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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS)
SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 3.05mm ROHS3 Compliant No 8 PowerPAK® 1212-8 Unknown 1.04mm 3.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 30 8 S-XDSO-C5 1 FET General Purpose Powers 1 DRAIN Single 12 ns 2.5V 1.5W Ta 21.1A SWITCHING 0.0053Ohm 36 ns SILICON N-Channel 5.3m Ω @ 21.1A, 10V 2.5V @ 250μA 21nC @ 4.5V 10ns 10 ns 20V 20V 13.5A Ta 60A 4.5V 10V ±20V
VQ2001P VQ2001P Vishay Siliconix 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2005 Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant No 14 PDIP 1.200007g -55°C~150°C TJ 4 2W 2W 4 2W 2Ohm 600mA 4 P-Channel 2Ohm @ 1A, 12V 4.5V @ 1mA 150pF @ 15V 20V 30V Standard 600mA 30V 150pF 2 Ω
IRFSL9N60ATRL IRFSL9N60ATRL Vishay Siliconix 0.0000
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0.00000000 download Through Hole Tape & Reel (TR) 2016 no Active 1 (Unlimited) 3 Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 170W Tc 9.2A SWITCHING 0.75Ohm 600V SILICON N-Channel 750m Ω @ 5.5A, 10V 4V @ 250μA 1400pF @ 25V 49nC @ 10V 9.2A Tc 600V 37A 290 mJ 10V ±30V
SI7108DN-T1-GE3 SI7108DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2009 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 3.05mm ROHS3 Compliant No 8 ULTRA-LOW RESISTANCE PowerPAK® 1212-8 Unknown 1.04mm 3.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL C BEND 260 30 8 S-XDSO-C5 1 FET General Purpose Powers 1 DRAIN Single 1.5W 10 ns 2V 1.5W Ta 22A SWITCHING 0.0049Ohm 60 ns SILICON N-Channel 4.9m Ω @ 22A, 10V 2V @ 250μA 30nC @ 4.5V 10ns 10 ns 16V 20V 14A Ta 60A 24 mJ 4.5V 10V ±16V
IRF644STRL IRF644STRL Vishay Siliconix 1.1975
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0.00000000 download Surface Mount Tape & Reel (TR) 1997 Obsolete 1 (Unlimited) 150°C -55°C 10.67mm Non-RoHS Compliant Contains Lead 14A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~150°C TJ 250V MOSFET (Metal Oxide) 1 Single 11 ns 280mOhm D2PAK 3.1W Ta 125W Tc 14A 53 ns N-Channel 280mOhm @ 8.4A, 10V 4V @ 250μA 1300pF @ 25V 68nC @ 10V 24ns 49 ns 20V 250V 14A Tc 250V 1.3nF 10V ±20V 280 mΩ
SUP53P06-20-E3 SUP53P06-20-E3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2009 TrenchFET® Active 1 (Unlimited) 3 EAR99 10.41mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.01mm 4.7mm 19.5MOhm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 1 Other Transistors TO-220AB Single 3.1W 10 ns -1V 3.1W Ta 104.2W Tc 9.2A 70 ns P-Channel 19.5m Ω @ 30A, 10V 3V @ 250μA 3500pF @ 25V 115nC @ 10V 7ns 40 ns 20V -60V 9.2A Ta 53A Tc 60V 4.5V 10V ±20V
SI3438DV-T1-E3 SI3438DV-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® Active 1 (Unlimited) 6 EAR99 3.05mm ROHS3 Compliant No 6 SOT-23-6 Thin, TSOT-23-6 1mm 1.65mm Surface Mount 19.986414mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 6 1 FET General Purpose Power 1 Single 2W 16 ns 2W Ta 3.5W Tc 5.5A SWITCHING 0.0355Ohm 16 ns SILICON N-Channel 35.5m Ω @ 5A, 10V 3V @ 250μA 640pF @ 20V 20nC @ 10V 17ns 10 ns 20V 40V 7.4A 7.4A Tc 20A 4.5V 10V ±20V
2N4119A-2 2N4119A-2 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Bulk 2009 Obsolete 1 (Unlimited) 175°C -55°C Non-RoHS Compliant No 3 TO-206AF, TO-72-4 Metal Can Through Hole -55°C~175°C TJ 300mW 300mW Single TO-206AF (TO-72) N-Channel 3pF @ 10V -40V 3pF 200μA @ 10V 2V @ 1nA 40V
SQ2351ES-T1_GE3 SQ2351ES-T1_GE3 Vishay Siliconix 1.1143
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2017 Automotive, AEC-Q101, TrenchFET® Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 3 TO-236-3, SC-59, SOT-23-3 115mOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 20 ns 115mOhm SOT-23-3 (TO-236) 2W Tc 3.2A 19 ns P-Channel 115mOhm @ 2.4A, 4.5V 1.5V @ 250μA 330pF @ 10V 5.5nC @ 4.5V 18ns 8 ns 12V 3.2A Tc 20V 2.5V 4.5V ±12V
SISF04DN-T1-GE3 SISF04DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download TrenchFET® Gen IV Active 1 (Unlimited) ROHS3 Compliant PowerPAK® 1212-8SCD Surface Mount -55°C~150°C TJ 5.2W Ta 69.4W Tc PowerPAK® 1212-8SCD 2 N-Channel (Dual) Common Drain 4mOhm @ 7A, 10V 2.3V @ 250μA 2600pF @ 15V 60nC @ 10V Standard 30A Ta 108A Tc 30V
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