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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Capacitance Base Part Number Gain Max Power Dissipation Power - Max Number of Elements Diode Type Output Current Polarity Forward Current Forward Voltage Current Rating (Amps) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Turn-Off Delay Time FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Current - Test Transistor Type Voltage - Test Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
C6D10065A C6D10065A Cree/Wolfspeed 5.4093
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0.00000000 4 Weeks Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 50μA @ 650V 1.5V @ 10A -55°C~175°C 650V 37A DC 0ns 611pF @ 0V 1MHz
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0.00000000 download 10 Weeks Through Hole Tube 2005 Z-FET™ Obsolete 1 (Unlimited) 135°C -55°C 16.13mm RoHS Compliant No 3 TO-247-3 Unknown 21.1mm 5.21mm Through Hole -55°C~135°C TJ SiCFET (Silicon Carbide) 1 Single 150W 13 ns 2.5V 80mOhm TO-247-3 215W Tc 42A 40 ns N-Channel 110mOhm @ 20A, 20V 4V @ 1mA 1915pF @ 800V 90.8nC @ 20V 38ns 24 ns 25V 1.2kV 2.5 V 42A Tc 1200V 1.915nF 20V +25V, -5V 110 mΩ
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