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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Forward Voltage Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Non-Repetitive Surge Current Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Resistor - Base (R1) Resistor - Emitter Base (R2)
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 Active 1 (Unlimited) EAR99 ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 3 FET General Purpose Power Single 17 ns 1.2W Ta 56W Tc 52A 47 ns N-Channel 14m Ω @ 26A, 10V 4V @ 250μA 3200pF @ 25V 57nC @ 10V 14ns 7 ns 20V 52A Tc 55V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tape & Reel (TR) 2008 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 14 ns 900mW Ta 1A SWITCHING 2.7Ohm 250V 46 ns SILICON N-Channel 2.6 Ω @ 500mA, 4V 140pF @ 25V 5.5nC @ 4V 17ns 16 ns 10V 1A 1A Ta 250V 2.5V 4V ±10V
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-247-3 Through Hole 150°C TJ Standard SINGLE NOT SPECIFIED NOT SPECIFIED RJH60F 3 Insulated Gate BIP Transistors 297.6W 297.6W 1 SINGLE WITH BUILT-IN DIODE COLLECTOR N-CHANNEL 25 ns 85A 600V 1.75V POWER CONTROL SILICON 138 ns 1.75V @ 15V, 45A 205 ns Trench 8V 400V, 30A, 5 Ω, 15V 58ns/131ns
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0.00000000 download 16 Weeks Through Hole Tube 2012 Active 1 (Unlimited) ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole 150°C TJ Standard RJH60D 3 Insulated Gate BIP Transistors 27.2W 34W N-CHANNEL Single 32 ns 100 ns 25A 600V 2.2V 85 ns 2.2V 2.2V @ 15V, 12A Trench 300V, 12A, 5 Ω, 15V 19nC 32ns/85ns 100μJ (on), 160μJ (off)
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 3 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.2W 13 ns 1.2W Ta 84W Tc 50A SWITCHING 40V 405 ns SILICON P-Channel 9.6m Ω @ 25A, 10V 2.5V @ 250μA 5000pF @ 10V 100nC @ 10V 13ns 180 ns 20V 50A Tc 40V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2008 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free 8-PowerWDFN 58mOhm Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 8 30W Tc 25A N-Channel 58m Ω @ 12.5A, 10V 1250pF @ 25V 20nC @ 10V 25A Ta 150V 10V ±30V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2004 yes Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free 16A No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount 150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 260 8 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 10 ns 2.5W Ta 16A SWITCHING 0.0099Ohm 45 ns SILICON N-Channel 6.7m Ω @ 8A, 10V 2650pF @ 10V 18nC @ 4.5V 25ns 4.2 ns 20V 16A Ta 4.5V 10V ±20V
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