Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MT29F4G16ABAEAH4-IT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Surface Mount | Bulk | Obsolete | 3 (168 Hours) | 85°C | -40°C | 3.3V | ROHS3 Compliant | 63 | 63-VFBGA | Parallel | 3.6V | 2.7V | 4 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 30mA | MT29F4G16 | 63-VFBGA (9x11) | 4Gb 256M x 16 | Non-Volatile | 29b | 2.7V~3.6V | Asynchronous | 16b | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71T75802S166BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 265mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.5 ns | RAM, SRAM | 20b | Synchronous | 0.045A | 18b | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70FL01GSAGBHBC10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Automotive, AEC-Q100, FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-TBGA | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 128MX8 | 8 | 1073741824 bit | SERIAL | 133MHz | 3V | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
CG7803AA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT70825L20PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | -40°C~85°C TA | SARAM | IDT70825 | 80-TQFP (14x14) | 20ns | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | RAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
NAND512R3A2SZA6E | Micron Technology Inc. | 2.2280 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2011 | yes | Obsolete | 3 (168 Hours) | 63 | 3A991.B.1.A | 1.8V | 11mm | ROHS3 Compliant | Copper, Silver, Tin | No | 63 | 63-TFBGA | 512 Mb | 1.05mm | Surface Mount | -40°C~85°C TA | 1.8V | FLASH - NAND | 8542.32.00.51 | 1 | 15mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | NAND512 | 63 | 0.8mm | 85°C | 1.8V | 512Mb 64M x 8 | Non-Volatile | 26b | 1.7V~1.95V | 64MX8 | 8 | Asynchronous | 8b | 512B | FLASH | Parallel | 50ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT25DL081-MHN-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | Active | 1 (Unlimited) | 8 | 1.8V | 6mm | ROHS3 Compliant | Gold | 8 | 8-UDFN Exposed Pad | SPI, Serial | 8 Mb | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 0.6mm | 1 | e4 | DUAL | 260 | 1.8V | NOT SPECIFIED | 8 | 1.27mm | 1.65V | Not Qualified | 1.95V | 5 ns | 8Mb 256Bytes x 4096 pages | Non-Volatile | 20b | 0.022mA | 1.65V~1.95V | 1 | 8b | 100MHz | 0.000014A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | SPI | FLASH | SPI | 8μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT53D512M64D4BP-046 WT ES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
QMP25FL008A0LMFI001 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
CY7C136-25JC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 52-LCC (J-Lead) | unknown | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 52 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V3556S100BGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3556 | 119-PBGA (14x22) | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT25DF081A-SSH-B | Microchip | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 1997 | 8 | 1MB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT24C02AN-10SI-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C02 | 8-SOIC | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V659S12DRGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 208-BFQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V659 | 4.5Mb 128K x 36 | Volatile | 3.15V~3.45V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL128LAGNFB013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, FL-L | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X 1 | 8-WDFN Exposed Pad | 5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 32MX4 | 4 | 134217728 bit | SERIAL | 133MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V9089S12PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V9089 | 12ns | 512Kb 64K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7025S55PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | 250mA | 55 ns | 16kB | RAM, SDR, SRAM | 13b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71V3559S85PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW-THROUGH ARCHITECHTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 91MHz | 14mm | 1.4mm | CMOS | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 8.5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.04A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT53E2D1BFW-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F2G08ABAEAWP:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Bulk | 2010 | Active | 3 (168 Hours) | 48 | 3A991.B.1.A | 3.3V | 18.4mm | ROHS3 Compliant | Lead Free | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 2 Gb | 1.2mm | Surface Mount | 0°C~70°C TA | FLASH - NAND | 8542.32.00.51 | 1 | 35mA | DUAL | 3.3V | MT29F2G08 | 0.5mm | 