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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Package / Case Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Voltage - DC Reverse (Vr) (Max) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max)
HAT2185WPWS-E HAT2185WPWS-E Renesas Electronics America 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 8-PowerWDFN Surface Mount 150°C MOSFET (Metal Oxide) 20W Tc N-Channel 190m Ω @ 5A, 10V 4.5V @ 1mA 430pF @ 25V 9.7nC @ 10V 10A Ta 150V 10V ±30V
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0.00000000 download 16 Weeks Through Hole Tube 2011 Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Through Hole 175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Powers Single 1.8W Ta 147W Tc 90A N-Channel 4.4m Ω @ 45A, 10V 4V @ 250μA 6000pF @ 25V 102nC @ 10V 90A Tc 55V 10V ±20V
UPA2738GR-E1-AT UPA2738GR-E1-AT Renesas Electronics America 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 8 8-PowerSOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Other Transistors Single 14 ns 1.1W Ta 10A 60 ns P-Channel 15m Ω @ 10A, 10V 1450pF @ 10V 37nC @ 10V 30ns 50 ns 20V 10A Ta 30V 4.5V 10V ±20V
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0.00000000 download 16 Weeks Through Hole Tube 2012 yes Active 1 (Unlimited) ROHS3 Compliant Lead Free No 3 TO-3PFM, SC-93-3 Through Hole 150°C TJ Standard RJH60D 3 50W 50W Single 50 ns 100 ns 80A 600V 2.2V 160 ns 2.2V @ 15V, 40A Trench 300V, 40A, 5 Ω, 15V 104nC 50ns/160ns 850μJ (on), 600μJ (off)
HS54095TZ-E HS54095TZ-E Renesas Electronics America 4.2185
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0.00000000 download 26 Weeks Through Hole Tape & Reel (TR) 2009 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 Short Body Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM WIRE NOT SPECIFIED NOT SPECIFIED 3 O-PBCY-W3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 750mW Ta 200mA SWITCHING 600V SILICON N-Channel 16.5 Ω @ 100mA, 10V 66pF @ 25V 4.8nC @ 10V 0.2A 200mA Ta 600V 10V ±30V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 8541.10.00.80 SINGLE GULL WING 4 R-PSSO-G2 150°C Rectifier Diodes SILICON 1 SINGLE Standard 10A ULTRA FAST RECOVERY 1 30A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 600V 3V @ 10A -55°C~150°C 600V 20A 600V 25 ns
2SK3377-Z-E2-AZ 2SK3377-Z-E2-AZ Renesas Electronics America 0.0000
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0.00000000 download Tape & Reel (TR) 2007 Obsolete Vendor Undefined 2 ROHS3 Compliant ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 150°C FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN N-CHANNEL 30W SWITCHING 0.078Ohm 60V METAL-OXIDE SEMICONDUCTOR SILICON 20A
CR05AM-16#F00 CR05AM-16#F00 Renesas Electronics America 0.0000
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0.00000000 download Last Time Buy 1 (Unlimited) ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~110°C TJ 800V 470mA 3mA 800mV 10A @ 60Hz 100μA Standard Recovery 1.8V 300mA
2SJ600-Z-E1-AZ 2SJ600-Z-E1-AZ Renesas Electronics America 0.0000
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0.00000000 download 20 Weeks Tape & Reel (TR) 2006 Obsolete Vendor Undefined EAR99 ROHS3 Compliant NOT SPECIFIED NOT SPECIFIED YES 150°C Other Transistors Single P-CHANNEL 45W METAL-OXIDE SEMICONDUCTOR 25A
