Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
RFQ

Min: 1

Mult: 1

BSC119N03S G BSC119N03S G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2011 OptiMOS™ Obsolete 3 (168 Hours) 5 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL FLAT 260 40 8 YES R-PDSO-F5 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W Ta 43W Tc SWITCHING 0.0119Ohm 30V SILICON N-Channel 11.9m Ω @ 30A, 10V 2V @ 20μA 1370pF @ 15V 11nC @ 5V 11.9A 11.9A Ta 30A Tc 30V 120A 60 mJ 4.5V 10V ±20V
AUIRFZ44N AUIRFZ44N Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Surface Mount, Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 45W 7.3 ns 2V 94W Tc 49A SWITCHING 47 ns SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 69ns 60 ns 20V 55V 49A Tc 10V ±20V
IRFB33N15D IRFB33N15D Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 3.8W Ta 170W Tc SWITCHING 0.056Ohm 150V SILICON N-Channel 56m Ω @ 20A, 10V 5.5V @ 250μA 2020pF @ 25V 90nC @ 10V 33A 33A Tc 150V 130A 330 mJ 10V ±30V
IRFB7446GPBF IRFB7446GPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Through Hole MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 99W Tc 120A N-Channel 3.3m Ω @ 70A, 10V 3.9V @ 100μA 3183pF @ 25V 93nC @ 10V 120A Tc 40V 6V 10V ±20V
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 35 ns 300W Tc 120A SWITCHING 70 ns SILICON N-Channel 3.8m Ω @ 100A, 10V 4V @ 270μA 13800pF @ 60V 211nC @ 10V 52ns 21 ns 20V 120A Tc 120V 480A 900 mJ 10V ±20V
IRFR3704ZPBF IRFR3704ZPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm RoHS Compliant Lead Free Tin 60A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 41 ns 2.1V 48W Tc 19 ns 60A SWITCHING 0.0084Ohm 4.9 ns SILICON N-Channel 8.4m Ω @ 15A, 10V 2.55V @ 250μA 1190pF @ 10V 14nC @ 4.5V 8.9ns 12 ns 20V 20V 60A Tc 240A 4.5V 10V ±20V
IRF7413ATR IRF7413ATR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 2.5W Ta N-Channel 13.5mOhm @ 6.6A, 10V 1V @ 250μA 1800pF @ 25V 79nC @ 10V 12A Ta 30V 4.5V 10V ±20V
IRL540NSTRL IRL540NSTRL Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Surface Mount Cut Tape (CT) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C Non-RoHS Compliant Contains Lead 36A 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Not Qualified 3.8W 1 SINGLE WITH BUILT-IN DIODE DRAIN 36A SWITCHING N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 36A Tc 120A
IRF6611TRPBF IRF6611TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.35mm RoHS Compliant Lead Free 32A No 5 DirectFET™ Isometric MX 506μm 5.05mm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 260 40 R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 18 ns 3.9W Ta 89W Tc 22A SWITCHING 0.0026Ohm 24 ns SILICON N-Channel 2.6m Ω @ 27A, 10V 2.25V @ 250μA 4860pF @ 15V 56nC @ 4.5V 57ns 6.5 ns 20V 30V 32A Ta 150A Tc 220A 310 mJ 4.5V 10V ±20V
IRF3805 IRF3805 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2007 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant FAST SWITCHING TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 330W Tc SWITCHING 0.0033Ohm 55V SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 220A 75A Tc 55V 890A 730 mJ 10V ±20V
IRL2910STRRPBF IRL2910STRRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 0.03Ohm 100V SILICON N-Channel 26m Ω @ 29A, 10V 2V @ 250μA 3700pF @ 25V 140nC @ 5V 55A 55A Tc 100V 190A 520 mJ
IPB023N04NGATMA1 IPB023N04NGATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 167W Tc 90A SWITCHING 40V SILICON N-Channel 2.3m Ω @ 90A, 10V 4V @ 95μA 10000pF @ 20V 120nC @ 10V 90A Tc 40V 400A 150 mJ 10V ±20V
IRLR3715 IRLR3715 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2001 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 3.8W Ta 71W Tc SWITCHING 0.011Ohm 20V SILICON N-Channel 14m Ω @ 26A, 10V 3V @ 250μA 1060pF @ 10V 17nC @ 4.5V 30A 54A Tc 20V 200A 19 mJ 4.5V 10V ±20V
IRFR1205TRRPBF IRFR1205TRRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 107W Tc N-Channel 27m Ω @ 26A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 44A Tc 55V 10V ±20V
94-4764 94-4764 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2002 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 200W Tc N-Channel 6mOhm @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A Tc 30V 4.5V 10V ±16V
