Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Self Refresh | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BRCB064GWZ-3E2 | ROHM Semiconductor | 2.8608 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Cut Tape (CT) | 2013 | Discontinued | 1 (Unlimited) | 6 | 1.5mm | ROHS3 Compliant | 6-XFBGA, CSPBGA | 2-Wire, I2C, Serial | 1mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.36mm | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | YES | 0.4mm | R-PBGA-B6 | 1.6V | Not Qualified | 1.8/5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.0039mA | 1.6V~5.5V | 8KX8 | 8 | 65536 bit | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010D00R | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006S20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | 290mA | 20 ns | 16kB | RAM, SDR, SRAM | 14b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G01FV-3GTE2 | ROHM Semiconductor | 0.6106 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Tin | 8 | SEATED HT-CALCULATED | 8-LSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 1 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.35mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | BR24G01 | 0.65mm | 1.7V | 5.5V | 900 ns | 1Kb 128 x 8 | Non-Volatile | 1.6V~5.5V | 8 | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT47H256M8EB-3:C TR") |
MT47H256M8EB-3:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 60-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 60-FBGA (9x11.5) | 450ps | 2Gb 256M x 8 | Volatile | 1.7V~1.9V | 333MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W29GL128CH9B TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W632GU6MB12I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-VFBGA | 7.5mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7140LA25PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 170mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM1808B-PG | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | F-RAM™ | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 28-DIP | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | FRAM | Parallel | 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28C010E-12TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 1997 | yes | Active | 3 (168 Hours) | 32 | 5V | 18.4mm | ROHS3 Compliant | Lead Free | Tin | No | 32 | 32-TFSOP (0.724, 18.40mm Width) | 1 Mb | 8mm | Surface Mount | -40°C~85°C TC | CMOS | 1.2mm | 1 | 40mA | DUAL | 5V | AT28C010 | 0.5mm | 5V | 120ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 0.0002A | 10000 Write/Erase Cycles | 10ms | 5V | YES | YES | NO | 128words | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67903S75PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67903 | 7.5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 117MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416YS15PHG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2008 | yes | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | RoHS Compliant | No | 44 | TSOP | Parallel | 3.6V | 3V | 4 Mb | CMOS | 1 | 170mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM - Asynchronous | 18b | 16 | Asynchronous | 0.02A | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT6116SA35TPI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 24-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | SRAM - Asynchronous | IDT6116 | 24-PDIP | 35ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128S10FHI020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2011 | GL-S | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 100ns | 128Mb 8M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 8MX16 | 16 | 134217728 bit | 0.0001A | 2.7V | YES | YES | YES | 128 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT70T631S12DDI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 4 (72 Hours) | 144 | 3A991.B.2.A | 85°C | -40°C | 2 | 20mm | Non-RoHS Compliant | TQFP | Parallel | not_compliant | 20mm | CMOS | ASYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 2.5V | 30 | 144 | INDUSTRIAL | YES | 0.5mm | S-PQFP-G144 | 2.4V | SRAMs | Not Qualified | 2.52.5/3.3V | 2.6V | 3-STATE | RAM, SRAM | 0.395mA | 256KX18 | 18 | 4718592 bit | 0.02A | 12 ns | COMMON | 2.4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V416S10BE | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2013 | no | Active | 4 (72 Hours) | 48 | 70°C | 0°C | 3.3V | 1 | 9mm | RoHS Compliant | Contains Lead | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | 200mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 10 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 0.02A | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
QS7026A-20J | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | QS7026A | no | Obsolete | NOT SPECIFIED | 84 | ROHS3 Compliant | SEMAPHORE | Surface Mount | 0°C~70°C | CMOS | ASYNCHRONOUS | 1 | e0 | TIN LEAD | QUAD | J BEND | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | S-PQCC-J84 | 4.5V | COMMERCIAL | 5.5V | 256Kb 16K x 16 | Volatile | 5V | 16KX16 | 16 | 262144 bit | PARALLEL | 50MHz | 20 ns | SRAM | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V09L20PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 1 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e3 | Matte Tin (Sn) | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | YES | 0.5mm | SRAMs | 3-STATE | 20 ns | 128kB | RAM, SRAM | 34b | 0.003A | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7133LA35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 16b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V26S55G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | Active | 70°C | 0°C | 3.3V | 2 | 27.94mm | RoHS Compliant | Contains Lead | No | 84 | Parallel | 3.6V | 3V | 256 kb | 27.94mm | 3.68mm | 140mA | 55 ns | RAM, SRAM | 14b | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7134LA55L48B | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 1999 | Active | 125°C | -55°C | 5V | 2 | 14.2mm | RoHS Compliant | Contains Lead | No | 48 | LCC | Parallel | 5.5V | 4.5V | 32 kb | 14.22mm | 1.78mm | 220mA | 55 ns | RAM, SRAM | 12b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS41C16100C-50TI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | ROHS3 