
Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Published | Pbfree Code | Part Status | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Radiation Hardening | Number of Pins | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Supply Voltage-Max (Vsup) | Access Time | Memory Size | Memory Type | Address Bus Width | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Standby Current-Max | Word Size | Programming Voltage | Data Polling | Toggle Bit | Number of Sectors/Size | Page Size | Ready/Busy | Sector Size |
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TH58NVG3S0HTAI0 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 145 Weeks | 2013 | Active | 85°C | -40°C | RoHS Compliant | TFSOP | Parallel, Serial | EEPROM, NAND | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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THGBMHG9C4LBAIR | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 145 Weeks | Surface Mount | 2016 | yes | Active | 153 | 85°C | -25°C | 3.3V | RoHS Compliant | 153 | MMC | 3.6V | 1.7V | 64 Gb | 52MHz | 1mm | CMOS | 1 | BOTTOM | BALL | OTHER | 64GB | FLASH, NAND | 64GX8 | 8 | |||||||||||||||||||||||||||||||||||||||
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TC58CVG0S3HRAIG | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Active | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58NVG2S0HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2013 | Active | 67 | 85°C | -40°C | 3.3V | 8mm | RoHS Compliant | 67 | Parallel, Serial | 3.6V | 2.7V | 6.5mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 67 | INDUSTRIAL | 0.8mm | 25 ns | EEPROM, NAND | 512MX8 | 8 | |||||||||||||||||||||||||||||||||||||
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THGBMHG7C1LBAIL | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 48 Weeks | 2016 | Active | 85°C | -25°C | RoHS Compliant | MMC | 52MHz | FLASH, NAND | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58NYG0S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | Active | 67 | 85°C | -40°C | 1.8V | 8mm | RoHS Compliant | No | 67 | Parallel, Serial | 1 Gb | 6.5mm | CMOS | 1mm | 1 | BOTTOM | BALL | 1.8V | 67 | INDUSTRIAL | YES | 0.8mm | 1.7V | 1.95V | EEPROM, NAND, SLC NAND | 128MX8 | 8 | 2kB | ||||||||||||||||||||||||||||||||||||
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TC58BVG0S3HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | Surface Mount | 2012 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 3.6V | 2.7V | 9mm | CMOS | ASYNCHRONOUS | 1 | BOTTOM | BALL | 3.3V | INDUSTRIAL | 0.8mm | 120 μs | 128MB | EEPROM, NAND | 128MX8 | 1073741824 bit | 8b | 3.3V | |||||||||||||||||||||||||||||||||||
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TC58NVG1S3HTA00 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2013 | Active | 70°C | 0°C | 3.3V | RoHS Compliant | TFSOP | Parallel, Serial | 3.6V | 2.7V | EEPROM, NAND | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58BVG0S3HTAI0 | Toshiba | 1.9821 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | 2012 | Active | 48 | 85°C | -40°C | 3.3V | 18.4mm | RoHS Compliant | 48 | TFSOP | Parallel, Serial | 3.6V | 2.7V | 1 Gb | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | GULL WING | 3.3V | 48 | INDUSTRIAL | 0.5mm | EEPROM, NAND | 128MX8 | 8 | |||||||||||||||||||||||||||||||||||
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TC58NVG1S3ETAI0 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2012 | Discontinued | 48 | 3A991.B.1.A | 85°C | -40°C | 3.3V | 18.4mm | RoHS Compliant | No | 48 | TFSOP | Parallel, Serial | 3.6V | 2.7V | 2 Gb | 1mm | 12.4mm | CMOS | 8542.32.00.51 | 1 | 30mA | DUAL | GULL WING | 3.3V | 48 | INDUSTRIAL | 0.5mm | Flash Memories | 25 ns | 2GB | EEPROM, NAND, SLC NAND | 1b | 256MX8 | Synchronous | 0.00005A | 8b | NO | NO | 2K | 2.1kB | YES | 128K | |||||||||||||||||||||
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TC58BVG1S3HTA00 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | 2013 | Active | 48 | 70°C | 0°C | 3.3V | 18.4mm | RoHS Compliant | TFSOP | Parallel, Serial | 3.6V | 2.7V | 2 Gb | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | GULL WING | 3.3V | COMMERCIAL | 0.5mm | R-PDSO-G48 | EEPROM, NAND, SLC NAND | 256MX8 | 8 | 2kB | |||||||||||||||||||||||||||||||||||
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TC58NYG1S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | Active | 67 | 85°C | -40°C | 1.8V | 8mm | RoHS Compliant | No | 67 | Parallel | 2 Gb | 6.5mm | CMOS | 1mm | 1 | BOTTOM | BALL | 1.8V | 67 | INDUSTRIAL | YES | 0.8mm | 1.7V | 1.95V | EEPROM, NAND | 256MX8 | 8 | 2kB | ||||||||||||||||||||||||||||||||||||
