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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Diameter Length RoHS Status Lead Free Contact Plating Voltage - Rated Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Frequency Height Width Resistance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Gain Voltage Number of Elements Configuration Diode Type Tolerance Case Connection Current Rating (Amps) Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Noise Figure Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F HTS Mounting Package Height Package Length Package Width PCB changed Standard Package Name Supplier Package ECCN (US) Maximum Power Dissipation (mW) Reverse Recovery Time (trr) AEC Qualified Military Maximum Diode Capacitance (pF) Maximum Reverse Voltage (V) Maximum Series Resistance @ Maximum IF (Ohm) Typical Carrier Life Time (us) Maximum Forward Voltage (V)
2N4204 2N4204 Microchip Technology 0.0000
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0.00000000 * Microchip Technology
1011GN-30EP 1011GN-30EP Microchip Technology 0.0000
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CDLL4112D/TR CDLL4112D/TR Microchip Technology 0.0000
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0.00000000 - - Microchip Technology - - - -
TC8020K6-G TC8020K6-G Microchip Technology 0.0000
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0.00000000 download 17 Weeks Surface Mount Tray 2012 Active 3 (168 Hours) 56 EAR99 ROHS3 Compliant Tin No 56 56-VFQFN Exposed Pad Surface Mount 191.387631mg -55°C~150°C TJ ENHANCEMENT MODE e4 NICKEL PALLADIUM GOLD QUAD 260 40 12 6 COMPLEX N-CHANNEL AND P-CHANNEL 10 ns SWITCHING 8Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 6 N and 6 P-Channel 8 Ω @ 1A, 10V 2.4V @ 1mA 50pF @ 25V 15ns 15 ns -200V Standard 200V
TC7920K6-G TC7920K6-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 Active 1 (Unlimited) 12 EAR99 ROHS3 Compliant Lead Free Tin 12 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 12-VFDFN Exposed Pad Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) DUAL NO LEAD 260 40 Not Qualified 4 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR N-CHANNEL AND P-CHANNEL 10 ns SWITCHING 7Ohm 200V METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 2 N and 2 P-Channel 10 Ω @ 1A, 10V 2.4V @ 1mA 52pF @ 25V 15ns 15 ns Standard 200V
TC6320TG-G TC6320TG-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2010 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.65mm 3.9mm Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 DUAL GULL WING 260 40 TC6320 2 Other Transistors 2 N-CHANNEL AND P-CHANNEL 10 ns 2V -2A SWITCHING 7Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON N and P-Channel 7 Ω @ 1A, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 200V Standard
TC2320TG-G TC2320TG-G Microchip Technology 0.0000
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0.00000000 download 3 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant Tin No 8 LOW THRESHOLD 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.9mm Surface Mount 84.99187mg -55°C~150°C TJ ENHANCEMENT MODE e3 DUAL GULL WING 260 40 2 2 N-CHANNEL AND P-CHANNEL 10 ns 2A SWITCHING 7Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON N and P-Channel 7 Ω @ 1A, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 20V 200V Standard
DN2625DK6-G DN2625DK6-G Microchip Technology 0.0000
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0.00000000 download 16 Weeks Surface Mount Tray 2013 Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant LOW THRESHOLD 8-VDFN Exposed Pad 3.5Ohm Surface Mount 37.393021mg -55°C~150°C TJ 11A e3 MATTE TIN NO LEAD 260 40 R-PDSO-N8 2 FET General Purpose Power Not Qualified 250V 1 DRAIN Dual 10 ns 1.1A SWITCHING METAL-OXIDE SEMICONDUCTOR 10 ns SILICON 2 N-Channel (Dual) 3.5 Ω @ 1A, 0V 1000pF @ 25V 7.04nC @ 1.5V 20ns 20 ns 20V Depletion Mode
TC6320K6-G TC6320K6-G Microchip Technology 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 8 EAR99 4.89mm ROHS3 Compliant Tin No 8 8-VDFN Exposed Pad 1.37mm 3.91mm Surface Mount 37.393021mg -55°C~150°C TJ ENHANCEMENT MODE e3 DUAL 260 40 TC6320 2 Other Transistors 2 N-CHANNEL AND P-CHANNEL 10 ns 5.2A SWITCHING 7Ohm METAL-OXIDE SEMICONDUCTOR 20 ns SILICON N and P-Channel 7 Ω @ 1A, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 200V Standard
TC8220K6-G TC8220K6-G Microchip Technology 0.0000
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0.00000000 download 3 Weeks Surface Mount Tape & Reel (TR) 2013 Active 2 (1 Year) 12 EAR99 ROHS3 Compliant 12 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 12-VFDFN Exposed Pad Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) DUAL NO LEAD 260 40 Not Qualified 4 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR N-CHANNEL AND P-CHANNEL SWITCHING 7Ohm 200V METAL-OXIDE SEMICONDUCTOR SILICON 2 N and 2 P-Channel 6 Ω @ 1A, 10V 2.4V @ 1mA 56pF @ 25V Standard 200V