Compliant | 50-TSOP (0.400, 10.16mm Width), 44 Leads | Surface Mount | -40°C~85°C TA | DRAM - EDO | DUAL | 5V | YES | 0.8mm | R-PDSO-G44 | Not Qualified | 5V | 3-STATE | 25ns | 16Mb 1M x 16 | Volatile | 0.09mA | 4.5V~5.5V | 1MX16 | 16 | 16777216 bit | 0.001A | COMMON | 1024 | YES | DRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7028L15PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2005 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 1 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 340mA | e3 | MATTE TIN | QUAD | GULL WING | 260 | 5V | 30 | 100 | COMMERCIAL | 0.5mm | 15 ns | 128kB | RAM, SDR, SRAM | 32b | 64KX16 | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16160G-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 4.4275 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | 3.3V | ROHS3 Compliant | 54 | 54-TFBGA | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM | BOTTOM | 3.3V | YES | 0.8mm | Not Qualified | 3-STATE | 5.4ns | 256Mb 16M x 16 | Volatile | 13b | 0.16mA | 3V~3.6V | 16MX16 | 16 | 16b | 166MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C516-45JU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | ROHS3 Compliant | 44-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | EPROM - OTP | AT27C516 | 45ns | 512Kb 32K x 16 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M87C257-15C6 | STMicroelectronics | 3.7120 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | Obsolete | 3 (168 Hours) | 32 | EAR99 | 5V | 13.97mm | ROHS3 Compliant | No | 32 | 32-LCC (J-Lead) | 256 kb | 11.43mm | Surface Mount | -40°C~85°C TA | EPROM - OTP | 3.56mm | 1 | 30mA | e3 | Matte Tin (Sn) | QUAD | 245 | 5V | 40 | M87C257 | 32 | 1.27mm | OTP ROMs | 5V | 3-STATE | 150ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 0.0001A | COMMON | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS8C801825-QC75N | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2010 | yes | Active | 3 (168 Hours) | 100 | 3.3V | 20mm | ROHS3 Compliant | Lead Free | 100 | 100-LQFP | 8 Mb | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 117MHz | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 100 | YES | 0.65mm | 3.135V | 3.465V | 7.5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 512KX18 | 18 | SRAM | Parallel | 8.5ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128S90DHA010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2017 | GL-S | Active | 3 (168 Hours) | 64 | 3V | 9mm | ROHS3 Compliant | 64 | 64-LBGA | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | 3.6V | 90ns | AEC-Q100 | 128Mb 8M x 16 | Non-Volatile | 23b | 2.7V~3.6V | 16MX8 | 8 | 3V | 32B | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25JI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 85°C | -40°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 130mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | INDUSTRIAL | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.004A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7008S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 5.5V | 4.5V | 512 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 305mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 64kB | RAM, SDR, SRAM | 32b | 64KX8 | Asynchronous | 0.015A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA100BGGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2006 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 255mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON |
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7006S20PF8 Integrated Device Technology (IDT)
Surface Mount Memory IC 128 kb kb 14mm mm 290mA mA 8b b
Price: 0.0000
RFQ -
BR24G01FV-3GTE2 ROHM Semiconductor
Surface Mount Memory IC BR24G01 1 kb kb 4.4mm mm
Price: 0.6106
RFQ -
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7140LA25PF8 Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 8 kb kb 14mm mm 170mA mA 8b b
Price: 0.0000
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AT28C010E-12TU Microchip Technology
5V V Surface Mount Memory IC AT28C010 1 Mb kb 18.4mm mm 40mA mA
Price: 0.0000
RFQ -
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71V416YS15PHG Integrated Device Technology (IDT)
Surface Mount Memory IC 4 Mb kb 170mA mA 16b b
Price: 0.0000
RFQ -
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S29GL128S10FHI020 Cypress Semiconductor Corp
3/3.3V V GL-S Memory IC GL-S Series 13mm mm
Price: 0.0000
RFQ -
IDT70T631S12DDI Integrated Device Technology (IDT)
2.52.5/3.3V V 144 Pin Memory IC 20mm mm
Price: 0.0000
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71V416S10BE Integrated Device Technology (IDT)
Surface Mount 48 Pin Memory IC 4 Mb kb 9mm mm 200mA mA 16b b
Price: 0.0000
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7133LA35J8 Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 32 kb kb 24mm mm 250mA mA 16b b
Price: 0.0000
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70V26S55G Integrated Device Technology (IDT)
Through Hole Memory IC 256 kb kb 27.94mm mm 140mA mA 16b b
Price: 0.0000
RFQ -
7134LA55L48B Integrated Device Technology (IDT)
Surface Mount Memory IC 32 kb kb 14.2mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
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7028L15PFG Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 1 Mb kb 14mm mm 340mA mA 16b b
Price: 0.0000
RFQ -
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M87C257-15C6 STMicroelectronics
5V V Surface Mount 32 Pin Memory IC M87C257 256 kb kb 13.97mm mm 30mA mA
Price: 3.7120
RFQ -
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S29GL128S90DHA010 Cypress Semiconductor Corp
GL-S Memory IC GL-S Series 128 Mb kb 9mm mm
Price: 0.0000
RFQ -
71V321L25JI8 Integrated Device Technology (IDT)
Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 130mA mA 8b b
Price: 0.0000
RFQ -
7008S25J Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 512 kb kb 29.21mm mm 305mA mA 8b b
Price: 0.0000
RFQ -
71V3556SA100BGGI8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 255mA mA 36b b
Price: 0.0000
RFQ
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