FDD850N10LD Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 41 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1465pF @ 25V maximal input capacitance.This device's continuous drain current (ID) is 15.3A, which represents the maximum continuous current it can conduct.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27 ns.There is a peak drain current of 46A, its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.

FDD850N10LD Features

the avalanche energy rating (Eas) is 41 mJ
a continuous drain current (ID) of 15.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 46A.

FDD850N10LD Applications

There are a lot of ON Semiconductor FDD850N10LD applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Load switching
DC-to-DC converters
Consumer Appliances
Motor drives and Uninterruptible Power Supplies
Motor Drives and Uninterruptible Power Supples
LCD/LED TV
Power Management Functions
Micro Solar Inverter

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