Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MX25U8033EM1I-12G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | MXSMIO™ | Not For New Designs | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | Lead Free | CAN BE ORGANISED AS 8 MBIT X 1 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 3.9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 1.8V | 40 | 8 | YES | 1.27mm | R-PDSO-G8 | 1.65V | Not Qualified | 1.8V | 2V | 8Mb 1M x 8 | Non-Volatile | 0.025mA | 1.65V~2V | 2MX4 | 4 | 8388608 bit | 80MHz | 0.000008A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | FLASH | SPI | 30μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC64T-I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | yes | Active | 3 (168 Hours) | 8 | EAR99 | 5V | 5.245mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.209, 5.30mm Width) | 2-Wire, I2C, Serial | 64 kb | 5.23mm | Surface Mount | -40°C~85°C TA | CMOS | 2.03mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC64 | 8 | 1.27mm | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F128J3BS-12 MET | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2005 | Obsolete | 4 (72 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64-FBGA | unknown | 10mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | MT28F128J3 | 64 | YES | 1mm | R-PBGA-B64 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 120ns | 128Mb 16M x 8 8M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 8MX16 | 16 | 134217728 bit | 0.00012A | 8 | 2.7V | NO | NO | YES | 128 | 4/8words | YES | YES | FLASH | Parallel | 128K | ||||||||||||||||||||||||||||||||||||||||||||
 |
6116LA25SOG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | 24-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT6116 | 24-SOIC | 25ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25640-10PI-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | EEPROM | AT25640 | 8-PDIP | 64Kb 8K x 8 | Non-Volatile | 1.8V~3.6V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761YSA200BQI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V35761 | 165-CABGA (13x15) | 3.1ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT7164S20Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2009 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | 1 | Non-RoHS Compliant | 28 | Parallel | 5.5V | not_compliant | 4.5V | 64 kb | CMOS | 3.556mm | 1 | 100mA | e0 | DUAL | J BEND | 225 | 5V | 20 | 28 | COMMERCIAL | SRAMs | Not Qualified | 5V | 3-STATE | 20 ns | RAM, SRAM - Asynchronous | 13b | 8KX8 | 8 | Asynchronous | 8b | YES | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V016SA12Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 44 | 3A991.B.2.B | 70°C | 0°C | 1 | 28.575mm | Non-RoHS Compliant | 44 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 44 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.15mA | 64KX16 | 16 | 1048576 bit | 0.01A | 12 ns | YES | COMMON | 3.15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67802S133PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 133MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.28mA | 512KX18 | 18 | 9437184 bit | 0.07A | 4.2 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT7164S20TPI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 85°C | -40°C | Non-RoHS Compliant | DIP | Parallel | RAM, SRAM - Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "IS61LPD51236A-250B3-TR") |
IS61LPD51236A-250B3-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Quad Port, Synchronous | 2.6ns | 18Mb 512K x 36 | Volatile | 3.135V~3.465V | 250MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RC28F640P30B85B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | StrataFlash™ | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 28F640P30 | 64Mb 4M x 16 | Non-Volatile | 1.7V~2V | 52MHz | FLASH | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61QDPB42M36A-500B4L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 15mm | ROHS3 Compliant | 165 | 165-LBGA | 13mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUADP | 1.4mm | 1 | BOTTOM | 1.8V | YES | 1mm | 1.71V | Not Qualified | 1.8V | 1.89V | 3-STATE | 8.4ns | 72Mb 2M x 36 | Volatile | 1.2mA | 1.71V~1.89V | 2MX36 | 36 | 75497472 bit | 500MHz | 0.36A | SEPARATE | 1.71V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761SA166BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | not_compliant | 166MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.32mA | 128KX36 | 36 | 4718592 bit | 0.03A | 3.