IRF630NSTRRPBF Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 94 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 575pF @ 25V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.3A.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 27 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF630NSTRRPBF Features

the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 9.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 27 ns

IRF630NSTRRPBF Applications

There are a lot of Infineon Technologies IRF630NSTRRPBF applications of single MOSFETs transistors.

LCD/LED/ PDP TV Lighting
LCD/LED TV
Industrial Power Supplies
Micro Solar Inverter
PFC stages, hard switching PWM stages and resonant switching
Lighting
Power Tools
DC/DC converters
Load switching
Synchronous Rectification

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