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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Material Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Impedance Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance Current HTS Code Power Rating JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Voltage Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Output Current Polarity Forward Current Forward Voltage Tolerance Case Connection Halogen Free Polarity/Channel Type Max Surge Current Element Configuration Voltage Tolerance Power Dissipation Breakdown Voltage Turn On Delay Time Max Reverse Leakage Current Test Current ESD Protection Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Zener Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Reference Voltage Voltage Tol-Max Voltage - Peak Reverse (Max) Impedance-Max Zener Current DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
BAV99 BAV99 ON Semiconductor 0.0000
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0.00000000 download 35 Weeks Surface Mount Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) 150°C -55°C 2.92mm RoHS Compliant Lead Free Tin 200mA No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.2mm 3.05mm Surface Mount 25mg 70V 1.5pF BAV99 350mW Standard 200mA 1V 2A Dual 350mW SOT-23-3 (TO-236) Small Signal =< 200mA (Io), Any Speed 2.5μA @ 70V 1.25V @ 150mA -55°C~150°C 70V 200mA 2.5μA 70V 2A 1 Pair Series Connection 1A 70V 200mA 6 ns 70V 6 ns 150°C
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0.00000000 download 7 Weeks LIFETIME (Last Updated: 2 weeks ago) Tape & Reel (TR) 2013 yes Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant Lead Free No 8 8-SMD, Flat Lead Surface Mount 150°C TJ e6 Tin/Bismuth (Sn/Bi) 8 YES 1.6W 1.6W 2 SEPARATE, 2 ELEMENTS PNP Halogen Free 5A 50V 190mV SILICON 2 PNP (Dual) 280MHz 100nA ICBO 50V -6V 200 200 @ 500mA 2V 190mV @ 125mA, 2.5A 280MHz
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BS107ARL1 BS107ARL1 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 250mA 3 EUROPEAN PART NUMBER TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) not_compliant Through Hole -55°C~150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) BOTTOM 240 30 3 FET General Purpose Power Not Qualified 1 Single 350mW 350mW Ta 250mA SWITCHING SILICON N-Channel 6.4 Ω @ 250mA, 10V 3V @ 1mA 60pF @ 25V 20V 200V 0.25A 250mA Ta 10V ±20V
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Tape & Reel (TR) UltraFET™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 75A No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 1.31247g -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 310W 14 ns 310W Tc 75A SWITCHING 41 ns SILICON N-Channel 14m Ω @ 75A, 10V 4V @ 250μA 3790pF @ 25V 238nC @ 20V 117ns 97 ns 20V 100V 75A Tc 10V ±20V
MBR830MFST3G MBR830MFST3G ON Semiconductor 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2013 yes Active 1 (Unlimited) 5 EAR99 150°C -40°C ROHS3 Compliant LOW POWER LOSS 8-PowerTDFN, 5 Leads not_compliant Surface Mount e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 SILICON 1 Schottky 8A EFFICIENCY 1 700mV CATHODE Single Fast Recovery =< 500ns, > 200mA (Io) 200μA @ 30V 700mV @ 8A -40°C~150°C 30V 8A 200μA 30V 150A
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0.00000000 download 14 Weeks ACTIVE (Last Updated: 5 days ago) Surface Mount Tape & Reel (TR) 2015 Automotive, AEC-Q101 yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free FREE WHEELING DIODE, LOW POWER LOSS DO-214AC, SMA not_compliant Surface Mount e3 Tin (Sn) DUAL C BEND R-PDSO-C2 150°C SILICON 1 SINGLE Schottky 4A EFFICIENCY 1 4A Fast Recovery =< 500ns, > 200mA (Io) 25μA @ 100V 660mV @ 4A -55°C~150°C 100V 4A 25μA 54.7pF @ 100V 1MHz
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 1 week ago) SuperFET® III yes Active RoHS Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 24W Tc N-Channel 600m Ω @ 3A, 10V 4.5V @ 600μA 465pF @ 400V 11nC @ 10V 6A Tc 650V 10V ±30V
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BC547CTAR BC547CTAR ON Semiconductor 0.0000
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0.00000000 download 7 Weeks Tape & Reel (TR) Automotive, AEC-Q101 yes Active 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN, 5 Leads not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3.9W Ta 179W Tc N-Channel 700μ Ω @ 50A, 10V 2V @ 280μA 9400pF @ 20V 149nC @ 10V 53A Ta 362A Tc 40V 4.5V 10V ±20V
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0.00000000 download Tube Obsolete 1 (Unlimited) TO-220-3 Through Hole 150°C TJ KSD401 25W TO-220-3 NPN 50μA ICBO 150V 2A 120 @ 400mA 10V 1V @ 50mA, 500mA 5MHz
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0.00000000 download 5 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Tube 2000 QFET® yes Active 1 (Unlimited) 3 EAR99 10.1mm ROHS3 Compliant Lead Free Tin 55A No 3 TO-220-3 9.4mm 4.7mm 26mOhm Through Hole 1.8g -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-220AB Single 155W 25 ns 155W Tc 55A SWITCHING 110 ns SILICON N-Channel 26m Ω @ 27.5A, 10V 4V @ 250μA 2730pF @ 25V 98nC @ 10V 250ns 140 ns 25V 100V 55A Tc 220A 10V ±25V
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0.00000000 download 42 Weeks ACTIVE (Last Updated: 1 week ago) Surface Mount Tape & Reel (TR) yes Active 1 (Unlimited) 3 EAR99 150°C -55°C ROHS3 Compliant Lead Free Tin 200mA No 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 30mg 70V 2.5pF 8541.10.00.70 e3 DUAL GULL WING MMBD6050 Rectifier Diodes 350mW SILICON 1 Standard 60mA 200mA 1.1V 2A Single 100nA Small Signal =< 200mA (Io), Any Speed 100nA @ 50V 1.1V @ 100mA -55°C~150°C 70V 200mA 70V 2A 4 ns 4 ns 2.5pF @ 0V 1MHz
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0.00000000 download Through Hole Bulk Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free No 2 DO-204AH, DO-35, Axial 55Ohm Through Hole -65°C~200°C 22V ZENER 34pF 8541.10.00.50 500mW WIRE BZX79C22 500mW SILICON 1 ZENER DIODE UNIDIRECTIONAL ±5% ISOLATED Single 5% 500mW 22V 50nA 5mA 50nA @ 15.4V 1.5V @ 100mA 22.05V 22V 5% 55Ohm 5mA
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