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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Max Power Dissipation Reference Standard Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Polarity Forward Voltage Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Non-Repetitive Surge Current Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Power Dissipation-Max Reverse Voltage Forward Voltage-Max Max Collector Current Reverse Recovery Time-Max Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max Voltage - Collector Emitter Breakdown (Max) Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy
DHG50X600NA DHG50X600NA IXYS 0.0000
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0.00000000 32 Weeks Chassis Mount Tube Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE, UL RECOGNIZED SOT-227-4, miniBLOC Chassis Mount AVALANCHE UPPER UNSPECIFIED R-PUFM-X4 150°C -40°C IEC-60747 SILICON 2 Standard FAST SOFT RECOVERY 1 200A ISOLATED Standard Recovery >500ns, > 200mA (Io) 600V 50A 2 Independent 600V 100μA 105W 2.88V 0.035μs
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0.00000000 download Chassis Mount, Screw Bulk 2002 yes Active 1 (Unlimited) 3 EAR99 180°C -40°C ROHS3 Compliant 3 Module Chassis Mount 8541.10.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED HTZ250 3 Not Qualified SILICON 2 Standard HIGH VOLTAGE 1 32V Standard Recovery >500ns, > 200mA (Io) 500μA @ 44800V 32V @ 12A 44.8kV 2.7A 200A 1 Pair Series Connection 44800V 44.8kV
IXFH12N90 IXFH12N90 IXYS 1.0146
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 3 ROHS3 Compliant Lead Free 12A No 3 AVALANCHE RATED TO-247-3 900mOhm Through Hole -55°C~150°C TJ 900V MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 TO-247AD DRAIN Single 300W 300W Tc 12A SWITCHING 51 ns SILICON N-Channel 900m Ω @ 6A, 10V 4.5V @ 4mA 4200pF @ 25V 155nC @ 10V 12ns 18 ns 20V 900V 12A Tc 48A 10V ±20V
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0.00000000 download 24 Weeks Tube Polar™ Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 86W Tc N-Channel 13 Ω @ 700mA, 10V 4.5V @ 100μA 666pF @ 25V 24.8nC @ 10V 1.4A Tc 1200V 10V ±30V
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0.00000000 download Through Hole Tube 2001 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-3P-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 DRAIN Single 300W 300W Tc 36A SWITCHING 0.07Ohm 110 ns SILICON N-Channel 70m Ω @ 18A, 10V 4V @ 4mA 2970pF @ 25V 140nC @ 10V 130ns 98 ns 20V 200V 36A Tc 144A 10V ±20V
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0.00000000 download 24 Weeks TrenchT4™ Active TO-263-7, D2Pak (6 Leads + Tab) compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc N-Channel 1m Ω @ 100A, 10V 4V @ 250μA 13400pF @ 25V 260nC @ 10V 380A Tc 36V 10V ±15V
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0.00000000 download Through Hole Tube 2003 MegaMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-264-3, TO-264AA unknown 20MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 730W 730W Tc 120A SWITCHING 175 ns SILICON N-Channel 20m Ω @ 500mA, 10V 4V @ 250μA 7700pF @ 25V 360nC @ 10V 38ns 35 ns 20V 250V 120A Tc 480A 4000 mJ 10V ±20V
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0.00000000 download Tube HiPerFET™ yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant TO-204AE Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM PIN/PEG NOT SPECIFIED NOT SPECIFIED 2 NO O-MBFM-P2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.05Ohm 600V SILICON N-Channel 500m Ω @ 7.5A, 10V 4.5V @ 4mA 4500pF @ 25V 170nC @ 10V 15A 15A Tc 600V 60A 10V ±20V
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0.00000000 download 28 Weeks Surface Mount Tube 2006 PolarHT™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 300W 300W Tc 42A SWITCHING 0.084Ohm 81 ns SILICON N-Channel 84m Ω @ 500mA, 10V 5.5V @ 250μA 2300pF @ 25V 70nC @ 10V 28ns 30 ns 20V 250V 42A Tc 110A 1000 mJ 10V ±20V
