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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Turn On Time-Max (ton) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Turn Off Time-Max (toff) Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS)
SIHF5N50D-E3 SIHF5N50D-E3 Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2012 Active 1 (Unlimited) 3 10.63mm ROHS3 Compliant No 3 TO-220-3 Full Pack Unknown 9.8mm 4.83mm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-220AB ISOLATED Single 12 ns 3V 30W Tc 5.3A SWITCHING 14 ns SILICON N-Channel 1.5 Ω @ 2.5A, 10V 5V @ 250μA 325pF @ 100V 20nC @ 10V 11ns 11 ns 30V 500V 5.3A Tc 10V ±30V
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Cut Tape (CT) 2016 TrenchFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 SC-89, SOT-490 No SVHC 420mOhm Surface Mount 29.993795mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT 1 1 Single 220mW 2 ns 1V 220mW Ta 530mA SWITCHING 16 ns SILICON N-Channel 420m Ω @ 500mA, 4.5V 1V @ 250μA 43pF @ 10V 2.7nC @ 8V 14ns 11 ns 8V 20V 1.5V 4.5V ±8V
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0.00000000 download 21 Weeks Through Hole Tube 2015 Active 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Full Pack 123mOhm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB ISOLATED Single 24 ns 39W Tc 28A SWITCHING 82 ns SILICON N-Channel 123m Ω @ 14A, 10V 4V @ 250μA 2714pF @ 100V 120nC @ 10V 40ns 39 ns 20V 600V 28A Tc 75A 10V ±30V
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2009 TrenchFET® yes Active 1 (Unlimited) 2 SMD/SMT EAR99 10.41mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 4 R-PSSO-G2 1 FET General Purpose Power 1 Single 18 ns 4.5V 133 ns 3.12W Ta 250W Tc 52A 0.094Ohm 34 ns SILICON N-Channel 38m Ω @ 20A, 15V 4.5V @ 250μA 4220pF @ 25V 185nC @ 15V 170ns 9 ns 25V 200V 200V 4.5 V 52A Tc 10V 15V ±25V
IRFU1N60APBF IRFU1N60APBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2005 Active 1 (Unlimited) 3 6.73mm ROHS3 Compliant No 3 TO-251-3 Short Leads, IPak, TO-251AA Unknown 6.22mm 2.38mm Through Hole 329.988449mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 260 40 3 1 1 DRAIN Single 36W 9.8 ns 4V 36W Tc 1.4A SWITCHING 7Ohm 18 ns SILICON N-Channel 7 Ω @ 840mA, 10V 4V @ 250μA 229pF @ 25V 14nC @ 10V 14ns 20 ns 30V 600V 1.4A Tc 5.6A 10V ±30V
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2015 TrenchFET® yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 6 PowerPAK® SC-70-6 Dual Unknown 28MOhm Surface Mount 28.009329mg -55°C~150°C TJ ENHANCEMENT MODE e3 MATTE TIN 260 40 SIA910E 6 2 FET General Purpose Powers 7.8W 2 DRAIN Dual 1.9W 10 ns 400mV 4.5A SWITCHING METAL-OXIDE SEMICONDUCTOR 25 ns SILICON 2 N-Channel (Dual) 28m Ω @ 5.2A, 4.5V 1V @ 250μA 455pF @ 6V 16nC @ 8V 12ns 12 ns 8V 12V Logic Level Gate 400 mV 12V
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0.00000000 download 8 Weeks Surface Mount Tube 2014 Active 1 (Unlimited) SMD/SMT 150°C -55°C 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.22mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 2.5W 7 ns 1.1Ohm D-Pak 2.5W Ta 42W Tc 400 ns 3.8A 20 ns N-Channel 1.1Ohm @ 2.3A, 10V 4V @ 250μA 260pF @ 25V 14nC @ 10V 13ns 12 ns 20V 250V 250V 4 V 3.8A Tc 250V 260pF 10V ±20V 1.1 Ω
