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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
2SK2719(F) 2SK2719(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Tube 1998 Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 1 125W 125W Tc 3A N-Channel 4.3 Ω @ 1.5A, 10V 4V @ 1mA 750pF @ 25V 25nC @ 10V 15ns 30 ns 30V 3A Ta 900V 10V ±30V
TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 50W Tc 18A N-Channel 270mOhm @ 9A, 10V 4V @ 1mA 2600pF @ 25V 45nC @ 10V 50ns 25 ns 30V 18A Ta 500V 2.6nF 10V ±30V 270 mΩ
2SA949-Y,ONK-1F(J 2SA949-Y,ONK-1F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW PNP 100nA ICBO 150V 50mA 70 @ 10mA 5V 800mV @ 1mA, 10A 120MHz
TK4P50D(T6RSS-Q) TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage 0.1041
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2010 π-MOSVII Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 80W 80W Tc 4A N-Channel 2 Ω @ 2A, 10V 4.4V @ 1mA 380pF @ 25V 9nC @ 10V 15ns 7 ns 30V 4A Ta 500V 10V ±30V
TK65E10N1,S1X TK65E10N1,S1X Toshiba Semiconductor and Storage 0.9980
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 5.4nF 192W Tc 148A N-Channel 4.8m Ω @ 32.5A, 10V 4V @ 1mA 5400pF @ 50V 81nC @ 10V 148A Ta 100V 10V ±20V
T2N7002BK,LM T2N7002BK,LM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 U-MOSVII-H Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 320mW Ta 400mA N-Channel 1.5 Ω @ 100mA, 10V 2.1V @ 250μA 40pF @ 10V 0.6nC @ 4.5V 400mA Ta 60V 4.5V 10V ±20V
TK065N65Z,S1F TK065N65Z,S1F Toshiba Semiconductor and Storage 6.0401
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0.00000000 16 Weeks Tube DTMOSVI Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole 150°C MOSFET (Metal Oxide) 270W Tc N-Channel 65m Ω @ 19A, 10V 4V @ 1.69mA 3650pF @ 300V 62nC @ 10V 38A Ta 650V 10V ±30V
TK5Q60W,S1VQ TK5Q60W,S1VQ Toshiba Semiconductor and Storage 9.3475
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant 3 TO-251-3 Stub Leads, IPak 900mOhm Through Hole 150°C TJ MOSFET (Metal Oxide) Single 60W Tc 5.4A 50 ns N-Channel 900m Ω @ 2.7A, 10V 3.7V @ 270μA 380pF @ 300V 10.5nC @ 10V 18ns 7 ns 30V Super Junction 5.4A Ta 600V 10V ±30V
2SK3342(TE16L1,NQ) 2SK3342(TE16L1,NQ) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) RoHS Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 20W Tc 4.5A N-Channel 1 Ω @ 2.5A, 10V 3.5V @ 1mA 440pF @ 10V 10nC @ 10V 4.5A Ta 250V 10V ±20V
TK3R2A10PL,S4X TK3R2A10PL,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited)
TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage 1.3555
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 1.6W Ta 78W Tc 60A 50 ns N-Channel 2.3m Ω @ 30A, 10V 4V @ 1mA 6100pF @ 30V 72nC @ 10V 9.9ns 16 ns 20V 60A Tc 60V 6.5V 10V ±20V
TK6A45DA(STA4,Q,M) TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage 5.9311
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0.00000000 16 Weeks Through Hole Tube 2011 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 35W TO-220SIS 5.5A N-Channel 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 5.5A Ta 450V 490pF 10V ±30V 1.35 Ω
2SA1931,BOSCHQ(J 2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 50V 5A 100 @ 1A 1V 400mV @ 200mA, 2A 60MHz
SSM3K345R,LF SSM3K345R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2016 U-MOSVI Active 1 (Unlimited) 3 RoHS Compliant SOT-23-3 Flat Leads unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE 1W Ta SWITCHING 0.033Ohm 20V SILICON N-Channel 33m Ω @ 4A, 4.5V 1V @ 1mA 410pF @ 10V 3.6nC @ 4.5V 4A 4A Ta 20V 1.5V 4.5V ±8V
SSM3K310T(TE85L,F) SSM3K310T(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2014 Obsolete 1 (Unlimited) RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 21 ns 700mW Ta 5A 36 ns N-Channel 28m Ω @ 4A, 4V 1120pF @ 10V 14.8nC @ 4V 1V 20V 5A 5A Ta 1.5V 4V ±10V
TK46A08N1,S4X TK46A08N1,S4X Toshiba Semiconductor and Storage 0.8632