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0.00000000 download 24 Weeks Tube 2015 Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Variant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 520W Tc N-Channel 21 Ω @ 1A, 10V 5V @ 250μA 1890pF @ 25V 73nC @ 10V 2A Tc 3000V 10V ±20V
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0.00000000 download 32 Weeks Through Hole Tube 2009 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 TO-220-3 Full Pack, Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB Single 33W 7.6A SWITCHING 0.2Ohm 50 ns SILICON N-Channel 200m Ω @ 10A, 10V 3.5V @ 1.1mA 1520pF @ 100V 30nC @ 10V 5ns 5 ns 20V 600V Super Junction 7.6A Tc 10V ±20V
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0.00000000 download 28 Weeks Through Hole Tube 2008 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 i4-Pac™-5 (3 Leads) No SVHC Through Hole -55°C~150°C TJ Standard e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED IXG*32N170 3 Insulated Gate BIP Transistors Not Qualified 200W 1 NPN ISOLATED Single 200W 44A 1.7kV 1.7kV POWER CONTROL SILICON 2.7V 90 ns 3.5V @ 15V, 32A 920 ns NPT 20V 1700V 5V 500ns 1020V, 32A, 2.7 Ω, 15V 146nC 200A 45ns/270ns 10.6mJ (off)
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0.00000000 download 26 Weeks Through Hole Tube 2008 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 R-PSFM-T3 FET General Purpose Power 1 TO-220AB DRAIN Single 250W 250W Tc 5A SWITCHING SILICON N-Channel 2.8 Ω @ 500mA, 10V 6V @ 250μA 1830pF @ 25V 33.4nC @ 10V 30V 1kV 5A 5A Tc 1000V 300 mJ 10V ±30V
MMIX1F160N30T MMIX1F160N30T IXYS 0.0000
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0.00000000 download 30 Weeks Surface Mount Tube 2012 GigaMOS™, HiPerFET™, TrenchT2™ Active 1 (Unlimited) 21 EAR99 25.25mm ROHS3 Compliant 21 AVALANCHE RATED 24-PowerSMD, 21 Leads 5.7mm 23.25mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 21 FET General Purpose Power 1 ISOLATED Single 570W 34 ns 570W Tc 102A SWITCHING 0.02Ohm 300V 90 ns SILICON N-Channel 20m Ω @ 60A, 10V 5V @ 8mA 2800pF @ 25V 335nC @ 10V 20V 102A Tc 300V 440A 3000 mJ 10V ±20V
DCG10P1200HR DCG10P1200HR IXYS 0.0000
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0.00000000 20 Weeks Tube Active TO-247-3 Through Hole NOT SPECIFIED NOT SPECIFIED Schottky Fast Recovery =< 500ns, > 200mA (Io) 250μA @ 1200V 1.8V @ 10A -40°C~150°C 1200V 12.5A 755pF @ 0V 1MHz
IXFB80N50Q2 IXFB80N50Q2 IXYS 15.6985
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0.00000000 download 8 Weeks Through Hole Tube 2007 HiPerFET™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA 60mOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 DRAIN Single 960W 960W Tc 80A SWITCHING 60 ns SILICON N-Channel 60m Ω @ 500mA, 10V 5.5V @ 8mA 15000pF @ 25V 250nC @ 10V 25ns 11 ns 30V 500V 80A Tc 5000 mJ 10V ±30V
IXFL44N60 IXFL44N60 IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 1 (Unlimited) 3 20.29mm ROHS3 Compliant 264 AVALANCHE RATED ISOPLUS264™ 26.42mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 ISOLATED Single 500W 42 ns 500W Tc 41A SWITCHING 0.13Ohm 110 ns SILICON N-Channel 130m Ω @ 22A, 10V 4.5V @ 8mA 8900pF @ 25V 330nC @ 10V 55ns 45 ns 20V 600V 41A Tc 176A 3000 mJ 10V ±20V
IXFX26N60Q IXFX26N60Q IXYS 0.0000
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0.00000000 download Through Hole Bulk 2002 HiPerFET™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 360W 360W Tc 26A 0.25Ohm 80 ns SILICON N-Channel 250m Ω @ 13A, 10V 4.5V @ 4mA 5100pF @ 25V 200nC @ 10V 32ns 16 ns 20V 600V 26A Tc 104A 1500 mJ 10V ±20V
W1524LC300 W1524LC300 IXYS 0.0000