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 TrenchFET® yes Active 1 (Unlimited) 2 EAR99 10.41mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.83mm 9.65mm 19mOhm Surface Mount 1.437803g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 4 R-PSSO-G2 1 Other Transistors 1 Single 125W 12 ns -1V 3.75W Ta 125W Tc -5.5A SWITCHING 80 ns SILICON P-Channel 19m Ω @ 30A, 10V 3V @ 250μA 3500pF @ 25V 115nC @ 10V 15ns 230 ns 20V -60V 55A 55A Tc 60V 4.5V 10V ±20V
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) TrenchFET® yes Active 1 (Unlimited) 5 EAR99 4.9mm ROHS3 Compliant Lead Free Tin No 8 PowerPAK® SO-8 Unknown 1.12mm 5.89mm 22mOhm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE S17-0173_SINGLE e3 DUAL FLAT 8 R-PDSO-F5 1 1 DRAIN Single 1.8W 10 ns 3V 1.8W Ta 6.2A 150°C SWITCHING 25 ns SILICON N-Channel 22m Ω @ 10.3A, 10V 3V @ 250μA 27nC @ 10V 10ns 10 ns 20V 60V 6.2A Ta 40A 40ns 4.5V 10V ±20V 74ns
IRF730BPBF IRF730BPBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2013 Active 1 (Unlimited) 3 ROHS3 Compliant No TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 12 ns 104W Tc 6A SWITCHING 1Ohm 400V 14 ns SILICON N-Channel 1 Ω @ 3A, 10V 5V @ 250μA 311pF @ 100V 18nC @ 10V 11ns 8 ns 30V 6A 6A Tc 400V 13A 104 mJ 10V ±30V
SI5480DU-T1-E3 SI5480DU-T1-E3 Vishay Siliconix 3.2442
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0.00000000 download Surface Mount Tape & Reel (TR) 2017 TrenchFET® Obsolete 1 (Unlimited) 3 EAR99 3mm ROHS3 Compliant PowerPAK® ChipFET™ Single 750μm 1.9mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL C BEND 260 40 8 R-XDSO-C3 1 Not Qualified 1 DRAIN Single 10 ns 3.1W Ta 31W Tc 12A SWITCHING 40 ns SILICON N-Channel 16m Ω @ 7.2A, 10V 3V @ 250μA 1230pF @ 15V 34nC @ 10V 10ns 8 ns 20V 30V 12A Tc 30A 4.5V 10V ±20V
SQV120N10-3M8_GE3 SQV120N10-3M8_GE3 Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 250W Tc 0.0038Ohm 100V SILICON N-Channel 3.8m Ω @ 20A, 10V 3.5V @ 250μA 7230pF @ 25V 190nC @ 10V 120A 120A Tc 100V 480A 266 mJ 10V ±20V
SIHD1K4N60E-GE3 SIHD1K4N60E-GE3 Vishay Siliconix 1.0973
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0.00000000 download 18 Weeks Bulk E Active 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-252AA 63W Tc N-Channel 1.45Ohm @ 500mA, 10V 5V @ 250μA 172pF @ 100V 7.5nC @ 10V 4.2A Tc 600V 10V ±30V
IRFU4105ZTR IRFU4105ZTR Vishay Siliconix 0.0000
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0.00000000 download Through Hole Tape & Reel (TR) 2003 Active 1 (Unlimited) Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-251AA 48W Tc 30A N-Channel 24.5mOhm @ 18A, 10V 4V @ 250μA 740pF @ 25V 27nC @ 10V 30A Tc 55V 740pF 10V ±20V 24.5 mΩ
SIDR392DP-T1-GE3 SIDR392DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen IV Active 1 (Unlimited) ROHS3 Compliant PowerPAK® SO-8 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® SO-8DC 6.25W Ta 125W Tc N-Channel 0.62mOhm @ 20A, 10V 2.2V @ 250μA 9530pF @ 15V 188nC @ 10V 82A Ta 100A Tc 30V 4.5V 10V +20V, -16V
IRF740S IRF740S Vishay Siliconix 0.8456
