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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Current Rating Package / Case Reach Compliance Code Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Gain Max Power Dissipation Power - Max Number of Elements Configuration Diode Type Output Current-Max Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Tolerance Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) On-State Current-Max Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Critical Rate of Rise of Off-State Voltage-Min Holding Current-Max DC Gate Trigger Current-Max DC Gate Trigger Voltage-Max Element Configuration Power Dissipation Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Test Voltage Hold Current RMS Current (Irms) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Trigger Device Type Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Noise Figure Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Reference Voltage Voltage Tol-Max Working Test Current Dynamic Impedance-Max Voltage - Off State Current - On State (It (RMS)) (Max) Impedance-Max Voltage - Zener (Nom) (Vz) Repetitive Peak Reverse Voltage Voltage - Gate Trigger (Vgt) (Max) RMS On-state Current-Max Triac Type Critical Rate of Rise of Commutation Voltage-Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Collector-Base Capacitance-Max
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