Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Diameter Length RoHS Status Lead Free Contact Plating Voltage - Rated Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Frequency Height Width Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Gain Number of Elements Configuration Diode Type Case Connection Current Rating (Amps) Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Noise Figure Input Capacitance Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Max Voltage - Off State Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - On State (It (AV)) (Max) Reverse Recovery Time (trr) Package Product Status
DN3765K4-G DN3765K4-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2008 Active 3 (168 Hours) 2 EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.1mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) GULL WING 260 NOT SPECIFIED R-PSSO-G2 1 Not Qualified 1 DRAIN Single 2.5W 50 ns 2.5W Ta 300mA SWITCHING 8Ohm 75 ns SILICON N-Channel 8 Ω @ 150mA, 0V 825pF @ 25V 75ns 100 ns 20V 650V Depletion Mode 300mA Tj 0.5A 0V ±20V
VN0808L-G VN0808L-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Bulk 2009 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 1W Tc 300mA SWITCHING 4Ohm SILICON N-Channel 4 Ω @ 1A, 10V 2V @ 1mA 50pF @ 25V 30V 80V 300mA Tj 10V ±30V
VP2206N3-G VP2206N3-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Bulk 1998 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 4 ns 740mW Tc 640mA SWITCHING 0.9Ohm 16 ns SILICON P-Channel 900m Ω @ 3.5A, 10V 3.5V @ 10mA 450pF @ 25V 16ns 22 ns 20V -60V 0.64A 640mA Tj 60V 40 pF 5V 10V ±20V
VN10KN3-G-P014 VN10KN3-G-P014 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 FET General Purpose Power 1 Single 1W Tc 310mA SWITCHING 5Ohm 60V SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 310mA Tj 60V 5 pF 5V 10V ±30V
LND150K1-G LND150K1-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.02mm 1.4mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) e3 DUAL GULL WING 260 40 1 Single 360mW 90 ns 360mW Ta 13mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V 500V Depletion Mode 13mA Tj 0V ±20V
LXP1002-23-4 LXP1002-23-4 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.32pF @ 50V, 1MHz 100 mA 50V 4Ohm @ 100mA, 100MHz
SM0509-M1 SM0509-M1 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape and Reel Active RoHS non-compliant Attenuator|Switch 2 HF|VHF|UHF Single
APT60DQ120SG APT60DQ120SG Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 100 μA @ 1200 V 3.3 V @ 60 A -55°C ~ 175°C 60A - 320 ns
2N5239 2N5239 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 * Microchip Technology Bulk Active
GMP4215-GM1 GMP4215-GM1 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape and Reel Active RoHS Compliant Attenuator|Switch 2 SHF
MPL4700-206/TR MPL4700-206/TR Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.15pF @ 10V, 1MHz 25V 2Ohm @ 10mA, 1GHz
UM4010B UM4010B Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 3.68(Max) RoHS non-compliant Attenuator|Switch 2 HF|S Single
1N4944/TR 1N4944/TR Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 - A, Axial Microchip Technology Through Hole Standard - Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 400 V 1.3 V @ 1 A -65°C ~ 175°C 400 V 1A 35pF @ 12V, 1MHz 150 ns
GCX1206-23-0/TR GCX1206-23-0/TR Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 GCX1206 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 2.7pF @ 4V, 1MHz 30 V 3.7 C0/C30 2500 @ 4V, 50MHz
VRF154FL VRF154FL Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000
VN0106N3-G VN0106N3-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 3 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 1A, 10V 2.4V @ 1mA 65pF @ 25V 5ns 5 ns 20V 60V 350mA Tj 8 pF 5V 10V ±20V
VN2222LL-G-P003 VN2222LL-G-P003 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 400mW Ta 1W Tc 230mA SWITCHING 60V SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 230mA Tj 60V 8 pF 5V 10V ±30V
VN2460N8-G VN2460N8-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 1 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free 4 FAST SWITCHING TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta 160mA SWITCHING 25Ohm 25 ns SILICON N-Channel 20 Ω @ 100mA, 10V 4V @ 2mA 150pF @ 25V 10ns 10 ns 20V 600V 0.2A 200mA Tj 25 pF 4.5V 10V ±20V
1214GN-180LV 1214GN-180LV Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 - 150 V 55-KR 1.2GHz ~ 1.4GHz Microchip Technology 17dB - 55-KR 60 mA HEMT 50 V - 180W
TN2640N3-G TN2640N3-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 2 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 740mW 4 ns 740mW Ta 220mA SWITCHING 5Ohm 20 ns SILICON N-Channel 5 Ω @ 500mA, 10V 2V @ 2mA 225pF @ 25V 15ns 22 ns 20V 400V 0.22A 220mA Tj 4.5V 10V ±20V
TN5335K1-G TN5335K1-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Tin 3 TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 FET General Purpose Power Not Qualified 1 Single 360mW 20 ns 360mW Ta 110mA SWITCHING 25 ns SILICON N-Channel 15 Ω @ 200mA, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 20V 350V 110mA Tj 22 pF 3V 10V ±20V
LND150N3-G LND150N3-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Through Hole Bulk 2014 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) No SVHC 5.33mm 4.19mm Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 BOTTOM 1 1 Single 740mW 90 ns 740mW Ta 30mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 450 ns 20V 500V Depletion Mode 30mA Tj 0V ±20V
VN2210N3-G VN2210N3-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Bulk 2011 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM WIRE 1 1 Single 1W 10 ns 740mW Tc 1.2A SWITCHING 50 ns SILICON N-Channel 350m Ω @ 4A, 10V 2.4V @ 10mA 500pF @ 25V 10ns 30 ns 20V 100V 1.2A Tj 65 pF 5V 10V ±20V
2N2327A 2N2327A Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 - TO-205AD, TO-39-3 Metal Can Microchip Technology Through Hole - TO-39 (TO-205AD) 250 V 2 A 800 mV 15A @ 60Hz 20 μA Standard Recovery 2.2 V 1.6 A
TN0610N3-G-P003 TN0610N3-G-P003 Microchip Technology 1.1034
Add to Cart