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0.00000000 download Surface Mount Tube 2016 Obsolete 1 (Unlimited) 150°C -55°C 10.67mm Non-RoHS Compliant Contains Lead 10A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~150°C TJ 400V MOSFET (Metal Oxide) 1 Single 14 ns 550mOhm D2PAK 3.1W Ta 125W Tc 10A 50 ns N-Channel 550mOhm @ 6A, 10V 4V @ 250μA 1400pF @ 25V 63nC @ 10V 27ns 24 ns 20V 400V 10A Tc 400V 1.4nF 10V ±20V 550 mΩ
SI4632DY-T1-E3 SI4632DY-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download 21 Weeks Surface Mount Tape & Reel (TR) 2012 yes Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL FLAT 260 40 8 FET General Purpose Power Not Qualified 1 Single 3.5W Ta 7.8W Tc 40A 0.0033Ohm 58 ns SILICON N-Channel 2.7m Ω @ 20A, 10V 2.6V @ 250μA 11175pF @ 15V 161nC @ 10V 69ns 8 ns 16V 25V 27A 40A Tc 70A 45 mJ 4.5V 10V ±16V
SQJQ904E-T1_GE3 SQJQ904E-T1_GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active 1 (Unlimited) 4 ROHS3 Compliant 6 PowerPAK® 8 x 8 Dual No SVHC unknown Surface Mount -55°C~175°C TJ ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G4 135W 75W 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DRAIN 2V 100A 0.0034Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 3.4m Ω @ 20A, 10V 3.5V @ 250μA 5900pF @ 20V 75nC @ 10V Standard 100A Tc 40V 300A 125 mJ
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0.00000000 Surface Mount Tape & Reel (TR) Discontinued 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) N-Channel 150V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant No 10 10-PolarPAK® (L) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN DUAL 260 30 10 R-XDSO-N4 FET General Purpose Powers 1 DRAIN Single 5.2W 22 ns 5.2W Ta 125W Tc 19.8A SWITCHING 0.0074Ohm 25 ns SILICON N-Channel 7.4m Ω @ 19.8A, 10V 4.4V @ 250μA 3100pF @ 30V 77nC @ 10V 10ns 10 ns 20V 60V 60A 60A Tc 60A 125 mJ 10V ±20V
IRFP264 IRFP264 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Tube 2015 Obsolete 1 (Unlimited) 150°C -55°C 15.87mm Non-RoHS Compliant Lead Free No 3 TO-247-3 20.7mm 5.31mm Through Hole 38.000013g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 280W 22 ns 75mOhm TO-247-3 280W Tc 38A 110 ns N-Channel 75mOhm @ 23A, 10V 4V @ 250μA 5400pF @ 25V 210nC @ 10V 99ns 92 ns 20V 38A Tc 250V 5.4nF 10V ±20V 75 mΩ
2N5432-2 2N5432-2 Vishay Siliconix 0.0000
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0.00000000 download Tube 2009 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-206AC, TO-52-3 Metal Can Through Hole -55°C~150°C TJ 300mW TO-206AC (TO-52) N-Channel 30pF @ 0V 150mA @ 15V 4V @ 3nA 25V
SIZ980DT-T1-GE3 SIZ980DT-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Active 1 (Unlimited) 6 EAR99 Non-RoHS Compliant 8-PowerWDFN unknown Surface Mount -55°C~150°C TJ ENHANCEMENT MODE NO LEAD NOT SPECIFIED NOT SPECIFIED YES R-PDSO-N6 20W 66W 2 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE DRAIN SOURCE SWITCHING 0.0067Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual), Schottky 6.7m Ω @ 15A, 10V, 1.6m Ω @ 19A, 10V 2.2V @ 250μA 930pF @ 15V 4600pF @ 15V 8.1nC @ 4.5V, 35nC @ 4.5V Standard 20A 20A Tc 60A Tc 30V 90A 11.2 mJ
