Tc 40V 1078A 622 mJ 5V 10V ±10V
MRF1570FNT1 MRF1570FNT1 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2003 Obsolete 3 (168 Hours) 8 EAR99 ROHS3 Compliant 40V TO-272-8 470MHz ENHANCEMENT MODE 8541.21.00.75 e3 Matte Tin (Sn) DUAL FLAT 260 40 MRF1570 YES R-PDFM-F8 200°C FET General Purpose Power Not Qualified 11.5dB 2 COMMON SOURCE, 2 ELEMENTS SOURCE N-CHANNEL 165W AMPLIFIER 40V METAL-OXIDE SEMICONDUCTOR SILICON 800mA LDMOS 12.5V 70W
BZX84-B36/LF1R BZX84-B36/LF1R NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) Automotive, AEC-Q101 Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -65°C~150°C 250mW ±2% TO-236AB (SOT23) 50nA @ 25.2V 900mV @ 10mA 90Ohms 36V
PHP110NQ08T,127 PHP110NQ08T,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1997 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 230W Tc SWITCHING 0.009Ohm 75V SILICON N-Channel 9m Ω @ 25A, 10V 4V @ 1mA 4860pF @ 25V 113.1nC @ 10V 75A 75A Tc 75V 440A 560 mJ 10V ±20V
MRF5S19100HR5 MRF5S19100HR5 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2005 Obsolete 3 (168 Hours) ROHS3 Compliant 65V NI-780 1.93GHz~1.99GHz MRF5S19100 13.9dB 1A LDMOS 28V 22W
MPSA92,412 MPSA92,412 NXP USA Inc. 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM NOT SPECIFIED NOT SPECIFIED MPSA92 3 NO O-PBCY-T3 Other Transistors Not Qualified 625mW 1 SINGLE PNP 0.625W SWITCHING SILICON PNP 50MHz 250nA ICBO 0.5 V 300V 100mA 25 @ 30mA 10V 500mV @ 2mA, 20mA 50MHz 6pF
MRF6S9045NBR1 MRF6S9045NBR1 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2006 Obsolete 3 (168 Hours) ROHS3 Compliant 68V TO-272BC not_compliant 880MHz e3 Matte Tin (Sn) MRF6S9045 22.7dB 350mA LDMOS 28V 10W
BUK7L06-34ARC,127 BUK7L06-34ARC,127 NXP USA Inc. 0.6403
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0.00000000 download Tube 2005 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR TO-220AB DRAIN 250W Tc SWITCHING 0.006Ohm 34V SILICON N-Channel 6m Ω @ 30A, 10V 3.8V @ 1mA 4533pF @ 25V 82nC @ 10V 75A 75A Tc 34V 590A 1000 mJ 10V ±20V
AFT05MS031GNR1 AFT05MS031GNR1 NXP USA Inc. 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) 2009 Active 3 (168 Hours) EAR99 ROHS3 Compliant 40V TO-270BA 520MHz 8541.29.00.40 e3 Matte Tin (Sn) 260 40 AFT05MS031 YES 150°C FET General Purpose Power 17.7dB Single N-CHANNEL 294W METAL-OXIDE SEMICONDUCTOR 10mA LDMOS 13.6V 31W
2PB710ASL/ZLR 2PB710ASL/ZLR NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
PZT3906,115 PZT3906,115 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1999 yes Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount 150°C TJ e3 TIN DUAL GULL WING NOT SPECIFIED NOT SPECIFIED PZT3906 4 YES R-PDSO-G4 Not Qualified 1.05W 1 SINGLE COLLECTOR PNP SWITCHING SILICON PNP 1.5W 65ns 250MHz 300ns 50nA ICBO 0.4 V 40V 100mA 100 @ 10mA 1V 200mV @ 5mA, 50mA 250MHz 4.5pF
BC546B,126 BC546B,126 NXP USA Inc. 0.0000
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0.00000000 download Tape & Box (TB) 1999 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) unknown Through Hole 150°C TJ 8541.21.00.95 e3 Matte Tin (Sn) BOTTOM 250 40 BC546 3 NO O-PBCY-T3 Other Transistors Not Qualified 500mW 1 SINGLE NPN 0.625W SWITCHING 2013-06-14 00:00:00 SILICON NPN 100MHz 15nA ICBO 0.6 V 65V 100mA 200 @ 2mA 5V 400mV @ 5mA, 100mA 100MHz
PRLL5817,135 PRLL5817,135 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant SOD-87 Surface Mount 8541.10.00.80 END WRAP AROUND PRLL5817 2 YES O-LELF-R2 125°C Not Qualified SILICON 1 SINGLE Schottky 1A 20V ISOLATED Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 20V 450mV @ 1A 125°C Max 20V 1A 70pF @ 4V 1MHz 2013-06-14 00:00:00
PVR100AD-B12V,115 PVR100AD-B12V,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2006 yes Obsolete 1 (Unlimited) 6 2.9mm ROHS3 Compliant SC-74, SOT-457 1.5mm Surface Mount 150°C TJ 1.1mm 8541.21.00.75 1 e3 TIN DUAL GULL WING 260 40 PVR100A 6 YES 0.95mm R-PDSO-G6 Not Qualified 300mW NPN + Zener 100nA ICBO 45V 100mA 12.3V 14V 40V 13.2V 11.4V FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR 160 @ 100mA 1V
IRF640,127 IRF640,127 NXP USA Inc. 0.0000
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0.00000000 download Tube 1999 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 136W Tc SWITCHING 0.18Ohm 200V SILICON N-Channel 180m Ω @ 8A, 10V 4V @ 1mA 1850pF @ 25V 63nC @ 10V 16A 16A Tc 200V 64A 580 mJ 10V ±20V
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