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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Material Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Color Diameter Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Qualification Status Ambient Temperature Range High Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration JEDEC-95 Code Polarity Tolerance Case Connection Wire Gauge (Max) Wire Gauge (Min) Gain Bandwidth Product Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Max Dual Supply Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Fall Time-Max (tf) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Impedance-Max Voltage - Zener (Nom) (Vz) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Collector-Base Capacitance-Max
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