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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current HTS Code Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Power - Max Voltage Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Polarity Forward Current Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Critical Rate of Rise of Off-State Voltage-Min Holding Current-Max Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Current - Test Transistor Type Voltage - Test Power - Output Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage NTC Thermistor VCEsat-Max Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Circuit Commutated Turn-off Time-Nom Repetitive Peak Off-state Leakage Current-Max Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
STB13N80K5 STB13N80K5 STMicroelectronics 0.0000
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0.00000000 download 16 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube MDmesh™ II Active 1 (Unlimited) 3 EAR99 15.75mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.15mm 5.15mm 190mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE STW23N 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 125W 6.6 ns 3V 125W Tc 17A SWITCHING 500V 71 ns SILICON N-Channel 190m Ω @ 8.5A, 10V 4V @ 250μA 1330pF @ 50V 45nC @ 10V 19ns 29 ns 25V 17A Tc 500V 68A 254 mJ 10V ±25V
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0.00000000 17 Weeks Active
BD677 BD677 STMicroelectronics 0.0000
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