NP100P06PLG-E1-AY NP100P06PLG-E1-AY Renesas Electronics America 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 3 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 28 ns 1.8W Ta 200W Tc 100A SWITCHING 0.0078Ohm 60V 275 ns SILICON P-Channel 6m Ω @ 50A, 10V 2.5V @ 1mA 15000pF @ 10V 300nC @ 10V 35ns 100 ns 20V 100A Tc 60V 300A 420 mJ 4.5V 10V ±20V
RJK60S7DPP-E0#T2 RJK60S7DPP-E0#T2 Renesas Electronics America 14.7595
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0.00000000 download Through Hole Tube 2012 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Single 27 ns 34.7W Tc 30A 55 ns N-Channel 125m Ω @ 15A, 10V 2300pF @ 25V 39nC @ 10V 28ns 9 ns 30V Super Junction 30A Tc 600V 10V +30V, -20V
CR03AM-12-A#F00 CR03AM-12-A#F00 Renesas Electronics America 0.0000
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0.00000000 Last Time Buy 1 (Unlimited) ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~110°C TJ 600V 470mA 3mA 800mV 20A @ 60Hz 30μA Standard Recovery 1.8V 100μA 300mA
RQA0011DNS#G0 RQA0011DNS#G0 Renesas Electronics America 5.6347
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 3-DFN Exposed Pad Surface Mount 150°C MOSFET (Metal Oxide) 15W Tc N-Channel 750mV @ 1mA 3.8A Ta 16V ±5V
CR12CM-12B#BB0 CR12CM-12B#BB0 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Tube 2013 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Through Hole -40°C~150°C 4 NO Silicon Controlled Rectifiers 600V 2mA 360 A SCR 600V 18.8A 15mA 1.5V 360A @ 60Hz 30mA Standard Recovery 1.6V 2mA 12A
NP90N04VUK-E1-AY NP90N04VUK-E1-AY Renesas Electronics America 6.0590
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) 3 1.2W Ta 147W Tc 90A N-Channel 2.8m Ω @ 45A, 10V 4V @ 250μA 5850pF @ 25V 102nC @ 10V 90A Tc 40V 10V ±20V
2SK4150TZ-E 2SK4150TZ-E Renesas Electronics America 0.8847
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0.00000000 download 16 Weeks Through Hole Tape & Reel (TR) 2010 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 BOTTOM NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 750mW Ta 400mA SWITCHING 5.9Ohm 250V SILICON N-Channel 5.7 Ω @ 200mA, 4V 80pF @ 25V 3.7nC @ 4V 0.4A 400mA Ta 250V 2.5V 4V ±10V
N0438N#YW N0438N#YW Renesas Electronics America 0.0000
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0.00000000 Obsolete
RJK1053DPB-00#J5 RJK1053DPB-00#J5 Renesas Electronics America 12.3164
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) ROHS3 Compliant No 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) 5 1 65W 65W Tc 25A N-Channel 13m Ω @ 12.5A, 10V 6160pF @ 10V 43nC @ 4.5V 20V 25A Ta 100V 4.5V 10V ±20V
RJH60V3BDPE-00#J3 RJH60V3BDPE-00#J3 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2012 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant 83 SC-83 Surface Mount 150°C TJ Standard GULL WING NOT SPECIFIED NOT SPECIFIED RJH60V 4 R-PSSO-G2 Insulated Gate BIP Transistors 113W 113W 1 COLLECTOR N-CHANNEL Single 600V 25 ns 35A 600V 2.2V POWER CONTROL SILICON 60 ns 2.2V @ 15V, 17A 165 ns Trench 30V 300V, 17A, 5 Ω, 15V 60nC 40ns/90ns 90μJ (on), 300μJ (off)
2SK3431-AZ 2SK3431-AZ Renesas Electronics America 14.7206
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0.00000000 download 16 Weeks Through Hole Tube 2002 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE 260 NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 120 ns 1.5W Ta 100W Tc 83A SWITCHING 0.0089Ohm 40V 350 ns SILICON N-Channel 5.6m Ω @ 42A, 10V 6100pF @ 10V 110nC @ 10V 1.8μs 440 ns 20V 83A Tc 40V 4V 10V ±20V