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0.00000000 8 Weeks Bulk Active 1 (Unlimited) ROHS3 Compliant DO-200AB, B-PUK Chassis Mount Standard W4 Standard Recovery >500ns, > 200mA (Io) 30mA @ 3000V 1.87V @ 3090A -30°C~160°C 3000V 1524A
IXFR40N50Q2 IXFR40N50Q2 IXYS 0.0000
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0.00000000 download Through Hole Tube 2004 HiPerFET™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 29A 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS247™ 170MOhm Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 320W 320W Tc 29A SWITCHING 42 ns SILICON N-Channel 170m Ω @ 20A, 10V 5V @ 4mA 4200pF @ 25V 110nC @ 10V 13ns 8 ns 30V 500V 29A Tc 160A 2500 mJ 10V ±30V
IXFA72N20X3 IXFA72N20X3 IXYS 8.4239
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0.00000000 download 19 Weeks HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 320W Tc N-Channel 20m Ω @ 36A, 10V 4.5V @ 1.5mA 3780pF @ 25V 55nC @ 10V 72A Tc 200V 10V ±20V
IXTP160N10T IXTP160N10T IXYS 4.4621
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0.00000000 download 17 Weeks Through Hole Tube 2006 TrenchMV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 3 R-PSFM-T3 FET General Purpose Powers 1 TO-220AB DRAIN Single 430W 430W Tc 160A SWITCHING 0.007Ohm 49 ns SILICON N-Channel 7m Ω @ 25A, 10V 4.5V @ 250μA 6600pF @ 25V 132nC @ 10V 61ns 42 ns 100V 160A Tc 430A 500 mJ 10V ±30V
IXFK210N30X3 IXFK210N30X3 IXYS 0.0000
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0.00000000 download 19 Weeks Tube HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1250W Tc N-Channel 5.5m Ω @ 105A, 10V 4.5V @ 8mA 24.2nF @ 25V 375nC @ 10V 210A Tc 300V 10V ±20V
IXFR15N100Q3 IXFR15N100Q3 IXYS 17.4647
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0.00000000 download 30 Weeks Through Hole Tube 2011 HiPerFET™ Active 1 (Unlimited) 3 16.13mm ROHS3 Compliant 247 AVALANCHE RATED, UL RECOGNIZED TO-247-3 unknown 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 R-PSIP-T3 FET General Purpose Power 1 ISOLATED Single 400W 28 ns 400W Tc 10A SWITCHING 30 ns SILICON N-Channel 1.2 Ω @ 7.5A, 10V 6.5V @ 4mA 3250pF @ 25V 64nC @ 10V 250ns 30V 1kV 10A Tc 1000V 45A 1000 mJ 10V ±30V
IXFT58N20 IXFT58N20 IXYS 0.0000
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0.00000000 download 26 Weeks Surface Mount Tube 2000 HiPerFET™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 40MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 58A SWITCHING 72 ns SILICON N-Channel 40m Ω @ 29A, 10V 4V @ 4mA 4400pF @ 25V 220nC @ 10V 15ns 16 ns 20V 200V 58A Tc 232A 10V ±20V
MMIX1T660N04T4 MMIX1T660N04T4 IXYS 0.0000
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0.00000000 28 Weeks Active 24-PowerSMD, 21 Leads compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 830W Tc N-Channel 850μ Ω @ 100A, 10V 4V @ 250μA 44000pF @ 25V 860nC @ 10V 660A Tc 40V 10V ±15V
IXFR140N20P IXFR140N20P IXYS 0.0000
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0.00000000 download 30 Weeks Through Hole Tube 2006 PolarHT™ HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 247 AVALANCHE RATED, UL RECOGNIZED ISOPLUS247™ No SVHC 22MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 R-PSIP-T3 1 ISOLATED Single 300W 5V 300W Tc 90A SWITCHING 2.5kV 150 ns SILICON N-Channel 22m Ω @ 45A, 10V 5V @ 4mA 7500pF @ 25V 240nC @ 10V 35ns 90 ns 20V 200V 90A Tc 280A 4000 mJ 10V ±20V
IXFX32N80Q3 IXFX32N80Q3 IXYS 26.3088
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0.00000000 download 30 Weeks Through Hole Tube 2012 HiPerFET™ Active 1 (Unlimited) 3 16.13mm ROHS3 Compliant Lead Free No 247 AVALANCHE RATED TO-247-3 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 R-PSIP-T3 FET General Purpose Power 1 DRAIN Single 1kW 38 ns 1000W Tc 32A SWITCHING 0.27Ohm 45 ns SILICON N-Channel 270m Ω @ 16A, 10V 6.5V @ 4mA 6940pF @ 25V 140nC @ 10V 300ns 30V 800V 32A Tc 80A 3000 mJ 10V ±30V
  • DHG50X600NA
    DHG50X600NA IXYS

