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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Ambient Temperature Range High Voltage Number of Elements Configuration Diode Type Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F Reverse Recovery Time (trr)
MCP87130T-U/MF MCP87130T-U/MF Microchip Technology 0.0000
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0.00000000 download 11 Weeks Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) EAR99 5mm ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC not_compliant 1mm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed 260 40 MCP87130 YES FET General Purpose Powers Single 2.2W 2.2 ns 1.35V 2.1W Ta 54A 4.2 ns N-Channel 13.5m Ω @ 10A, 10V 1.7V @ 250μA 400pF @ 12.5V 8nC @ 4.5V 5.4ns 2.1 ns 10V 25V 1.35 V 43A 43A Tc 3.3V 10V +10V, -8V
VN2410L-G VN2410L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2005 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.334mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 2A e3 BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 240V 1 Single 1W 8 ns 1W Tc 190mA SWITCHING 23 ns SILICON N-Channel 10 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 24 ns 20V 240V 190mA Tj 20 pF 2.5V 10V ±20V
MS8150-P2613 MS8150-P2613 Microchip Technology 0.0000
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0.00000000 download Waffle Active RoHS Compliant Schottky Diode 2
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.15pF @ 10V, 1MHz 70V 5Ohm @ 10mA, 100MHz
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0.00000000 - B, Axial Microchip Technology Through Hole Standard B, Axial Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 400 V 1.5 V @ 9 A -65°C ~ 175°C 400 V 3A - 150 ns
APT30DL60BCTG APT30DL60BCTG Microchip Technology 0.0000
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0.00000000 download Tube Obsolete RoHS Compliant Switching Diode 3 Dual Common Cathode
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0.00000000 download 14 Weeks Through Hole Bulk 2010 Active 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Gold 3 TO-205AD, TO-39-3 Metal Can 6.604mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1 150°C Single 6.25W 10 ns 800mV 4Ohm TO-39 6.25W Tc 350mA 10 ns N-Channel 4Ohm @ 1A, 10V 2V @ 1mA 50pF @ 24V 20V 90V 350mA Tj 90V 50pF 5V 10V ±20V 4 Ω
VN10KN3-G-P013 VN10KN3-G-P013 Microchip Technology 0.6179
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 FET General Purpose Power 1 Single 1W Tc 310mA SWITCHING 5Ohm SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 310mA Tj 5 pF 5V 10V ±30V
DN3145N8-G DN3145N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free No 3 TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) FLAT 260 40 1 FET General Purpose Power 1 DRAIN Single 1.3W 10 ns 1.3W Ta 100mA SWITCHING 20 ns SILICON N-Channel 60 Ω @ 100mA, 0V 120pF @ 25V 15ns 15 ns 20V 450V Depletion Mode 100mA Tj 0V ±20V
VN0300L-G-P002 VN0300L-G-P002 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 1 1 Single 1W Tc 640mA SWITCHING SILICON N-Channel 1.2 Ω @ 1A, 10V 2.5V @ 1mA 190pF @ 20V 30V 30V 0.64A 640mA Tj 50 pF 5V 10V ±30V
SM0512-M1 SM0512-M1 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS non-compliant Attenuator|Switch 2 UHF|VHF|HF Single
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 10 ns 1.6W Ta 730mA SWITCHING 2Ohm 20 ns SILICON N-Channel 1.5 Ω @ 750mA, 10V 2V @ 1mA 125pF @ 25V 10ns 10 ns 20V 100V 0.73A 730mA Tj 5A 3V 10V ±20V
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0.00000000 download Active RoHS Compliant VCO 2 Single
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0.00000000 download 6 Weeks Through Hole Bulk 2011 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 740mW 4 ns 1W Tc 250mA SWITCHING 8Ohm 8 ns SILICON P-Channel 8 Ω @ 500mA, 10V 3.5V @ 1mA 60pF @ 25V 5ns 4 ns 20V -60V 0.25A 250mA Tj 60V 8 pF 5V 10V ±20V
DN2535N3-G-P013 DN2535N3-G-P013 Microchip Technology 0.0000
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0.00000000 download 5 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM O-PBCY-T3 1 1 SINGLE WITH BUILT-IN DIODE 1W Tc 120mA SWITCHING SILICON N-Channel 25 Ω @ 120mA, 0V 300pF @ 25V 350V Depletion Mode 120mA Tj 5 pF 0V ±20V
MPV21004-206/TR MPV21004-206/TR Microchip Technology 0.0000
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0.00000000 - Microchip Technology
MSC030SDA070BCT MSC030SDA070BCT Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 700 V 1.8 V @ 30 A -55°C ~ 175°C 700 V 60A 1200pF @ 1V, 1MHz 0 ns
TN0604N3-G TN0604N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 740mW 10 ns 740mW Ta 700mA SWITCHING 0.75Ohm 25 ns SILICON N-Channel 750m Ω @ 1.5A, 10V 1.6V @ 1mA 190pF @ 20V 6ns 20 ns 20V 40V 0.7A 700mA Tj 50 pF 5V 10V ±20V
MIC94030BM4 TR MIC94030BM4 TR Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2006 TinyFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-253-4, TO-253AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) MIC94030 SOT-143 568mW Ta P-Channel 450mOhm @ 100mA, 10V 1.4V @ 250μA 100pF @ 12V 1A Ta 16V 2.7V 10V 16V
TN0106N3-G TN0106N3-G Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 LOGIC LEVEL COMPATIBLE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 2 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 500mA, 10V 2V @ 500μA 60pF @ 25V 3ns 3 ns 20V 60V 350mA Tj 8 pF 4.5V 10V ±20V
0912GN-650V 0912GN-650V Microchip Technology 0.0000
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KVX3901A-23-4 KVX3901A-23-4 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C 1 Pair Common Cathode SOT-23-3 32pF @ 3V, 1MHz 27 V - 500 @ 4V, 50MHz
0912GN-100LV 0912GN-100LV Microchip Technology 0.0000
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TN2435N8-G TN2435N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm 10Ohm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 5 ns 1.6W Ta 365mA SWITCHING 28 ns SILICON N-Channel 6 Ω @ 750mA, 10V 2.5V @ 1mA 200pF @ 25V 10ns 10 ns 20V 350V 0.365A 365mA Tj 3V 10V ±20V
GCX1208-23-4 GCX1208-23-4 Microchip Technology 0.0000
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0.00000000 GCX1208 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C 1 Pair Common Cathode SOT-23-3 3.9pF @ 4V, 1MHz 30 V 3.9 C0/C30 2500 @ 4V, 50MHz
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0.00000000 download Unconfirmed RoHS Compliant VCO 2 Single
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 22pF @ 4V, 1MHz 22 V - 160 @ 4V, 50MHz
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