UPA2812T1L-E2-AT UPA2812T1L-E2-AT Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 8 Other Transistors Single 24 ns 1.5W Ta 30A 176 ns P-Channel 4.8m Ω @ 30A, 10V 3740pF @ 10V 100nC @ 10V 53ns 252 ns 20V 30A Tc 30V 4.5V 10V ±20V
2SJ598(0)-Z-E1-AZ 2SJ598(0)-Z-E1-AZ Renesas Electronics America 0.0000
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0.00000000 download Tape & Reel (TR) 2006 Obsolete Vendor Undefined ROHS3 Compliant NOT SPECIFIED NOT SPECIFIED 3
CR05AM-16A#B00 CR05AM-16A#B00 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole -40°C~125°C NOT SPECIFIED NOT SPECIFIED 3 Silicon Controlled Rectifiers 0.1mA 10 A 800V 3mA 470mA SCR 800V 800mV 10A @ 60Hz 100μA Sensitive Gate 1.8V 300mA
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant No 5 SC-100, SOT-669 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 260 20 5 R-PSSO-G4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 22 ns 20W Tc 15A SWITCHING 0.032Ohm 70 ns SILICON N-Channel 27.5m Ω @ 7.5A, 10V 3200pF @ 10V 46nC @ 10V 13ns 10 ns 20V 15A Ta 100V 60A 7V 10V ±20V
NP110N055PUJ-E1B-AY NP110N055PUJ-E1B-AY Renesas Electronics America 6.2673
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0.00000000 download Tape & Reel (TR) Obsolete Vendor Undefined 2 EAR99 ROHS3 Compliant ENHANCEMENT MODE 8541.29.00.95 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN N-CHANNEL 288W SWITCHING 0.0024Ohm 55V METAL-OXIDE SEMICONDUCTOR SILICON 110A 440A 435 mJ
UPA2766T1A-E1-AY UPA2766T1A-E1-AY Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2012 Active 1 (Unlimited) ROHS3 Compliant Lead Free No 8 8-PowerVDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) 50 ns 1.5W Ta 83W Tc 130A 380 ns N-Channel 1.82m Ω @ 39A, 4.5V 10850pF @ 10V 257nC @ 10V 160ns 365 ns 20V 130A Ta 30V 4.5V 10V ±20V
RJH60D1DPP-E0#T2 RJH60D1DPP-E0#T2 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2012 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 3 Insulated Gate BIP Transistors 30W 30W N-CHANNEL Single 70 ns 20A 600V 2.5V 2.5V @ 15V, 10A Trench 300V, 10A, 5 Ω, 15V 13nC 30ns/42ns 100μJ (on), 130μJ (off)
2SK2221-E 2SK2221-E Renesas Electronics America 12.2539
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0.00000000 download 16 Weeks Through Hole Tube 2005 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Copper, Tin 8A No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE SOURCE 100W Tc 8A SWITCHING SILICON N-Channel 600pF @ 10V 20V 8A 8A Ta ±20V
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0.00000000 download 16 Weeks Through Hole Tube yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-3PFM, SC-93-3 Through Hole 150°C TJ Standard NOT SPECIFIED NOT SPECIFIED 3 Insulated Gate BIP Transistors 40W 40W 1 ISOLATED N-CHANNEL Single 45A 600V 2.1V POWER CONTROL SILICON 85 ns 2.1V @ 15V, 22A 170 ns Trench 7.5V 300V, 22A, 5 Ω, 15V 75nC 45ns/100ns
KGF20N05D KGF20N05D Renesas Electronics America 0.0000
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0.00000000 download Last Time Buy 1 (Unlimited) ROHS3 Compliant 20-UFLGA, CSP Surface Mount -55°C~150°C TJ NOT SPECIFIED NOT SPECIFIED 2.5W Ta 2 N-Channel (Dual) Common Source 1.6m Ω @ 10A, 4.5V 900mV @ 250μA 865pF @ 5V 6.7nC @ 4.5V Standard 20A Tj 5.5V
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