UM4001CR UM4001CR Microchip Technology 0.0000
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0.00000000 download Unconfirmed RoHS non-compliant Switch|Attenuator 2 HF|S Single
LXP1004-23-2/TR LXP1004-23-2/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.75pF @ 20V, 1MHz 10 mA 20V 600mOhm @ 10mA, 100MHz
DC35GN-15-D3 DC35GN-15-D3 Microchip Technology 0.0000
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0.00000000
UM4001SM UM4001SM Microchip Technology 0.0000
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0.00000000 download Unconfirmed RoHS non-compliant Attenuator|Switch 2 HF|S Single 8541.10.00.80 Surface Mount 3.76(Max) 5.72 3.76(Max) 2 Style SM Style SM EAR99 100000000 No No 3@100V 100 0.5@100mA 10 1@100mA
DN3535N8-G DN3535N8-G Microchip Technology 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 3 HIGH INPUT IMPEDANCE TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 1 1 DRAIN Single 1.6W 15 ns 1.6W Ta 230mA SWITCHING 20 ns SILICON N-Channel 10 Ω @ 150mA, 0V 360pF @ 25V 20ns 20 ns 20V 350V Depletion Mode 230mA Tj 0.5A 0V ±20V
UM7006D UM7006D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Attenuator|Switch 2 Single
DN3545N8-G DN3545N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 FAST SWITCHING TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 20 ns 1.6W Ta 200mA SWITCHING 30 ns SILICON N-Channel 20 Ω @ 150mA, 0V 360pF @ 25V 30ns 30 ns 20V 450V Depletion Mode 0.2A 450V 0.3A 0V ±20V
APT15DQ120BHBG APT15DQ120BHBG Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Standard TO-247-3 Fast Recovery =< 500ns, > 200mA (Io) 100 μA @ 1200 V 3.5 V @ 15 A -55°C ~ 175°C 1200 V 15A - 240 ns
UM7006B UM7006B Microchip Technology 0.0000
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0.00000000 download 2.28(Max) RoHS non-compliant Attenuator|Switch 2 Single
GMP4215-GM1/TR GMP4215-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.6pF @ 10V, 1MHz 100V 500mOhm @ 20mA, 100MHz
1214GN-180LV 1214GN-180LV Microchip Technology 0.0000
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0.00000000 - 150 V 55-KR 1.2GHz ~ 1.4GHz Microchip Technology 17dB - 55-KR 60 mA HEMT 50 V - 180W
APT30DQ120SG APT30DQ120SG Microchip Technology 0.0000
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0.00000000 download Obsolete RoHS Compliant Switching Diode 3 Single
VN2222LL-G VN2222LL-G Microchip Technology 0.4499
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0.00000000 download 6 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free Tin No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 FET General Purpose Power 1 Single 1W 10 ns 400mW Ta 1W Tc 230mA SWITCHING 10 ns SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 60V 0.099A 230mA Tj 8 pF 5V 10V ±30V
APT75DQ60SG APT75DQ60SG Microchip Technology 0.0000
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0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 25 μA @ 600 V 2.5 V @ 75 A -55°C ~ 175°C 75A - 31 ns
MV39002-P2715 MV39002-P2715 Microchip Technology 0.0000
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0.00000000 download Waffle Active RoHS Compliant VCO|Tuner 2 Single
SMX0502-M1 SMX0502-M1 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant Switch|Attenuator 2 UHF|VHF|HF Single
UMX9415SM UMX9415SM Microchip Technology 0.0000
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0.00000000 download Unconfirmed RoHS Compliant Switch 2 Single
LXS101-23-2 LXS101-23-2 Microchip Technology 0.0000
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0.00000000 download Unconfirmed Supplier Unconfirmed Schottky Diode 3 Dual Series
DN3525N8-G DN3525N8-G Microchip Technology 0.0000
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0.00000000 download 7 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free No 3 FAST SWITCHING TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - annealed FLAT 260 40 1 1 DRAIN Single 1.6W 20 ns 1.6W Ta 360mA SWITCHING 6Ohm 25 ns SILICON N-Channel 6 Ω @ 200mA, 0V 350pF @ 25V 25ns 25 ns 20V 250V Depletion Mode 360mA Tj 1A 0V ±20V
DN3135N8-G DN3135N8-G Microchip Technology 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-243AA No SVHC 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) 135A e3 Matte Tin (Sn) FLAT 260 40 1 FET General Purpose Power Not Qualified 350V 1 DRAIN Single 1.3W 10 ns 1.3W Ta 135mA SWITCHING 15 ns SILICON N-Channel 35 Ω @ 150mA, 0V 120pF @ 25V 15ns 15 ns 20V 350V Depletion Mode 135mA Tj 0V ±20V
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