Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "7026L25JI") |
7026L25JI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 256Kb 16K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C010E-20TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | EEPROM | AT28C010 | 32-TSOP | 200ns | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RMLV0416EGSB-4S2#AA1 | Renesas Electronics America | 3.7769 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tube | yes | Active | 3 (168 Hours) | 44 | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 44 | YES | R-PDSO-G44 | 2.7V | 3.6V | 4Mb 256K x 16 | Volatile | 2.7V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P74804S167BQG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 70°C | 0°C | RoHS Compliant | 165 | Parallel | 167MHz | QDR, RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V7319S200BC | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 4 Mb | 200MHz | 17mm | 1.4mm | CMOS | 1.7mm | 1 | 950mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 15 ns | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.03A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
|
IS43DR82560B-3DBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 1.8V | ROHS3 Compliant | 60 | 60-TFBGA | 2 Gb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 333MHz | 450ps | 2Gb 256M x 8 | Volatile | 15b | 1.7V~1.9V | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61QDP2B41M18A-400M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 17mm | ROHS3 Compliant | 165 | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUADP | 1.4mm | 1 | BOTTOM | 1.8V | YES | 1mm | 1.71V | Not Qualified | 1.5/1.81.8V | 1.89V | 3-STATE | 8.4ns | 18Mb 1M x 18 | Volatile | 1.15mA | 1.71V~1.89V | 1MX18 | 18 | 18874368 bit | 400MHz | 0.36A | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25LQ512B-JNLE-TR | ISSI, Integrated Silicon Solution Inc | 0.3179 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 3.9mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | 2.3V | 3.6V | 512Kb 64K x 8 | Non-Volatile | 2.3V~3.6V | 512KX1 | 1 | 104MHz | 3V | FLASH | SPI - Quad I/O | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
93LC76C/W15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 93LC76C | Die | 8Kb 1K x 8 512 x 16 | Non-Volatile | 2.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67803S166PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67803 | 3.5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC64-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.271mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | I2C, Serial | 64 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 5.334mm | 1 | 3mA | e3 | DUAL | 5V | 24LC64 | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 900ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||
|
71V2546S100BGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2011 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 260mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | OTHER | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P90FFSS70 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Tray | GL-P | Active | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | 0°C~85°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7005S25J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7005 | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NVP25672-250B1I | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Active | 3 (168 Hours) | 209 | 3A991.B.2.A | 22mm | ROHS3 Compliant | 209 | PIPELINED ARCHITECTURE | 209-BGA | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.95mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | 209 | YES | 1mm | 2.375V | Not Qualified | 2.5V | 2.625V | 3-STATE | 2.6ns | 18Mb 256K x 72 | Volatile | 0.65mA | 2.375V~2.625V | 256KX72 | 72 | 18874368 bit | 250MHz | 0.075A | COMMON | 2.38V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67803S166PFG | Renesas Electronics America Inc. | 37.2653 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67803 | 3.5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424YL10PH | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLC96400A-33WBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | AUTO REFRESH | 144-TBGA | 11mm | Surface Mount | 0°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B144 | 1.7V | 1.9V | 20ns | 576Mb 64M x 9 | Volatile | 1.7V~1.9V | 64MX9 | 9 | 603979776 bit | 300MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256F-90TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TC | AT28HC256 | 90ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P73804S200BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | PIPELINED ARCHITECTURE | Parallel | not_compliant | 200MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 1.8V | 20 | 165 | COMMERCIAL | YES | 1mm | 1.7V | SRAMs | Not Qualified | 1.5/1.81.8V | 1.9V | 3-STATE | DDR2, RAM, SRAM | 0.55mA | 1MX18 | 18 | 18874368 bit | 0.3A | 0.45 ns | COMMON | 1.7V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S150PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 2.5V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 2.625V | 2.375V | 18 Mb | 150MHz | 14mm | 1.4mm | CMOS | 1 | 215mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 2.5V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 3.8 ns | 150MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.04A | 36b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||
