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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Radiation Hardening Number of Pins Package / Case Height Mounting Type Weight Operating Temperature Technology Operating Mode Capacitance Terminal Position Terminal Form JESD-30 Code Number of Channels Subcategory Reference Standard Number of Elements Configuration Case Connection Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
2SK2962(T6CANO,F,M 2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
TK15A60U(STA4,Q,M) TK15A60U(STA4,Q,M) Toshiba Semiconductor and Storage 1.6039
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0.00000000 download 12 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 40W TO-220SIS 40W Tc 15A N-Channel 300mOhm @ 7.5A, 10V 5V @ 1mA 950pF @ 10V 17nC @ 10V 37ns 8 ns 30V 15A Ta 600V 950pF 10V ±30V 300 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.9W 13.3mOhm 8-SOP (5.5x6.0) 11A N-Channel 13.3mOhm @ 5.5A, 10V 2.5V @ 1mA 2150pF @ 10V 21nC @ 10V 3ns 3.9 ns 20V 30V 11A Ta 30V 2.15nF 13.3 mΩ
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP Advance (5x5) 1.6W Ta 70W Tc 56A N-Channel 1.9mOhm @ 28A, 10V 2.3V @ 1mA 7700pF @ 10V 91nC @ 10V 5.7ns 11 ns 20V 56A Ta 30V 7.7nF 4.5V 10V ±20V 1.9 mΩ
TK8P60W,RVQ TK8P60W,RVQ Toshiba Semiconductor and Storage 1.6505
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 DTMOSIV Active 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 420mOhm DPAK 80W Tc 8A 70 ns N-Channel 500mOhm @ 4A, 10V 3.7V @ 400μA 570pF @ 300V 18.5nC @ 10V 20ns 5.5 ns 30V 600V Super Junction 8A Ta 600V 570pF 10V ±30V 500 mΩ
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 U-MOSVII-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 8-SOP Advance (5x5) 1.6W Ta 42W Tc 28A N-Channel 5.6mOhm @ 14A, 10V 2.3V @ 300μA 2900pF @ 10V 34nC @ 10V 2.8ns 9.5 ns 20V 28A Ta 30V 2.9nF 4.5V 10V ±20V 5.6 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 U-MOSV-H Obsolete 1 (Unlimited) RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1.6W Ta 45W Tc 34A N-Channel 5.3m Ω @ 17A, 10V 2.3V @ 1mA 3430pF @ 10V 36nC @ 10V 3.6ns 7.7 ns 20V 34A Ta 30V 4.5V 10V ±20V
TPN2R203NC,L1Q TPN2R203NC,L1Q Toshiba Semiconductor and Storage 1.0807
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSVIII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 Single 14 ns 1.8mOhm 8-TSON Advance (3.3x3.3) 700mW Ta 42W Tc 45A 68 ns N-Channel 2.2mOhm @ 22.5A, 10V 2.3V @ 500μA 2230pF @ 15V 34nC @ 10V 9ns 24 ns 20V 30V 45A Tc 30V 2.23nF 10V ±20V 2.2 mΩ
TPCF8104(TE85L,F,M TPCF8104(TE85L,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant No 8 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) 2.5W 700mW Ta 6A P-Channel 28m Ω @ 3A, 10V 2V @ 1mA 1760pF @ 10V 34nC @ 10V 2.8ns 22 ns 20V -30V 6A Ta 30V
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0.00000000 12 Weeks Tube 2016 U-MOSIX-H Active Not Applicable RoHS Compliant TO-220-3 Full Pack Through Hole 175°C TJ MOSFET (Metal Oxide) TO-220SIS 36W Tc N-Channel 11.4mOhm @ 8A, 4.5V 2.5V @ 300μA 1990pF @ 25V 28.4nC @ 10V 50A Tc 60V 4.5V 10V ±20V
TK10A60D(STA4,Q,M) TK10A60D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) Single 45W 750mOhm TO-220SIS 45W Tc 10A 15 ns N-Channel 750mOhm @ 5A, 10V 4V @ 1mA 1350pF @ 25V 25nC @ 10V 55ns 100 ns 30V 600V 10A Ta 600V 1.35nF 10V ±30V 750 mΩ
SSM3K17SU,LF SSM3K17SU,LF Toshiba Semiconductor and Storage 0.3110
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0.00000000 Surface Mount Tape & Reel (TR) Obsolete 1 (Unlimited) RoHS Compliant SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) 150mW 150mW Ta 100mA N-Channel 20 Ω @ 10mA, 4V 1.5V @ 1μA 7pF @ 3V 7V 50V 100mA Ta
TK20A60U(Q,M) TK20A60U(Q,M) Toshiba Semiconductor and Storage 25.5783
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0.00000000 download 52 Weeks Through Hole Tube 2009 DTMOSII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 45W 190mOhm TO-220SIS 45W Tc 20A N-Channel 190mOhm @ 10A, 10V 5V @ 1mA 1470pF @ 10V 27nC @ 10V 40ns 12 ns 30V 600V 20A Ta 600V 1.47nF 10V ±30V 190 mΩ
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
TK10A80E,S4X TK10A80E,S4X Toshiba Semiconductor and Storage 0.9789
