Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Number of Terminals | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JS28F128J3D75B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | StrataFlash™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 28F128J3 | 56-TSOP | 75ns | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 75ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H128M16PK-25E IT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2011 | Obsolete | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 84-TFBGA | not_compliant | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | 8542.32.00.36 | MT47H128M16 | 84 | 400ps | 2Gb 128M x 16 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV0208BSA-5SI#B0 | Renesas Electronics America | 11.8460 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2011 | yes | Obsolete | 2 (1 Year) | 32 | 3V | 1 | ROHS3 Compliant | Lead Free | No | 32 | 32-TFSOP (0.465, 11.80mm Width) | 2 Mb | Surface Mount | -40°C~85°C TA | CMOS | 1 | DUAL | 3V | R1LV0208B | 32 | YES | 0.5mm | 2.7V | 3.6V | 3-STATE | 2Mb 256K x 8 | Volatile | 18b | 0.025mA | 2.7V~3.6V | 256KX8 | 8 | 55 ns | COMMON | 2V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C64N-10SC-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT24C64 | 8-SOIC | 900ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7319S166BC8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 4 (72 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V7319 | 3.6ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV0816ASB-5SI#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2009 | yes | Obsolete | 1 (Unlimited) | 3V | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 8 Mb | 1MHz | Surface Mount | -40°C~85°C TA | 35mA | R1LV0816A | 44 | 8Mb 512K x 16 | Volatile | 19b | 2.7V~3.6V | Asynchronous | 16b | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4016MC-70 | Texas Instruments | 105.5618 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 36 | 3A991.B.2.A | 5V | ROHS3 Compliant | Contains Lead | No | 36 | 36-DIP Module (0.610, 15.49mm) | 8 Mb | 70GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 8542.32.00.41 | 1 | 115mA | DUAL | 5V | BQ4016 | 36 | 2.54mm | SRAMs | 5V | 8Mb 1M x 8 | Non-Volatile | 4.75V~5.5V | 1MX8 | 8 | 8b | 0.005A | 70 ns | 8b | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256S10TFV020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | GL-S | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | 3V | YES | 0.5mm | R-PDSO-G56 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 100ns | 256Mb 16M x 16 | Non-Volatile | 0.08mA | 2.7V~3.6V | 16MX16 | 16 | 268435456 bit | 0.0002A | 3V | YES | YES | YES | 256 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C256F-15SI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~85°C TC | EEPROM | AT28C256 | 28-SOIC | 150ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "DS1245XP-70IND+") |
DS1245XP-70IND+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | Module | DS1245 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7015L35J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7015 | 72Kb 8K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7007S15J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2010 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 256 kb | 24mm | 3.63mm | 325mA | 15 ns | 32kB | RAM, SDR, SRAM | 30b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
M29W256GL70N6E | Micron Technology Inc. | 4.4356 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 20mm | ROHS3 Compliant | Gold, Tin | No | 56 | 56-TFSOP (0.724, 18.40mm Width) | 256 Mb | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | M29W256 | 56 | YES | 0.5mm | 3/3.3V | 2.7V | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | 16MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | 0.00007ms | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 70ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL512P12TFIV10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tray | 2012 | GL-P | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | Tin | No | 56 | 56-TFSOP (0.724, 18.40mm Width) | Parallel | 3.6V | 2.7V | 512 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 110mA | 56-TSOP | 120ns | 512Mb 32M x 16 | Non-Volatile | 1.65V~3.6V | Asynchronous | FLASH | Parallel | 120ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28EW256ABA1LPC-0SIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | YES | 1mm | R-PBGA-B64 | 2.7V | 3.6V | 75ns | 256Mb 32M x 8 16M x 16 | Non-Volatile | 2.7V~3.6V | 16MX16 | 16 | 268435456 bit | 8 | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT41J256M16HA-093G:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | MT41J256M16 | 20ns | 4Gb 256M x 16 | Volatile | 1.425V~1.575V | 1066MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7164L20DB | Renesas Electronics America Inc. | 209.4770 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 28-CDIP (0.600, 15.24mm) | Through Hole | -55°C~125°C TA | SRAM - Asynchronous | 28-CerDip | 20ns | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64B-15PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | AT28C64 | 150ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34MS04G204BHI013 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 1.7V | 85°C | -40°C | 1.95V | 256MX16 | 16 | 4294967296 bit | FLASH | PARALLEL | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
