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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Base Part Number Surface Mount Number of Channels Subcategory Gain Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Output Current-Max Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Power Dissipation-Max Reverse Voltage Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2) Noise Figure (dB Typ @ f)
MT3S20P(TE12L,F) MT3S20P(TE12L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant TO-243AA unknown Surface Mount 150°C TJ Other Transistors 16.5dB 1.8W 1.8W Single NPN 12V 80mA 12V NPN 5000MHz 100 @ 50mA 5V 7GHz 1.45dB @ 1GHz
RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount YES BIP General Purpose Small Signal 100mW 2 NPN 0.1W SILICON 2 NPN - Pre-Biased (Dual) 100nA ICBO 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 22k Ω 47k Ω
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ 10W 10W 80V 3A 80V 500mV NPN 1μA ICBO 180 @ 500mA 2V 500mV @ 100mA, 1A 150MHz
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2009 Active 1 (Unlimited) 2.9mm RoHS Compliant Copper, Silver, Tin No 3 TO-236-3, SC-59, SOT-23-3 100MHz 1.1mm 1.5mm Surface Mount 125°C TJ 150mW 1 100MHz Single 150mW 120V 100mA 120V 300mV PNP 100nA ICBO -300mV -120V -5V 200 350 @ 2mA 6V 300mV @ 1mA, 10mA
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0.00000000 download 16 Weeks Through Hole Tube 2007 Active Not Applicable 3 RoHS Compliant Lead Free -15A No 3 TO-3P-3, SC-65-3 30MHz Through Hole 150°C TJ -230V 2SA1962 Other Transistors 130W 1 COLLECTOR 30MHz PNP Single 130W 15A 230V 230V AMPLIFIER SILICON PNP 30MHz 5μA ICBO -1.5V 230V 5V 55 80 @ 1A 5V 3V @ 800mA, 8A
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0.00000000 download Tape & Reel (TR) 2009 π-MOSV Obsolete 1 (Unlimited) RoHS Compliant 8-PowerVDFN unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES FET General Purpose Power Single 1.6W Ta 45W Tc N-Channel 450m Ω @ 2.7A, 10V 4V @ 1mA 600pF @ 10V 10nC @ 10V 5.5A 5.5A Ta 200V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 45W Tc 11A N-Channel 630mOhm @ 5.5A, 10V 4V @ 1mA 1350pF @ 25V 25nC @ 10V 22ns 15 ns 30V 11A Ta 550V 1.35nF 10V ±30V 630 mΩ
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0.00000000 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 35W 1.5Ohm TO-220SIS 35W Tc 5A N-Channel 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 500V 5A Ta 500V 490pF 10V ±30V 1.5 Ω
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP Advance (5x5) 1.6W Ta 42W Tc 28A N-Channel 5.6mOhm @ 14A, 10V 2.3V @ 300μA 2900pF @ 10V 34nC @ 10V 2.8ns 9.5 ns 20V 28A Ta 30V 2.9nF 4.5V 10V ±20V 5.6 mΩ
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0.00000000 download 16 Weeks Tape & Reel (TR) 2017 U-MOSIX-H Active 1 (Unlimited) RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C MOSFET (Metal Oxide) 66W Tc N-Channel 6.7m Ω @ 23A, 10V 2.5V @ 300μA 1990pF @ 30V 26nC @ 10V 46A Tc 60V 4.5V 10V ±20V
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0.00000000 14 Weeks Cut Tape (CT) yes Discontinued 1 (Unlimited) RoHS Compliant SC-70, SOT-323 unknown Surface Mount 125°C TJ 100mW NPN 100nA ICBO 50V 150mA 70 @ 2mA 6V 250mV @ 10mA, 100mA 80MHz
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0.00000000 12 Weeks Tube 2016 U-MOSIX-H Active Not Applicable RoHS Compliant TO-220-3 Full Pack Through Hole 175°C TJ MOSFET (Metal Oxide) TO-220SIS 36W Tc N-Channel 11.4mOhm @ 8A, 4.5V 2.5V @ 300μA 1990pF @ 25V 28.4nC @ 10V 50A Tc 60V 4.5V 10V ±20V
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2004 U-MOSVI Active 1 (Unlimited) EAR99 RoHS Compliant 6-WDFN Exposed Pad unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 1W 1W Ta 10A P-Channel 15.3m Ω @ 4A, 4.5V 1V @ 1mA 2600pF @ 10V 29.9nC @ 4.5V 8V -20V 10A Ta 20V 1.5V 4.5V ±8V
