Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BR24T32FVJ-WE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 9 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Copper, Tin | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 32 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | e3 | Matte Tin (Sn) | DUAL | 225 | 2.5V | NOT SPECIFIED | 0.65mm | S-PDSO-G8 | 1.6V | Not Qualified | 1.8/5V | 5.5V | 900 ns | 32Kb 4K x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 4KX8 | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342SA25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 280mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24T02FV-WGE2 | ROHM Semiconductor | 0.1977 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Cut Tape (CT) | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | SEATED HT-CALCULATED | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.35mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | 0.65mm | R-PDSO-G8 | 1.6V | Not Qualified | 1.8/5V | 5.5V | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 256X8 | 8 | 2048 bit | SERIAL | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | MICROWIRE | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G56FVT-3GE2 | ROHM Semiconductor | 0.3292 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Tin | 8 | ALSO AVAILABLE 1.7V-2.5V OPERATES WITH 1MHZ, 2.5V-4.5V OPERATES WITH 2MHZ | 8-TSSOP (0.173, 4.40mm Width) | Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | BR93G56 | 0.65mm | 4.5V | 5.5V | 200 ns | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.7V~5.5V | 16 | 3MHz | 8 | 5ms | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S99-50200") |
S99-50200 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
N25Q128A13ESFA0F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | N25Q128A13 | 128Mb 32M x 4 | Non-Volatile | 2.7V~3.6V | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53D4DANW-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Obsolete | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C256E-25UM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Through Hole | Tray | 1997 | no | Active | 1 (Unlimited) | 28 | 5V | 16.51mm | Non-RoHS Compliant | Contains Lead | Lead, Tin | 28 | AUTOMATIC WRITE | 28-BCPGA | Parallel, SPI | 256 kb | 250GHz | 13.97mm | Through Hole | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 4.4mm | 1 | 50mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | 225 | 5V | 30 | AT28C256 | 2.54mm | Not Qualified | 5V | 3-STATE | 250ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.0003A | 100000 Write/Erase Cycles | 10ms | 5V | YES | YES | 64words | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1412BV18-250BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | not_compliant | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | BOTTOM | 220 | 1.8V | NOT SPECIFIED | CY7C1412 | 165 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | 450 ps | 36Mb 2M x 18 | Volatile | 0.85mA | 1.7V~1.9V | 2MX18 | 18 | 37748736 bit | 250MHz | 0.42A | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
ATAES132-MA3H-ER-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Cut Tape (CT) | 2011 | CryptoAuthentication™ | Discontinued | 3 (168 Hours) | 8 | EAR99 | 3mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | 2mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.6mm | 8542.32.00.51 | 1 | e4 | NICKEL PALLADIUM GOLD | DUAL | 3.3V | ATAES132 | YES | 0.5mm | R-PDSO-N8 | 2.5V | Other Memory ICs | Not Qualified | 3/5V | 5.5V | 550ns | 32Kb 2K x 16 | Non-Volatile | 0.01mA | 2.5V~5.5V | 32KX1 | 1 | 32768 bit | SERIAL | 1MHz | 0.00004A | 6ms | I2C | EEPROM | I2C | 9ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA56BT-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 2 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 2mA | e3 | DUAL | 260 | 5V | 40 | 93AA56B | 8 | 1.27mm | 2/5V | 5.5V | 250 ns | 2Kb 128 x 16 | Non-Volatile | 1.8V~5.5V | 16 | 2MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V25L20PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V25 | 128Kb 8K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M28W320FCT70N6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | M28W320 | 48-TSOP | 70ns | 32Mb 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q64CVZEIG | Winbond Electronics | 3.0354 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2011 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | ROHS3 Compliant | 8 | 8-WDFN Exposed Pad | SPI, Serial | unknown | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1 | DUAL | 3V | 8 | YES | 1.27mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 64MX1 | 1 | 80MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL032P0XNFI000 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tray | 2015 | FL-P | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 6mm | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 32 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 0.55mm | 1 | 38mA | DUAL | 3V | 1.27mm | 2.7V | 3/3.3V | 3.6V | 8 ns | 32Mb 4M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 4KX16 | 16 | Synchronous | 8b | 104MHz | 0.00001A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | 256B | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C316096A-10TINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2012 | yes | Active | 3 (168 Hours) | 48 | 3.3V | 1 | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 16 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 3V | 40 | 48 | YES | 0.5mm | 2.7V | 3.6V | 3-STATE | 16Mb 2M x 8 | Volatile | 21b | 3V~3.6V | 2MX8 | 8 | 0.04A | COMMON | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29JL032J60TFI210 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | JL-J | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | TOP BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 3V | YES | 0.5mm | R-PDSO-G48 | 2.7V | Not Qualified | 3.3V | 3.6V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 0.045mA | 2.7V~3.6V | 2MX16 | 16 | 33554432 bit | 0.000005A | 60 ns | 8 | 3V | YES | YES | YES | 863 | YES | YES | FLASH | Parallel | 60ns | 8K64K | TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32800D-6B | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Obsolete | 2 (1 Year) | 90 | EAR99 | 3.3V | 1 | 13mm | Non-RoHS Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 90 | YES | 0.8mm | 3V | Not Qualified | 3.6V | 5.4ns | 256Mb 8M x 32 | Volatile | 13b | 0.35mA | 3V~3.6V | 8MX32 | 32 | 32b | 166MHz | 0.003A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AS7C31026C-12BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2008 | yes | Active | 3 (168 Hours) | 48 | 3A991.B.2.B | 8mm | Non-RoHS Compliant | 48-LFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.34mm | 8542.32.00.41 | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | BOTTOM | 260 | 3.3V | 40 | 48 | YES | 0.75mm | R-PBGA-B48 | 3V | Not Qualified | 3.6V | 1Mb 64K x 16 | Volatile | 3V~3.6V | 64KX16 | 16 | 1048576 bit | 12 ns | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V25L25PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V25 | 128Kb 8K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61DDPB251236A-400M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR IIP | 1.4mm | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | 165 | YES | 1mm | 1.71V | Not Qualified | 1.8V | 1.89V | 3-STATE | 18Mb 512K x 36 | Volatile | 0.8mA | 1.71V~1.89V | 512KX36 | 36 | 18874368 bit | 400MHz | 0.32A | 0.45 ns | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EMBA232B2PB-DV-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3559SA85BQ | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3559 | 165-CABGA (13x15) | 8.5ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B512M32D2NP-062 AIT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 200-WFBGA | Surface Mount | -40°C~95°C TC | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
N25Q256A83ESF40F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | N25Q256A83 | 256Mb 64M x 4 | Non-Volatile | 2.7V~3.6V | 108MHz | FLASH | SPI | 8ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H64M16HR-25 IT:H | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2011 | yes | Obsolete | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | MT47H64M16 | 84 | YES | 0.8mm | R-PBGA-B84 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | 1Gb 64M x 16 | Volatile | 0.26mA | 1.7V~1.9V | 64MX16 | 16 | 1073741824 bit | 400MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V639S12BFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 208 | 85°C | -40°C | 3.3V | 2 | 15mm | RoHS Compliant | Lead Free | No | 208 | Parallel | 3.45V | 3.15V | 2.3 Mb | 15mm | 1.4mm | CMOS | 1.7mm | 1 | 515mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 208 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 12 ns | 256kB | RAM, SDR, SRAM | 34b | Asynchronous | 0.015A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C04-10PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2001 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | EEPROM | AT24C04 | 8-PDIP | 900ns | 4Kb 512 x 8 | Non-Volatile | 4.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16800E-75ETL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 128 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 54 | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | 128Mb 8M x 16 | Volatile | 14b | 3V~3.6V | 8MX16 | 16 | 16b | 133MHz | 0.002A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134LA35P | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2013 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | 70°C | 0°C | 5V | 2 | 61.7mm | RoHS Compliant | Contains Lead | No | 48 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | PDIP | Parallel | 5.5V | 4.5V | 32 kb | 15.24mm | 3.8mm | CMOS | 5.08mm | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | DUAL | 245 | 5V | 48 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V |
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