Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
RFQ

Min: 1

Mult: 1

IRL3302SPBF IRL3302SPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 39A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) 1 Single 57W 23mOhm D2PAK 57W Tc 39A 41 ns N-Channel 20mOhm @ 23A, 7V 700mV @ 250μA 1300pF @ 15V 31nC @ 4.5V 110ns 89 ns 10V 20V 700 mV 39A Tc 20V 1.3nF 4.5V 7V ±10V 20 mΩ
IRFH5300TR2PBF IRFH5300TR2PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Cut Tape (CT) 2009 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant No 8 8-PowerVDFN No SVHC 838.2μm 5.0038mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 3.6W 26 ns 1.8V 1.4mOhm PQFN (5x6) Single Die 51 ns 100A 31 ns N-Channel 1.4mOhm @ 50A, 10V 2.35V @ 150μA 7200pF @ 15V 120nC @ 10V 30ns 13 ns 20V 30V 1.8 V 40A Ta 100A Tc 30V 7.2nF 1.4 mΩ
IRF3205STRR IRF3205STRR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) 2002 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN 200W Tc SWITCHING 0.008Ohm 55V SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 75A 110A Tc 55V 390A 264 mJ 10V ±20V
IPU80R2K8CEBKMA1 IPU80R2K8CEBKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2008 CoolMOS™ Discontinued 1 (Unlimited) 150°C -55°C 6.73mm ROHS3 Compliant Contains Lead 3 TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.41mm Through Hole 343.085929mg -55°C~150°C TJ MOSFET (Metal Oxide) 1 Not Halogen Free Single 25 ns 800V 2.8Ohm PG-TO251-3 42W Tc 1.9A 72 ns N-Channel 2.8Ohm @ 1.1A, 10V 3.9V @ 120μA 290pF @ 100V 12nC @ 10V 15ns 18 ns 30V 1.9A Tc 800V 290pF 10V ±20V 2.8 Ω
IRFR120ZTR IRFR120ZTR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 35W Tc SWITCHING 0.19Ohm 100V SILICON N-Channel 190m Ω @ 5.2A, 10V 4V @ 250μA 310pF @ 25V 10nC @ 10V 8.7A 8.7A Tc 100V 35A 18 mJ 10V ±20V
IPS65R1K0CEAKMA2 IPS65R1K0CEAKMA2 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tube 2008 CoolMOS™ CE Active 1 (Unlimited) ROHS3 Compliant TO-251-3 Stub Leads, IPak Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 68W Tc N-Channel 1 Ω @ 1.5A, 10V 3.5V @ 200μA 328pF @ 100V 15.3nC @ 10V 7.2A Tc 650V 10V ±20V
ISP12DP06NMXTSA1 ISP12DP06NMXTSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 10 Weeks Tape & Reel (TR) OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1.8W Ta 4.2W Tc P-Channel 125m Ω @ 2.8A, 10V 4V @ 520μA 790pF @ 30V 20.2nC @ 10V 2.8A Ta 60V 10V ±20V
IPC171N04NX1SA1 IPC171N04NX1SA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Bulk 2013 OptiMOS™ Not For New Designs 1 (Unlimited) ROHS3 Compliant Lead Free Die Surface Mount MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Halogen Free N-Channel 100m Ω @ 2A, 10V 4V @ 150μA 1A Tj 40V 10V
IRF6716MTRPBF IRF6716MTRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 5 DirectFET™ Isometric MX No SVHC 506μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 78W 26 ns 1.9V 3.6W Ta 78W Tc 39A SWITCHING 0.0016Ohm 25 ns SILICON N-Channel 1.6m Ω @ 40A, 10V 2.4V @ 100μA 5150pF @ 13V 59nC @ 4.5V 105ns 41 ns 20V 25V 180A 39A Ta 180A Tc 320A 330 mJ 4.5V 10V ±20V
AUIRLZ44ZS AUIRLZ44ZS Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount, Through Hole Tube 2004 Obsolete 1 (Unlimited) 175°C -55°C 10.67mm RoHS Compliant 3 TO-220AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ 80W Single 80W 14 ns 13.5mOhm 51A 25 ns 160ns 42 ns 16V 55V 55V 1.62nF 4.5V 10V ±16V
SPS03N60C3BKMA1 SPS03N60C3BKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2006 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-251AA 38W Tc 600V SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3.2A 3.2A Tc 650V 9.6A 100 mJ 10V ±20V
BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin No 8 AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.56W 7.8 ns 30V 1.56W Ta 10A SWITCHING 9.5 ns SILICON N-Channel 11m Ω @ 12.1A, 10V 2V @ 250μA 1500pF @ 15V 20nC @ 10V 4.4ns 4.4 ns 20V 10A Ta 20 mJ 4.5V 10V ±20V
IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 55V 100W Tc 30A SILICON N-Channel 23m Ω @ 22A, 10V 2V @ 50μA 1091pF @ 25V 42nC @ 10V 30A Tc 120A 150 mJ 4.5V 10V ±20V
IPD78CN10NGBUMA1 IPD78CN10NGBUMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Tape & Reel (TR) 2013 OptiMOS™ no Obsolete 3 (168 Hours) 2 EAR99 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 31W Tc SWITCHING 0.078Ohm 100V SILICON N-Channel 78m Ω @ 13A, 10V 4V @ 12μA 716pF @ 50V 11nC @ 10V 13A 13A Tc 100V 52A 17 mJ 10V ±20V
IPP060N06NAKSA1 IPP060N06NAKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 13 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 83W 60V 3W Ta 83W Tc 45A SWITCHING 0.006Ohm 20 ns SILICON N-Channel 6m Ω @ 45A, 10V 2.8V @ 36μA 2000pF @ 30V 27nC @ 10V 12ns 7 ns 20V 60V 17A Ta 45A Tc 60 mJ 6V 10V ±20V