Min: 1

Mult: 1

0.00000000 download 20 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 6 ns 1W Tc 500mA SWITCHING 2Ohm 16 ns SILICON N-Channel 1.5 Ω @ 750mA, 10V 2V @ 1mA 150pF @ 25V 14ns 16 ns 20V 100V 0.5A 500mA Tj 3V 10V ±20V
MIC94031YM4-TR MIC94031YM4-TR Microchip Technology 0.8876
Add to Cart

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) TinyFET® Obsolete 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free -1A 4 TO-253-4, TO-253AA Surface Mount -55°C~150°C TJ -16V MOSFET (Metal Oxide) MIC94031 1 568mW 1Ohm SOT-143 568mW Ta 1A P-Channel 450mOhm @ 100mA, 10V 1.4V @ 250μA 100pF @ 12V 1A Ta 16V 100pF 2.7V 10V 16V 450 mΩ
TN0110N3-G-P002 TN0110N3-G-P002 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 2 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 500mA, 10V 2V @ 500μA 60pF @ 25V 3ns 3 ns 20V 0.35A 350mA Tj 100V 8 pF 4.5V 10V ±20V
VN0300L-G VN0300L-G Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 1W Tc 640mA SWITCHING SILICON N-Channel 1.2 Ω @ 1A, 10V 2.5V @ 1mA 190pF @ 20V 30V 30V 0.64A 640mA Tj 50 pF 5V 10V ±30V
VN2460N3-G-P003 VN2460N3-G-P003 Microchip Technology 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 10 ns 1W Ta 160mA SWITCHING 25Ohm 600V 25 ns SILICON N-Channel 20 Ω @ 100mA, 10V 4V @ 2mA 150pF @ 25V 10ns 20 ns 20V 160mA Tj 600V 25 pF 4.5V 10V ±20V
VN10KN3-G-P002 VN10KN3-G-P002 Microchip Technology 0.6407
Add to Cart

Min: 1

Mult: 1

0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 FET General Purpose Power 1 Single 1W Tc 310mA SWITCHING 5Ohm SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 310mA Tj 5 pF 5V 10V ±30V
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support