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) EAR99 RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 30 ns 35W Tc 46A 51 ns N-Channel 8.4m Ω @ 23A, 10V 4V @ 500μA 2500pF @ 40V 37nC @ 10V 11ns 17 ns 20V 80V 80A 46A Tc 10V ±20V
2SC2655-Y,F(J 2SC2655-Y,F(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk Obsolete 1 (Unlimited) RoHS Compliant TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 1μA ICBO 50V 2A 70 @ 500mA 2V 500mV @ 50mA, 1A 100MHz
TK1K2A60F,S4X TK1K2A60F,S4X Toshiba Semiconductor and Storage 0.3478
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0.00000000 download 12 Weeks Tube U-MOSIX Active Not Applicable RoHS Compliant TO-220-3 Full Pack Through Hole 150°C MOSFET (Metal Oxide) 35W Tc N-Channel 1.2 Ω @ 3A, 10V 4V @ 630μA 740pF @ 300V 21nC @ 10V 6A Ta 600V 10V ±30V
SSM3K15AMFV,L3F SSM3K15AMFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 18 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSIII Active 1 (Unlimited) 3 EAR99 RoHS Compliant SOT-723 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 150mW Ta 100mA SWITCHING 6Ohm 30V SILICON N-Channel 3.6 Ω @ 10mA, 4V 1.5V @ 100μA 13.5pF @ 3V 0.1A 100mA Ta 30V 2.5V 4V ±20V
TK22A10N1,S4X TK22A10N1,S4X Toshiba Semiconductor and Storage 1.1519
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0.00000000 12 Weeks Through Hole Tube 2006 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 27 ns 30W Tc 22A 38 ns N-Channel 13.8m Ω @ 11A, 10V 4V @ 300μA 1800pF @ 50V 28nC @ 10V 11ns 11 ns 20V 52A 22A Tc 100V 10V ±20V
2SK2231(TE16R1,NQ) 2SK2231(TE16R1,NQ) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount, Through Hole Tape & Reel (TR) 2007 Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free Silver, Tin 5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ 60V MOSFET (Metal Oxide) 1 Single 20W 160mOhm PW-MOLD 20W Tc 5A 95 ns N-Channel 160mOhm @ 2.5A, 10V 2V @ 1mA 370pF @ 10V 12nC @ 10V 55ns 65 ns 20V 60V 5A Ta 60V 370pF 4V 10V ±20V 160 mΩ
TPCC8093,L1Q TPCC8093,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active RoHS Compliant 8-PowerVDFN Surface Mount 150°C MOSFET (Metal Oxide) 1.9W Ta 30W Tc N-Channel 5.8m Ω @ 10.5A, 4.5V 1.2V @ 500μA 1860pF @ 10V 16nC @ 5V 21A Ta 20V 2.5V 4.5V ±12V
2SC2229-O(MIT1F,M) 2SC2229-O(MIT1F,M) Toshiba Semiconductor and Storage 0.1213
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW TO-92MOD NPN 100nA ICBO 150V 50mA 70 @ 10mA 5V 500mV @ 1mA, 10mA 120MHz
TK1K7A60F,S4X TK1K7A60F,S4X Toshiba Semiconductor and Storage 0.7346
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0.00000000 download 12 Weeks Active 1 (Unlimited)
TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage 0.5788
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 98W 98W Tc 60A 43 ns N-Channel 13.8m Ω @ 16A, 10V 4V @ 500μA 2000pF @ 60V 34nC @ 10V 14ns 14 ns 20V 120V 60A Tc 10V ±20V
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 30A SWITCHING 0.028Ohm 60V SILICON P-Channel 21.8m Ω @ 15A, 10V 3V @ 1mA 3950pF @ 10V 80nC @ 10V 43ns 118 ns 10V 30A Ta 60V 60A 71 mJ 6V 10V +10V, -20V
TK3A65D(STA4,Q,M) TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage 1.1331
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 3A N-Channel 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 540pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3A Ta 650V 540pF 10V ±30V 2.25 Ω
2SK3670(T6CANO,F,M 2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C MOSFET (Metal Oxide) 600mW Ta P-Channel 150m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 2A Ta 20V 1.5V 4.5V +6V, -8V
SSM3K37FS,LF SSM3K37FS,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSIII Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 unknown Surface Mount 150°C TA MOSFET (Metal Oxide) 100mW Ta 200mA N-Channel 2.2 Ω @ 100mA, 4.5V 1V @ 1mA 12pF @ 10V 200mA Ta 20V 1.5V 4.5V ±10V
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