IRLR2703TRPBF IRLR2703TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 23A No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 45mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 38W 8.5 ns 45W Tc 23A SWITCHING 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 1 V 23A Tc 96A 77 mJ 4V 10V ±16V
IRFH5220TRPBF IRFH5220TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant No 8 8-VQFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 7.2 ns 3.6W Ta 8.3W Tc 3.8A SWITCHING 0.0999Ohm 14 ns SILICON N-Channel 99.9m Ω @ 5.8A, 10V 5V @ 100μA 1380pF @ 50V 30nC @ 10V 4.7ns 3.4 ns 20V 200V 20A 3.8A Ta 20A Tc 47A 290 mJ 10V ±20V
IRFB812PBF IRFB812PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 15 Weeks Through Hole Tube 2008 HEXFET® Not For New Designs 1 (Unlimited) 3 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 2.2Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 78W 14 ns 3V 78W Tc 110 ns 3.6A SWITCHING 24 ns SILICON N-Channel 2.2 Ω @ 2.2A, 10V 5V @ 250μA 810pF @ 25V 20nC @ 10V 22ns 17 ns 20V 500V 3.6A Tc 10V ±20V
IRF6614TRPBF IRF6614TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 4.826mm ROHS3 Compliant Lead Free 12.7A No 5 DirectFET™ Isometric ST No SVHC 506μm 3.95mm 8.3MOhm Surface Mount -40°C~150°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 13 ns 1.8V 2.1W Ta 42W Tc 10.1A SWITCHING 18 ns SILICON N-Channel 8.3m Ω @ 12.7A, 10V 2.25V @ 250μA 2560pF @ 20V 29nC @ 4.5V 27ns 3.6 ns 20V 40V 12.7A Ta 55A Tc 22 mJ 4.5V 10V ±20V
IRF7471TR IRF7471TR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2007 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 13m Ω @ 10A, 10V 3V @ 250μA 2820pF @ 20V 32nC @ 4.5V 10A Ta 40V 4.5V 10V ±20V
IRFP4668PBF IRFP4668PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free Tin No 3 TO-247-3 No SVHC 24.99mm 5.3086mm 9.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 1 FET General Purpose Power 1 TO-247AC DRAIN Single 520W 41 ns 5V 520W Tc 130A 175°C SWITCHING 64 ns SILICON N-Channel 9.7m Ω @ 81A, 10V 5V @ 250μA 10720pF @ 50V 241nC @ 10V 105ns 74 ns 30V 200V 200V 5 V 130A Tc 520A 760 mJ 10V ±30V
SPI70N10L SPI70N10L Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2005 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 70A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 250W Tc 70A SWITCHING 0.025Ohm SILICON N-Channel 16m Ω @ 50A, 10V 2V @ 2mA 4540pF @ 25V 240nC @ 10V 70A Tc 280A 700 mJ 4.5V 10V ±20V
IRF1010EZ IRF1010EZ Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 Non-RoHS Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 140W Tc SWITCHING 0.0085Ohm 60V SILICON N-Channel 8.5m Ω @ 51A, 10V 4V @ 100μA 2810pF @ 25V 86nC @ 10V 75A 75A Tc 60V 340A 99 mJ 10V ±20V
IPI70N12S311AKSA1 IPI70N12S311AKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 2016 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-262AA N-CHANNEL 0.0116Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 70A 280A 410 mJ
IRF3805SPBF IRF3805SPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.0033Ohm 55V SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 75A 75A Tc 55V 890A 940 mJ 10V ±20V
SPP21N50C3HKSA1 SPP21N50C3HKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 208W 10 ns 208W Tc 21A SWITCHING 500V 67 ns SILICON N-Channel 190m Ω @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 95nC @ 10V 5ns 4.5 ns 20V 21A Tc 560V 63A 690 mJ 10V ±20V
IRL3705ZSPBF IRL3705ZSPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 86A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 3V 130W Tc 24 ns 75A SWITCHING 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 55V 3 V 75A Tc 4.5V 10V ±16V
IRF7420PBF IRF7420PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 4.9784mm ROHS3 Compliant Lead Free Tin -11.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 14MOhm Surface Mount -55°C~150°C TJ -12V MOSFET (Metal Oxide) 1 Single 2.5W 8.8 ns -900mV 2.5W Ta -11.5A 291 ns P-Channel 14m Ω @ 11.5A, 4.5V 900mV @ 250μA 3529pF @ 10V 38nC @ 4.5V 8.8ns 225 ns 8V -12V -12V -900 mV 11.5A Tc 12V 1.8V 4.5V ±8V
SPB100N03S203T SPB100N03S203T Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) RoHS Compliant Lead Free 100A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) PG-TO263-3-2 300W Tc 100A N-Channel 3mOhm @ 80A, 10V 4V @ 250μA 7020pF @ 25V 150nC @ 10V 40ns 100A Tc 30V 7.02nF 10V ±20V 3 mΩ
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support