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Discrete Semiconductors

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Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Number of Elements JEDEC-95 Code Case Connection Element Configuration Power Dissipation Breakdown Voltage Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS)
2N4859JTX02 2N4859JTX02 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube 2009 Obsolete 1 (Unlimited) 200°C -65°C Non-RoHS Compliant Yes 3 TO-206AA, TO-18-3 Metal Can Through Hole Single -30V
2N4339-E3 2N4339-E3 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Bulk 2009 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant No 3 TO-206AA, TO-18-3 Metal Can Unknown Through Hole -55°C~175°C TJ e3 Matte Tin (Sn) Other Transistors 300mW Single -57V JUNCTION N-Channel 7pF @ 15V -50V 500μA @ 15V 600mV @ 100nA 50V
SI4630DY-T1-E3 SI4630DY-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) 2015 TrenchFET® Active 1 (Unlimited) ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 3.5W Ta 7.8W Tc N-Channel 2.7mOhm @ 20A, 10V 2.2V @ 250μA 6670pF @ 15V 161nC @ 10V 40A Tc 25V 4.5V 10V ±16V
2N7002E 2N7002E Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Surface Mount Bulk 2009 Discontinued 1 (Unlimited) 150°C -55°C 3.04mm ROHS3 Compliant 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.02mm 1.4mm Surface Mount 8.193012mg -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 350mW 7.5Ohm SOT-23-3 (TO-236) 350mW Ta 240mA N-Channel 3Ohm @ 250mA, 10V 2.5V @ 250μA 21pF @ 5V 0.6nC @ 4.5V 20V 60V 2 V 240mA Ta 60V 21pF 4.5V 10V ±20V 3 Ω
IRFI520G IRFI520G Vishay Siliconix 4.3654
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0.00000000 download Through Hole Tube 2016 Obsolete 1 (Unlimited) 175°C -55°C 10.63mm Non-RoHS Compliant No 3 TO-220-3 Full Pack, Isolated Tab 9.8mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 8.8 ns 270mOhm TO-220-3 37W Tc 7.2A 19 ns N-Channel 270mOhm @ 4.3A, 10V 4V @ 250μA 360pF @ 25V 16nC @ 10V 30ns 20 ns 20V 7.2A Tc 100V 360pF 10V ±20V 270 mΩ
2N4416A 2N4416A Vishay Siliconix 0.0000
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0.00000000 download Through Hole Bulk 2004 Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant 10mA No 4 TO-206AF, TO-72-4 Metal Can 5.33mm Through Hole -50°C~150°C TJ 300mW 300mW Single 150Ohm TO-206AF (TO-72) 15mA N-Channel 4pF @ 15V -35V 35V 35V 4pF 5mA @ 15V 2.5V @ 1nA 35V
SIHB120N60E-GE3 SIHB120N60E-GE3 Vishay Siliconix 4.0597
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0.00000000 download 18 Weeks E Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK (TO-263) 179W Tc N-Channel 120mOhm @ 12A, 10V 5V @ 250μA 1562pF @ 100V 45nC @ 10V 25A Tc 600V 10V ±30V
SIHW33N60E-GE3 SIHW33N60E-GE3 Vishay Siliconix 0.0000
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0.00000000 download 19 Weeks Through Hole Tube 2007 yes Active 1 (Unlimited) 3 ROHS3 Compliant No 3 TO-3P-3 Full Pack Unknown Through Hole 38.000013g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Powers 1 TO-247AD Single 56 ns 2V 278W Tc 33A SWITCHING 0.099Ohm 150 ns SILICON N-Channel 99m Ω @ 16.5A, 10V 4V @ 250μA 3508pF @ 100V 150nC @ 10V 90ns 80 ns 4V 600V 33A Tc 88A 10V ±30V
SIA416DJ-T1-GE3 SIA416DJ-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Digi-Reel® 2013 TrenchFET® yes Active 1 (Unlimited) 3 EAR99 2.05mm ROHS3 Compliant Lead Free 6 PowerPAK® SC-70-6 Unknown 750μm 2.05mm 83MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 1 DRAIN Single 3.5W 25 ns 1.6V 3.5W Ta 19W Tc 11.3A SWITCHING 15 ns SILICON N-Channel 83m Ω @ 3.2A, 10V 3V @ 250μA 295pF @ 50V 10nC @ 10V 100ns 20V 100V 11.3A Tc 0.45 mJ 4.5V 10V ±20V
2N5114-E3 2N5114-E3 Vishay Siliconix 0.0000
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0.00000000 Through Hole Tube 2004 Obsolete 1 (Unlimited) 200°C -55°C ROHS3 Compliant -50mA 3 TO-206AA, TO-18-3 Metal Can Unknown Through Hole 500mW Single 45V 75Ohm TO-206AA (TO-18) -90mA 30V
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