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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Element Configuration Power Dissipation Breakdown Voltage Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Resistance - RDS(On) Voltage - Breakdown (V(BR)GSS)
SIS902DN-T1-GE3 SIS902DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Obsolete 1 (Unlimited) 6 EAR99 ROHS3 Compliant No 8 PowerPAK® 1212-8 Dual Surface Mount -55°C~150°C TJ ENHANCEMENT MODE C BEND 260 40 SIS902 8 S-XDSO-C6 15.4W 2 DRAIN 3.1W 17 ns 3A SWITCHING METAL-OXIDE SEMICONDUCTOR 12 ns SILICON 2 N-Channel (Dual) 186m Ω @ 3A, 10V 2.5V @ 250μA 175pF @ 38V 6nC @ 10V 18ns 9 ns 20V 75V Standard 4A 4A 8A
2N4861JTXL02 2N4861JTXL02 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube Obsolete 1 (Unlimited) Non-RoHS Compliant TO-206AA, TO-18-3 Metal Can Through Hole TO-206AA (TO-18)
SI3493DDV-T1-GE3 SI3493DDV-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant SOT-23-6 Thin, TSOT-23-6 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G6 1 1 SINGLE WITH BUILT-IN DIODE 2W 25 ns 3.6W Tc -7.5A 150°C SWITCHING 0.024Ohm 95 ns SILICON P-Channel 24m Ω @ 7.5A, 4.5V 1V @ 250μA 1825pF @ 10V 30nC @ 4.5V 8V -20V 8A 8A Tc 20V 1.8V 4.5V ±8V
2N5433 2N5433 Vishay Siliconix 0.0000
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0.00000000 download 9 Weeks Through Hole Tube 2009 Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant 100mA 3 TO-206AC, TO-52-3 Metal Can Through Hole -55°C~150°C TJ 300mW 300mW Single -25V 7Ohm TO-206AC (TO-52) 100mA N-Channel 30pF @ 0V -25V 30pF 100mA @ 15V 3V @ 3nA 25V
SI4564DY-T1-GE3 SI4564DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 TrenchFET® yes Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.75mm 21mOhm Surface Mount 506.605978mg -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 SI4564 8 2 Other Transistors 3.2W 3.1W 3.2W 2 N-CHANNEL AND P-CHANNEL 2W 42 ns 800mV 10A 150°C SWITCHING 40V METAL-OXIDE SEMICONDUCTOR 40 ns SILICON N and P-Channel 17.5m Ω @ 8A, 10V 2V @ 250μA 855pF @ 20V 31nC @ 10V 40ns 15 ns 20V Logic Level Gate 800 mV 8A 10A 9.2A 40V
SI7613DN-T1-GE3 SI7613DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 3.05mm ROHS3 Compliant No 8 PowerPAK® 1212-8 Unknown 1.04mm 3.05mm Surface Mount -50°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 40 8 S-XDSO-C5 1 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W 14 ns -1V 3.8W Ta 52.1W Tc 17A SWITCHING 42 ns SILICON P-Channel 8.7m Ω @ 17A, 10V 2.2V @ 250μA 2620pF @ 10V 87nC @ 10V 7ns 9 ns 16V -20V 35A 35A Tc 20V 60A 4.5V 10V ±16V
SIR808DP-T1-GE3 SIR808DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2015 TrenchFET® Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8 PowerPAK® SO-8 Unknown Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL C BEND 260 40 8 R-PDSO-C5 1 FET General Purpose Power Not Qualified 1 DRAIN Single 5 ns 1V 29.8W Tc 20A SWITCHING 14 ns SILICON N-Channel 8.9m Ω @ 17A, 10V 2.5V @ 250μA 815pF @ 12.5V 22.8nC @ 10V 10ns 7 ns 20V 25V 20A Tc 50A 22 mJ 4.5V 10V ±20V
SQS840EN-T1_GE3 SQS840EN-T1_GE3 Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2017 Automotive, AEC-Q101, TrenchFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant PowerPAK® 1212-8 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 7.6 ns 33W Tc 12A 21.6 ns N-Channel 20m Ω @ 7.5A, 10V 2.5V @ 250μA 1031pF @ 20V 22.5nC @ 10V 9.4ns 6.4 ns 20V 12A Tc 40V 4.5V 10V ±20V
IRFR210TRL IRFR210TRL Vishay Siliconix 3.4689
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0.00000000 download Surface Mount Tape & Reel (TR) 2016 Obsolete 1 (Unlimited) 150°C -55°C 6.73mm Non-RoHS Compliant Contains Lead 2.6A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.22mm Surface Mount 1.437803g -55°C~150°C TJ 200V MOSFET (Metal Oxide) 1 Single 8.2 ns 1.5Ohm D-Pak 2.5W Ta 25W Tc 2.6A 14 ns N-Channel 1.5Ohm @ 1.6A, 10V 4V @ 250μA 140pF @ 25V 8.2nC @ 10V 17ns 8.9 ns 20V 2.6A Tc 200V 140pF 10V ±20V 1.5 Ω