    Standard Rectifier Diode 2 Independent Standard Recovery >500ns, > 200mA (Io) 50A 600V-DC 2-Element SOT-227-4, miniBLOC Chassis Mount

    Price: 0.0000

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  • HTZ250G44K
    HTZ250G44K IXYS

    Standard Rectifier Diode 1 Pair Series Connection Standard Recovery >500ns, > 200mA (Io) 2.7A 44.8kV-DC 2-Element Module Chassis Mount

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  • IXFH12N90
    IXFH12N90 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 900m Ω @ 6A, 10V ±20V 4200pF @ 25V 155nC @ 10V TO-247-3

    Price: 1.0146

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  • IXTY1R4N120PHV
    IXTY1R4N120PHV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 13 Ω @ 700mA, 10V ±30V 666pF @ 25V 24.8nC @ 10V 1200V TO-252-3, DPak (2 Leads + Tab), SC-63

    Price: 3.4477

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  • IXTJ36N20
    IXTJ36N20 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 70m Ω @ 18A, 10V ±20V 2970pF @ 25V 140nC @ 10V TO-3P-3 Full Pack

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  • IXTA380N036T4-7
    IXTA380N036T4-7 IXYS

    MOSFET (Metal Oxide) N-Channel 1m Ω @ 100A, 10V ±15V 13400pF @ 25V 260nC @ 10V 36V TO-263-7, D2Pak (6 Leads + Tab)

    Price: 0.0000

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  • IXFA18N60X
    IXFA18N60X IXYS

    MOSFET (Metal Oxide) N-Channel Tube 230m Ω @ 9A, 10V ±30V 1440pF @ 25V 35nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 0.0000

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  • IXTK120N25
    IXTK120N25 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 500mA, 10V ±20V 7700pF @ 25V 360nC @ 10V TO-264-3, TO-264AA

    Price: 53.0431

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  • FMD80-0045PS
    FMD80-0045PS IXYS

    MOSFET (Metal Oxide) N-Channel Tube 4.9m Ω @ 110A, 10V ±20V 86nC @ 10V 55V i4-Pac™-5

    Price: 0.0000

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  • IXFM15N60
    IXFM15N60 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 500m Ω @ 7.5A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-204AE

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  • IXTA42N25P
    IXTA42N25P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 6.6610

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  • IXTH2N300P3HV
    IXTH2N300P3HV IXYS

    MOSFET (Metal Oxide) N-Channel Tube 21 Ω @ 1A, 10V ±20V 1890pF @ 25V 73nC @ 10V 3000V TO-247-3 Variant

    Price: 0.0000

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  • IXKP20N60C5M
    IXKP20N60C5M IXYS