IPP35CN10N G IPP35CN10N G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 58W Tc SWITCHING 0.035Ohm 100V SILICON N-Channel 35m Ω @ 27A, 10V 4V @ 29μA 1570pF @ 50V 24nC @ 10V 27A 27A Tc 100V 108A 47 mJ 10V ±20V
BSZ023N04LSATMA1 BSZ023N04LSATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Cut Tape (CT) 2012 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Tin 8 ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-F3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 13 ns 2.1W Ta 69W Tc 40A SWITCHING 0.0032Ohm 40V 42 ns SILICON N-Channel 2.35m Ω @ 20A, 10V 2V @ 250μA 2630pF @ 20V 37nC @ 10V 38ns 8 ns 20V 22A 22A Ta 40A Tc 40V 160A 130 mJ 4.5V 10V ±20V
IPB120N08S403ATMA1 IPB120N08S403ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30 ns 80V 278W Tc 120A 0.0025Ohm 60 ns SILICON N-Channel 2.5m Ω @ 100A, 10V 4V @ 223μA 11550pF @ 25V 167nC @ 10V 15ns 50 ns 20V 120A Tc 480A 920 mJ 10V ±20V
SPI35N10 SPI35N10 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2002 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 35A AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 Single 150W 150W Tc 35A 0.044Ohm 39 ns SILICON N-Channel 44m Ω @ 26.4A, 10V 4V @ 83μA 1570pF @ 25V 65nC @ 10V 63ns 23 ns 20V 100V 35A Tc 140A 245 mJ 10V ±20V
IPI120P04P4L03AKSA1 IPI120P04P4L03AKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Through Hole Tube 2011 Automotive, AEC-Q101, OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 136W 21 ns -40V 136W Tc 120A 0.0052Ohm 85 ns SILICON P-Channel 3.4m Ω @ 100A, 10V 2.2V @ 340μA 15000pF @ 25V 234nC @ 10V 16ns 57 ns 16V 120A Tc 40V 480A 78 mJ 4.5V 10V ±16V
IRF7807VD2 IRF7807VD2 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2001 FETKY™ Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 2.5W Ta N-Channel 25mOhm @ 7A, 4.5V 1V @ 250μA 14nC @ 4.5V Schottky Diode (Isolated) 8.3A Ta 30V 4.5V ±20V
IRFS3607TRLPBF IRFS3607TRLPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 140W 16 ns 140W Tc 80A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 80A Tc 10V ±20V
IRFI4510GPBF IRFI4510GPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 15 Weeks Through Hole Tube 2008 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack No SVHC Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 42W 16 ns 2V 42W Tc 35A SWITCHING 54 ns SILICON N-Channel 13.5m Ω @ 21A, 10V 4V @ 100μA 2998pF @ 50V 81nC @ 10V 33ns 37 ns 20V 100V 35A Tc 206 mJ 10V ±20V
IPZ40N04S5L7R4ATMA1 IPZ40N04S5L7R4ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerVDFN not_compliant 1.15mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N3 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 34W 2 ns 40V 34W Tc 40A 175°C 6 ns SILICON N-Channel 7.4m Ω @ 20A, 10V 2V @ 10μA 920pF @ 25V 17nC @ 10V 16V 40V 40A Tc 24 mJ 4.5V 10V ±16V
IPW60R180C7XKSA1 IPW60R180C7XKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Tube 2008 CoolMOS™ C7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc SWITCHING 0.18Ohm 600V SILICON N-Channel 180m Ω @ 5.3A, 10V 4V @ 260μA 1080pF @ 400V 24nC @ 10V 13A 13A Tc 600V 45A 53 mJ 10V ±20V
IPB60R199CPAATMA1 IPB60R199CPAATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 1.1mA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 436 mJ 10V ±20V
IPP90R1K2C3XKSA1 IPP90R1K2C3XKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 83W 70 ns 900V 83W Tc 5.1A SWITCHING 400 ns SILICON N-Channel 1.2 Ω @ 2.8A, 10V 3.5V @ 310μA 710pF @ 100V 28nC @ 10V 20ns 40 ns 20V 5.1A Tc 68 mJ 10V ±20V
IPF04N03LA IPF04N03LA Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 50A LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ 25V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 4 R-PSSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA 115W Tc 50A SWITCHING 0.0059Ohm SILICON N-Channel 3.8m Ω @ 50A, 10V 2V @ 30μA 5199pF @ 15V 41nC @ 5V 50A Tc 600 mJ 4.5V 10V ±20V
IRFH5207TR2PBF IRFH5207TR2PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Cut Tape (CT) 2007 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.9944mm RoHS Compliant No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 3.6W 7.2 ns 2V 9.6mOhm 8-PQFN (5x6) 39 ns 71A 20 ns N-Channel 9.6mOhm @ 43A, 10V 4V @ 100μA 2474pF @ 25V 59nC @ 10V 12ns 7.1 ns 20V 75V 2 V 13A Ta 71A Tc 75V 2.474nF 9.6 mΩ
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support