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25P80-VMW6TGBA TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | M25P80 | 8-SO | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 75MHz | FLASH | SPI | 15ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F001N-55JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | AT49F001 | 55ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR82560C-15HBLI | ISSI, Integrated Silicon Solution Inc | 11.4123 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 78 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 78-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.5V | 10 | YES | 0.8mm | R-PBGA-B78 | 1.425V | 1.575V | 20ns | 2Gb 256M x 8 | Volatile | 1.425V~1.575V | 256MX8 | 8 | 2147483648 bit | 667MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761S200BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | Non-RoHS Compliant | 165 | Parallel | not_compliant | 200MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | Not Qualified | 3.465V | RAM, SRAM | 128KX36 | 36 | 4718592 bit | 3.1 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65802S150BGG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | unknown | 150MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | BOTTOM | BALL | 3.3V | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | Not Qualified | 3.465V | RAM, SRAM | 512KX18 | 18 | 9437184 bit | 3.8 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR16128D-125KBL | ISSI, Integrated Silicon Solution Inc | 3.6494 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.5V | 10 | YES | 0.8mm | R-PBGA-B96 | 1.425V | 1.575V | 20ns | 2Gb 128M x 16 | Volatile | 1.425V~1.575V | 128MX16 | 16 | 2147483648 bit | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71T75602S150PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 2.5V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 2.625V | 2.375V | 18 Mb | 150MHz | 14mm | 1.4mm | CMOS | 1 | 215mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 2.5V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 3.8 ns | 150MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.04A | 36b | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25JI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 85°C | -40°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 260mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||
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71256SA12YG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2011 | Active | 70°C | 0°C | 5V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 5.5V | 4.5V | 256 kb | 7.6mm | 2.67mm | 160mA | 12 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3558S200BQI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3558 | 165-CABGA (13x15) | 3.2ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71016S20YGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2004 | yes | Active | 3 (168 Hours) | 44 | 85°C | -40°C | 5V | 1 | 28.6mm | RoHS Compliant | Lead Free | No | 44 | Parallel | 5.5V | 4.5V | 1 Mb | 10.2mm | 2.9mm | CMOS | 3.683mm | 1 | 170mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 44 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 20 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT24C08WI-GT3JN | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | RoHS Compliant | Gold, Nickel | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | Surface Mount | -40°C~85°C TA | CAT24C08 | 900ns | 8Kb 1K x 8 | Non-Volatile | 1.7V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2556S133PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape and Reel | 2010 | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | Non-RoHS Compliant | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | not_compliant | 3.135V | 4.5 Mb | 133MHz | CMOS | 1 | 300mA | e0 | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | 0.65mm | SRAMs | Not Qualified | 3-STATE | 4.2 ns | RAM, SRAM | 17b | 36 | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S75PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 100-TQFP (14x14) | 7.5ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT70P3517S250RM | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2006 | 70°C | 0°C | Non-RoHS Compliant | FCBGA | Parallel | 250MHz | QDR, RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS64WV25616EDBLL-10BA3-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | no | Active | 3 (168 Hours) | 48 | 8mm | Non-RoHS Compliant | 48 | 48-TFBGA | 6mm | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1.2mm | 1 | BOTTOM | 225 | 3V | NOT SPECIFIED | YES | 0.75mm | 2.4V | Not Qualified | 2.5/3.3V | 3.6V | 3-STATE | AEC-Q100 | 4Mb 256K x 16 | Volatile | 0.05mA | 2.4V~3.6V | 256KX16 | 16 | 4194304 bit | 0.015A | 10 ns | COMMON | 2V | SRAM | Parallel | 10ns |
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24LC64T-I/SM Microchip Technology
Surface Mount 8 Pin Memory IC 24LC64 64 kb kb 5.245mm mm 3mA mA
Price: 0.0000
RFQ -
MT28F128J3BS-12 MET Micron Technology Inc.
3/3.3V V 64 Pin Memory IC MT28F128J3 13mm mm
Price: 0.0000
RFQ -
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IDT7164S20Y Integrated Device Technology (IDT)
5V V Surface Mount 28 Pin Memory IC 64 kb kb 100mA mA 8b b
Price: 0.0000
RFQ -
IDT71V016SA12Y8 Integrated Device Technology (IDT)
3.3V V 44 Pin Memory IC 28.575mm mm
Price: 0.0000
RFQ -
IDT71V67802S133PFI Integrated Device Technology (IDT)
2.53.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
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RC28F640P30B85B TR Micron Technology Inc.
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