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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Capacitance HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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0.00000000 download 13 Weeks Tube Automotive, AEC-Q101, E Active 1 (Unlimited) RoHS Compliant TO-247-3 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) TO-247-3 125W Tc N-Channel 84.5mOhm @ 20A, 15V 3.5V @ 5mA 660pF @ 600V 30.4nC @ 15V 35A Tc 900V 15V +18V, -8V
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