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TC58BYG2S0HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | Active | 67 | 85°C | -40°C | 8mm | RoHS Compliant | 67 | BGA | Parallel | 6.5mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 1.8V | 67 | INDUSTRIAL | YES | 0.8mm | 1.7V | 1.95V | EEPROM, NAND | 512MX8 | 8 | 1.8V | |||||||||||||||||||||||||||||||||||||
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TC58NVG0S3HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | 2012 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 63 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 128MX8 | 8 | 1073741824 bit | 3.3V | |||||||||||||||||||||||||||||||||||
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TC58NVG2S0HTA00 | Toshiba | 2.2154 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | Active | 48 | 70°C | 0°C | 3.3V | 18.4mm | RoHS Compliant | No | 48 | TFSOP | Parallel, Serial | 4 Gb | 12mm | CMOS | 1.2mm | 1 | DUAL | GULL WING | 3.3V | 48 | COMMERCIAL | YES | 0.5mm | 2.7V | 3.6V | EEPROM, NAND, SLC NAND | 512MX8 | 8 | 4kB | |||||||||||||||||||||||||||||||||||
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TH58NVG2S3HTA00 | Toshiba | 2.4172 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | yes | Active | 70°C | 0°C | RoHS Compliant | TFSOP | Parallel, Serial | unknown | EEPROM, NAND | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TH58BVG2S3HTA00 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2014 | yes | Active | 70°C | 0°C | RoHS Compliant | TFSOP | Parallel | unknown | EEPROM, NAND | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58NVG0S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | Active | 67 | 85°C | -40°C | 8mm | RoHS Compliant | 67 | BGA | Parallel | 6.5mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 67 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 128MX8 | 8 | 1073741824 bit | 3.3V | ||||||||||||||||||||||||||||||||||
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TC58NVG1S3HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | 2013 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 63 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 256MX8 | 8 | 2147483648 bit | 3.3V | |||||||||||||||||||||||||||||||||||
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THGBMHG9C8LBAWG | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | yes | 153 | Non-RoHS Compliant | CMOS | ASYNCHRONOUS | 1 | BOTTOM | BALL | INDUSTRIAL | YES | R-PBGA-B153 | 85°C | -40°C | 64GX8 | 8 | 549755813888 bit | MEMORY CIRCUIT | |||||||||||||||||||||||||||||||||||||||||||||||
![]() |
TC58NVG1S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2013 | Active | 67 | 85°C | -40°C | 8mm | RoHS Compliant | 67 | BGA | Parallel | 6.5mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 67 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 256MX8 | 8 | 2147483648 bit | 3.3V | ||||||||||||||||||||||||||||||||||||
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TC58CVG0S3HQAIE | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Active | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58CVG2S0HQAIE | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | 2017 | Active | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TC58BYG0S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2012 | Active | 67 | 85°C | -40°C | 1.8V | 8mm | RoHS Compliant | No | 67 | Parallel, Serial | 1.95V | 1.7V | 1 Gb | 6.5mm | CMOS | 1mm | 1 | BOTTOM | BALL | 1.8V | INDUSTRIAL | 0.8mm | EEPROM, NAND, SLC NAND | 128MX8 | 8 | 2kB | |||||||||||||||||||||||||||||||||||||
![]() |
TC58BYG1S3HBAI6 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2013 | Active | 67 | 85°C | -40°C | 1.8V | 8mm | RoHS Compliant | No | 67 | Parallel, Serial | 1.95V | 1.7V | 2 Gb | 6.5mm | CMOS | 1mm | 1 | BOTTOM | BALL | 1.8V | 67 | INDUSTRIAL | 0.8mm | EEPROM, NAND, SLC NAND | 256MX8 | 8 | 2kB | ||||||||||||||||||||||||||||||||||||
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TC58BVG2S0HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | 63 | INDUSTRIAL | YES | 0.8mm | 2.7V | 3.6V | EEPROM, NAND | 512MX8 | 8 | 4294967296 bit | 3.3V | ||||||||||||||||||||||||||||||||||||
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THGBMHG8C4LBAWR | Toshiba | 4.2397 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | 2016 | yes | Active | 153 | RoHS Compliant | CMOS | ASYNCHRONOUS | 1 | BOTTOM | BALL | INDUSTRIAL | YES | R-PBGA-B153 | 85°C | -40°C | 32GX8 | 8 | 274877906944 bit | MEMORY CIRCUIT |
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TC58NVG1S3ETAI0 Toshiba
Surface Mount 48 Pin Memory IC 2 Gb kb 18.4mm mm 30mA mA 8b b
Price: 0.0000
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