SQJQ900E-T1_GE3 SQJQ900E-T1_GE3 Vishay Siliconix 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2016 Automotive, AEC-Q101, TrenchFET® Active 1 (Unlimited) 4 ROHS3 Compliant Lead Free PowerPAK® 8 x 8 Dual unknown Surface Mount -55°C~175°C TJ ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G4 75W 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DRAIN 0.0039Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 3.9m Ω @ 20A, 10V 2.5V @ 250μA 5900pF @ 20V 120nC @ 10V Standard 60A 100A Tc 40V 400A 125 mJ
IRFD010 IRFD010 Vishay Siliconix 2.3115
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0.00000000 download Through Hole Tube 2000 Obsolete 1 (Unlimited) Non-RoHS Compliant Contains Lead 1.7A 4 4-DIP (0.300, 7.62mm) Through Hole 639.990485mg -55°C~150°C TJ 50V MOSFET (Metal Oxide) 1 Single 200mOhm 4-DIP, Hexdip, HVMDIP 1W Tc 1.7A N-Channel 200mOhm @ 860mA, 10V 4V @ 250μA 250pF @ 25V 13nC @ 10V 50V 1.7A Tc 50V 250pF 10V ±20V 200 mΩ
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0.00000000 download 8 Weeks Through Hole Tube 2014 Active 1 (Unlimited) 175°C -55°C 10.63mm ROHS3 Compliant Lead Free -13A No 3 TO-220-3 Full Pack, Isolated Tab Unknown 9.8mm 4.83mm 200MOhm Through Hole 6.000006g -55°C~175°C TJ -100V MOSFET (Metal Oxide) 1 1 Single 42W 24 ns -4V 200mOhm TO-220-3 48W Tc -11A 51 ns P-Channel 200mOhm @ 6.6A, 10V 4V @ 250μA 1400pF @ 25V 61nC @ 10V 110ns 86 ns 20V -100V 11A Tc 100V 1.4nF 10V ±20V 200 mΩ
SI4368DY-T1-GE3 SI4368DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2009 TrenchFET® Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 186.993455mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN DUAL GULL WING 260 30 8 1 1 Single 25 ns 1.6W Ta 17A SWITCHING 0.0032Ohm 30V 172 ns SILICON N-Channel 3.2m Ω @ 25A, 10V 1.8V @ 250μA 8340pF @ 15V 80nC @ 4.5V 20ns 41 ns 12V 17A Ta 30V 4.5V 10V ±12V
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Unknown 2.7mOhm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL C BEND 260 30 8 R-XDSO-C5 1 FET General Purpose Powers 1 DRAIN Single 6.25W 1V 6.25W Ta 104W Tc 60A SWITCHING 60V SILICON N-Channel 2.7m Ω @ 20A, 10V 2.5V @ 250μA 4365pF @ 30V 96nC @ 10V 20V 1 V 60A Tc 60V 4.5V 10V ±20V
IRF720S IRF720S Vishay Siliconix 0.1880
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0.00000000 download Surface Mount Tube 2017 Obsolete 1 (Unlimited) 150°C -55°C 10.67mm Non-RoHS Compliant Contains Lead 3.3A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~150°C TJ 400V MOSFET (Metal Oxide) 1 Single 50W 10 ns 1.8Ohm D2PAK 3.1W Ta 50W Tc 3.3A 30 ns N-Channel 1.8Ohm @ 2A, 10V 4V @ 250μA 410pF @ 25V 20nC @ 10V 14ns 13 ns 20V 400V 3.3A Tc 400V 410pF 10V ±20V 1.8 Ω
SQD40N06-14L_GE3 SQD40N06-14L_GE3 Vishay Siliconix 1.6215
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0.00000000 download 12 Weeks Tape & Reel (TR) 2014 TrenchFET® Active 1 (Unlimited) ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) TO-252AA 75W Tc N-Channel 14mOhm @ 20A, 10V 2.5V @ 250μA 2105pF @ 25V 51nC @ 10V 40A Tc 60V 4.5V 10V ±20V
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