SI6413DQ-T1-GE3 SI6413DQ-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 21 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant No 8 8-TSSOP (0.173, 4.40mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN DUAL GULL WING 260 30 8 Other Transistors 1 Single 55 ns 1.05W Ta 7.2A SWITCHING 0.01Ohm 20V 305 ns SILICON P-Channel 10m Ω @ 8.8A, 4.5V 800mV @ 400μA 105nC @ 5V 120ns 160 ns 8V 7.2A Ta 20V 1.8V 4.5V ±8V
2N5547JTXV01 2N5547JTXV01 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube 2009 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-71-6 Through Hole
IRF9Z30PBF IRF9Z30PBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2007 yes Active 1 (Unlimited) 3 EAR99 10.41mm ROHS3 Compliant Lead Free No 3 TO-220-3 Unknown 9.01mm 4.7mm 140mOhm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN 3 1 1 TO-220AB DRAIN Single 74W 12 ns -4V 74W Tc 18A SWITCHING 21 ns SILICON P-Channel 140m Ω @ 9.3A, 10V 4V @ 250μA 900pF @ 25V 39nC @ 10V 110ns 64 ns 20V -50V 18A Tc 50V 60A 10V ±20V
IRFP450LCPBF IRFP450LCPBF Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Through Hole Tube Active 1 (Unlimited) 150°C -55°C 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 Unknown 20.7mm 5.31mm 400mOhm Through Hole 38.000013g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 190W 14 ns 4V 400mOhm TO-247-3 190W Tc 14A 30 ns N-Channel 400mOhm @ 8.4A, 10V 4V @ 250μA 2200pF @ 25V 74nC @ 10V 49ns 30 ns 30V 14A Tc 500V 2.2nF 10V ±30V 400 mΩ
IRFBC40AS IRFBC40AS Vishay Siliconix 0.3239
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0.00000000 download Surface Mount Tube 2017 Obsolete 1 (Unlimited) 150°C -55°C 10.67mm Non-RoHS Compliant Contains Lead 6.2A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~150°C TJ 600V MOSFET (Metal Oxide) 1 Single 125W 13 ns 1.2Ohm D2PAK 125W Tc 6.2A 31 ns N-Channel 1.2Ohm @ 3.7A, 10V 4V @ 250μA 1036pF @ 25V 42nC @ 10V 23ns 18 ns 30V 600V 6.2A Tc 600V 1.036nF 10V ±30V 1.2 Ω
IRFI820GPBF IRFI820GPBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2004 yes Active 1 (Unlimited) 3 10.63mm ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack, Isolated Tab Unknown 9.8mm 4.83mm 3Ohm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN 260 40 3 1 1 TO-220AB Single 30W 8 ns 4V 30W Tc 520 ns 2.1A SWITCHING 2kV 33 ns SILICON N-Channel 3 Ω @ 1.3A, 10V 4V @ 250μA 360pF @ 25V 24nC @ 10V 8.6ns 16 ns 20V 500V 2.1A Tc 8.4A 10V ±20V
2N4860JTXL02 2N4860JTXL02 Vishay Siliconix 0.0000
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0.00000000 18 Weeks Through Hole Tube Obsolete 1 (Unlimited) Non-RoHS Compliant TO-206AA, TO-18-3 Metal Can Through Hole TO-206AA (TO-18)
IRFBE30PBF IRFBE30PBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2008 Active 1 (Unlimited) 150°C -55°C 10.41mm ROHS3 Compliant Lead Free Tin 4.1A No 3 TO-220-3 Unknown 9.01mm 4.7mm 3Ohm Through Hole 6.000006g -55°C~150°C TJ 800V MOSFET (Metal Oxide) 48A 1 800V 1 Single 125W 12 ns 4V 3Ohm TO-220AB 125W Tc 720 ns 4.1A 82 ns N-Channel 3Ohm @ 2.5A, 10V 4V @ 250μA 1300pF @ 25V 78nC @ 10V 33ns 30 ns 20V 800V 4 V 4.1A Tc 800V 1.3nF 10V ±20V 3 Ω
2N4338 2N4338 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Bulk 2004 Obsolete 1 (Unlimited) Through Hole 175°C -55°C Non-RoHS Compliant 50mA No 3 TO-206AA, TO-18-3 Metal Can Unknown Through Hole -55°C~175°C TJ 300mW 300mW Single -50V 2.5kOhm TO-206AA (TO-18) N-Channel 7pF @ 15V -50V 50V 7pF 200μA @ 15V 300mV @ 100nA 50V
SI7288DP-T1-GE3 SI7288DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2014 TrenchFET® yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free Tin No 8 PowerPAK® SO-8 Dual Unknown 19mOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE PowerPAKSO-8 e3 C BEND 260 40 SI7288 8 R-XDSO-C6 2 FET General Purpose Powers 15.6W 2 DRAIN Dual 3.6W 12 ns 2.8V 20A SWITCHING METAL-OXIDE SEMICONDUCTOR 16 ns SILICON 2 N-Channel (Dual) 19m Ω @ 10A, 10V 2.8V @ 250μA 565pF @ 20V 15nC @ 10V 14ns 10 ns 20V 40V Standard 1.2 V 10A 40V 50A 5 mJ
2N4860JTX02 2N4860JTX02 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube 2016 Obsolete 1 (Unlimited) 200°C -65°C Non-RoHS Compliant Yes 3 TO-206AA, TO-18-3 Metal Can Through Hole Single -30V
SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay Siliconix 1.0957
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0.00000000 download 14 Weeks Surface Mount, Through Hole Tube 2013 yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 1 TO-252AA DRAIN Single 78W 14 ns 2V 78W Tc 7A SWITCHING 0.6Ohm 30 ns SILICON N-Channel 600m Ω @ 3A, 10V 4V @ 250μA 820pF @ 100V 48nC @ 10V 12ns 20 ns 20V 650V 7A 7A Tc 56 mJ 10V ±30V
SI5904DC-T1-E3 SI5904DC-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) TrenchFET® yes Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free No 8 8-SMD, Flat Lead No SVHC 75mOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) C BEND 260 40 SI5904 8 FET General Purpose Powers 1.1W 2 Dual 1.1W 12 ns 1.5V 3.1A METAL-OXIDE SEMICONDUCTOR 19 ns SILICON 2 N-Channel (Dual) 75m Ω @ 3.1A, 4.5V 1.5V @ 250μA 6nC @ 4.5V 35ns 35 ns 12V 20V Logic Level Gate 20V
IRFZ24 IRFZ24 Vishay Siliconix 0.3633
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0.00000000 download Through Hole Tube 2011 Obsolete 1 (Unlimited) 175°C -55°C 10.41mm Non-RoHS Compliant No 3 TO-220-3 9.01mm 4.7mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 13 ns 100mOhm TO-220AB 60W Tc 17A 25 ns N-Channel 100mOhm @ 10A, 10V 4V @ 250μA 640pF @ 25V 25nC @ 10V 58ns 42 ns 20V 17A Tc 60V 640pF 10V ±20V 100 mΩ
IRFD9123 IRFD9123 Vishay Siliconix 0.5852
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0.00000000 Through Hole Tube 2015 Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 4 4-DIP (0.300, 7.62mm) unknown Through Hole 639.990485mg MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL 4 R-PDIP-T3 1 Not Qualified 1.3W 1 TO-250AA DRAIN Single 1A 0.8Ohm SILICON P-Channel 600m Ω @ 600mA, 10V 4V @ 250μA 390pF @ 25V 18nC @ 10V 4V -100V 0.8A 1A Ta 100V
SIHG21N80AE-GE3 SIHG21N80AE-GE3 Vishay Siliconix 3.6929
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0.00000000 download 14 Weeks E Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-247AC 32W Tc N-Channel 235mOhm @ 11A, 10V 4V @ 250μA 1388pF @ 100V 72nC @ 10V 17.4A Tc 800V 10V ±30V
SIB422EDK-T1-GE3 SIB422EDK-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 TrenchFET® Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free No 6 PowerPAK® SC-75-6L Unknown 30mOhm Surface Mount 95.991485mg -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 1V 82mOhm PowerPAK® SC-75-6L Single 2.5W Ta 13W Tc 9A N-Channel 30mOhm @ 5A, 4.5V 1V @ 250μA 18nC @ 8V 8V 9A Tc 20V 1.5V 4.5V ±8V 30 mΩ
SI4174DY-T1-GE3 SI4174DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® Active 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm 9.5MOhm Surface Mount 186.993455mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 8 1 1 SINGLE WITH BUILT-IN DIODE 2.5W 14 ns 1V 2.5W Ta 5W Tc 17A SWITCHING 19 ns SILICON N-Channel 9.5m Ω @ 10A, 10V 2.2V @ 250μA 985pF @ 15V 27nC @ 10V 12ns 9 ns 20V 30V 17A Tc 4.5V 10V ±20V
2N4393 2N4393 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Bulk 2005 Obsolete 1 (Unlimited) 200°C -55°C Non-RoHS Compliant Lead Free 50mA No 3 TO-206AA, TO-18-3 Metal Can Through Hole -65°C~200°C TJ 1.8W 1.8W Single 1.8W -40V 100Ohm TO-206AA (TO-18) 100pA N-Channel 14pF @ 20V -40V 40V 14pF 5mA @ 20V 500mV @ 1nA 100Ohms 40V
VQ2001P VQ2001P Vishay Siliconix 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2005 Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant No 14 PDIP 1.200007g -55°C~150°C TJ 4 2W 2W 4 2W 2Ohm 600mA 4 P-Channel 2Ohm @ 1A, 12V 4.5V @ 1mA 150pF @ 15V 20V 30V Standard 600mA 30V 150pF 2 Ω
SIHG32N50D-GE3 SIHG32N50D-GE3 Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2012 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-247-3 Unknown Through Hole 38.000013g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-247AC DRAIN Single 27 ns 3V 390W Tc 30A SWITCHING 500V 58 ns SILICON N-Channel 150m Ω @ 16A, 10V 5V @ 250μA 2550pF @ 100V 96nC @ 10V 75ns 55 ns 30V 30A Tc 500V 89A 225 mJ 10V ±30V
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