    MOSFET (Metal Oxide) N-Channel Tube 200m Ω @ 10A, 10V ±20V 1520pF @ 100V 30nC @ 10V TO-220-3 Full Pack, Isolated Tab

    Price: 0.0000

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  • IXGF32N170
    IXGF32N170 IXYS

    IXGF32N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel

    Price: 48.0606

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  • IXFP5N100P
    IXFP5N100P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 2.8 Ω @ 500mA, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-220-3

    Price: 0.0000

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  • MMIX1F160N30T
    MMIX1F160N30T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 60A, 10V ±20V 2800pF @ 25V 335nC @ 10V 300V 24-PowerSMD, 21 Leads

    Price: 0.0000

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  • DCG10P1200HR
    DCG10P1200HR IXYS

    Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.8V @ 10A -40°C~150°C 250μA @ 1200V Tube TO-247-3 Through Hole

    Price: 0.0000

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  • IXFB80N50Q2
    IXFB80N50Q2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 60m Ω @ 500mA, 10V ±30V 15000pF @ 25V 250nC @ 10V TO-264-3, TO-264AA

    Price: 15.6985

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  • IXFL44N60
    IXFL44N60 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 130m Ω @ 22A, 10V ±20V 8900pF @ 25V 330nC @ 10V ISOPLUS264™

    Price: 0.0000

    RFQ
  • IXFX26N60Q
    IXFX26N60Q IXYS

    MOSFET (Metal Oxide) N-Channel Bulk 250m Ω @ 13A, 10V ±20V 5100pF @ 25V 200nC @ 10V TO-247-3

    Price: 0.0000

    RFQ
  • W1524LC300
    W1524LC300 IXYS

    Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.87V @ 3090A -30°C~160°C 30mA @ 3000V Bulk DO-200AB, B-PUK Chassis Mount

    Price: 0.0000

    RFQ
  • IXFR40N50Q2
    IXFR40N50Q2 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 170m Ω @ 20A, 10V ±30V 4200pF @ 25V 110nC @ 10V ISOPLUS247™

    Price: 0.0000

    RFQ
  • IXFA72N20X3
    IXFA72N20X3 IXYS

    MOSFET (Metal Oxide) N-Channel 20m Ω @ 36A, 10V ±20V 3780pF @ 25V 55nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    Price: 8.4239

    RFQ
  • IXTP160N10T
    IXTP160N10T IXYS

    MOSFET (Metal Oxide) N-Channel Tube 7m Ω @ 25A, 10V ±30V 6600pF @ 25V 132nC @ 10V TO-220-3

    Price: 4.4621

    RFQ
  • IXFK210N30X3
    IXFK210N30X3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 105A, 10V ±20V 24.2nF @ 25V 375nC @ 10V 300V TO-264-3, TO-264AA

    Price: 0.0000

    RFQ
  • IXFR15N100Q3
    IXFR15N100Q3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 1.2 Ω @ 7.5A, 10V ±30V 3250pF @ 25V 64nC @ 10V 1000V TO-247-3

    Price: 17.4647

    RFQ
  • IXFT58N20
    IXFT58N20 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 29A, 10V ±20V 4400pF @ 25V 220nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

    Price: 0.0000

    RFQ
  • MMIX1T660N04T4
    MMIX1T660N04T4 IXYS

    MOSFET (Metal Oxide) N-Channel 850μ Ω @ 100A, 10V ±15V 44000pF @ 25V 860nC @ 10V 40V 24-PowerSMD, 21 Leads

    Price: 0.0000

    RFQ
  • IXFR140N20P
    IXFR140N20P IXYS

    MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 45A, 10V ±20V 7500pF @ 25V 240nC @ 10V ISOPLUS247™

    Price: 0.0000

    RFQ
  • IXFX32N80Q3
    IXFX32N80Q3 IXYS

    MOSFET (Metal Oxide) N-Channel Tube 270m Ω @ 16A, 10V ±30V 6940pF @ 25V 140nC @ 10V TO-247-3

    Price: 26.3088

    RFQ
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