BSP299H6327XUSA1 Overview

The maximum input capacitance of this device is 400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.This device's continuous drain current (ID) is 400mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.When the device is turned off, a turn-off delay time of 55 ns occurs as the input capacitance charges before drain current conduction commences.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 500V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.Using drive voltage (10V), this device helps reduce its power consumption.

BSP299H6327XUSA1 Features

a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
a threshold voltage of 3V

BSP299H6327XUSA1 Applications

There are a lot of Infineon Technologies BSP299H6327XUSA1 applications of single MOSFETs transistors.

PFC stages, hard switching PWM stages and resonant switching
Uninterruptible Power Supply
LCD/LED TV
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
General Purpose Interfacing Switch
Consumer Appliances
Industrial Power Supplies
Lighting, Server, Telecom and UPS.
Lighting
Solar Inverter

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