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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Package / Case Mounting Type Operating Temperature Technology Operating Mode Input Type HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Forward Current Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ 3 Single 800V 25A 2V 250A @ 60Hz 50mA Standard
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) ROHS3 Compliant No 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) 5 1 65W 65W Tc 25A N-Channel 13m Ω @ 12.5A, 10V 6160pF @ 10V 43nC @ 4.5V 20V 25A Ta 100V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2011 Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Powers Single 1.8W Ta 176W Tc 90A N-Channel 2.8m Ω @ 45A, 10V 4V @ 250μA 7050pF @ 25V 120nC @ 10V 90A Tc 40V 10V ±20V
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) TO-243AA Surface Mount 150°C MOSFET (Metal Oxide) 15W Tc N-Channel 800mV @ 1mA 3.2A Ta 16V ±5V
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0.00000000 download Tape & Reel (TR) 2002 yes Obsolete Vendor Undefined ROHS3 Compliant NOT SPECIFIED NOT SPECIFIED 8 YES 150°C Other Transistors Single P-CHANNEL 2W METAL-OXIDE SEMICONDUCTOR 7A
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0.00000000 download 16 Weeks Through Hole Tape & Reel (TR) 2010 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 BOTTOM NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 750mW Ta 400mA SWITCHING 5.9Ohm 250V SILICON N-Channel 5.7 Ω @ 200mA, 4V 80pF @ 25V 3.7nC @ 4V 0.4A 400mA Ta 250V 2.5V 4V ±10V
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