70°C | 3.3V | 2Gb 256M x 8 | Non-Volatile | 29b | 2.7V~3.6V | 256MX8 | 8 | Asynchronous | 0.0001A | 25 ns | 8b | NO | NO | YES | 2K | 2kB | YES | FLASH | Parallel | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT53B256M64D2NK-062 WT ES:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 256M x 64 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7052L35GB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 108-BPGA | Through Hole | -55°C~125°C TA | SRAM - Quad Port, Asynchronous | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STK11C88-NF25 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1994 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | 5V | 17.935mm | ROHS3 Compliant | Lead Free | No | 28 | 28-SOIC (0.295, 7.50mm Width) | 256 kb | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 2.68mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | STK11C88 | 28 | YES | 1.27mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 0.097mA | 4.5V~5.5V | 32KX8 | 8 | 8b | 0.003A | 25 ns | NVSRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MX25V8006EM1I-13G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tube | 2010 | MX25xxx05/06 | Not For New Designs | 3 (168 Hours) | 8 | 3A991.B.1.B.1 | 3.6V | 4.9mm | ROHS3 Compliant | Lead Free | 8-SOIC (0.154, 3.90mm Width) | 8 Mb | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 8542.32.00.51 | 1 | 12mA | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | 8 | 1.27mm | R-PDSO-G8 | 2.35V | Not Qualified | 2.5/3.3V | 85°C | 9 μs | 8Mb 1M x 8 | Non-Volatile | 2.35V~3.6V | 4MX2 | 2 | SERIAL | 75MHz | 0.00001A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI | 300μs, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71V321L55JI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 16Kb 2K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
40060108 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7134LA35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT27C512R-90PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | EPROM - OTP | AT27C512 | 28-PDIP | 90ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
JS28F640J3D75E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2007 | StrataFlash™ | Obsolete | 3 (168 Hours) | 56 | ROHS3 Compliant | 56 | 56-TFSOP (0.724, 18.40mm Width) | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | DUAL | 28F640J3 | YES | 0.5mm | Not Qualified | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.054mA | 2.7V~3.6V | 4MX16 | 16 | Asynchronous | 0.00012A | 75 ns | 8 | NO | NO | YES | 64 | 4/8words | YES | YES | FLASH | Parallel | 75ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
M29W640FB70N6E | Micron Technology Inc. | 12.9000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tray | 2006 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | 48 | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 30 | M29W640 | 48 | YES | 0.5mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.02mA | 2.7V~3.6V | 4MX16 | 16 | 67108864 bit | 0.0001A | 70 ns | 8 | 3V | YES | YES | YES | 8127 | 4/8words | YES | YES | FLASH | Parallel | 70ns | 8K64K | BOTTOM |
-
MT29F4G16ABAEAH4-IT:E Micron Technology Inc.
Surface Mount Memory IC MT29F4G16 4 Gb kb 30mA mA 16b b
Price: 0.0000
RFQ -
71T75802S166BGI Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 18 Mb kb 14mm mm 265mA mA 18b b
Price: 0.0000
RFQ -
S70FL01GSAGBHBC10 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-S Memory IC Automotive, AEC-Q100, FL-S Series 8mm mm
Price: 0.0000
RFQ -
-
-
NAND512R3A2SZA6E Micron Technology Inc.
Surface Mount 63 Pin Memory IC NAND512 512 Mb kb 11mm mm 15mA mA 8b b
Price: 2.2280
RFQ -
-
-
-
-
-
-
-
-
S25FL128LAGNFB013 Cypress Semiconductor Corp
Automotive, AEC-Q100, FL-L Memory IC Automotive, AEC-Q100, FL-L Series 6mm mm
Price: 0.0000
RFQ -
-
7025S55PF8 Integrated Device Technology (IDT)
Surface Mount Memory IC 128 kb kb 14mm mm 250mA mA 16b b
Price: 0.0000
RFQ -
71V3559S85PFG Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 225mA mA 18b b
Price: 0.0000
RFQ -
-
MT29F2G08ABAEAWP:E Micron Technology Inc.
Surface Mount Memory IC MT29F2G08 2 Gb kb 18.4mm mm 35mA mA 8b b
Price: 0.0000
RFQ -
-
-
STK11C88-NF25 Cypress Semiconductor Corp
5V V 28 Pin Memory IC STK11C88 256 kb kb 17.935mm mm
Price: 0.0000
RFQ -
MX25V8006EM1I-13G Macronix
2.5/3.3V V Surface Mount MX25xxx05/06 8 Pin Memory IC MX25xxx05/06 Series 8 Mb kb 4.9mm mm 12mA mA
Price: 0.0000
RFQ -
-
-
7134LA35J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 32 kb kb 19mm mm 210mA mA 8b b
Price: 0.0000
RFQ -
-
JS28F640J3D75E Micron Technology Inc.
3/3.3V V StrataFlash™ Memory IC StrataFlash™ Series 28F640J3 64 Mb kb
Price: 0.0000
RFQ -
M29W640FB70N6E Micron Technology Inc.
3/3.3V V 48 Pin Memory IC M29W640 18.4mm mm
Price: 12.9000
RFQ


.png)


















Need Help?

