BUZ30AH3045AATMA1 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1900pF @ 25V is its maximum input capacitance.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 250 ns.As far as peak drain current is concerned, its maximum pulsed current is 84A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 200V, it can support the maximum dual supply voltage.In addition to reducing power consumption, this device uses drive voltage (10V).

BUZ30AH3045AATMA1 Features

the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 21A
the turn-off delay time is 250 ns
based on its rated peak drain current 84A.

BUZ30AH3045AATMA1 Applications

There are a lot of Infineon Technologies BUZ30AH3045AATMA1 applications of single MOSFETs transistors.

Motor control
Industrial Power Supplies
Solar Inverter
LCD/LED TV
Consumer Appliances
Lighting, Server, Telecom and UPS.
Uninterruptible Power Supply
PFC stages, hard switching PWM stages and resonant switching
DC/DC converters
Lighting

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