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0.00000000 12 Weeks Through Hole Tube 2014 π-MOSVIII Active Not Applicable RoHS Compliant TO-220-3 Full Pack 18.1mm Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) 1 Single 50W 80 ns 50W Tc 10A 150°C 140 ns N-Channel 1 Ω @ 5A, 10V 4V @ 1mA 2000pF @ 25V 46nC @ 10V 40ns 35 ns 30V 800V 10A Ta 10V ±30V
TK7A55D(STA4,Q,M) TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage 8.2746
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0.00000000 16 Weeks Through Hole Tube 1998 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 7A N-Channel 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 700pF @ 25V 16nC @ 10V 20ns 11 ns 30V 7A Ta 550V 700pF 10V ±30V 1.25 Ω
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 30A SWITCHING 0.028Ohm 60V SILICON P-Channel 21.8m Ω @ 15A, 10V 3V @ 1mA 3950pF @ 10V 80nC @ 10V 43ns 118 ns 10V 30A Ta 60V 60A 71 mJ 6V 10V +10V, -20V
TK65E10N1,S1X TK65E10N1,S1X Toshiba Semiconductor and Storage 0.9980
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 5.4nF 192W Tc 148A N-Channel 4.8m Ω @ 32.5A, 10V 4V @ 1mA 5400pF @ 50V 81nC @ 10V 148A Ta 100V 10V ±20V
SSM3J351R,LF SSM3J351R,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2016 U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 2W Ta P-Channel 134m Ω @ 1A, 10V 2V @ 1mA 660pF @ 10V 15.1nC @ 10V 3.5A Ta 60V 4V 10V +10V, -20V
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 1 150W 150W Tc 30A N-Channel 68m Ω @ 15A, 10V 3.5V @ 1mA 5400pF @ 10V 132nC @ 10V 30A Ta 250V 10V ±20V
TK1K7A60F,S4X TK1K7A60F,S4X Toshiba Semiconductor and Storage 0.7346
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0.00000000 download 12 Weeks Active 1 (Unlimited)
SSM5H90ATU,LF SSM5H90ATU,LF Toshiba Semiconductor and Storage 0.3140
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant 5-SMD, Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta N-Channel 65m Ω @ 1.5A, 4V 1.2V @ 1mA 200pF @ 10V 2.2nC @ 4V 2.4A Ta 20V 2.5V 4V ±10V
TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2014 DTMOSIV-H Active 1 (Unlimited) 4 RoHS Compliant 4-VSFN Exposed Pad Surface Mount 37.393021mg 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO LEAD S-PSSO-N4 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 55 ns 240W Tc 30.8A SWITCHING 0.098Ohm 600V 130 ns SILICON N-Channel 98m Ω @ 9.4A, 10V 3.5V @ 1.5mA 3000pF @ 300V 65nC @ 10V 22ns 6 ns 30V Super Junction 30.8A Ta 600V 338 mJ 10V ±30V
SSM3K15CT(TPL3) SSM3K15CT(TPL3) Toshiba Semiconductor and Storage 0.0356
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 π-MOSVI Not For New Designs 1 (Unlimited) RoHS Compliant No 3 SC-101, SOT-883 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Powers Single 100mW 100mW Ta 100mA N-Channel 4 Ω @ 10mA, 4V 1.5V @ 100μA 7.8pF @ 3V 20V 30V 0.1A 100mA Ta 2.5V 4V ±20V
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0.00000000 download Through Hole Bulk 2009 U-MOSIII Obsolete 1 (Unlimited) RoHS Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220NIS 35W Tc 35A N-Channel 12.5mOhm @ 18A, 10V 2.5V @ 1mA 5120pF @ 10V 91nC @ 10V 35A Ta 60V 5.12nF 4V 10V ±20V 12.5 mΩ
TK49N65W,S1F TK49N65W,S1F Toshiba Semiconductor and Storage 9.2683
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0.00000000 16 Weeks Active 1 (Unlimited) RoHS Compliant
TPCP8J01(TE85L,F,M TPCP8J01(TE85L,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2007 Active RoHS Compliant 8 8-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 1.06W 2.14W Ta 22 ns P-Channel 35m Ω @ 3A, 10V 2V @ 1mA 1760pF @ 10V 34nC @ 10V 12ns 90 ns -32V 5.5A Ta 32V 4V 10V ±20V
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0.00000000 16 Weeks Through Hole Tube 2014 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W Tc 9.7A N-Channel 450mOhm @ 4.9A, 10V 4.5V @ 500μA 720pF @ 300V 25nC @ 10V 9.7A Ta 600V 720pF 10V ±30V 450 mΩ
TK50E06K3(S1SS-Q) TK50E06K3(S1SS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Through Hole Tube 2016 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole
TPH3R704PC,LQ TPH3R704PC,LQ Toshiba Semiconductor and Storage 1.0628
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0.00000000 16 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 830mW Ta 90W Tc N-Channel 3.7m Ω @ 41A, 10V 2.4V @ 300μA 3615pF @ 20V 47nC @ 10V 82A Tc 40V 4.5V 10V ±20V
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