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Gate Drivers ICs

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Operating Supply Voltage Length RoHS Status Lead Free Radiation Hardening Number of Pins Package / Case REACH SVHC Number of Drivers Height Width Resistance Mounting Type Operating Temperature Technology Max Supply Current Input Type Number of Functions Nominal Supply Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Supply Voltage Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount Terminal Pitch Subcategory Qualification Status Power Supplies Max Power Dissipation Output Voltage Number of Outputs Output Current Max Output Current Release Time Input Bias Current Power Dissipation Propagation Delay Turn On Delay Time Interface IC Type Built-in Protections Turn-Off Delay Time Rise Time Fall Time (Typ) Turn On Time Channel Type Voltage - Supply Output Peak Current Limit-Nom Turn Off Time High Side Driver Rise / Fall Time (Typ) Driven Configuration Gate Type Current - Peak Output (Source, Sink) Logic Voltage - VIL, VIH High Side Voltage - Max (Bootstrap)
IRS2118PBF IRS2118PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 1996 Active 1 (Unlimited) 8 EAR99 10.8966mm ROHS3 Compliant Lead Free No 8 8-DIP (0.300, 7.62mm) No SVHC 4.9276mm 7.11mm Through Hole -40°C~150°C TJ CMOS 340μA Inverting 1 340μA DUAL 15V IRS2118PBF 2.54mm MOSFET Drivers 1W 620V 1 290mA 600mA 105 ns 1W 200 ns 125 ns BUFFER OR INVERTER BASED PERIPHERAL DRIVER TRANSIENT; UNDER VOLTAGE 105 ns 130ns 65 ns 0.2 μs Single 10V~20V 75ns 35ns High-Side IGBT, N-Channel MOSFET 290mA 600mA 6V 9.5V 600V
TC4426AEPA TC4426AEPA Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2004 yes Active 1 (Unlimited) 8 EAR99 10.16mm ROHS3 Compliant Lead Free No 8 8-DIP (0.300, 7.62mm) No SVHC 2 4.06mm 6.6mm Through Hole -40°C~150°C TJ CMOS 2mA Inverting 2 4.5mA e3 Matte Tin (Sn) DUAL TC4426A 8 MOSFET Drivers 730mW 1.5A 730mW 35 ns 35 ns BUFFER OR INVERTER BASED MOSFET DRIVER 35ns 35 ns 0.045 μs Independent 4.5V~18V 1.5A 0.045 μs YES 25ns 25ns Low-Side N-Channel, P-Channel MOSFET 1.5A 1.5A 0.8V 2.4V
TC4427ACOA TC4427ACOA Microchip Technology 0.0000
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0.00000000 download 10 Weeks Surface Mount Tube 2003 yes Active 1 (Unlimited) 8 EAR99 15V 4.9mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.42mm 3.91mm 12Ohm Surface Mount 0°C~150°C TJ CMOS 2mA Non-Inverting 2 4.5mA e3 Matte Tin (Sn) DUAL GULL WING 260 40 TC4427A 8 MOSFET Drivers 470mW 18V 2 1.5A 1.5A 10μA 470mW 35 ns 35 ns BUFFER OR INVERTER BASED MOSFET DRIVER 35ns 35 ns 0.04 μs Independent 4.5V~18V 1.5A 0.04 μs YES 25ns 25ns Low-Side N-Channel, P-Channel MOSFET 1.5A 1.5A 0.8V 2.4V
LTC4441MPMSE#PBF LTC4441MPMSE#PBF Linear Technology / Analog Devices 0.0000
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0.00000000 download 8 Weeks PRODUCTION (Last Updated: 1 month ago) Tube 2011 Active 1 (Unlimited) 10 EAR99 3mm ROHS3 Compliant 10 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) Exposed Pad 1 3mm Surface Mount -55°C~125°C TJ CMOS Non-Inverting 1 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED 7.5V NOT SPECIFIED LTC4441 10 YES 0.5mm MOSFET Drivers Not Qualified 7.5V 36 ns 36 ns BUFFER OR INVERTER BASED MOSFET DRIVER 13ns 8 ns Single 5V~25V 6A NO 13ns 8ns Low-Side N-Channel MOSFET 6A 6A 1.8V 2V
HIP4082IBZ HIP4082IBZ Renesas Electronics America 0.0000
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0.00000000 download 8 Weeks Tube 1994 Active 3 (168 Hours) ROHS3 Compliant 16-SOIC (0.154, 3.90mm Width) 4 Surface Mount -55°C~150°C TJ Non-Inverting e3 Matte Tin (Sn) - annealed HIP4082 16 1.2V 1.25A FULL BRIDGE BASED MOSFET DRIVER Independent 8.5V~15V 9ns 9ns Half-Bridge N-Channel MOSFET 1.4A 1.3A 1V 2.5V 95V
MCP14E7-E/MF MCP14E7-E/MF Microchip Technology 0.0000
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0.00000000 download 8 Weeks Tube 2008 Active 1 (Unlimited) 8 EAR99 4.92mm ROHS3 Compliant Lead Free 8 8-VDFN Exposed Pad No SVHC 2 950μm 5.99mm Surface Mount -40°C~150°C TJ 1.8mA Non-Inverting 1 e3 Matte Tin (Sn) - annealed DUAL NO LEAD 260 12V 40 MCP14E7 8 YES MOSFET Drivers Not Qualified 2A HALF BRIDGE BASED MOSFET DRIVER 0.035 μs Independent 4.5V~18V 2A 0.04 μs YES 12ns 15ns Low-Side IGBT, N-Channel, P-Channel MOSFET 2A 2A 0.8V 2.4V
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