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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Application JEDEC-95 Code Polarity Case Connection Breakdown Voltage-Min Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Power Dissipation-Max Frequency Band Max Collector Current Diode Capacitance-Max Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount YES BIP General Purpose Small Signal 100mW 2 NPN 0.1W SILICON 2 NPN - Pre-Biased (Dual) 100nA ICBO 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 22k Ω 47k Ω
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 175°C MOSFET (Metal Oxide) 1.8W Ta N-Channel 69m Ω @ 2A, 10V 2.5V @ 100μA 430pF @ 15V 3.2nC @ 4.5V 3.5A Ta 100V 4.5V 10V ±20V
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 35W TO-220SIS 5.5A N-Channel 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 5.5A Ta 450V 490pF 10V ±30V 1.35 Ω
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 700mW Ta 18W Tc 13A N-Channel 11.4m Ω @ 6.5A, 10V 2.3V @ 200μA 1350pF @ 10V 20nC @ 10V 2ns 2.1 ns 20V 13A Ta 30V 4.5V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 2 EAR99 RoHS Compliant SC-79, SOD-523 125°C TJ POSITIVE-INTRINSIC-NEGATIVE 8541.10.00.80 DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F2 SILICON 1 PIN - Single SWITCHING 30V VERY HIGH FREQUENCY 0.5pF 0.5pF @ 1V 1MHz 50mA 30V 1.5Ohm @ 10mA 100MHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2016 U-MOSVIII-H yes Active 1 (Unlimited) 3 RoHS Compliant SOT-23-3 Flat Leads unknown Surface Mount 175°C MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-F3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 1.2W Ta 3.5A SWITCHING 0.069Ohm 100V SILICON N-Channel 69m Ω @ 2A, 10V 2.5V @ 100μA 430pF @ 15V 3.2nC @ 4.5V 3.5A Ta 100V 14A 9.1 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW Ta 4A P-Channel 38m Ω @ 3A, 4V 1V @ 1mA 1484pF @ 10V 22.3nC @ 4V 4A Ta 20V 1.5V 4V ±8V
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0.00000000 download Bulk Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H yes Active 1 (Unlimited) 3 RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-220AB ISOLATED Single 31 ns 35W Tc 34A SWITCHING 0.0095Ohm 50 ns SILICON N-Channel 9.5m Ω @ 17A, 10V 4V @ 500μA 2600pF @ 50V 38nC @ 10V 12ns 18 ns 20V 75A 34A Tc 100V 64 mJ 10V ±20V
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0.00000000 52 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 5 RoHS Compliant 5 LOW NOISE SC-74A, SOT-753 Surface Mount 125°C TJ DEPLETION MODE GULL WING NOT SPECIFIED NOT SPECIFIED 300mW 2 Dual 14mA AMPLIFIER JUNCTION SILICON 2 N-Channel (Dual) 13pF @ 10V -30V 10V 1.2mA @ 10V 200mV @ 100nA
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
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