 |
93AA46CX-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 1 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 2mA | e3 | DUAL | 260 | 2.5V | 40 | 93AA46C | 8 | 1.27mm | 2/5V | 5.5V | 200 ns | 1Kb 128 x 8 64 x 16 | Non-Volatile | 1.8V~5.5V | 64X16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||
 |
BR24C02-RDW6TP | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | Copper, Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | BR24C02 | 8 | 0.65mm | Not Qualified | 3.5 μs | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 2KX1 | 1 | 100kHz | 3e-7A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 10ms | I2C | 1010DDDR | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
7164S20TPG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 70°C | 0°C | 5V | 1 | 34.3mm | RoHS Compliant | Lead Free | 28 | PDIP | Parallel | 5.5V | 4.5V | 64 kb | 7.62mm | 3.3mm | CMOS | 4.572mm | 1 | 100mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | NOT SPECIFIED | 28 | COMMERCIAL | 2.54mm | SRAMs | Not Qualified | 5V | 3-STATE | 20 ns | 8kB | RAM, SDR, SRAM - Asynchronous | 13b | 8KX8 | Asynchronous | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
 |
7140SA55J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 52-PLCC (19.13x19.13) | 55ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V659S12DR | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | PQFP | Parallel | 3.45V | 3.15V | 4.5 Mb | 28mm | 3.5mm | CMOS | 465mA | 4.1mm | 1 | 465mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 3.3V | 20 | 208 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | 512kB | RAM, SDR, SRAM | 34b | Asynchronous | 0.015A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
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24FC1025-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 200 YEARS DATA RETENTION | 8-DIP (0.300, 7.62mm) | I2C, Serial | No SVHC | 1 Mb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | DUAL | 2.5V | 24FC1025 | 8 | 2.54mm | 400ns | 1Mb 128K x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WP080D-JBLE-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 1.65V | 1.95V | 8Mb 1M x 8 | Non-Volatile | 1.65V~1.95V | 1MX8 | 8 | 8388608 bit | SERIAL | 133MHz | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVE4M16ALL-70BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Not For New Designs | 3 (168 Hours) | 48 | 1.8V | 1 | 8mm | ROHS3 Compliant | Lead Free | No | 48 | 48-TFBGA | 64 Mb | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | 1 | BOTTOM | 1.8V | YES | 0.75mm | Other Memory ICs | 3-STATE | 64Mb 4M x 16 | Volatile | 22b | 0.03mA | 1.7V~1.95V | 16 | 70 ns | COMMON | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3557SA80BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.25mA | 128KX36 | 36 | 4718592 bit | 95MHz | 0.04A | 8 ns | COMMON | 3.14V |
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70V7319S200BC Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 4 Mb kb 17mm mm 950mA mA 18b b
Price: 0.0000
RFQ -
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IS61QDP2B41M18A-400M3L ISSI, Integrated Silicon Solution Inc
1.5/1.81.8V V Memory IC 17mm mm
Price: 0.0000
RFQ -
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24LC64-E/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 24LC64 64 kb kb 9.271mm mm 3mA mA
Price: 0.0000
RFQ -
71V2546S100BGI8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 260mA mA 36b b
Price: 0.0000
RFQ -
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IS61NVP25672-250B1I ISSI, Integrated Silicon Solution Inc
2.5V V 209 Pin Memory IC 22mm mm
Price: 0.0000
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IDT71P73804S200BQ Integrated Device Technology (IDT)
1.5/1.81.8V V 165 Pin Memory IC 15mm mm
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Surface Mount 100 Pin Memory IC 18 Mb kb 20mm mm 215mA mA 36b b
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93AA46CX-I/SN Microchip Technology
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BR24C02-RDW6TP ROHM Semiconductor
Surface Mount 8 Pin Memory IC BR24C02 2 kb kb 4.4mm mm
Price: 0.0000
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5V V Through Hole 28 Pin Memory IC 64 kb kb 34.3mm mm 100mA mA 8b b
Price: 0.0000
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70V659S12DR Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 4.5 Mb kb 28mm mm 465mA mA 36b b
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24FC1025-I/P Microchip Technology
Through Hole 8 Pin Memory IC 24FC1025 1 Mb kb 9.4mm mm 5mA mA
Price: 0.0000
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IS66WVE4M16ALL-70BLI ISSI, Integrated Silicon Solution Inc
Memory IC 64 Mb kb 8mm mm
Price: 0.0000
RFQ -
IDT71V3557SA80BG8 Integrated Device Technology (IDT)
3.3V V 119 Pin Memory IC 22mm mm
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RFQ
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