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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Frequency Height Width Impedance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Ambient Temperature Range High Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Rep Pk Reverse Voltage-Max JEDEC-95 Code Polarity Forward Current Tolerance Case Connection Gain Bandwidth Product Polarity/Channel Type Element Configuration Voltage Tolerance Power Dissipation Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Max Dual Supply Voltage Drain to Source Resistance Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Current - Continuous Drain (Id) @ 25°C Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Turn On Time-Max (ton) Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) Reference Voltage Voltage Tol-Max Working Test Current Impedance-Max Voltage - Zener (Nom) (Vz) Voltage Temp Coeff-Max DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
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