TK14A55D(STA4,Q,M) TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 50W Tc 14A N-Channel 370mOhm @ 7A, 10V 4V @ 1mA 2300pF @ 25V 40nC @ 10V 50ns 25 ns 30V 14A Ta 550V 2.3nF 10V ±30V 370 mΩ
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0.00000000 download 24 Weeks Surface Mount Tape & Reel (TR) 2010 U-MOSIII Active 1 (Unlimited) SMD/SMT RoHS Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown Surface Mount 150°C MOSFET (Metal Oxide) 1 20W 2V 20W Tc 5A P-Channel 170m Ω @ 2.5A, 10V 2V @ 1mA 700pF @ 10V 15nC @ 10V 14ns 14 ns 20V 60V 2 V 5A Ta 4V 10V ±20V
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD PNP 100nA ICBO 50V 3A 120 @ 100mA 2V 500mV @ 75mA, 1.5A 100MHz
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant 3-SMD, Flat Lead Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 103m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 3A Ta 20V 1.5V 4.5V +6V, -8V
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) EAR99 RoHS Compliant SOT-563, SOT-666 Surface Mount 150°C MOSFET (Metal Oxide) ENHANCEMENT MODE YES Other Transistors Single 500mW Ta P-Channel 50m Ω @ 3A, 10V 1.2V @ 1mA 560pF @ 15V 7.9nC @ 4.5V 3.6A 3.6A Ta 30V 1.8V 10V ±12V
TPN7R006PL,L1Q TPN7R006PL,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 630mW Ta 75W Tc N-Channel 7m Ω @ 27A, 10V 2.5V @ 200μA 1875pF @ 30V 20nC @ 10V 54A Tc 60V 4.5V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSII Active 1 (Unlimited) RoHS Compliant No 6 SOT-563, SOT-666 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 15 ns 500mW Ta 1.4A 14 ns P-Channel 251m Ω @ 650mA, 10V 2.6V @ 1mA 137pF @ 15V 20V 1.4A Ta 30V 4V 10V ±20V
SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 370m Ω @ 600mA, 4.5V 1V @ 1mA 50pF @ 10V 1A Ta 12V 1.2V 4.5V ±10V
TK15A50D(STA4,Q,M) TK15A50D(STA4,Q,M) Toshiba Semiconductor and Storage 2.6063
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 50W TO-220SIS 50W Tc 15A N-Channel 300mOhm @ 7.5A, 10V 4V @ 1mA 2300pF @ 25V 40nC @ 10V 50ns 25 ns 30V 15A Ta 500V 2.3nF 10V ±30V 300 mΩ
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 800mW PNP 100nA ICBO 150V 50mA 70 @ 10mA 5V 800mV @ 1mA, 10A 120MHz
CRG03(TE85L,Q,M) CRG03(TE85L,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 150°C -40°C RoHS Compliant Silver, Tin No 2 SOD-123F Surface Mount Rectifier Diodes 1 Standard 1A 1.1V 16.5A Single Standard Recovery >500ns, > 200mA (Io) 10μA @ 400V 1V @ 1A -40°C~150°C 400V 1A 10μA 400V 16.5A 400V
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ 150mW 150mW 200MHz 30V 500mA 30V 250mV PNP 100nA ICBO -250mV -500mA -35V -5V 25 120 @ 100mA 1V 250mV @ 10mA, 100mA
TK8A10K3,S5Q TK8A10K3,S5Q Toshiba Semiconductor and Storage 3.4426
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0.00000000 download 52 Weeks Through Hole Tube 2010 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 18W Tc 8A N-Channel 120mOhm @ 4A, 10V 4V @ 1mA 530pF @ 10V 12.9nC @ 10V 8A Ta 100V 530pF 10V ±20V 120 mΩ
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS NPN 1μA ICBO 230V 1A 100 @ 100mA 5V 1.5V @ 50mA, 500mA 100MHz
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) SC-71 Through Hole 150°C TJ 1W NPN 100μA ICBO 375V 1A 100 @ 100mA 5V 1V @ 100mA, 800mA
TPC8048-H(TE12L,Q) TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage 6.3800
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0.00000000 download Surface Mount Cut Tape (CT) 2009 U-MOSVI-H Discontinued 1 (Unlimited) RoHS Compliant No 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 1.9W 1W Ta 16A N-Channel 6.9m Ω @ 8A, 10V 2.3V @ 1mA 7540pF @ 10V 87nC @ 10V 3.7ns 7.6 ns 20V 16A Ta 60V 4.5V 10V ±20V
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