3138321 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NVG2S0HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | 2005 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 63 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 512MX8 | 8 | 4294967296 bit | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M93C76-WMN6TP | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 8 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 2mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | M93C76 | 8 | 1.27mm | 200 ns | 8Kb 1K x 8 512 x 16 | Non-Volatile | 2.5V~5.5V | 512X16 | 16 | 2MHz | 0.00001A | 8 | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006L25G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2008 | Active | 70°C | 0°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | Parallel | 5.5V | 4.5V | 128 kb | 29.46mm | 3.68mm | 220mA | 25 ns | 16kB | RAM, SDR, SRAM | 28b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W972GG6JB25I TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 84-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | 400ps | 2Gb 128M x 16 | Volatile | 1.7V~1.9V | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85RS256BPNF-G-JNE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tube | Discontinued | 3 (168 Hours) | 85°C | -40°C | RoHS Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI | 3.6V | Unknown | 2.7V | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 8-SOP | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | 33MHz | FRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29E512G08CEHBBJ4-3:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V3389S5BF8 | Integrated Device Technology Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree no | 3 (168 Hours) | 3A991.B.2.A | 2 | 15mm | Non-RoHS Compliant | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | not_compliant | 15mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 208 | COMMERCIAL | YES | 0.8mm | S-PBGA-B208 | 3.15V | 70°C | SRAMs | Not Qualified | 2.5/3.33.3V | 3.45V | 208 | 3-STATE | 0.36mA | 64KX18 | 18 | 1179648 bit | DUAL-PORT SRAM | PARALLEL | 100MHz | 0.015A | 5 ns | COMMON | 3.15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1250WP-100+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tube | 2004 | yes | Active | 3 (168 Hours) | 34 | 3A991.B.2.A | 3.3V | ROHS3 Compliant | Lead Free | No | 34 | 34-PowerCap™ Module | 4 Mb | 100GHz | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | 3.3V | DS1250W | 34 | YES | 3V | SRAMs | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 512KX8 | 8 | 8b | 0.00025A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7015S12J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | 68 | PLCC | Parallel | 5.5V | 4.5V | 72 kb | 24mm | 3.63mm | 325mA | 68 | 12 ns | 9kB | RAM, SDR, SRAM | 26b | Asynchronous | 9b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT62F768M64D4EJ-031 AAT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active |
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JS28F128J3D75B TR Micron Technology Inc.
StrataFlash™ Memory IC StrataFlash™ Series 28F128J3
Price: 0.0000
RFQ -
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R1LV0208BSA-5SI#B0 Renesas Electronics America
32 Pin Memory IC R1LV0208B 2 Mb kb
Price: 11.8460
RFQ -
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R1LV0816ASB-5SI#S0 Renesas Electronics America
Surface Mount 44 Pin Memory IC R1LV0816A 8 Mb kb 35mA mA 16b b
Price: 0.0000
RFQ -
BQ4016MC-70 Texas Instruments
5V V Through Hole 36 Pin Memory IC BQ4016 8 Mb kb 115mA mA 8b b
Price: 105.5618
RFQ -
S29GL256S10TFV020 Cypress Semiconductor Corp
3/3.3V V GL-S Memory IC GL-S Series 18.4mm mm
Price: 0.0000
RFQ -
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7007S15J Integrated Device Technology (IDT)
Surface Mount Memory IC 256 kb kb 24mm mm 325mA mA 8b b
Price: 0.0000
RFQ -
M29W256GL70N6E Micron Technology Inc.
3/3.3V V 56 Pin Memory IC M29W256 256 Mb kb 20mm mm 10mA mA
Price: 4.4356
RFQ -
S29GL512P12TFIV10 Cypress Semiconductor Corp
Surface Mount GL-P Memory IC GL-P Series 512 Mb kb 110mA mA
Price: 0.0000
RFQ -
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M93C76-WMN6TP STMicroelectronics
Surface Mount 8 Pin Memory IC M93C76 8 kb kb 4.9mm mm 2mA mA
Price: 0.0000
RFQ -
7006L25G Integrated Device Technology (IDT)
Through Hole Memory IC 128 kb kb 29.46mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
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70V3389S5BF8 Integrated Device Technology Inc
2.5/3.33.3V V 208 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
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7015S12J8 Integrated Device Technology (IDT)
Surface Mount 68 Pin Memory IC 72 kb kb 24mm mm 325mA mA 9b b
Price: 0.0000
RFQ -
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