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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) RoHS Status Package / Case Reach Compliance Code Mounting Type Operating Temperature Technology Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Power Dissipation-Max FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
TPH3206LS TPH3206LS Transphorm 0.0000
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0.00000000 download 10 Weeks Tube 2016 yes Obsolete 3 (168 Hours) Non-RoHS Compliant 3-PowerDFN Surface Mount -55°C~175°C TJ GaNFET (Gallium Nitride) 96W Tc N-Channel 180m Ω @ 11A, 8V 2.6V @ 500μA 760pF @ 480V 9.3nC @ 4.5V 17A Tc 600V 10V ±18V
TPH3208PS TPH3208PS Transphorm 0.0000
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0.00000000 download 12 Weeks Tube 2016 yes Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole -55°C~150°C TJ GaNFET (Cascode Gallium Nitride FET) NOT SPECIFIED NOT SPECIFIED 96W Tc N-Channel 130m Ω @ 13A, 8V 2.6V @ 300μA 760pF @ 400V 14nC @ 8V 20A Tc 650V 10V ±18V
TP65H150G4LSG TP65H150G4LSG Transphorm 0.0000
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0.00000000 Active
TPH3206PD TPH3206PD Transphorm 0.0000
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Min: 1

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0.00000000 download 10 Weeks Tube 2016 yes Not For New Designs 1 (Unlimited) RoHS Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ GaNFET (Gallium Nitride) NOT SPECIFIED NOT SPECIFIED 96W Tc N-Channel 180m Ω @ 11A, 8V 2.6V @ 500μA 760pF @ 480V 9.3nC @ 4.5V 17A Tc 600V 10V ±18V
TP65H070LSG TP65H070LSG Transphorm 0.0000
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0.00000000 download 12 Weeks TP65H070L Active 3 (168 Hours) 3-PowerDFN Surface Mount -55°C~150°C TJ GaNFET (Cascode Gallium Nitride FET) 96W Tc N-Channel 85m Ω @ 16A, 10V 4.8V @ 700μA 600pF @ 400V 9.3nC @ 10V 25A Tc 650V 10V ±20V
  • TPH3206LS
    TPH3206LS Transphorm

    GaNFET (Gallium Nitride) N-Channel Tube 180m Ω @ 11A, 8V ±18V 760pF @ 480V 9.3nC @ 4.5V 600V 3-PowerDFN

    Price: 0.0000

    RFQ
  • TPH3208PS
    TPH3208PS Transphorm

    GaNFET (Cascode Gallium Nitride FET) N-Channel Tube 130m Ω @ 13A, 8V ±18V 760pF @ 400V 14nC @ 8V 650V TO-220-3

    Price: 0.0000

    RFQ
  • TP65H150G4LSG
  • TPH3206PD
    TPH3206PD Transphorm

    GaNFET (Gallium Nitride) N-Channel Tube 180m Ω @ 11A, 8V ±18V 760pF @ 480V 9.3nC @ 4.5V 600V TO-220-3

    Price: 0.0000

    RFQ
  • TP65H070LSG
    TP65H070LSG Transphorm

    GaNFET (Cascode Gallium Nitride FET) N-Channel 85m Ω @ 16A, 10V ±20V 600pF @ 400V 9.3nC @ 10V 650V 3-PowerDFN

    Price: 0.0000

    RFQ
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